Datasheet LS4150 Datasheet (VISHAY)

Page 1
Silicon Epitaxial Planar Diode
Features
D
D
Quadro Melf package
LS4150
Vishay Telefunken
Applications
High speed switch and general purpose use in com­puter and industrial applications
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit Repetitive peak reverse voltage V Reverse voltage V Peak forward surge current tp=1ms I Forward current I Average forward current VR=0 I Power dissipation P Junction temperature T Storage temperature range T
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient on PC board 50mmx50mmx1.6mm R
thJA
RRM
R
FSM
F
FAV
V
stg
j
96 12009
50 V 50 V
4 A 600 mA 300 mA 500 mW 175
–65...+175
500 K/W
°
C
°
C
Document Number 85562 Rev. 3, 01-Apr-99 1 (4)
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Page 2
LS4150
g
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1mA V
IF=10mA V IF=50mA V IF=100mA V IF=200mA V
Reverse current VR=50V I
VR=50V, Tj=150°C I Diode capacitance VR=0, f=1MHz, VHF=50mV C Reverse recovery time IF=IR=10...100mA, iR=0.1xIR,
R
=100
W
L
Characteristics (Tj = 25_C unless otherwise specified)
t
0.54 0.62 V
F
0.66 0.74 V
F
0.76 0.86 V
F
0.82 0.92 V
F
0.87 1.0 V
F R R
D rr
100 nA 100 nA
2.5 pF 4 ns
100
10
m
1
0.1
R
I – Reverse Current ( A )
0.01
94 9100
Figure 1. Reverse Current vs. Junction Temperature
Scattering Limit
VR=50V
0 40 80 120 160
Tj – Junction Temperature ( °C )
200
1000
100
Scattering Limit
10
1
F
I – Forward Current ( mA )
0.1 0 0.4 0.8 1.2 1.6
94 9162
Figure 2. Forward Current vs. Forward Voltage
VF – Forward Voltage ( V )
Tj=25°C
2.0
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Rev. 3, 01-Apr-992 (4)
Page 3
Dimensions in mm
LS4150
Vishay Telefunken
96 12071
Document Number 85562 Rev. 3, 01-Apr-99 3 (4)
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Page 4
LS4150
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de FaxBack +1-408-970-5600 Document Number 85562
Rev. 3, 01-Apr-994 (4)
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