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CHIPLED LY R976, LO R976, LS R976
Besondere Merkmale
● Gehäusebauform: 0805
● Industriestandard bzgl. Lötpadraster
● geringe Bauteilhöhe
● für IR-Lötung geeignet
● für Hinterleuchtungen und als opt. Indikator einsetzbar
● gegurtet (8-mm-Filmgurt)
Features
● 0805 package
● Industry standard footprint
● low profile
● suitable for IR reflow soldering process
● for use as optical indicator and backlighting
● available taped on reel (8 mm tape)
VEO06987
Typ
Type
LY R976-MO
LO R976-NO
LS R976-NO
Emissionsfarbe
Color of
Emission
yellow
orange
super-red
Farbe der
Lichtstärke
Lichtaustrittsfläche
Color of the
Light Emitting
Area
Luminous
Intensity
I
= 20 mA
F
I
(mcd)
V
colorless clear ≥ 16 (30 typ.)
≥ 25 (55 typ.)
≥ 25 (55 (typ.)
Lichtstrom
Luminous
Flux
I
= 20 mA
F
ΦV (mlm)
250 (typ.)
450 (typ.)
450 (typ.)
Bestellnummer
Ordering Code
Q62702-P5105
Q62702-P5101
Q62702-P5103
Semiconductor Group 1 1998-09-15
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Grenzwerte
Maximum Ratings
LY R976, LO R976
LS R976
Bezeichnung
Parameter
Betriebstemperatur
Operating temperature range
Lagertemperatur
Storage temperature range
Sperrschichttemperatur
Junction temperature
Durchlaßstrom
Forward current
Stoßstrom
Surge current
t ≤ 10 µs, D = 0.005
Sperrspanung
Reverse voltage
Verlustleistung, TA = 25 ˚C
Power dissipation, TA = 25 ˚C
Wärmewiderstand
Sperrschicht / Umgebung
Thermal resistance
Junction / air
Symbol
Symbol
T
op
T
stg
T
j
I
F
I
FM
V
R
P
tot
R
th JA
Werte
Values
Einheit
Unit
– 30 ... + 85 ˚C
– 40 ... + 85 ˚C
+ 95 ˚C
25 mA
0.1 A
3V
70 mW
700 K/W
Semiconductor Group 2 1998-09-15
Page 3
Kennwerte (TA = 25 ˚C)
Characteristics
LY R976, LO R976
LS R976
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
LY LO LS
Wellenlänge des emittierten Lichtes
Wavelength at peak emission
I
= 20 mA (typ.)
F
λ
peak
591 610 645 nm
Dominantwellenlänge
Dominant wavelength
I
= 20 mA (typ.) λ
F
Spektrale Bandbreite bei 50 % I
Spectral bandwidth at 50 % I
I
= 20 mA (typ.) ∆λ 15 16 16 nm
F
rel max
rel max
Abstrahlwinkel bei 50 % Iv (Vollwinkel)
Viewing angle at 50 % I
v
dom
2ϕ 160 160 160 Grad
587 605 632 nm
Durchlaßspannung
Forward voltage
I
= 20 mA (typ.)
F
I
= 20 mA (max.)
F
V
F
V
F
2.0
2.6
2.0
2.6
2.0
2.6
Sperrstrom
Reverse current (typ.)
V
= 3 V (max.)
R
Temperaturkoeffizient von λ
Temperature coefficient of λ
I
= 20 mA (typ.) TC
F
Temperaturkoeffizient von λ
Temperature coefficient of λ
I
= 20 mA (typ.) TC
F
peak
peak
dom
dom
,
,
I
R
I
R
peak
λ
dom
λ
0.01100.01100.0110µA
0.13 0.13 0.14 nm/K
0.10 0.07 0.01 nm/K
Temperaturkoeffizient von VF,
Temperature coefficient of VF,
I
= 20 mA (typ.) TC
F
F
V
– 2.5 – 1.7 – 2.0 mV/K
Einheit
Unit
deg.
V
V
µA
Semiconductor Group 3 1998-09-15
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LY R976, LO R976
LS R976
Relative spektrale Emission I
= f (λ), TA= 25 ˚C, IF= 20 mA
rel
Relative spectral emission
V(λ) = spektrale Augenempfindlichkeit
Standard eye response curve
100
%
Ι
rel
80
60
40
20
V
λ
OHL00415
yellow
orange
super-red
0
350
400 450 500 550 600 650 700
Abstrahlcharakteristik I
Radiation characteristic
50˚
60˚
70˚
80˚
90˚
rel
= f (ϕ)
nm
λ
0˚10˚20˚40˚ 30˚
ϕ
1.0
0.8
0.6
0.4
0.2
0
OHL00408
100˚
1.0 0.8 0.6 0.4
0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚
Semiconductor Group 4 1998-09-15
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LY R976, LO R976
LS R976
Durchlaßstrom IF = f (VF)
Forward current
T
= 25 ˚C
A
2
10
mA
Ι
5
F
1
10
5
0
10
5
-1
10
1.4 1.8 2.2 2.6 3.0 V 3.4
1.0
OHL00232
V
F
Relative Lichtstärke IV/I
V(20 mA)
Relative luminous intensity
T
= 25 ˚C
A
1
10
Ι
V
Ι
V (20 mA)
0
10
5
-1
10
5
-2
10
5
-3
10
10
-1
0
10
55mA
= f (IF)
super-red
yellow
orange
1
10
OHL00417
10
Ι
F
2
Maximal zulässiger Durchlaßstrom
Max. permissible forward current
I
= f (TA)
F
30
mA
I
F
25
20
15
10
5
0
0
10 20 30 40 50 60 70 80 100
OHL00420
T
A
˚C
Relative Lichtstärke IV/ I
V(25 ˚C )
Relative luminous intensity
I
= 20 mA
F
2.0
Ι
V
Ι
V (25 ˚C)
1.6
1.2
0.8
super-red
orange
yellow
0.4
0
-20 0
20 40 60 ˚C 100
= f (TA)
OHL00416
T
A
Semiconductor Group 5 1998-09-15
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Maßzeichnung (Maße in mm, wenn nicht anders angegeben)
Package Outlines (Dimensions in mm, unless otherwise specified)
±0.1
0.8
1.25
±0.1
Kathode/
Cathode
mark
±0.1
±0.1
2
±0.1
1.3
1.2
LY R976, LO R976
LS R976
±0.1
0.3
±0.1
0.29
±0.1
0.5
GEO06987
Semiconductor Group 6 1998-09-15
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