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Infrared Light Emitting Diodes
LNA2W01L
GaAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency : PO = 4.5 mW (typ.)
Emitted light spectrum suited for silicon photodetectors
Infrared light emission close to monochromatic light :
λP = 950 nm (typ.)
Narrow directivity : θ = 18 deg. (typ.)
Ultra-miniature double ended package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Power dissipation P
Forward current (DC) I
Pulse forward current I
Reverse voltage (DC) V
Operating ambient temperature
Storage temperature T
*
f = 100 Hz, Duty cycle = 0.1 %
D
F
*
FP
R
T
opr
stg
75 mW
50 mA
1A
3V
–25 to +85 ˚C
–30 to +100 ˚C
Unit : mm
Type number : Cathode mark (Red)
10.0 min.
3.2±0.3
ø1.8
0.5±0.1
12
45˚
1.05±0.10.85 ± 0.15
(0.7)
2.8±0.2
1.8
2.8±0.2
3.2±0.3
R0.9
1.8
10.0 min.
2.2±0.15
(0.7)
0.15
1: Cathode
2: Anode
0.4±0.1
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Radiant power P
Peak emission wavelength λ
Spectral half band width ∆λ IF = 50mA 50 nm
Forward voltage (DC) V
Reverse current (DC) I
Capacitance between pins
C
Half-power angle θ
IF = 50mA 3 4.5 mW
O
IF = 50mA 950 nm
P
IF = 50mA 1.25 1.5 V
F
VR = 3V 10 µA
R
VR = 0V, f = 1MHz 35 pF
t
The angle in which radiant intencity is 50%
18 deg.
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LNA2W01L Infrared Light Emitting Diodes
I
— Ta
60
50
(mA)
F
40
30
20
10
Allowable forward current I
0
– 25
F
0 20406080100
Ambient temperature Ta (˚C )
I
— V
4
10
3
10
(mA)
FP
2
10
10
1
Pulse forward current I
FP
tw = 10µs
Duty Cycle = 0.1%
Ta = 25˚C
I
— Duty cycle
FP
2
10
10
(A)
FP
1
–1
10
–2
Pulse forward current I
10
–3
10
10
–1
–2
10
Ta = 25˚C
10 10
1
(mA)
F
Forward current I
2
80
70
60
50
40
30
20
10
0
0 0.4 0.8 1.2 1.6
Duty cycle (%)
∆P
— I
F
120
100
O
80
60
40
Relative radiant power ∆P
20
O
F
Ta = 25˚C
3
10
O
2
10
10
1
Relative radiant power ∆P
I
— V
F
F
Ta = 25˚C
Forward voltage VF (V)
∆P
— I
O
FP
tw = 10µs
(1) f = 100Hz
(2) f = 21kHz
(3) f = 42kHz
(4) f = 60kHz
Ta = 25˚C
(2)
(3)(4)
(1)
–1
10
0
13524
Forward voltage VF (V)
V
— Ta
1.6
1.2
(V)
F
0.8
Forward voltage V
0.4
0
– 40 0 40 80 120
F
Ambient temperature Ta (˚C )
2
IF = 50mA
10mA
1mA
0
10 20 30 40 50 60
0
Forward current IF (mA)
∆P
— Ta
3
10
O
2
10
10
O
IF = 50mA
Relative radiant power ∆P
1
– 40 0 40 80 120
Ambient temperature Ta (˚C )
–1
10
10
2
10
3
10
Pulse forward current IFP (mA)
λ
— Ta
1000
980
(nm)
P
960
940
920
P
IF = 50mA
Peak emission wavelength λ
900
– 40 0 40 80 120
Ambient temperature Ta (˚C )
4
10
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Infrared Light Emitting Diodes LNA2W01L
Spectral characteristics
100
80
60
40
Relative radiant intensity (%)
20
0
900 940 980 1020 1060 1100
860
Wavelength λ (nm)
I
= 50mA
F
Ta = 25˚C
Directivity characteristics
0˚ 10˚ 20˚
100
90
80
70
60
50
40
30
Relative radiant intensity(%)
20
30˚
40˚
50˚
60˚
Modulation output
70˚
10
80˚
90˚
10
Frequency characteristics
2
10
10
1
–1
–2
1
10
Frequency f (kHz)
10
Ta = 25˚C
2
3
10
3
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