LS358
LOG CONFORMANCE
Linear Integrated Systems
FEATURES
LOG CONFORMANCE ∆re ≤1Ω from ideal TYP.
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
I
C
Maximum Temperatures
Storage Temperature Range -65°C to +200°C
Operating Junction Temperature +150°C
Maximum Power Dissipation ONE SIDE BOTH SIDES
Device Dissipation @ Free Air 250mW 500mW
Linear Derating Factor 2.3mW/°C 4.3mW/°C
Collector Current 10mA
MONOLITHIC DUAL
PNP
TRANSISTORS
C1 C2
B1 E1 E2 B2
26 X 29 MILS
E1 E2
35
2 6
B1 B2
1 7
C1 C2
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS LS358 UNITS CONDITIONS
∆re Log Conformance 1.5 Ω I
BV
BV
BV
BV
h
CBO
CEO
EBO
CCO
FE
Collector-Base Breakdown Voltage 20 MIN. V IC = 10µAI
Collector to Emitter Voltage 20 MIN. V IC = 10µAI
Emitter-Base Breakdown Voltage 6.2 MIN. V IE = 10µAI
Collector to Collector Voltage 45 MIN. V IC = 10µAI
DC Current Gain 100 MIN. IC = 10µAV
= 10-100-1000µAV
C
600 MAX.
h
FE
DC Current Gain 100 MIN. IC = 100µAV
600 MAX.
h
FE
VCE(SAT) Collector Saturation Voltage 0.5 MAX. V IC = 1mAI
I
CBO
I
EBO
C
OBO
C
C1C2
I
C1C2
f
T
DC Current Gain 100 MIN. IC = 1mA V
= 0.1 mA
B
Collector Cutoff Current 0.2 MAX. nA I
= 0 V
E
Emitter Cutoff Current 0.2 MAX. nA IC = 0 V
Output Capacitance 2 MAX. pF IE = 0 V
Collector to Collector Capacitance 2 MAX. pF V
Collector to Collector Leakage Current 0.5 MAX. nA V
CC
CC
= 0
= ±45V
Current Gain Bandwidth Product 200 MIN. MHz IC = 1mA V
NF Narrow Band Noise Figure 3 MAX. dB IC = 100µAVCE = 5V
BW = 200Hz RG = 10 KΩ
f=1KHz
CE
= 0
E
= 0
B
= 0 NOTE 2
C
= 0
E
= 5V
CE
= 5V
CE
= 5V
CE
= 15V
CB
= 3V
EB
= 5V
CB
= 5V
CE
= 5V
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL PARAMETER LS358 UNITS CONDITIONS
|V
BE1-VBE2
| Base Emitter Voltage Differential 0.4 TYP. mV I
= 10 µAV
C
1 MAX. mV
∆|(V
BE1-VBE2
)|/°C Base Emitter Voltage Differential 1 TYP. µV/°CIC= 10 µAV
Change with Temperature 10 MAX. µV/°CTA= -55°C to +125°C
- IB2| Base Current Differential 5 MAX. nA IC = 10µAV
|I
B1
- IB2)|/°C Base Current Differential 0.5 MAX. nA/°CIC= 10 µAV
|∆(I
B1
Change with Temperature TA= -55°C to +125°C
h
FE1/hFE2
DC Current Gain Differential 5 TYP. % IC = 10µAV
CE
CE
CE
CE
CE
= 5V
= 5V
= 5V
= 5V
= 5V
0.195
0.175
6 LEADS
0.019
0.016
45°
0.046
0.036
TO-71
Six Lead
DIA.
0.030
MAX.
DIA.
0.100
TO-78
(8.13)
0.320
0.290
0.405
(10.29)
MAX.
0.188
0.197
(7.37)
C1 1
B1
E1
N/C
N/C
0.150
0.158
(4.78)
(5.00)
0.230
DIA.
0.209
0.150
0.115
0.500 MIN.
0.050
3
2
4
5
1
8
6
7
0.048
0.028
0.016
0.019
DIM. A
0.016
0.021
DIM. B
45°
0.029
0.045
0.305
0.335
1
0.028
0.034
0.200
3
2
8
7
0.335
0.370
4
5
6
MAX.
0.040
MIN. 0.500
SEATING
0.100
0.100
0.165
0.185
PLANE
P-DIP
C2
8
2
3
45
B2
7
E2
6
N/C
SOIC
(3.81)
(4.01)
C1 1
2
B1
3
E1
N/C
45
0.228
0.244
(5.79)
(6.20)
C2
8
B2
7
6
E2
N/C
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA.
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
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