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polyfet rf devices
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.
Total
Device
Dissipation
150
TM
t
ABSOLUTE MAXIMUM RATINGS ( T =
Junction to
Case Thermal
Resistance
o
Watts V
1.00
C/W
Maximum
Junction
Temperature
LP722
SILICON GATE ENHANCEMENT MODE
RF POWER TRANSISTORLDMOS
Watts
35.0
Package Style
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
o
25 C )
Storage
Temperature
o
-65 C to 150 C200 C A V
DC Drain
Current
oo
15.0
Drain to
Gate
Voltage
50 V
Single Ended
AP
Drain to
Source
Voltage
50
Gate to
Source
Voltage
20
Gps
η
Bvdss
Idss
Igss
Vgs
Idsat
Ciss
Crss
Coss
RF CHARACTERISTICS (
PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Load Mismatch ToleranceVSWR
10
55
35.0
WATTS OUTPUT )
dB
%
20:1 Relative
0.40
Idq = A, Vds = V, F =
Idq =
0.40
A, Vds = V, F =
Idq = 0.40
A, Vds = V, F =
12.5
12.5
12.5
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward TransconductancegM Vds = 10V, Vgs = 5V
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
40
4.0
1
1 7
3.4
0.30
26.00
100.0
4.0
80.0
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
0.40Ids = mA, Vgs = 0V
Vds =
Vds = 0V Vgs = 30V
Vgs = 20V, Ids = Rdson Saturation Resistance
Vgs = 20V, Vds = 10V
Vds =
Vds =
Vds =
12.5
0.40
V, Vgs = 0V
A, Vgs = VdsIds =
12.00
Vgs = 0V, F = 1 MHz12.5
Vgs = 0V, F = 1 MHz12.5
Vgs = 0V, F = 1 MHz12.5
MHz
500
500
MHz
500
MHz
A
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION 04/30/2001
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LP722
ID IN AMPS
POUT VS PIN GRAPH
LP722 POUT VS PIN Freq=500MHz, VDS=12.5V, Idq=.4A
45
40
35
30
25
20
15
10
5
0
Efficiency = 57%
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
1dB compression = 35W
PIN IN WATTS
L1C 2 DIE IV
30
25
20
15
Pout
Gain
13.00
12.50
12.00
11.50
11.00
10.50
10.00
9.50
9.00
8.50
8.00
CAPACITANCE VS VOLTAGE
L1C 2DIE CAPACITANCE
1000
Coss
100
Ciss
10
Crss
1
0 5 10 15 20 25 30
VDS IN VOLTS
ID & GM VS VGSIV CURVE
100
10
L1C 2 DIE ID, GM vs VG
ID
10
5
0
0 2 4 6 8 10 12 14 16 18 20
vg=2v Vg=4v Vg=6v vg=8v vg=10v vg=12v
VDS IN VOLTS
Zin Zout PACKAGE DIMENSIONS IN INCHES
1
0.1
0 2 4 6 8 10 12 14
GM
Vgs in Volts
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 04/30/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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