Datasheet LS5908, LS5907, LS5906, LS5905, LS5909 Datasheet (Linear Integrated System Linear Systems)
Page 1
Linear Integrated Systems
FEATURES
LOW DRIFT |∆V
ULTRA LOW LEAKAGE I
LOW PINCHOFF V
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature -65° to +150°C
Operating Junction Temperature +150°C
G
P
/∆T|= 5µV/°C max.
GS1-2
= 150fA TYP.
= 2V TYP.
LS5905 LS5906 LS5907
LS5908 LS5909
LOW LEAKAGE LOW DRIFT
MONOLITHIC DUAL
S1 G2
N-CHANNEL JFET
G1 S2
35
Maximum Voltage and Current for Each Transistor NOTE 1
-V
GSS
-V
DSO
-I
G(f)
-I
G
Maximum Power Dissipation
Device Dissipation @ Free Air - Total 40mW @ +125°C
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS LS5906 LS5907 LS5908 LS5909 LS5905 UNITS CONDITIONS
|∆V
GS1-2
|V
GS1-2
-IGmax. Operating 1 1 1 1 3 pA
-IGmax. High Temperature 1 1 1 1 3 nA TA= +125°C
-I
GSS
-I
GSS
SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS
BV
GSS
BV
GGO
Y
fss
Y
fs
|Y
fs1-2/Yfs
I
DSS
|I
DSS1-2/IDSS
VGS(off) or V
V
GS
I
GGO
Gate Voltage to Drain or Source 40V
Drain to Source Voltage 40V
Gate Forward Current 10mA
Gate Reverse Current 10µA
/∆T| max. Drift vs. Temperature 5 10 20 40 40 µV/°CVDG= 10V, ID= 30µA
| max. Offset Voltage 5 5 10 15 15 mV VDG=10V ID= 30µA
max. At Full Conduction 2 2 2 2 5 pA VDS= 0V VGS= 20V
max. High Temperature 5 5 5 5 10 nA TA= +125°C
Breakdown Voltage 40 60 -- V VDS= 0 ID= 1nA
Gate-to-Gate Breakdown 40 -- -- V IG= 1nA ID= 0 IS= 0
TRANSCONDUCTANCE
Full Conduction 70 300 500 µmho VDG= 10V VGS= 0 f= 1kHz
Typical Operation 50 100 200 µmho VDG= 10V ID= 30µA f= 1kHz
| Mismatch -- 1 5 %
DRAIN CURRENT
Full Conduction 60 400 1000 µAVDG= 10V VGS= 0
| Mismatch at Full Conduction -- 2 5 %
GATE VOLTAGE
P
Pinchoff Voltage 0.6 2 4.5 V VDS= 10V ID= 1nA
Operating Range -- -- 4 V VDS= 10V ID= 30µA
GATE CURRENT
Gate-to-Gate Leakage -- 1 -- pA VGG=20V
D1
G1 S2
22 X 20 MILS
D2
2 6
D1 D2
1 7
S1 G2
BOTTOM VIEW
TA=-55°C to +125°C
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
Page 2
SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS
OUTPUT CONDUCTANCE
Y
OSS
Y
OS
| Differential -- 0.01 0.1 µmho
|Y
OS1-2
Full Conduction -- -- 5 µmho VDG= 10V VGS= 0
Operating -- 0.1 0.1 µmho VDG= 10V ID= 30µA
COMMON MODE REJECTION
CMR -20 log |∆V
CMR -20 log |∆V
/∆VDS|--90--dB∆V
GS1-2
/∆VDS|--90--dB∆V
GS1-2
= 10 to 20V ID= 30µA
DS
= 5 to 10V ID= 30µA
DS
NOISE
NF Figure -- -- 1 dB V
= 10V VGS= 0 RG= 10MΩ
DS
f= 100Hz NBW= 6Hz
e
n
Voltage -- 20 70 nV/√Hz VDG= 10V ID= 30µA f= 10Hz
NBW= 1Hz
CAPACITANCE
C
C
C
ISS
RSS
DD
Input -- -- 3 pF VDS= 10V VGS= 0 f= 1MHz
Reverse Transfer -- -- 1.5 pF VDS= 10V VGS= 0 f= 1MHz
Drain-to-Drain -- -- 0.1 pF VDG= 20V ID= 30µA
0.195
0.175
6 LEADS
0.019
0.016
45°
0.046
0.036
TO-71
Six Lead
DIA.
0.030
MAX.
DIA.
0.100
TO-78
(8.13)
0.320
0.230
DIA.
0.209
0.150
0.115
0.500 MIN.
0.050
3
2
4
5
1
8
6
7
0.048
0.028
0.016
0.019
DIM. A
0.016
0.021
DIM. B
45°
0.029
0.045
0.305
0.335
1
0.028
0.034
0.200
3
2
8
7
0.335
0.370
4
5
6
MAX.
0.040
MIN. 0.500
SEATING
PLANE
0.100
0.100
0.165
0.185
(10.29)
0.290
0.405
MAX.
0.188
0.197
(7.37)
S1 1
D1
SS
G1 S2
0.150
0.158
(4.78)
(5.00)
P-DIP
G2
8
2
3
SS
7
6
D2
45
SOIC
(3.81)
(4.01)
S1 1
2
D1
3
SS
45
G1
0.228
0.244
(5.79)
(6.20)
8
G2
SS
7
6
D2
S2
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
Loading...