Datasheet LND250K1 Datasheet (Supertex)

Page 1
N-Channel Depletion-Mode MOSFET
Ordering Information
BV
/R
DSX
BV
DGX
500V 1.0K 1.0mA LND250K1
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
DS(ON)
(max) (min) TO-236AB*
I
DSS
Order Number / Package
LND250
Product marking for SOT-23:
NDE
where = 2-week alpha date code
Features
ESD gate protection
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source-drain diode
High input impedance and low C
Applications
Solid state relays
Normally-on switches
Converters
Power supply circuits
Constant current sources
Input protection circuits
Advanced DMOS Technology
The LND2 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, volt­age ramp generation and amplification.
ISS
Package Options
Source
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ±20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
Distance of 1.6 mm from case for 10 seconds.
*
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DSX
DGX
Gate Drain
TO-236AB
(SOT-23)
top view
Note: See Package Outline section for dimensions.
1
Page 2
Thermal Characteristics
Package ID (continuous)* ID (pulsed) Power Dissipation
@TA = 25°C °C/W °C/W
θθ
θ
θθ
jc
TO-236AB 13mA 30mA 0.36W 200 350 13mA 30mA
* ID (continuous) is limited by max rated Tf.
θθ
θ
θθ
ja
I
DR
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
DSX
V
GS(OFF)
V
GS(OFF)
I
GSS
I
D(OFF)
I
DSS
R
DS(ON)
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
tr Rise Time 0.45
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Drain-to-Source Breakdown Voltage 500 V VGS = -10V, ID = 1.0mA
Gate-to-Source OFF Voltage -1.0 -3.0 V VDS = 25V, ID = 100nA
Change in V
with Temperature 5.0 mV/°CVDS = 25V, ID = 100nA
GS(OFF)
Gate Body Leakage Current 100 nA VGS = ±20V, VDS = 0V
Drain-to-Source Leakage Current 100 nA VGS = -10V, VDS = 450V
100 µAVGS = -10V, VDS = 0.8V max rating
TA =125°C
Saturated Drain-to-Source Current 1.0 3.0 mA VGS = 0V, VDS = 25V
Static Drain-to-Source ON-State Resistance 850 1K VGS = 0V, ID = 0.5mA
Change in R
Forward Transconductance 1.0 2.0 m VGS = 0V, ID = 1.0mA
with Temperature 1.2 %/°CVGS = 0V, ID = 0.5mA
DS(ON)
Input Capacitance 7.5 10 VGS = -10V, VDS = 25V
Output Capacitance 2.0 3.5 pF
f = 1MHz
Reverse Transfer Capacitance 0.5 1.0
Turn-ON Delay Time 0.09 VDD = 25V, ID = 1.0mA,
R
= 25
GEN
Turn-OFF Delay Time 0.1
µs
Fall Time 1.3
Diode Forward Voltage Drop 0.9 V VGS = -10V, ISD = 1.0mA
Reverse Recovery Time 200 ns VGS = -10V, ISD = 1.0mA
LND250
I
*
DRM
Switching Waveforms and Test Circuit
0V
INPUT
10%
-10V
V
DD
OUTPUT
0V
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
t
d(ON)
t
(ON)
10%
90%
t
r
90%
t
d(OFF)
t
(OFF)
t
F
90%
10%
2
PULSE
GENERATOR
R
gen
INPUT
1235 Bordeaux Drive, Sunnyvale, CA 94089
V
DD
R
L
OUTPUT
D.U.T.
12/13/010
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
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