Datasheet LMC8101MMX, LMC8101MM, LMC8101BPX, LMC8101BP Datasheet (NSC)

LMC8101 Rail-to-Rail Input and Output, 2.7V Op Amp in micro SMD package with Shutdown
LMC8101 Rail-to-Rail Input and Output, 2.7V Op Amp in micro SMD package with Shutdown
September 1999
General Description
The LMC8101 is a Rail-to-Rail Input and Output high perfor­mance CMOS operational amplifier. The LMC8101 is ideal for low voltage (2.7V to 10V) applications requiring Rail-to-Rail inputs and output. The LMC8101 is supplied in the die sized micro SMD as well as the 8 pin MSOP pack­ages. The micro SMD package requires 75%less board space as comparedto the SOT23-5 package. The LMC8101 is an upgrade to the industry standard LMC7101.
The LMC8101 incorporates a simple user controlled method­ology for shutdown. This allows ease of use while reducing the total supply current to 1nA typical. This extends battery life where power saving is mandated. The shutdown input threshold can be set relative to either V pin (see Application Note section for details).
Other enhancements include improved offset voltage limit, three times the output current drive and lower 1/f noise when compared to the industry standard LMC7101 Op Amp. This makes the LMC8101 ideal for use in many battery powered, wireless communication and Industrial applications.
+
or V−using the SL
Connection Diagrams
8-Pin MSOP
Features
=
V
2.7V, T
S
specified.
n Rail-to-Rail Inputs n Rail-to-Rail Output
Swing Within 35mV of Supplies (R
n Packages Offered: n micro SMD package 1.39mm x 1.41mm n MSOP package 3.0mm x 4.9mm n Low Supply Current n Shutdown Current 1µA (max) n Versatile Shutdown feature 10µs turn-on n Output Short Circuit Current 10mA n Offset Voltage n Gain-Bandwidth 1MHz n Supply Voltage Range 2.7V-10V n THD 0.18 n Voltage Noise 36
A
=
25˚C, R
to V+/2, Typical values unless
L
L
<
1mA (max)
±
5 mV (max)
=
2k)
Applications
n Portable Communication (voice, data) n Cellular Phone Power Amp Control Loop n Buffer AMP n Active Filters n Battery Sense n VCO Loop
micro SMD
%
DS101240-79
Top View
DS101240-80
Top View
© 1999 National Semiconductor Corporation DS101240 www.national.com
Ordering Information
Package Ordering Information NSC Drawing
micro SMD
8-Pin MSOP
LMC8101BP LMC8101BPX 3k Units Tape and Reel LMC8101MM LMC8101MMX 3.5k Units Tape and Reel
Number
BPA08EFB
MUA08A A11
Package
Marking
A 2
Supplied As
250 Units Tape and Reel
1k Units Tape and Reel
www.national.com 2
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
ESD Tolerance 2KV (Note 2)
differential +/−Supply Voltage
V
IN
Output Short Circuit Duration (Notes 3, 11) Supply Voltage (V
+−V−
) 12V Voltage at Input/Output pins V Current at Input Pin +/−10mA Current at Output Pin
(Notes 3, 12) +/−80mA Current at Power Supply pins +/−80mA
200V (Note 13)
+
+0.8V, V−−0.8V
Storage Temperature Range −65˚C to +150˚C Junction Temperature(Note 4) +150˚C
Soldering Information
Infrared or Convection (20 sec.) 235˚C Wave Soldering (10 sec.) 260˚C
Operating Ratings (Note 1)
Supply Voltage (V Junction Temperature Range
(Note 4) −40˚C to +85˚C
Package Thermal Resistance (θ
micro SMD 220˚C/W MSOP pkg. 8 pin Surface Mount 230˚C/W
+-V−
) 2.7V to 10V
) (Note 4)
JA
2.7V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
Boldface limits apply at the temperature extremes.
Symbol Parameter Conditions Typ
V
OS
TCV I
B
I
OS
R
in CM
C
in CM
Input Offset Voltage
Input Offset Voltage Average Drift 4 µV/˚C
OS
Input Bias Current (Note 7)
Input Offset Current 0.5 32 pA
Input Common Mode Resistance 10 G Input Common Mode Capacitance 10 pF
CMRR Common Mode Rejection Ratio 0V
PSRR Power Supply Rejection Ratio V
CMVR Input Common-Mode Voltage Range V
=
J
V
S
0V
S
S
CMRR
25˚C, V
+
=
2.7V, V
=
0V, V
=
CM
(Note 5)
±
0.70
±
=
<
=
3V
=
<
=
2.7V to 3V 57 50
=
2.7V
=
<
V
V
2.7V 78 60 dB
CM
=
<
3V
CM
0.0 0.0 V
=
>
50dB
3.0 2.7 V
=
V
S
CMRR
3V
=
>
50dB
−0.2 −0.1 V
3.2 3.1 V
A
VOL
Large Signal Voltage Gain Sourcing
=
2kto V
R
L
=
1.35V to 2.45V
V
O
Sinking
=
2kto V
R
L
=
1.35V to 0.25V
V
O
Sourcing
=
10kto V
R
L
=
1.35V to 2.65V
V
O
Sinking
=
10kto V
R
L
=
1.35V to 0.05V
V
O
+
/2
+
/2
+
/2
+
/2
3162
3162
4000
4000
+
=
/2 and R
V
V
O
Limit
(Note 6)
±
±
1
78 64
±
60
48
1000
562
804
562
1778
1000
1778
1000
>
1MΩto V+/2.
L
Units
5
7
mV
max
64 pA
max
max
min
dB
min
max
min
max
min
V/V min
V/V min
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2.7V Electrical Characteristics (Continued)
Unless otherwise specified, all limits guaranteed for T Boldface limits apply at the temperature extremes.
=
J
25˚C, V
+
=
Symbol Parameter Conditions Typ
V
O
Output Swing High
Output Swing Low
I
SC
Output Short Circuit Current Sourcing to V+/2
=
R
L
=
V
ID
=
R
L
=
V
ID
=
R
L
=
V
ID
=
R
L
=
V
ID
=
V
ID
Sinking to V
=
V
I
S
Supply Current No load, normal operation 0.70 1.0
ID
+
2kto V
100mV
10kto V
100mV
+
2kto V
−100mV
10kto V
−100mV
100mV (Note 11)
+
/2
−100mV (Note 11)
Shutdown mode 0.001 1 µA
T
on
T
off
I
in
SR Slew Rate (Note 8) A
f
u
Shutdown Turn-on time (Note 9) 10 15 µs Shutdown Turn-off time (Note 9) 1 µs SLand SDInput Current
=
=
+1, R
V
L
=
1V
V
I
PP
Unity Gain-Bandwidth V
=
I
10mV, R
L
GBW Gain Bandwidth Product f=100KHz 1 MHz e
n
Input-Referred Voltage Noise f=10KHz, R
S
=
2.7V, V
0V, V
CM
/2
+
/2
/2
+
/2
+
10kto V
=
=
/2
+
2kto V
/2 750 KHz
50 36
+
=
V
O
(Note 5)
=
/2 and R
V
L
Limit
(Note 6)
>
1MΩto V+/2.
2.67 2.64
2.62
2.69 2.68
2.67
32 100
150
10 30
70
20 14
6
10 5
4
1.2
±
1
±
64 pA
1 0.8 V/µs
Units
V
min
V
min mV
max
mV
max
mA min
mA min
mA
max
max
max
min
i
n
Input-Referred Current Noise f=10KHz 1.5
THD Total Harmonic Distortion f=1KHz, AV=+1,
=
2.2Vpp,
V
+/−5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T Boldface limits apply at the temperature extremes.
O
R
L
J
=
600to V
=
25˚C, V
+
/2
+
=
=
5V, V
−5V, V
CM
Symbol Parameter Conditions Typ
V
OS
TCV I
B
I
OS
R
in CM
C
in CM
CMRR Common-Mode Rejection Ratio −5V
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Input Offset Voltage
Input Offset Voltage Average Drift 4 µV/˚C
os
Input Bias Current (Note 7)
Input Offset Current 0.5 32 pA
Input Common Mode Resistance 10 G Input Common Mode Capacitance 10 pF
=
<
=
<
V
5V 87 70
CM
0.18
=
V
O
(Note 5)
±
0.7
±
=
0V, and R
1
>
1MΩto gnd.
L
Limit
(Note 6)
±
5
±
7
±
64 pA
67
%
Units
mV
max
max
max
dB
min
+/−5V Electrical Characteristics (Continued)
+
Unless otherwise specified, all limits guaranteed for T Boldface limits apply at the temperature extremes.
J
=
25˚C, V
Symbol Parameter Conditions Typ
=
PSRR Power Supply Rejection Ratio V
5V to 10V 80 76
S
CMVR Input Common-Mode Voltage Range CMRR 50 dB −5.3 −5.2
A
VOL
Large Signal Voltage Gain Sourcing
=
600
R
L
=
0V to 4V
V
O
Sinking
=
600
R
L
=
0V to −4V
V
O
Sourcing
=
2k
R
L
=
0V to 4.6V
V
O
Sinking
=
2k
R
L
=
0V to −4.6V
V
O
V
O
Output Swing High
Output Swing Low
I
SC
I
S
Output Short Circuit Current Sourcing, V
Supply Current No load, normal operation 1.1 1.7
=
R
600
L
=
100mV
V
ID
=
R
2k
L
=
100mV
V
ID
=
R
600
L
=
−100mV
V
ID
=
R
2k
L
=
−100mV
V
ID
(Note 3),(Note 11) Sinking, V
(Note 3),(Note 11)
ID
Shutdown mode 0.001 1 µA
T
on
T
off
I
in
SR Slew Rate
f
u
Shutdown Turn-on time (Note 9) 10 15 µs Shutdown Turn-off time (Note 9) 1 µs SLand SDInput Current
=
A
+10, R
V
=
(Note 8) Unity Gain-Bandwidth V
V
R
O
=
I
=
L
10Vpp, C
10mV
2k GBW Gain Bandwidth Product f=10KHz 1.3 MHz e
n
Input-Referred Voltage Noise f=10KHz, R
=
=
=
ID
=
=
L
s
5V, V
−100mV
L
=
−5V, V
100mV
10k,
=
1000pF
50 33
=
CM
=
V
O
(Note 5)
0V, and R
>
L
Limit
(Note 6)
72
−5.0
5.3 5.2
5.0
34.5
34.5
138
138
17.8
10
17.8
3.16
31.6
17.8
31.6
10
4.73 4.60
4.54
4.90 4.85
4.83
−4.85 −4.75
−4.65
−4.95 4.90
−4.84
49 30
25
90 60
52
1.9
±
1
±
64 pA
1.2 V/µs
840 KHz
1MΩto gnd.
Units
dB
min
V
max
V
min
V/mV
min
V/mV
min
V
min
V
min
V
max
V
max
mA min
mA min
mA
max
max
i
n
Input-Referred Current Noise f=10KHz 1.5
THD Total Harmonic Distortion f=10KHz, AV=+1,
V
O
=
8Vpp, R
=
600
L
0.2
%
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+/−5V Electrical Characteristics (Continued)
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is in-
tended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.
Note 2: Human body model, 1.5kin series with 100pF. Note 3: Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the
maximum allowed junction temperature at 150˚C. Output currents in excess of 40mA over long term may adversely affect reliability. Note 4: The maximum power dissipation is a function of T
−TA)/θJA. All numbers apply for packages soldered directly onto a PC board.
Note 5: Typical Values represent the most likely parametric norm. Note 6: All limits are guaranteed by testing or statistical analysis. Note 7: Positive current corresponds to current flowing into the device. Note 8: Slew rate is the slower of the rising and falling slew rates. Note 9: Shutdown Turn-on and Turn-offtimesaredefinedasthetimerequiredfortheoutputtoreach 90%and 10%, respectively, of its final peaktopeakswingwhen
set for Rail to Rail output swing with a 100KHz sine wave, 2Kload, and A
Note 10: Limiting input pin current is only necessary for input voltages that exceed absolute maximum input voltage ratings. Note 11: Short circuit test is a momentary test. See Note 12. Note 12: Output short circuit duration is infinite for V Note 13: machine Model, 0in series with 200pF.
, θJAand TA. The maximum allowable power dissipation at any ambient temperature is P
J(max)
=
+10.
V
<
6V. Otherwise, extended period output short circuit may damage the device.
S
=
(T
D
J(max)
Application Notes
Shutdown features:
The LMC8101 is capable of being turned off in order to con­serve power. Once in shutdown, the device supply current is drastically reduced (1µA maximum) and the output will be Tri-stated.
The shutdown feature of the LMC8101 is designed for flex­ibility.The threshold level of the SD input can be referenced to either V the SL input is connected to V erenced to V
-
or V+by setting the level on the SL input. When
-
and vice versa. This threshold will be about
-
, the SD threshold level is ref-
1.5V from the supply tied to the SL pin. So, for this example, the device will be in shutdown as long as the SD pin voltage is within 1V of V
-
. In order to ensure that the device would not chatterbetween active and shutdown states, hysteresis is built into the SD pin transition (see
Figure 1
for an illustration of this feature). The shutdown threshold and hysteresis level are independent of the supply voltage. applies equally well to the case when SL is tied to V horizontal axis is referenced to V
Figure 1
illustration
+
+
instead. The SD pin
and the
should not be set within the voltage range from 1.1V to 1.9V of the selected supply voltage since this is a transition region and the device status will be undetermined.
DS101240-82
FIGURE 1. Supply Current vs. ’SD’ Voltage
Table 1
, below, summarizes the status of the device when
the SL and SD pins are connected directly to V
-
or V+:
TABLE 1. LMC8101 Status Summary
SL SD LMC8101 Status
V
V
+
V
+
V
V
+
V
+
V
V
Shutdown
Active
Shutdown
Active
In case shutdown operation is not needed, as can be seen in Table 1, the two pins SL and SD can simply be connected to opposite supply nodes to achieve Activeoperation. The SL and SD should always be tied to a node; if left unconnected, these high impedance inputs will float to an undetermined state and the device status will be undetermined as well.
With the device in shutdown, once Activeoperation is initi­ated, there will be a finite amount of time required before the device output is settled to its final value. This time is less than 15µs. In addition, there may be some output spike dur­ing this time while the device is transitioning into a fully op­erational state. Some applications may be sensitive to this output spike and proper precautions should be taken in order to ensure proper operation at all times.
Tiny Package:
The LMC8101 is available in the micro SMD package as well the 8 pin MSOP package. The micro SMD package requires approximately 1/4 the board area of a SOT23. This package is less than 1mm in height allowing it to be placed in absolute minimum height clearance areas such as cellular handsets, LCD panels, PCMCIA cards, etc. More information about the micro SMD package can be found at: http:// www.national.com/appinfo/microsmd.
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Application Notes (Continued)
Conversion Boards:
In order to ease the evaluation of tiny packages such as the micro SMD, there is a conversion board (LMC8101CONV) available to board designers. This board converts a micro SMD device into an 8 pin DIP package (see version Board Pin out diagram) for easier handling and evaluation. This board can be ordered from National Semi­conductor by contacting http://www.national.com .
FIGURE 2. micro SMD Conversion Board pin-out
Increased Output Current:
Compared to the LMC7101, the LMC8101 has an improved output stage capable of up to three times larger output sourcing and sinking current. This improvement would allow a larger output voltage swing range compared to the LMC7101 when connected to relatively heavy loads. For lower supply voltages this is an added benefit since it in­creases the output swing range. For example, the LMC8101 can typically swing 2.5Vpp with 2mA sourcing and sinking output current (Vs=2.7V) whereas the LMC7101 output swing would be limited to 1.9Vpp under the same conditions. Also, compared to the LMC7101 in the SOT23 package, the LMC8101 can dissipate more power because both the MSOP and the micro SMD packages have 40%better heat dissipation capability.
Lower 1/f noise:
The dominant input referred noise term for the LMC8101 is the input noise voltage. Input noise current for this device is of no practical significance unless the equivalent resistance it looks into is 5Mor higher.
The LMC8101’s low frequency noise is significantly lower than that of the LMC7101. For example, at 10Hz, the input referred spot noise voltage density is 85 nV
pared to about 200nV quency range of 0.1Hz to 100Hz, the total noise of the LMC8101 will be approximately 60%less than that of the LMC7101.
Lower THD:
When connected to heavier loads, the LMC8101 has lower THD compared to the LMC7101. For example, with 5V sup­ply at 10KHz and 2Vpp swing (Av=−2), the LMC8101 THD (0.2%)is60%less than the LMC7101’s. The LMC8101 THD can be kept below 0.1%with 3Vpp at the output for up to 10KHz (refer to the Typical Characteristics Plots).
Improving the Cap load drive capability:
This can be accomplished in several ways:
Output resistive loading increase:
The Phase Margin increases with increasing load (refer to the Typical Characteristics Plots). When driving capacitive loads, stability can generally be improved by allowing some output current to flow through a load. For example, the cap
for the LMC7101. Over a fre-
DS101240-89
Figure 2
, Con-
as com-
load drive capability can be increased from 8200pF to 16000pF if the output load is increased from 5Kto 600 (Av=+10, 25%overshoot limit, 10V supply).
Isolation resistor between output and cap load:
This resistor will isolate the feedback path (where excessive phase shift due to output capacitance can cause instability) from the capacitive load. With a 10V supply,a 100isolation resistor allows unlimited capacitive load without oscillation compared to only 300pF without this resistor (Av=+1).
Higher supply voltage:
Operating the LMC8101 at higher supply voltages allows higher cap load tolerance. At 10V,the LMC8101’s low supply voltage cap load limit of 300pF improves to about 600pF (Av =
+1).
Closed loop gain increase:
As with all Op Amps, the capacitive load tolerance of the LMC8101 increases with increasing closed loop gain. In ap­plications where the load is mostly capacitive and the resis­tive loading is light, stability increases when the LMC8101 is operated at a closed loop gain larger than +1.
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Typical Performance Characteristics V
specified
=
2.7V, Single Supply, V
S
+
=
CM
=
/2, T
V
25˚C unless
A
Gain/Phase vs. Frequency
=
R
L
Gain vs. Phase for various C
=
V
S
2k, V
±
1.35V
=
±
1.35V
S
DS101240-2
L
DS101240-3
Gain/Phase vs. Frequency
=
=
2k, V
±
5V
S
R
L
Unity Gain Frequency vs. Supply Voltage
DS101240-1
DS101240-5
Gain/Phase vs. Frequency
=
R
open
L
Phase Margin vs. Supply Voltage
DS101240-4
DS101240-6
Unity Gain Frequency and Phase Margin vs. Load
DS101240-7
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Unity Gain Frequency and Phase Margin vs. Load
DS101240-8
PSRR vs. Frequency
DS101240-10
Typical Performance Characteristics V
specified (Continued)
=
2.7V, Single Supply, V
S
+
=
CM
=
/2, T
V
25˚C unless
A
PSRR vs. Frequency
Input Current vs. Temperature
=
V
10V
S
DS101240-91
DS101240-9
CMRR vs. Frequency
Vinvs. V
Input Bias Current vs. Common Mode Voltage
DS101240-11
out
DS101240-23
Vinvs. V
out
@
85˚C
DS101240-13
DS101240-83
Vinvs. V
out
DS101240-28
Vinvs. V
out
DS101240-24
Supply Current vs. Supply Voltage
DS101240-29
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Typical Performance Characteristics V
specified (Continued)
=
2.7V, Single Supply, V
S
+
=
CM
=
/2, T
V
25˚C unless
A
Delta V (Ref V
Output Positive Swing vs. Supply Voltage, R
vs. V
OS
CM
=
1.35V)
CM
=
600to V
L
DS101240-92
+
DS101240-25
Delta VOSvs. V (Ref V
CM
Output Positive Swing vs.
/2
Supply Voltage R
CM
=
5V)
DS101240-93
2k to V
+
/2
DS101240-27
=
L
Offset Voltage vs. V
supply
Output Negative Swing vs. Supply Voltage, R
=
L
600to V
DS101240-37
+
DS101240-35
/2
Output Negative Swing vs. Supply Voltage, R
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=
L
2k to V
+
/2
DS101240-36
Short Circuit Sinking Current vs. Supply Voltage
DS101240-26
Short Circuit Sourcing Current vs. Supply Voltage
DS101240-30
Typical Performance Characteristics V
specified (Continued)
=
2.7V, Single Supply, V
S
+
=
CM
=
/2, T
V
25˚C unless
A
Undistorted Output Voltage Swing vs.Output Load Resistance
DS101240-46
Small Signal Step Response
DS101240-16
Small Signal Step Response
Step Response 1%settling time and%overshoot vs.Cap Load
DS101240-14
Large Signal Step Response
DS101240-17
Large Signal Step Response
Large Signal Step Response
DS101240-15
Small Signal Step Response
DS101240-18
Large Signal Step Response
DS101240-19
DS101240-20
DS101240-21
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Typical Performance Characteristics V
specified (Continued)
=
2.7V, Single Supply, V
S
+
=
CM
=
/2, T
V
25˚C unless
A
Small Signal Step Response
DS101240-22
Slew Rate vs. Capacitive Load
DS101240-41
Voltage Noise vs. Frequency
Slew Rate vs. Supply Voltage
DS101240-38
Slew Rate vs. Capacitive Load
DS101240-42
Voltage Noise vs.
@
V
Various Frequencies
CM
Slew Rate vs. Capacitive Load
DS101240-39
Slew Rate vs. Capacitive Load
DS101240-43
THD+N vs. Amplitude
DS101240-40
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DS101240-12
DS101240-44
Typical Performance Characteristics V
specified (Continued)
=
2.7V, Single Supply, V
S
+
=
CM
=
/2, T
V
25˚C unless
A
THD+N vs. Frequency
Sourcing Current vs. Output
Voltage (V
=
10V)
S
DS101240-45
DS101240-86
Sourcing Current vs. Output
Voltage (V
Sinking Current vs.
Output Voltage (V
=
2.7V)
S
DS101240-87
=
10V)
S
DS101240-84
Sinking Current vs. Output Voltage
=
(V
2.7V)
S
DS101240-85
Cap Load vs.
Iout
DS101240-88
Cap Load vs. Isolation Resistance
DS101240-90
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Physical Dimensions inches (millimeters) unless otherwise noted
NOTES: UNLESS OTHERWISE SPECIFIED
1. EPOXY COATING
2. 63Sn/37Pb EUTECTIC BUMP
3. RECOMMENDED NON-SOLDER MASK DEFINED LANDING PAD.
4. PIN 1 IS ESTABLISHED BY LOWER LEFT CORNER WITH RESPECT TO TEXT ORIENTATION. REMAINING PINS ARE NUMBERED COUNTERCLOCKWISE.
5. XXX IN DRAWING NUMBER REPRESENTS PACKAGE SIZE VARIATION WHERE X1 IS PACKAGE WIDTH, X2 IS PACK­AGE LENGTH AND X3 IS PACKAGE HEIGHT.
6. REFERENCE JEDEC REGISTRATION MO-211, VARIATION BC.
micro SMD Package
Order Package Number LMC8101BP or LMC8101BPX
NS Package Number BPA08EFB =
X
1.387 X
1
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=
1.4127 X
2
=
0.850
3
Physical Dimensions inches (millimeters) unless otherwise noted (Continued)
LMC8101 Rail-to-Rail Input and Output, 2.7V Op Amp in micro SMD package with Shutdown
Order Package Number LMC8101MM or LMC8101MMX
8-Pin MSOP Package
NS Package Number MUA08A
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