Datasheet LMV751M5, LMV751MWC Datasheet (NSC)

Page 1
LMV751 Low Noise, Low Vos, Single Op Amp
General Description
The LMV751 is a high performance CMOS operational am­plifier intended for applications requiring low noise and low input offset voltage.It offers modestbandwidth of 4.5MHz for very low supply current and is unity gain stable.
The output stage is able to drive high capacitance, up to 1000pF and source or sink 8mA output current.
It is supplied in the space saving SOT23-5 Tiny package. The LMV751 is designed to meet the demands of small size,
low power, and high performance required by cellular phones and similar battery operated portable electronics.
Features
n Low Noise 6.5nV Rt-Hz typ. n Low Vos (0.05mV typ.) n Wideband 4.5MHz GBP typ. n Low Supply Current 500uA typ. n Low Suppy Voltage 2.7V to 5.0V n Ground-referenced Inputs n Unity gain stable n Small Package
Applications
n Cellular Phones n Portable Equipment n Radio Systems
Connection Diagrams
Ordering Information
Package Ordering Info NSC Drawing Pkg Marking Supplied As
5-Pin SOT23-5 LMV751M5 MA05B A32A 1k Units Tape and Reel
LMV751M5X MA05B A32A 3k units Tape and Reel
SOT23-5
DS101081-1
Top View
August 1999
LMV751 Low Noise, Low Vos, Single Op Amp
© 1999 National Semiconductor Corporation DS101081 www.national.com
Page 2
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National SemiconductorSales Office/ Distributors for availability and specifications.
ESD tolerance (Note 3)
Human Body Model 2000V Machine Model 200V
Differential Input Voltage
±
Supply Voltage
Supply Voltage (V
+-V−
) 5.5V
Lead Temperature (Soldering, 10 sec) 260˚C
Storage Temperature Range −65˚C to 150˚C Junction Temperature (T
J
) (Note 4) 150˚C
Recommended Operating Conditions
Supply Voltage 2.7V to 5.0V Temperature Range −40˚C T
J
85˚C
Thermal resisance (θ
JA
) (Note 6)
M5 Package, SOT23-5 274˚C/W
2.7V Electrical Characteristics
V+= 2.7V, V−= 0V, VCM= 1.35V, TA= 25˚C unless otherwise stated. Boldface limits apply over theTemperature Range.
Symbol Parameter Condition
Typ
(Note 5)
Limit
(Note 2)
Units
V
OS
Input Offset Voltage 0.05 1.0
1.5
mV
max
CMRR Common Mode Rejection Ratio 0V
<
V
CM
<
1.3V 100 85
70
dB
min
PSRR Power Supply Rejection Ratio V
+
=
2.7V to 5.0V 107 85
70
dB
min
I
S
Supply Current 0.5 0.7
0.75
mA
max
I
IN
Input Current 1.5 100 pA
max
I
OS
Input Offset Current 0.2 pA
A
VOL
Voltage Gain R
L
=
10k Connect to V
+
/2
V
O
=
0.2V to 2.2V
120 110
95
dB
min
R
L
=
2k Connect to V
+
/2
V
O
=
0.2V to 2.2V
120 100
85
V
O
Positive Voltage Swing R
L
=
10k Connect to V
+
/2 2.62 2.54
2.52
V
min
R
L
=
2k Connect to V
+
/2 2.62 2.54
2.52
V
O
NegativeVoltage Swing R
L
=
10k Connect to V
+
/2 78 140
160
mV
max
R
L
=
2k Connect to V
+
/2 78 140
160
I
O
Output Current Sourcing, V
O
=
0V
V
IN
(diff)
=
±
0.5V
12 6.0
1.5
mA min
Sinking,V
O
=
2.7V
V
IN
(diff)
=
±
0.5V
11 6.0
1.5
e
n
(10Hz)
Input Referred Voltage Noise 15.5 nV/
e
n
(1kHz)
Input Referred Voltage Noise 7 nV/
e
n
(30kHz)
Input Referred Voltage Noise 7 10 nV/
max
I
N
(1kHz) Input Referred Current Noise 0.01 pA/
GBW Gain-Bandwidth Product 4.5 2 MHZ
min
SR Slew Rate 2 V/µs
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5.0V Electrical Characteristics
V
+
=
5.0V, V
=
0V, V
CM
= 2.5V, TA= 25˚C unless otherwise stated.Boldface limits apply over theTemperature Range.
Symbol Parameter
Typ
(Note 5)
Limit
(Note 2)
Units
V
OS
Input Offset Voltage 0.05 1.0
1.5
mV
max
CMRR Common Mode Rejection Ratio 0V
<
V
CM
<
3.6V 103 85
70
dB
min
PSRR Power Supply Rejection Ratio V
+
=
2.7V to 5.0V 107 85
70
dB
min
I
S
Supply Current 0.6 0.8
0.85
mA
max
I
IN
Input Current 1.5 100 pA
max
I
OS
Input offset Current 0.2 pA
A
VOL
Voltage Gain R
L
=
10k Connect to V
+
/2
V
O
=
0.2V to 4.5V
120 110
95
db
min
R
L
=
2k Connect to V
+
/2
V
O
=
0.2V to 4.5V
120 100
85
V
O
Positive Voltage Swing R
L
=
10k Connect to V
+
/2 4.89 4.82
4.80
V
min
R
L
=
2k Connect to V
+
/2 4.89 4.82
4.80
V
O
Negative Voltage Swing R
L
=
10k Connect to V
+
/2 86 160
180
mV
max
R
L
=
2k Connect to V
+
/2 86 160
180
I
O
Output Current Sourcing, V
O
=
0V
V
IN
(diff)
=
±
0.5V
15 8.0
2.5
mA min
Sinking, V
O
=
5V
V
IN
(diff)
=
±
0.5V
20 8.0
2.5
e
n
(10Hz)
Input Referred Voltage Noise 15 nV/
e
n
(1kHz)
Input Referred Voltage Noise 6.5 nV/
e
n
(30kHz)
Input Referred Voltage Noise 6.5 10 nV/
max
I
N
(1kHz) Input Referred Current Noise 0.01 pA/
GBW Gain-Bandwidth Product 5 2 MHz
min
SR Slew Rate 2.3 V/µs
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.Electrical specifications do not apply when operating the device beyond its rated operating conditions.
Note 2: All limits are guaranteed by testing or statistical analysis Note 3: Human body model, 1.5kin series with 100pF. Machine model, 200in series with 1000pF. Note 4: The maximum power dissipation is a function of T
J
(max), θJA, and TA. The maximum allowable power dissipation at any ambient temperature is
P
D
=
(T
J
(max) - TA)/θJA. All numbers apply for packages soldered directly into a PC board.
Note 5: Typical values represent the most likely parametric norm. Note 6: All numbers are typical, and apply to packages soldered directly onto PC board in still air.
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Typical Performance Characteristics
Supply Curent vs. Voltage
DS101081-35
VOSvs. V
CM
V
+
=
2.7V
DS101081-38
VOSvs V
CM
V
+
=
5.0V
DS101081-37
Source Current vs Out
V
+
=
2.7V
DS101081-28
Source Current vs V
OUT
V
+
=
5.0V
DS101081-29
Gain/Phase
DS101081-3
Sinking Current vs V
OUT
V
+
=
2.7V
DS101081-30
Sinking Current vs V
OUT
V
+
=
5.0V
DS101081-31
VOSvs V
+
DS101081-36
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Typical Performance Characteristics (Continued)
V
IN
vs V
OUT
V
+
=
2.7V, R
L
=
2k
DS101081-32
VINvs V
OUT
V
+
=
5.0V, R
L
=
2k
DS101081-33
Input Bias vs V
CM
T
A
=
25˚C
DS101081-16
Input Bias vs V
CM
T
A
=
85˚C
DS101081-5
PSRR +
DS101081-26
PSRR −
DS101081-25
Voltage Noise
DS101081-2
CMRR
DS101081-39
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Page 6
Application Hints
1.0 Noise
There are many sources of noise in a system: thermal noise, shot noise, 1/f, popcorn noise, resistor noise, just to name a few. In addition to starting with a low noise op amp, such as the LMV751, careful attention to detail will result in the low­est overall noise for the system.
1.1 To invert or not invert?
Both inverting and non-inverting amplifiers employ feedback to stabilize the closed loop gain of the block being designed. The loop gain (in decibels) equals the algebraic difference between the open loop and closed loop gains. Feedback im­proves the Total Harmonic Distortion (THD) and the output impedance. The various noise sources, when input referred, are amplified, not by the closed loop gain, but by the noise gain. For a non-inverting amplifier, the noise gain is equal to the closed loop gain, but for an inverting amplifier, the noise gain is equal to the closed loop gain plus one. For large gains, e.g., 100, the difference is negligible, but for small gains, such as one, the noise gain for the inverting amplifier would be two. This implies that non-inverting blocks are pre­ferred at low gains.
1.2 Source impedance
Because noise sources are uncorrelated, the system noise is calculated by taking the RMS sum of the various noise sources, that is, the square root of the sum ofthe squares. At very low source impedances, the voltage noise will domi­nate; at very high source impedances, the input noise cur­rent times the equivalent external resistance will dominate. For a detailed example calculation, refer to Note 1.
1.3 Bias current compensation resistor
In CMOS input op amps,the input bias currents arevery low, so there is no need to use R
COMP
(Figure 1 and 2) for bias current compensation that would normallybe used with early generation bipolar op amps. In fact, inclusion of the resistor would act as another thermal noise source in the system, in­creasing the overall noise.
1.4 Resistor types
Thermal noise is generated by any passive resistive ele­ment. This noise is white; meaning it has a constant spec­tral density. Thermal noise can be represented by a mean­square voltage generator e
R
2
in series with a noiseless
resistor, where e
R
2
is given by: Where:
e
R
2
= 4K TRB (volts)
2
Where T = temperature in ˚K
R = resistor value in ohms B = noise bandwidth in Hz K = Boltzmann’s constant (1.38 x 10-23 W-sec/˚K)
Actual resistor noise measurements may have more noise than the calculatedvalue. This additionalnoise component is known as excess noise. Excess noise has a 1/f spectral re­sponse, and isproportional to the voltage dropacross the re­sistor. It is convenient to define a noise index when referring to excess noise in resistors. The noise index is the RMS value in uV of noise in the resistor per volt of DC drop across the resistor in a decade of frequency.Noise index expressed in dB is:
NI = 20 log ((E
EX/VDC
)x106)db
Where: E
EX
= resistor excess noise in uV per frequency de-
cade. V
DC
= DC voltage drop across the resistor.
Excess noise incarbon composition resistors corresponds to a large noiseindex of +10 dB to-20 dB. Carbon film resistors have a noise index of -10 dB to -25 dB. Metal film and wire wound resistors show the least amount of excess noise, with a noise index figure of -15 dB to -40 dB.
1.5 Other noise sources:
As the op amp and resistor noise sources are decreased, other noise contributors will nowbe noticeable. Small air cur­rents across thermocouples will result in low frequency variations.Any two dissimilar metals, such as thelead on the IC and the solder and copper foil of the pc board, will form a thermocouple. The source itself mayalso generate noise.An example would be a resistive bridge. All resistive sources generate thermal noise based on the same equation listed above under resistor types.(2)
DS101081-23
Figure 1
DS101081-24
Figure 2
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Application Hints (Continued)
1.6 Putting it all together
To a first approximation, the total input referred noise of an op amp is:
E
t
2
=e
n
2
+e
req
2
+(in*Req)
2
where Req is the equivalent source resistance at the inputs. At low impedances, voltage noise dominates.At high imped­ances, current noise dominates. With a typical noise current on most CMOS input op amps of 0.01 pA/rt-Hz, the current noise contribution will be smaller than the voltage noise for Req less than one megohm.
2.0 Other Considerations
2.1 Comparator operation
Occasionally operational amplifiers are used as compara­tors. This is not optimum for the LMV751 for several rea­sons. First, the LMV751 is compensated for unity gain stabil­ity, so the speed will be less than could be obtained on the same process with a circuit specifically designed for com­parator operation. Second, op amp output stages are de­signed to be linear, and will not necessarily meet the logic levels required under all conditions. Lastly, the LMV751 has the newer PNP-NPN common emitter output stage, charac­teristic of many rail-to-rail output op amps. This means that when used in open loop applications, such as comparators, with very light loads, the output PNP will saturate, with the output current being diverted into the previous stage. As a result, the supply current will increase to the 20-30 mA. range. When used as acomparator,a resistive load between 2kand 10kshould be usedwith a small amount ofhyster­esis to alleviate this problem. When used as an op amp, the closed loop gain will drive the inverting input to within a few millivolts of the non-inverting input. This will automatically re­duce the output drive as the output settles to the correct value; thus it is onlywhen used as a comparator that the cur­rent will increase to the tens of milliampere range.
2.2 Rail-to-Rail
Because of the output stage discussed above, the LMV751 will swing “rail-to-rail” on the output. This normally means within a few hundred millivolts of each rail with a reasonable load. Referring to the Electrical Characteristics table for 2.7V to 5.0V, it can be seen that this is true for resistive loads of 2kand 10k. The input stage consists of cascoded P-channel MOSFETS, so the input common mode range in­cludes ground, but typically requires 1.2V to 1.3V headroom from the positive rail. This is better than the industry stan­dard LM324 and LM358 that have PNPinput stages, and the LMV751 has the advantage of much lower input bias cur­rents.
2.3 Loading
The LMV751 is a low noise, high speed op amp with excel­lent phase margin and stablility. Capacitive loads up to 1000 pF can behandled, but larger capacitive loadsshould be iso­lated from the output. The most straightforward way to do this is to put a resistor in series with the output. This resistor will also preventexcess power dissapationif the output is ac­cidentally shorted.
2.4 General Circuits
With the low noise and low input bias current, the LMV751 would be useful in active filters, integrators, current to volt­age converters, low frequency sine wave generators, and in­strumentation amplifiers. (3)
Note: 1. Sherwin, Jim“Noise Specs Confusing?” AN-104, National Semicon-
ductor.
2. Christensen, John, “Noise-figure curve ease the selection of low-noise op amps”, EDN, pp 81-84,Aug. 4, 1994
3. “Op Amp Circuit Collection”, AN-31, National Semiconductor.
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Page 8
Physical Dimensions inches (millimeters) unless otherwise noted
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SOT23-5
Order Number LMV751M5
NS Package Number MA05B
LMV751 Low Noise, Low Vos, Single Op Amp
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
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