Datasheet LND822, LND820, LND823, LND821 Datasheet (Linear Dimensions)

DATA SHEET

LND820/821/822/823

POWER MOSFET

GENERAL DESCRIPTION

The LND820 series provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance
and cost-effectiveness.
The TO-220 package is universally preferred
for all commercial-industrial applications at
power dissipation levels to approximately 50
watts. The low thermal resistance and low
package cost of the TO-220 contribute to its
wide acceptance throughout the industry.

FEATURES

• V

• Dynamic dv/dt Rating

• Repetitive Avalanche rated

• Fast Switching

=450V-500V

DSS

R

I

D

= 3.0 ΩΩΩΩ-4.0 ΩΩΩΩ

DS (on)

=2.2A and 2.5A

• Ease of Paralleling

• Simple Drive Requirement

SYMBOL PIN DIAGRAM

TO-220

• Linear Dimensions, Inc. • 445 East Ohio Street, Chicago IL 60611 USA • tel [phone] • fax [phone] •

www.lineardimensions.com

•

LND820/821/822/823

ABSOLUTE MAXIMUM RATING

Symbol Parameter Max Units

ID@Tc=25ºC Continuous Drain Current,VGS @ 10V 2.5

ID@Tc=100ºC Continuous Drain Current, VGS @ 10V 1.6

I

DM

Pulsed Drain Current(1) 8.0

PD @Tc=25ºC Power Dissipation 50 W

ID@Tc=25ºC Linear Derating Factor 0.40 W/ºC

V

GS

E

AS

I

AR

E

AR

Gate-to-Source Voltage ±20 V

Single Pulse Avalanche Energy(2) 210 mJ

Avalanche Current (1) 2.5 A

Repetitive Avalanche Energy (1) 5.0 mJ

dv/dt Peak Diode Recovery dv/dt(3) 3.5 V/ns

T

J

T

STG

Operating Junction and Storage
temperature Range

Soldering Temperature, for 10
seconds

-55 to +150

300

(1.6mm from case)

A

ºC

THERMAL RESISTANCE

Symbol Parameter Min Typ Max Units

Ro

Ro

Ro

JC

CS

JA

Junction-to-case - - 2.5

Case-to-Sink, Flat,
Greased Surface

-0.50 -

Junction-to-Ambint - - 62

ºC/W

• Linear Dimensions, Inc. • 445 East Ohio Street, Chicago IL 60611 USA • tel [phone] • fax [phone] •

www.lineardimensions.com

•

LND820/821/822/823

ELECTRICAL CHARACTERISTICS

(TC=25°C unless otherwise specified)

Symbol Parameter Conditions Min Typ Max Units

V

(BR)DSS

∆V
/ ∆T

I

D(on)

R

DS(ON)

(BR)DSS

J

Drain-to-source
Breakdown Voltage

Breakdown Voltage Temp.
Coefficient

On-State Drain
Current(Note 2)

Static Drain-to-Source On­Resistace

LND-820/822 500
LND821/823

LND820/821 2.5
LND821/823
LND820/821 3.0
LND822/823

V

=0V,

GS

I

250µA

D =

Reference to 25ºC
I

1mA

D=

V
R

V

> I

GS

DS(on)

=0V,I

GS

x

D(on)

Max, VGS=10V

1.5A(4)

D =

450

--V

-0.59- V/ºC

2.2

--A

4.0

Ω

V

g

I

DSS

GS(th)

fs

Gate Threshold Voltage VDS=V

Forward
Transconductance

Drain-to-source Leakage
Current (T

=125ºC)

C

Gate-to-Source Forward

I

GSS

Leakage
Gate-to-Source Reverse

Leakage

Q

g

Total Gate Charge

Qqs Gate-to-Source Charge

Gate-to-drain(“Miller”)
Charge

t

d(on)

t

r

Turn-on Delay Time V

Rise time ID=2.1A - 8.6
td(off) Turn-off Delay time

t

f

L

D

L

S

C

iss

C

oss

C

rss

Fall time

Internal Drain Inductance - 4.5

Input Source Inductance

Input Capacitance - 360

Output Capacitance - 92

Reverse Transfer

Capacitance

=250µA 2.0 - 4.0 V

GS, ID

V

=50V,ID =1.5A(4) 1.5 - - S

DS

V

500V,V

DS=

V

400V,V

DS=

V

=-20V - - 100

GS

V

=-20V - - -100

GS

=2.1A

I

D

400V

V

DS=

V

=10V (4)

GS

250V 8.0

DD =

R

=18Ω

G

R

=100Ω (4)

D

=0V - 25

GS

0V - 250

GS =

-

-

-

-

-

-

-33

-16

24

3.3
13

Between lead 6mm
(0.25 in.)

From package and
center of die contact

=0V

V

GS

=25V

V

DS

F=1.0 MHz

-7.5

-37

µA

µA

nA

nC

ns

nH

pF

• Linear Dimensions, Inc. • 445 East Ohio Street, Chicago IL 60611 USA • tel [phone] • fax [phone] •

www.lineardimensions.com

•

LND820/821/822/823

SOURCE-DRAIN RATING AND CHARACTERISTICS

Symbol Parameter Conditions Min Typ Max Units

I

S

I

SM

V

SD

t

rr

Q

rr

t

ON

Continuous Source
Current
Pulsed Source Current
(Body Diode) (1)

Diode Forward Voltage

Reverse Recovery Time

MOSFET symbol showing
the integral reverse p-n
junction diode

T

=25°C, IS=2.5A,

J

V

0V(4)

GS=

=25°C, IF=2.1A,

T

J

di/dt=100A/µs (4)

Reverse Recovery Charge - 0.70 1.4

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by

Notes : 1 : Repetitvie rating :pulse width limited by max. junction temperature
2 : V
3 : I

50V, starting T

DD=

2.5A, di/dt≤50 A/µs, V

SD

≤

25°C,L=60mH RG=25Ω, I

J =

DD

≤ V

(BR)DSS

,T

AS =

≤150°C

J

2.5A

4 : Pulse width≤ 300µs; duty cycle≤ 2%

--2.5

--8.0

--1.6V

- - 520 nS

L

S+LD)

A

µC

• Linear Dimensions, Inc. • 445 East Ohio Street, Chicago IL 60611 USA • tel [phone] • fax [phone] •

www.lineardimensions.com

•