Page 1
N-Channel Depletion-Mode
MOSFET
Ordering Information
BV
/R
DSX
BV
DGX
500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND
* Same as SOT-89. Product shipped on 2000 piece carrier tape reels.
DS(ON)
(max) (min) TO-92 TO-243AA* Die
I
DSS
Order Number / Package
LND150
Product marking for TO-243AA:
LN1E❋
Where ❋ = 2-week alpha date code
Features
❏ ESD gate protection
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Excellent thermal stability
❏ Integral source-drain diode
❏ High input impedance and low C
ISS
Applications
❏ Solid state relays
❏ Normally-on switches
❏ Converters
❏ Power supply circuits
❏ Constant current sources
❏ Input protection circuits
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ±20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
DSX
DGX
Advanced DMOS Technology
The LND1 is a high voltage N-channel depletion mode (normallyon) transistor utilizing Supertex’s lateral DMOS technology. The
gate is ESD protected.
The LND1 is ideal for high voltage applications in the areas of
normally-on switches, precision constant current sources, voltage ramp generation and amplification.
Package Options
G
S
D
TO-243AA
(SOT-89)
Note: See Package Outline section for dimensions.
S
S G D
TO-92
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
Page 2
Thermal Characteristics
Package ID (continuous)* ID (pulsed) Power Dissipation
@TA = 25°C °C/W °C/W
θθ
θ
θθ
jc
TO-92 30mA 30mA 0.74W 125 170 30mA 30mA
TO-243AA 30mA 30mA 1.6W
* ID (continuous) is limited by max rated Tf.
† Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Significant P
increase possible on ceramic substrate.
D
†
31 105
θθ
θ
θθ
ja
†
I
DR
30mA 30mA
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
DSX
GS(OFF)
DS(ON)
Drain-to-Source Breakdown Voltage 500 V VGS = -10V, ID = 1.0mA
Gate-to-Source OFF Voltage -1.0 -3.0 V VDS = 25V, ID = 100nA
Change in V
with Temperature 5.0 mV/°CVDS = 25V, ID = 100nA
GS(OFF)
Gate Body Leakage Current 100 nA VGS = ±20V, VDS = 0V
Drain-to-Source Leakage Current 100 nA VGS = -10V, VDS = 450V
100 µAVGS = -10V, VDS = 0.8V max rating
TA =125°C
Saturated Drain-to-Source Current 1.0 3.0 mA VGS = 0V, VDS = 25V
Static Drain-to-Source ON-State Resistance 850 1000 Ω VGS = 0V, ID = 0.5mA
Change in RDS(ON) with Temperature 1.2 %/°CVGS = 0V, ID = 0.5mA
Forward Transconductance 1.0 2.0 m VGS = 0V, ID = 1.0mA
Ω
Input Capacitance 7.5 10
V
= -10V, VDS = 25V
Output Capacitance 2.0 3.5 pF
GS
f = 1 MHz
Reverse Transfer Capacitance 0.5 1.0
Turn-ON Delay Time 0.09
= 25V, ID = 1.0mA,
V
Turn-OFF Delay Time 0.1
µs
DD
R
= 25Ω
GEN
Fall Time 1.3
Diode Forward Voltage Drop 0.9 V VGS = -10V, ISD = 1.0mA
Reverse Recovery Time 200 ns VGS = -10V, ISD = 1.0mA
BV
V
GS(OFF)
∆V
I
GSS
I
D(OFF)
I
DSS
R
DS(ON)
∆R
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
tr Rise Time 0.45
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
LND150
I
*
DRM
Switching Waveforms and Test Circuit
INPUT
OUTPUT
0V
-10V
V
0V
10%
t
(ON)
t
d(ON)
DD
10%
90%
t
r
90%
t
d(OFF)
t
(OFF)
t
F
90%
10%
2
PULSE
GENERATOR
R
gen
INPUT
V
DD
R
L
OUTPUT
D.U.T.
Page 3
Typical Performance Curves
LND150
Output Characteristics
6
5
4
3
(milliamps)
D
I
2
1
0
0 250 500
V
(volts) V
DS
Transconductance vs. Drain Current
10
V
= 400V
DS
8
VGS =1.0V
0.5V
0V
-0.5V
-1.0V
T
= -55°C
A
Saturation Characteristics
6
V
GS
5
4
3
(milliamps)
D
I
2
1
0
0123 54
(volts)
DS
Power Dissipation vs. Ambient Temperature
2
TO-243AA
= 1.0V
0.5V
0V
-0.5V
-1.0V
6
(millisiemens)
4
FS
G
2
0
0
Maximum Rated Safe Operating Area
100
TO-243AA (DC)
10
T
(milliamps)
D
I
1
246
(milliamps)
I
D
TO-92 (DC)
= 25°C
A
TO-92 (pulsed)
T
A
T
= 125°C
A
= 25°C
8
1
(watts)
D
P
10
TO-92
0
0 15010050
1257525
(°C)
T
A
Thermal Response Characteristics
1.0
0.8
TO-243AA
0.6
0.4
TA = 25°C
P
= 1.6W
D
0.1
1 100010010
0.2
Thermal Resistance (normalized)
0
0.001 100.01 0.1 1.0
V
DS
(volts)
(seconds)
t
P
TO-92
PD = 1W
T
= 25°C
C
3
Page 4
Typical Performance Curves
BV
Variation with Temperature
DSS
VGS = -5V
1.1
1.0
(normalized)
DSS
BV
1.4
1.2
125°C
1.0
0.8
0.6
(milliamps)
D
I
0.4
ID
25°C
vs. R
SOURCE
I
D
↓
LND1
R
SOURCE
LND150
0.9
-50 0 50 100 150
Tj (°C)
Transfer Characteristics
10
VDS = 400V
T
= -55°C
A
5
(milliamps)
D
I
0
-1 0 1 23
V
(volts)
GS
Capacitance vs. Drain-to-Source Voltage
10
VGS = -10V
T
= 25°C
A
T
= 125°C
A
0.2
0.0
100 1K 10K
1.8
1.6
1.4
V
GS(OFF)
R
and R
(ohms)
SOURCE
Variation with Temperature
DS
R
@
DS(ON)
ID = 1mA
(normalized)
1.2
GS(OFF)
V
1.0
0.8
-50 0 50 100 150
V
GS(OFF)
Tj (°C)
Gate Drive Dynamic Characteristics
10
@ 100nA
100K10
2.0
1.6
1.2
(normalized)
DS(ON)
0.8
R
0.4
C
ISS
5
C (picofarads)
C
OSS
C
RSS
0
010203040
V
(volts)
DS
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
8.7pF
5
V
DS
= 20V
60V40V
(volts)
GS
V
0
-5
0 0.1 0.2 0.3
Q
(nanocoulombs)
C
12/13/010
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
4
www.supertex.com
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