Datasheet LS426, LS425, LS424, LS423, LS422 Datasheet (Linear Integrated System Linear Systems)

Linear Integrated Systems

FEATURES

HIGH INPUT IMPEDANCE IG=0.25pA MAX
HIGH GAIN gfs=120µmho MIN

LOW POWER OPERATION V
ABSOLUTE MAXIMUM RATINGS

NOTE 1

@ 25°C (unless otherwise noted)

Maximum Temperatures

Storage Temperature -65° to +150°C
Operating Junction Temperature +150°C

Maximum Voltage and Current for Each Transistor

-V

-V

-I

GSS
DSO

G(f)

Gate Voltage to Drain or Source 40V
Drain to Source Voltage 40V
Gate Forward Current 10mA

Maximum Power Dissipation

Device Dissipation @ Free Air - Total 400mW @ +125°C

GS(off)

=2V MAX

NOTE 1

LS421, LS422, LS423,

LS424, LS425, LS426

LOW LEAKAGE LOW DRIFT

MONOLITHIC DUAL

S1 G2

D1

G1 S2

22 X 20 MILS

N-CHANNEL JFET

G1 S2

3 5

D1 D2

2 6

D2

1 7

S1 G2

TO-78

BOTTOM VIEW

C

4

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS LS421 LS422 LS423 LS424 LS425 LS426 UNITS MAX CONDITIONS

|∆V

/∆T| max. Drift vs. Temperature 10 25 40 10 25 40 µV/°CVDG= 10V ID= 30µA

GS1-2

TA=-55°C to +125°C

|V

| max. Offset Voltage 10 15 25 10 15 25 mV VDG=10V ID= 30µA

GS1-2

GATE VOLTAGE

V

GS(off)

V

GS

Pinchoff Voltage 2.0 2.0 2.0 3.0 3.0 3.0 V VDS=10V ID= 1nA
Operating Range 1.8 1.8 1.8 2.9 2.9 2.9 V VDG=10V ID= 30µA

IGmax. Operating .25 .25 .25 .500 .500 .500 pA VDG=10V ID= 30µA

-IGmax. High Temperature 250 250 250 500 500 500 pA TA= +125°C

-I

max. At Full Conduction 1.0 1.0 1.0 3.0 3.0 3.0 pA VDS= 0V VGS= 20V

GSS

-I

max. High Temperature 1.0 1.0 1.0 3.0 3.0 3.0 nA TA= +125°C

GSS

SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS

BV
BV

GSS
GGO

Breakdown Voltage 40 60 -- V VDS= 0 IG= 1nA
Gate-to-Gate Breakdown 40 -- -- V IG= 1µAI

= 0 IS= 0

D

TRANSCONDUCTANCE

Y

fss

Y

fs

Full Conduction 300 -- 1500 µmho VDS= 10V VGS= 0 f= 1kHz
Typical Operation 120 200 350 µmho VDG= 10V ID= 30µA f= 1kHz

DRAIN CURRENT 60 -- 1000 µA LS421-3 VDS= 10V VGS= 0

I

DSS

Full Conduction 60 -- 1800 µA LS424-6

Linear Integrated Systems

4042 Clipper Ct., Fremont, CA 94538 TEL: [phone] • FAX: [phone]

SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS

OUTPUT CONDUCTANCE

Y
Y

OSS
OS

Full Conduction -- -- 10 µmho VDS= 10V VGS= 0
Operating -- 0.1 3.0 µmho VDG= 10V ID= 30µA

COMMON MODE REJECTION

CMR -20 log |∆V
CMR -20 log |∆V

/∆VDS|--90--dB∆V

GS1-2

/∆VDS|--90--dB∆V

GS1-2

= 10 to 20V ID= 30µA

DS

= 5 to 10V ID= 30µA

DS

NOISE

NF Figure -- -- 1.0 dB V

= 10V ID= 30µARG= 10MΩ

DG

f= 10Hz

e

n

Voltage -- 20 70 nV/√Hz VDG= 10V ID= 30µA f= 10Hz

10 VDG= 10V ID= 30µA f= 1kHz

CAPACITANCE

C
C

ISS
RSS

Input -- -- 3.0 pF VDS= 10V VGS= 0 f= 1MHz
Reverse Transfer -- -- 1.5 pF VDS= 10V VGS= 0 f= 1MHz

0.195

0.175

6 LEADS

0.019

0.016

45°

0.046

0.036

TO-71

Six Lead

DIA.

0.030
MAX.

DIA.

0.100

TO-78

(8.13)

0.320

0.230

DIA.

0.209

0.150

0.115

0.500 MIN.

0.050

3

2

4

5

1

8

6

7

0.048

0.028

0.016

0.019
DIM. A

0.016

0.021
DIM. B

45°

0.029

0.045

0.305

0.335

1

0.028

0.034

0.200

3

2
8

7

0.335

0.370

4

5

6

MAX.

0.040

MIN. 0.500

SEATING

PLANE

0.100

0.100

0.165

0.185

(10.29)

0.290

0.405
MAX.

0.188

0.197

(7.37)

SS
G1 S2

0.150

0.158

(4.78)
(5.00)

P-DIP

S1 1

2

D1

3
45

8
7
6

SOIC

(3.81)
(4.01)

S1 1

S1

D1

2

D1

G1

3

SS

N/C

45

G1

0.228

0.244

(5.79)
(6.20)

8

G2

N/C

SS

7

G2
D2

6

D2

S2

S2

G2
SS

D2

S1
D1
G1

N/C

N/C
G2
D2
S2

NOTES:

1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.

Linear Integrated Systems

4042 Clipper Ct., Fremont, CA 94538 TEL: [phone] • FAX: [phone]