Page 1
Linear Integrated Systems
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
1 7
35
BOTTOM VIEW
2 6
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS LS350 LS351 LS352 UNITS CONDITIONS
BV
CBO
Collector to Base Voltage 25 45 60 MIN. V IC = 10µAI
E
= 0
BV
CEO
Collector to Emitter Voltage 25 45 60 MIN. V IC = 10µAI
B
= 0
BV
EBO
Emitter to Base Voltage 6.2 6.2 6.2 MIN. V IE = 10µA IC = 0 NOTE 2
BV
CCO
Collector to Collector Voltage 30 60 100 MIN. V IC = 10µAI
E
= 0
h
FE
DC Current Gain 100 150 200 MIN. IC = 10µAV
CE
= 5V
600 600 MAX.
h
FE
DC Current Gain 100 150 200 MIN. IC = 100µAVCE= 5V
600 600 MAX.
h
FE
DC Current Gain 100 150 200 MIN. IC = 1mA, VCE= 5V
VCE(SAT) Collector Saturation Voltage 0.5 0.5 0.5 MAX. V IC = 1mA IB = 0.1mA
I
CBO
Collector Cutoff Current 0.2 0.2 0.2 MAX. nA IE = 0 V
CB
= NOTE 3
I
EBO
Emitter Cutoff Current 0.2 0.2 0.2 MAX. nA IC = 0 V
EB
=3V
C
OBO
Output Capacitance 2 2 2 MAX. pF IE = 0 V
CB
= 5V
C
C1C2
Collector to Collector Capacitance 2 2 2 MAX. pF VCC = 0
I
C1C2
Collector to Collector Leakage Current 0.5 0.5 0.5 MAX. nA VCC = NOTE4
f
T
Current Gain Bandwidth Product 200 200 200 MIN. MHz IC = 1mA VCE = 5V
NF Narrow Band Noise Figure 3 3 3 MAX. dB IC = 100µAVCE = 5V
BW = 200Hz RG = 10 KΩ
f = 1KHz
B1 E1 E2 B2
C1 C2
26 X 29 MILS
E1 E2
C1 C2
B1 B2
LS350 LS351 LS352
MONOLITHIC DUAL
PNP
TRANSISTORS
FEATURES
HIGH GAIN hFE ≥ 200 @ 10µA - 1mA
TIGHT VBE MATCHING |V
BE1-VBE2
| = 0.2mV TYP.
HIGH f
T
275MHz TYP. @ 1mA
ABSOLUTE MAXIMUM RATINGS
NOTE 1
@ 25°C (unless otherwise noted)
I
C
Collector Current 10mA
Maximum Temperatures
Storage Temperature -65° to +200°C
Operating Junction Temperature +150°C
Maximum Power Dissipation ONE SIDE BOTH SIDES
Device Dissipation @ Free Air 250mW 500mW
Linear Derating Factor 2.3mW/°C 4.3mW/°C
Page 2
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
MATCHING CHARACTERISTICS
SYMBOL CHARACTERISTICS LS350 LS351 LS352 UNITS CONDITIONS
|V
BE1-VBE2
| Base Emitter Voltage Differential 1 0.4 0.2 TYP. mV I
C
= 10 µAV
CE
= 5V
5 1.0 0.5 MAX. mV
∆|(V
BE1-VBE2
)|/°C Base Emitter Voltage Differential 2 1 0.5 TYP. µV/°CIC= 10 µAVCE = 5V
Change with Temperature 20 10 2 MAX. µV/°CTA = -55°C to +125°C
|I
B1
- IB2| Base Current Differential 5 5 MAX. nA IC = 10µAV
CE
= 5V
|∆(I
B1
- IB2)|/°C Base Current Differential 0.5 0.3 MAX. nA/°CIC= 10 µA, VCE = 5V
Change with Temperature T
A
= -55°C to +125°C
h
FE1/hFE2
DC Current Gain Differential 10 5 5 TYP. % IC = 10µAV
CE
= 5V
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA.
3. For LS350: V
CB
= 20V; for LS351 & LS352: VCB= 30V.
4. For LS351: VCC= ±45V; for LS352: VCC= ±80V; for LS350: VCC= ±25V.
TO-71
Six Lead
0.230
0.209
DIA.
DIA.
0.195
0.175
0.030
MAX.
0.500 MIN.
0.150
0.115
0.019
0.016
DIA.
6 LEADS
3
2
1
8
4
5
6
0.046
0.036
45°
0.048
0.028
0.100
0.050
7
TO-78
0.335
0.370
0.305
0.335
0.016
0.019
0.165
0.185
0.040
MAX.
DIM. A
0.016
0.021
DIM. B
MIN. 0.500
0.200
0.100
0.100
0.028
0.034
45°
1
2
3
4
5
6
7
8
0.029
0.045
SEATING
PLANE
C1 1
2
3
45
6
7
8
B1
E1
N/C
N/C
C2
B2
E2
P-DIP
C1 1
2
3
45
6
7
8
B1
E1
N/C
N/C
C2
B2
E2
0.150
0.158
(3.81)
(4.01)
0.188
0.197
0.228
0.244
(5.79)
(6.20)
SOIC
N/C
0.320
0.290
(8.13)
(7.37)
0.405
MAX.
(10.29)
(4.78)
(5.00)
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