Datasheet LS3958, LS3956, LS3955, LS3954A, LS3954 Datasheet (Linear Integrated System Linear Systems)
Page 1
Linear Integrated Systems
FEATURES
LOW DRIFT |∆V
LOW LEAKAGE IG = 20pA TYP.
LOW NOISE e
n
/∆T|= 5µV/°C max.
GS1-2
= 10nV/√Hz TYP.
LS3954A LS3954 LS3955
LS3956 LS3958
LOW NOISE LOW DRIFT
MONOLITHIC DUAL
N-CHANNEL JFET
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature -65° to +200°C
Operating Junction Temperature +150°C
Maximum Voltage and Current for Each Transistor
-V
GSS
-V
DSO
-I
G(f)
Maximum Power Dissipation
Device Dissipation @ Free Air - Total 400mW @ 25°C
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS LS3954A LS3954 LS3955 LS3956 LS3958 UNITS CONDITIONS
|∆V
GS1-2
|V
GS1-2
SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS
BV
GSS
BV
GGO
Y
fss
Y
fs
|Y
fs1-2/Yfs
I
DSS
|I
DSS1-2/IDSS
V
GS
V
GS
-I
G
-I
G
-I
G
-I
GSS
Gate to Drain or Source Voltage 60V
Drain to Source Voltage 60V
Gate Forward Current 50mA
/∆T| max. Drift vs. Temperature 5 10 25 50 100 µV/°CVDG= 20V, ID= 200µA
| max. Offset Voltage 5 5 10 15 25 mV VDG= 20V, ID= 200µA
Breakdown Voltage 60 -- -- V VDS= 0 ID= 1µA
Gate-to-Gate Breakdown 60 -- -- V IG= 1nA ID= 0 IS= 0
TRANSCONDUCTANCE
Full Conduction 1000 2000 3000 µmho VDG= 20V VGS= 0 f= 1kHz
Typical Operation 500 700 1000 µmho VDG= 20V ID= 200µA
| Mismatch -- 0.6 3 %
DRAIN CURRENT
Full Conduction 0.5 2 5 mA VDG= 20V VGS= 0
| Mismatch at Full Conduction -- 1 5 %
GATE VOLTAGE
(off) or V
P
Pinchoff Voltage 1 2 4.5 V VDS= 20V ID= 1nA
Operating Range 0.5 -- 4 V VDS= 20V ID= 200µA
GATE CURRENT
Operating -- 20 50 pA VDG= 20V ID= 200µA
High Temperature -- -- 50 nA VDG= 20V ID= 200µATA=+125°C
Reduced V
At Full Conduction -- -- 100 pA VDG= 20V VDS= 0
NOTE 1
DG
G1 S2
D1
NOTE 1
-- 5 -- pA VDG= 10V ID= 200µA
G1
S2
31 X 32 MILS
S1
G2
D2
35
2 6
D1 D2
1 7
S1 G2
BOTTOM VIEW
TA= -55°C to +125°C
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
Page 2
SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS
OUTPUT CONDUCTANCE
Y
OSS
Y
OS
|Y
| Differential -- 0.01 0.1 µmho
OS1-2
Full Conduction -- -- 5 µmho VDG= 20V VGS= 0
Operating -- 0.1 1 µmho VDG= 20V ID= 200µA
COMMON MODE REJECTION
CMR -20 log |∆V
CMR -20 log |∆V
/∆VDS| -- 100 -- dB ∆VDS= 10 to 20V ID= 200µA
GS1-2
/∆VDS| --75--dB∆V
GS1-2
= 5 to 10V ID= 200µA
DS
NOISE
NF Figure -- -- 0.5 dB V
= 20V VGS= 0 RG= 10MΩ
DS
f= 100Hz NBW= 6Hz
e
n
Voltage -- -- 15 nV/√Hz VDS= 20V ID= 200µA f= 10Hz
NBW= 1Hz
CAPACITANCE
C
C
C
ISS
RSS
DD
Input -- -- 6 pF VDS= 20V VGS= 0 f= 1MHz
Reverse Transfer -- -- 2 pF
Drain-to-Drain -- 0.1 -- pF VDG= 20V ID= 200µA
0.195
0.175
6 LEADS
0.019
0.016
45°
0.046
0.036
TO-71
Six Lead
DIA.
0.030
MAX.
DIA.
0.100
TO-78
(8.13)
0.320
0.230
DIA.
0.209
0.150
0.115
0.500 MIN.
0.050
3
2
4
5
1
8
6
7
0.048
0.028
0.016
0.019
DIM. A
0.016
0.021
DIM. B
45°
0.029
0.045
0.305
0.335
1
0.028
0.034
0.200
3
2
8
7
0.335
0.370
4
5
6
MAX.
0.040
MIN. 0.500
SEATING
PLANE
0.100
0.100
0.165
0.185
(10.29)
0.290
0.405
MAX.
0.188
0.197
(7.37)
S1 1
D1
SS
G1 S2
0.150
0.158
(4.78)
(5.00)
P-DIP
G2
8
2
3
SS
7
6
D2
45
SOIC
(3.81)
(4.01)
S1 1
2
D1
3
SS
45
G1
0.228
0.244
(5.79)
(6.20)
8
G2
SS
7
6
D2
S2
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
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