Page 1
Ordering Information
LP0701
Low Threshold
P-Channel Enhancement-Mode
Lateral MOSFET
BV
/R
DSS
BV
DGS
-16.5V 1.5Ω -1.25A -1.0V LP0701N3 LP0701LG LP0701ND
DS(ON)
(max) (min) (max)
I
D(ON)
V
GS(th)
Features
Ultra low threshold
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Freedom from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Order Number / Package
TO-92 SO-8 Die
Advanced MOS Technology
These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown. The low threshold voltage and low onresistance characteristics are ideally suited for hand held battery
operated applications.
Applications
Logic level interfaces
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Package Options (Note 1)
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 10V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
Distance of 1.6 mm from case for 10 seconds.
*
DSS
DGS
7-23
S G D
TO-92
NC D
1
2
NC D
SD
3
GD
4
SO-8
top view
Note: See Package Outline section for dimensions.
8
7
6
5
Page 2
Thermal Characteristics
LP0701
Package I
(continuous)* ID (pulsed)* Power Dissipation
D
= 25°C °C/W °C/W
@ T
C
θ
jc
θ
ja
I
DR
TO-92 -0.5A -1.25A 1W 125 170 -0.5A -1.25A
SO-8 -0.7A -1.25A 1.5W
*ID (continuous) is limited by max rated Tj.
†
Mounted on FR4 board, 25mm x 25mm x 1.57mm.
†
83 104
†
-0.7A -1.25A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
Note 1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
Note 2: All A.C. parameters sample tested.
Drain-to-Source Breakdown Voltage -16.5 V VGS = 0V, ID = -1mA
Gate Threshold Voltage -0.5 -0.7 -1.0 V VGS = VDS, ID = -1mA
Change in V
with Temperature -4.0 mV/°CVGS = VDS, ID = -1mA
GS(th)
Gate Body Leakage -100 nA VGS = ±10V, VDS = 0V
Zero Gate Voltage Drain Current -100 nA VDS = -15V, VGS = 0V
-1.0 mA V
-0.4 V
A
= 0.8 Max Rating,
DS
= 0V, TA = 125°C
V
GS
= VDS = -2V
GS
ON-State Drain Current -0.6 -1.0 VGS = VDS = -3V
-1.25 -2.3 A V
Static Drain-to-Source
ON-State Resistance
2.0 4.0 V
1.7 2.0 VGS = -3V, ID = -150mA
Ω
1.3 1.5 V
Change in R
Forward Transconductance 500 700 m VDS = -15V, ID = -1A
with temperature 0.75 %/°CVGS = -5V, ID = -300mA
DS(ON)
Ω
= VDS = -5V
GS
= -2V, ID = -50mA
GS
= -5V, ID = -300mA
GS
Input Capacitance 120 250
Common Source Output Capacitance 100 125 pF VGS = 0V, VDS = -15V, f = 1MHz
Reverse Transfer Capacitance 40 60
Turn-ON Delay Time 20
Rise Time 20 V
Turn-OFF Delay Time 30 R
ns
=-15V, ID = -1.25A,
DD
= 25Ω
GEN
Fall Time 30
Diode Forward Voltage Drop -1.2 -1.5 V VGS = 0V, ISD = -500mA
I
DRM
*
Switching Waveforms and Test Circuit
INPUT
OUTPUT
0V
-10V
0V
V
DD
10%
t
d(ON)
t
(ON)
t
r
10%
90%
90%
t
d(OFF)
t
(OFF)
90%
10%
t
F
7-24
PULSE
GENERATOR
R
gen
INPUT
D.U.T.
OUTPUT
R
L
V
DD
Page 3
Typical Performance Curves
LP0701
Output Characteristics
-2.5
VGS = -5V
-2.0
-1.5
(amperes)
-1.0
D
I
-0.5
0
0 -4 -8 -12 -16
VDS (volts) VDS (volts)
Transconductance vs. Drain Current
1.0
VDS = -15V
0.8
-4V
-3V
-2V
-1V
TA = -55°C
Saturation Characteristics
-2.5
-2.0
-1.5
(amperes)
-1.0
D
I
-0.5
0
0-1-2-3 -5-4
Power Dissipation vs. Case Temperature
2
SO-8
VGS = -5V
-4V
-3V
-2V
-1V
0.6
(siemens)
0.4
FS
G
0.2
0
0
-10
TO-92/SO-8 (pulsed)
-1.0
TO-92 (DC)
(amperes)
D
I
-0.1
TA = 25°C
TA = 125°C
-1.0
(amperes)
D
Maximum Rated Safe Operating Area
SO-8 (DC)
-2.0
(watts)
D
P
1.0
0.8
0.6
0.4
1
0
TO-92
0 15010050
(°C)I
T
C
Thermal Response Characteristics
TO-92
T
= 25°C
C
P
= 1W
D
1257525
TC = 25°C
-0.01
-0.1 -100-10-1.0
0.2
Thermal Resistance (normalized)
0
0.001 100.01 0.1 1.0
VDS (volts) t
7-25
(seconds)
P
Page 4
Typical Performance Curves
BV
Variation with Temperature
DSS
1.1
LP0701
On-Resistance vs. Drain Current
10
VGS = -2V
1.0
(normalized)
DSS
BV
0.9
-50 0 50 100 150
(°C)
j
Transfer Characteristics
-2
VDS = -15V
T
= -55°C
A
T
= 25°C
A
-1
T
= 125°C
(amperes)
D
I
A
8
6
(ohms)
4
DS(ON)
R
2
0
0
V
(th)
1.4
1.2
1.0
(normalized)
0.8
GS(th)
V
0.6
VGS = -3V
VGS = -5V
-1
(amperes)T
I
D
-2
and RDS Variation with Temperature
V
@ -1mA
(th)
R
@ -5V, -300mA
DS(ON)
-3
1.6
1.4
1.2
(normalized)
1.0
DS(ON)
R
0.8
0
0-1-2-3-4-5
VGS (volts) Tj (°C)
Capacitance vs. Drain-to-Source Voltage
200
f = 1MHz
C
100
C
C (picofarads)
C
0
0 -5 -10 -15
(volts)
V
DS
ISS
OSS
RSS
7-26
0.4
-50 0 50 100 150
Gate Drive Dynamic Characteristics
-10
VDS = -10V
-8
-6
(volts)
GS
-4
V
-2
C
= 115pF
0
012345
ISS
Q
G
-20V
238pF
(nanocoulombs)
0.6
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