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polyfet rf devices
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.
Total
Device
Dissipation
150
TM
t
ABSOLUTE MAXIMUM RATINGS ( T =
Junction to
Case Thermal
Resistance
o
Watts V
1.00
C/W
Maximum
Junction
Temperature
LP702
SILICON GATE ENHANCEMENT MODE
RF POWER TRANSISTORLDMOS
Watts
70.0
Package Style
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
o
25 C )
Storage
Temperature
o
-65 C to 150 C200 C A V
DC Drain
Current
oo
9.0
Drain to
Gate
Voltage
70 V
Single Ended
AP
Drain to
Source
Voltage
70
Gate to
Source
Voltage
20
Gps
η
Bvdss
Idss
Igss
Vgs
Idsat
Ciss
Crss
Coss
RF CHARACTERISTICS (
PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Load Mismatch ToleranceVSWR
12
55
70.0
WATTS OUTPUT )
dB
%
20:1 Relative
0.60
Idq = A, Vds = V, F =
Idq =
0.60
A, Vds = V, F =
Idq = 0.60
A, Vds = V, F =
28.0
28.0
28.0
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward TransconductancegM Vds = 10V, Vgs = 5V
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
65
4.0
1
1 7
3.2
0.45
20.00
120.0
3.2
60.0
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
0.40Ids = mA, Vgs = 0V
Vds =
Vds = 0V Vgs = 30V
Vgs = 20V, Ids = Rdson Saturation Resistance
Vgs = 20V, Vds = 10V
Vds =
Vds =
Vds =
28.0
0.40
V, Vgs = 0V
A, Vgs = VdsIds =
12.00
Vgs = 0V, F = 1 MHz28.0
Vgs = 0V, F = 1 MHz28.0
Vgs = 0V, F = 1 MHz28.0
MHz
500
500
MHz
500
MHz
A
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION 04/27/2001
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LP702
ID IN AMPS
POUT VS PIN GRAPH
LP702 POUT VS PIN Freq= 500MHz, VDS=28V, Idq=.4A
50
49
48
47
46
Efficiency = 60%
45
44
43
42
41
40
39
23 25 27 29 31 33 35 37 39
1dB compresion = 50W
PIN IN dBm
L1B 2 DIE IV
20
18
16
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
vg=2v Vg=4v Vg=6v vg=8v vg=10v vg=12v
VDS IN VOLTS
Pout
Gain
17.00
16.00
15.00
14.00
13.00
12.00
11.00
10.00
9.00
8.00
7.00
6.00
CAPACITANCE VS VOLTAGE
L1B 2DIE CAPACITANCE
1000
Ciss
100
Coss
10
Crss
1
0 5 10 15 20 25 30
VDS IN VOLTS
ID & GM VS VGSIV CURVE
100
10
1
0.1
0 2 4 6 8 10 12 14
L1B 2 DIE ID, GM vs VG
ID
GM
Vgs in Volts
Zin Zout PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION 04/27/2001
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