Page 1
CHIPLED LY R970, LO R970, LS R970
Besondere Merkmale
● Gehäusebauform: 0805
● Industriestandard bzgl. Lötpadraster
● geringe Bauteilhöhe
● für IR-Lötung geeignet
● für Hinterleuchtungen und als opt. Indikator einsetzbar
● gegurtet (8-mm-Filmgurt)
Features
● 0805 package
● Industry standard footprint
● low profile
● suitable for IR reflow soldering process
● for use as optical indicator and backlighting
● available taped on reel (8 mm tape)
VEO06987
Typ
Type
LY R970-JO
LO R970-JO
LS R970-JO
Emissionsfarbe
Color of
Emission
yellow
orange
super-red
Farbe der
Lichtstärke
Lichtaustrittsfläche
Color of the
Light Emitting
Area
Luminous
Intensity
I
=20mA
F
I
(mcd)
V
colorless clear ≥ 4.0(7typ.)
≥ 4.0(7typ.)
≥ 4.0(7typ.)
Lichtstrom
Luminous
Flux
I
=20mA
F
(mlm)
Φ
V
60 (typ.)
60 (typ.)
60 (typ.)
Bestellnummer
Ordering Code
Q62702-P5104
Q62702-P5100
Q62702-P5102
Semiconductor Group 1 1998-09-01
Page 2
Grenzwerte
Maximum Ratings
LY R970, LO R970, LS R970
Bezeichnung
Parameter
Betriebstemperatur
Operating temperature range
Lagertemperatur
Storage temperature range
Sperrschichttemperatur
Junction temperature
Durchlaßstrom
Forward current
Stoßstrom
Surge current
t ≤ 10 µs, D =0.005
Sperrspanung
Reverse voltage
Verlustleistung,
Power dissipation,
Wärmewiderstand
Sperrschicht / Umgebung
Thermal resistance
Junction / air
T
=25°C
A
T
=25°C
A
Symbol
Symbol
T
op
T
stg
T
j
I
F
I
FM
V
R
P
tot
R
th JA
Werte
Values
Einheit
Unit
–30...+85 °C
–40...+85 °C
+95 °C
25 mA
0.1 A
5V
75 mW
610 K/W
Semiconductor Group 2 1998-09-01
Page 3
Kennwerte (TA=25°C)
Characteristics
LY R970, LO R970, LS R970
Bezeichnung
Parameter
Wellenlänge des emittierten Lichtes (typ.)
Wavelength at peak emission (typ.)
I
=20mA
F
Dominantwellenlänge (typ.)
Dominant wavelength (typ.)
I
=20mA
F
Spektrale Bandbreite bei 50 %
Spectral bandwidth at 50 %
I
=20mA
F
Abstrahlwinkel bei 50 %
Viewing angle at 50 %
I
I
v
I
rel max
I
rel max
(Vollwinkel)
v
(typ.)
(typ.)
Durchlaßspannung (typ.)
Forward voltage (max.)
I
=20mA
F
Sperrstrom (typ.)
Reverse current (max.)
V
=5V
R
Temperaturkoeffizient von
λ
peak
(IF=20mA) (typ.)
Temperature coefficient of
λ
peak
(IF=20mA) (typ.)
Symbol
Symbol
Werte
Values
Einheit
Unit
LY LO LS
λ
peak
λ
dom
∆
λ 45 40 45 nm
586 610 635 nm
590 605 628 nm
2ϕ 160 160 160 Grad
deg.
V
V
I
R
I
R
TC
F
F
peak
λ
2.3
2.9
0.01
10
2.3
2.9
0.01
10
2.3
2.9
0.01
10
V
V
µA
µA
0.1 0.1 0.1 nm/K
Temperaturkoeffizientvon
Temperature c oefficient of
Temperaturkoeffizient von
Temperature coefficient of
λ
λ
V
V
=20mA(typ.)
dom,IF
=20mA(typ.)
dom,IF
=20mA(typ.)
F,IF
=20mA(typ.)
F,IF
TC
TC
λ
V
dom
F
0.08 0.08 0.08 nm/K
– 1.9 – 1.9 – 1.9 mV/K
Semiconductor Group 3 1998-09-01
Page 4
LY R970, LO R970, LS R970
Relative spektrale Emission I
= f(λ), TA=25°C,IF=20mA
rel
Relative spectral emission
V(λ) = spektrale Augenempfindlichkeit
Standard eye response curve
100
%
Ι
rel
80
V
60
40
20
OHL00411
λ
orange
yellow
super-red
0
400 450 500 550 600 650 700
Abstrahlcharakteristik
Radiation characteristic
50˚
60˚
70˚
80˚
I
rel
= f (ϕ)
nm
λ
0˚10˚20˚40˚ 30˚
ϕ
1.0
0.8
0.6
0.4
0.2
OHL00408
90˚
100˚
1.0 0.8 0.6 0.4
0
0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚
Semiconductor Group 4 1998-09-01
Page 5
LY R970, LO R970, LS R970
Durchlaßstrom IF= f(VF)
Forward current
T
=25°C
A
2
10
Ι
F
mA
1
10
5
0
10
5
super-red
orange/yellow
-1
10
1.0 1.4 1.8 2.2 2.6 3.0 3.4
OHL00412
V
Relative Lichtstärke
I
V/IV(20 mA)
Relative luminous intensity
1
10
Ι
V
Ι
V
(20 mA)
0
10
5
-1
10
5
-2
10
yellow
super-red
orange
10 10
55
10
5
-3
10
-1 0
= f(IF)
T
=25°C
A
OHL00414
12
mA
10
Maximal zulässiger Durchlaßstrom
Max. permissible forward current
I
= f (TA)
F
30
mA
I
F
25
20
15
10
5
V
F
OHL00418
Relative Lichtstärke
I
/ I
V
V(25 °C )
Relative luminous intensity
I
=20mA
F
2.0
Ι
V
Ι
V (25 ˚C)
1.6
1.2
0.8
0.4
orange
super-red
= f (TA)
yellow
Ι
F
OHL00413
0
10 20 30 40 50 60 70 80 100
0
˚C
T
A
0.0
0 20 40 60 80 100
T
˚C
A
Semiconductor Group 5 1998-09-01
Page 6
LY R970, LO R970, LS R970
Maßzeichnung (Maße in mm, wenn nicht anders angegeben)
Package Outlines (Dimensions in mm, unless otherwise specified)
±0.1
0.8
1.25
±0.1
Kathode/
Cathode
mark
±0.1
±0.1
2
±0.1
1.3
1.2
0.3
±0.1
±0.1
0.29
±0.1
0.5
GEO06987
Semiconductor Group 6 1998-09-01
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