Datasheet LM833D, LM833N, LM833DR2 Datasheet (Motorola)

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Order this document by LM833/D

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The LM833 is a standard low–cost monolithic dual general–purpose
operational amplifier employing Bipolar technology with innovative
high–performance concepts for audio systems applications. With high
frequency PNP transistors, the LM833 offers low voltage noise

(4.5 nV/

Hz

), 15 MHz gain bandwidth product, 7.0 V/µs slew rate, 0.3 mV
input offset voltage with 2.0 µV/°C temperature coefficient of input offset
voltage. The LM833 output stage exhibits no deadband crossover distortion,
large output voltage swing, excellent phase and gain margins, low open loop
high frequency output impedance and symmetrical source/sink AC
frequency response.

The LM833 is specified over the automotive temperature range and is
available in the plastic DIP and SO–8 packages (P and D suffixes). For an
improved performance dual/quad version, see the MC33079 family .

• Low Voltage Noise: 4.5 nV/ Hz

Ǹ

• High Gain Bandwidth Product: 15 MHz

• High Slew Rate: 7.0 V/µs

• Low Input Offset Voltage: 0.3 mV

• Low T.C. of Input Offset Voltage: 2.0 µV/°C

• Low Distortion: 0.002%

• Excellent Frequency Stability

• Dual Supply Operation

DUAL OPERATIONAL

AMPLIFIER

SEMICONDUCTOR

TECHNICAL DATA

8

1

N SUFFIX

PLASTIC PACKAGE

CASE 626

8

1

D SUFFIX

PLASTIC PACKAGE

CASE 751

(SO–8)

MAXIMUM RATINGS

Rating Symbol Value Unit

Supply Voltage (VCC to VEE) V
Input Differential V oltage Range (Note 1) V
Input Voltage Range (Note 1) V
Output Short Circuit Duration (Note 2) t
Operating Ambient Temperature Range T
Operating Junction Temperature T
Storage Temperature T
Maximum Power Dissipation (Notes 2 and 3) P

NOTES: 1. Either or both input voltages must not exceed the magnitude of VCC or VEE.

2.Power dissipation must be considered to ensure maximum junction temperature
(TJ) is not exceeded (see power dissipation performance characteristic).

3.Maximum value at TA ≤ 85°C.

S

IDR

IR

SC

A
J

stg

D

+36 V

30 V

±15 V

Indefinite

–40 to +85 °C

+150 °C

–60 to +150 °C

500 mW

MOTOROLA ANALOG IC DEVICE DATA

PIN CONNECTIONS

V

Output 1

Inputs 1

V

EE

1

2

3

4

1

(Top View)

8

CC

7

Output 2

6

2

Inputs 2

5

ORDERING INFORMATION

Operating

Device

LM833N
LM833D

 Motorola, Inc. 1996 Rev 0

Temperature Range

TA = – 40° to +85°C

Package

Plastic DIP

SO–8

1

LM833

ELECTRICAL CHARACTERISTICS (V

Characteristic

Input Offset Voltage (RS = 10 Ω, VO = 0 V) V
Average Temperature Coefficient of Input Offset Voltage ∆VIO/∆T – 2.0 – µV/°C

RS = 10 Ω, VO = 0 V, TA = T
Input Offset Current (VCM = 0 V, VO = 0 V) I
Input Bias Current (VCM = 0 V, VO = 0 V) I
Common Mode Input Voltage Range V

Large Signal Voltage Gain (RL = 2.0 kΩ, VO = ±10 V A
Output Voltage Swing: V

RL = 2.0 kΩ, VID = 1.0 V V

RL = 2.0 kΩ, VID = 1.0 V V

RL = 10 kΩ, VID = 1.0 V V

RL = 10 kΩ, VID = 1.0 V V
Common Mode Rejection (Vin = ±12 V) CMR 80 100 – dB
Power Supply Rejection (VS = 15 V to 5.0 V, –15 V to –5.0 V) PSR 80 115 – dB
Power Supply Current (VO = 0 V, Both Amplifiers) I

low

to T

AC ELECTRICAL CHARACTERISTICS (V

Characteristic

Slew Rate (Vin = –10 V to +10 V, RL = 2.0 kΩ, AV = +1.0) S
Gain Bandwidth Product (f = 100 kHz) GBW 10 15 – MHz
Unity Gain Frequency (Open Loop) f
Unity Gain Phase Margin (Open Loop) θ
Equivalent Input Noise Voltage (RS = 100 Ω, f = 1.0 kHz) e

Equivalent Input Noise Current (f = 1.0 kHz) i
Power Bandwidth (VO = 27 Vpp, RL = 2.0 kΩ, THD ≤ 1.0%) BWP – 120 – kHz

Distortion (RL = 2.0 kΩ, f = 20 Hz to 20 kHz, VO = 3.0 V
Channel Separation (f = 20 Hz to 20 kHz) C

= +15 V, VEE = –15 V, TA = 25°C, unless otherwise noted.)

CC

Symbol Min Typ Max Unit

IO

high

IO
IB

ICR

VOL

O+
O–
O+
O–

D

= +15 V, VEE = –15 V, TA = 25°C, unless otherwise noted.)

CC

Symbol Min Typ Max Unit

R

U
m

n

n

, AV = +1.0) THD – 0.002 – %

rms

S

– 0.3 5.0 mV

– 10 200 nA
– 300 1000 nA
–

–12

90 110 – dB

10 13.7 –

– –14.1 –10

12 13.9 –

– –14.7 –12

– 4.0 8.0 mA

5.0 7.0 – V/µs

– 9.0 – MHz
– 60 – Deg
– 4.5 –

– 0.5 –

– –120 – dB

+14
–14

+12

–

nVńHz

pAńHz

V

Ǹ

Ǹ

Figure 1. Maximum Power Dissipation

versus T emperature

800

600

400

200

D

P , MAXIMUM POWER DISSIP ATION (mW)

0
–50 0 50 100 150

TA, AMBIENT TEMPERATURE (°C)

2

Figure 2. Input Bias Current versus T emperature

1000

VCC = +15 V

800

VEE = –15 V
VCM = 0 V

600

400

200

IB

I , INPUT BIAS CURRENT (nA)

0

–55 –25 0 25 50 75 100 125

°

TA, AMBIENT TEMPERATURE (

C)

MOTOROLA ANALOG IC DEVICE DATA

LM833

Figure 3. Input Bias Current versus

Supply V oltage

800

600

400

200

, INPUT BIAS CURRENT (nA)I

IB

0

5.0 10 15 20
VCC, |VEE|, SUPPLY VOLTAGE (V)

TA = 25°C

Figure 5. DC Voltage Gain

versus T emperature

110

105

VCC = +15 V
VEE = –15 V
RL = 2.0 k

Figure 4. Supply Current versus

Supply V oltage

10

8.0

6.0

4.0

S

2.0

I , SUPPLY CURRENT (mA)

0

0 5.0 10 15 20

V

CC

I

S

V

+

O

V

EE

VCC, |VEE|, SUPPLY VOLTAGE (V)

RL =

∞

TA = 25°C

Figure 6. DC V oltage Gain versus

Supply V oltage

110

RL = 2.0 k

Ω

100

TA = 25°C

Ω

100

95

VOL

A , DC VOLTAGE GAIN (dB)

90

–55 –25 0 25 50 75 100 125

TA, AMBIENT TEMPERATURE (°C)

Figure 7. Open Loop V oltage Gain and

Phase versus Frequency

120

100

80

60

VCC = +15 V

40

VEE = –15 V

Ω

RL = 2.0 k

20

TA = 25°C

VOL

A , OPEN LOOP VOLTAGE GAIN (dB)

0

1.0 10 100 1.0 k 10 k 100 k 1.0 M 10 M

f, FREQUENCY (Hz)

Phase

Gain

90

VOL

A , DC VOLTAGE GAIN (dB)

80

5.0 10 15 20

0

45

90

135

, EXCESS PHASE (DEGREES)

∅

180

20

15

10

5.0

GBW, GAIN BANDWIDTH PRODUCT (MHz)

0

VCC = +15 V
VEE = –15 V
f = 100 kHz

VCC, |VEE|, SUPPLY VOLTAGE (V)

Figure 8. Gain Bandwidth Product

versus T emperature

–25 0 25 50 75 100 125–55

TA, AMBIENT TEMPERATURE (°C)

MOTOROLA ANALOG IC DEVICE DATA

3

Figure 9. Gain Bandwidth Product versus

Supply V oltage

30

20

f = 100 kHz

°

C

TA = 25

LM833

Figure 10. Slew Rate versus T emperature

10

8.0

µ

6.0

Falling

Rising

10

GBW, GAIN BANDWIDTH PRODUCT (MHz)

0

5.0 10 15 20
VCC, |VEE|, SUPPLY VOLTAGE (V)

SR, SLEW RATE (V/ s)

VCC = +15 V
VEE = –15 V

4.0

RL = 2.0 k
AV = +1.0

2.0
–55 –25 0 25 50 75 100 125

Ω

TA, AMBIENT TEMPERATURE (

V

in

Figure 11. Slew Rate versus Supply Voltage Figure 12. Output V oltage versus Frequency

10

RL = 2.0k
AV = +1.0
TA = 25

8.0

µ

6.0

4.0

SR, SLEW RATE (V/ s)

2.0

0

5.0 10 15 20

Ω

°

C

VCC, |VEE|, SUPPLY VOLTAGE (V)

Falling

Rising

V

in

+
–

V

O

R

L

35
30

pp

25
20
15

10

, OUTPUT VOLTAGE (V )

O

V

5.0
0

VCC = +15 V
VEE = –15 V

Ω

RL = 2.0 k
THD v 1.0%

°

C

TA = 25

10 100 1.0 k 10 k 1.0 M 10 M 100 k

f, FREQUENCY (Hz)

–
+

°

C)

V

O

R

L

Figure 13. Maximum Output V oltage

versus Supply V oltage

20

RL = 10 k

15

pp

10

5.0

0

–5.0

, OUTPUT VOLTAGE (V )

–10

O

V

–15
–20

5.0 10 15 20

Ω

TA = 25°C

VCC, |VEE|, SUPPLY VOLTAGE (V)

VO +

VO –

4

Figure 14. Output Saturation Voltage

versus T emperature

15

+V

sat

–V

14

sat

V , OUTPUT SA TURATION VOLTAGE |V|

13

–55 –25 0 25 50 75 100 125

sat

VCC = +15 V
VEE = –15 V
RL = 10 k

TA, AMBIENT TEMPERATURE (°C)

MOTOROLA ANALOG IC DEVICE DATA

Ω

LM833

Figure 15. Power Supply Rejection

140
120

100

80

–PSR

60
40

+PSR = 20 Log

20

–PSR = 20 Log

PSR, POWER SUPPLY REJECTION (dB)

0
100 1.0 k

Figure 17. T otal Harmonic Distortion

1.0

–

+

0.1

versus Frequency

VCC = +15 V
VEE = –15 V

°

C

TA = 25

∆

VO/A

DM

()

∆

V

CC

∆

VO/A

DM

()

∆

V

EE

10 k 100 k 1.0 M 10 M

f, FREQUENCY (Hz) f, FREQUENCY (Hz)

versus Frequency

V

O

R

L

∆V

–

A

DM

+

∆V

EE

+PSR

VCC = +15 V
VEE = –15 V
RL = 2.0 k
TA = 25°C

Ω

CC

Figure 16. Common Mode Rejection

versus Frequency

160

∆

V

140

∆

V

O

120

CMR = 20 Log

100

80

VCC = +15 V
VEE = –15 V

60

VCM = 0 V

∆

TA = 25

40

CMR, COMMON MODE REJECTION (dB)

20

100 1.0 k 10 k 100 k 1.0 M 10 M

–

CM

A

DM

+

VCM = ±1.5 V

°

C

∆

V

O

∆

V

CM

A

×

∆

DM

V

0

Figure 18. Input Referred Noise V oltage

versus Frequency

10

Hz

√

5.0

0.01

THD, TOT AL HARMONIC DISTORTION (%)

0.001
10 100 1.0 k 10 k 100 k

VO = 3.0 V

VO = 1.0 V

rms

Figure 19. Input Referred Noise Current

versus Frequency

2.0

)

Hz

√

1.0

0.7

0.5

0.4

0.3

, INPUT NOISE CURRENT (pA/

n

i

0.2
10 100 1.0 k 10 k 100 k

f, FREQUENCY (Hz)

VCC = +15 V
VEE = –15 V
TA = 25

°

rms

C

VCC = +15 V
VEE = –15 V

Ω

2.0

n

e , INPUT NOISE VOLTAGE (nV/ )

1.0
10 100 1.0 k 10 k 100 k

f, FREQUENCY (Hz)f, FREQUENCY (Hz)

RS = 100
TA = 25°C

Figure 20. Input Referred Noise V oltage

versus Source Resistance

100

VCC = +15 V
VEE = –15 V

Hz

Vn(total) = (inRS)2 +e

√

10

n

e , INPUT NOISE VOL TAGE (nV/ )

1.0

1.0 10 100 1.0 k 10 k 100 k 1.0 M

TA = 25

°

C

2

+

Ǹ

n

4KTRS

RS, SOURCE RESISTANCE (

Ω

)

MOTOROLA ANALOG IC DEVICE DATA

5

LM833

Figure 21. Inverting Amplifier Figure 22. Noninverting Amplifier Slew Rate

O

V , OUTPUT VOL TAGE (5.0 V/DIV)

VCC = +15 V
VEE = –15 V
RL = 2.0 k
CL = 0 pF
AV = –1.0
TA = 25

Ω

°

C

t, TIME (2.0 µs/DIV) t, TIME (2.0 µs/DIV)

VCC = +15 V
VEE = –15 V

Ω

RL = 2.0 k
CL = 0 pF
AV = +1.0

°

C

TA = 25

O

V , OUTPUT VOL TAGE (5.0 V/DIV)

Figure 23. Noninverting Amplifier Overshoot

VCC = +15 V
VEE = –15 V

Ω

RL = 2.0 k
CL = 0 pF
AV = +1.0

°

C

TA = 25

O

V , OUTPUT VOL TAGE (10 mV/DIV)

t, TIME (200 ns/DIV)

6

MOTOROLA ANALOG IC DEVICE DATA

NOTE 2

–T–

SEATING
PLANE

H

OUTLINE DIMENSIONS

58

–B–

14

F

–A–

C

N

D

G

0.13 (0.005) B

K

M

T

LM833

N SUFFIX

PLASTIC PACKAGE

CASE 626–05

ISSUE K

L

J

M

M

A

M

NOTES:

1. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.

2. PACKAGE CONTOUR OPTIONAL (ROUND OR
SQUARE CORNERS).

3. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

DIM MIN MAX MIN MAX

A 9.40 10.16 0.370 0.400
B 6.10 6.60 0.240 0.260
C 3.94 4.45 0.155 0.175
D 0.38 0.51 0.015 0.020
F 1.02 1.78 0.040 0.070
G 2.54 BSC 0.100 BSC
H 0.76 1.27 0.030 0.050
J 0.20 0.30 0.008 0.012
K 2.92 3.43 0.115 0.135
L 7.62 BSC 0.300 BSC
M ––– 10 ––– 10
N 0.76 1.01 0.030 0.040

INCHESMILLIMETERS

__

C

A

E

B

A1

D SUFFIX

PLASTIC PACKAGE

CASE 751–05

(SO–8)

ISSUE R

D

58

0.25MB

1

H

4

e

M

h

X 45

_

q

C

A

SEATING
PLANE

0.10

L

B

SS

A0.25MCB

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.

2. DIMENSIONS ARE IN MILLIMETERS.

3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.

5. DIMENSION B DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.

MILLIMETERS

DIM MIN MAX

A 1.35 1.75

A1 0.10 0.25

B 0.35 0.49
C 0.18 0.25
D 4.80 5.00
E

3.80 4.00

1.27 BSCe

H 5.80 6.20
h

0.25 0.50

L 0.40 1.25

0 7

q

__

MOTOROLA ANALOG IC DEVICE DATA

7

LM833

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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Opportunity/Affirmative Action Employer.

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8

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MOTOROLA ANALOG IC DEVICE DATA

LM833/D

*LM833/D*