Datasheet LM747MWC, LM747LMW8, LM747J-883, LM747H-883, LM747AH-MIL Datasheet (NSC)

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TL/H/11479
LM747 Dual Operational Amplifier
November 1994
LM747 Dual Operational Amplifier
General Description
The LM747 is a general purpose dual operational amplifier. The two amplifiers share a common bias network and power supply leads. Otherwise, their operation is completely inde­pendent.
Additional features of the LM747 are: no latch-up when in­put common mode range is exceeded, freedom from oscilla­tions, and package flexibility.
The LM747C/LM747E is identical to the LM747/LM747A except that the LM747C/LM747E has its specifications guaranteed over the temperature range from 0
§
Ctoa70§C
instead of
b
55§Ctoa125§C.
Features
Y
No frequency compensation required
Y
Short-circuit protection
Y
Wide common-mode and differential voltage ranges
Y
Low power consumption
Y
No latch-up
Y
Balanced offset null
Connection Diagrams
Metal Can Package
TL/H/11479– 4
Order Number LM747H
See NS Package Number H10C
Dual-In-Line Package
TL/H/11479– 5
Order Number LM747CN or LM747EN
See NS Package Number N14A
*VaA and VaB are internally connected.
C
1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.
Absolute Maximum Ratings
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications.
Supply Voltage
LM747/LM747A
g
22V
LM747C/LM747E
g
18V
Power Dissipation (Note 1) 800 mW
Differential Input Voltage
g
30V
Input Voltage (Note 2)
g
15V
Output Short-Circuit Duration Indefinite
Operating Temperature Range
LM747/LM747A
b
55§Ctoa125§C
LM747C/LM747E 0
§
Ctoa70§C
Storage Temperature Range
b
65§Ctoa150§C
Lead Temperature (Soldering, 10 sec.) 300§C
Electrical Characteristics (Note 3)
Parameter Conditions
LM747A/LM747E LM747 LM747C
Units
Min Typ Max Min Typ Max Min Typ Max
Input Offset Voltage T
A
e
25§C
R
S
s
10 kX 1.0 5.0 2.0 6.0
mV
R
S
s
50X 0.8 3.0
R
S
s
50X 4.0
mV
R
S
s
10 kX 6.0 7.5
Average Input Offset 15
mV/
§
C
Voltage Drift
Input Offset Voltage T
A
e
25§C, V
S
e
g
20V
g
10
g
15
g
15 mV
Adjustment Range
Input Offset Current T
A
e
25§C 3.0 30 20 200 20 200
nA
70 85 500 300
Average Input Offset
0.5 nA/
§
C
Current Drift
Input Bias Current T
A
e
25§C 30 80 80 500 80 500 nA
T
AMIN
s
T
A
s
T
AMAX
0.210 1.5 0.8 mA
Input Resistance T
A
e
25§C, V
S
e
g
20V 1.0 6.0 0.3 2.0 0.3 2.0
MX
V
S
e
g
20V 0.5
Input Voltage Range T
A
e
25§C
g12g
13
V
g12g
13
g12g
13
Large Signal T
A
e
25§C, R
L
t
2kX
Voltage Gain V
S
e
g
20V, V
O
e
g
15V 50 V/mV
V
S
e
g
15V, V
O
e
g
10V 50 200 20 200
V/mV
R
L
t
2kX
V
S
e
g
20V, V
O
e
g
15V 32 V/mV
V
S
e
g
15V, V
O
e
g
10V 25 15 V/mV
V
S
e
g
5V, V
O
e
g
2V 10 V/mV
Output Voltage Swing V
S
e
g
20V
R
L
t
10 kX
g
16
V
R
L
t
2kX
g
15
V
S
e
g
15V
R
L
t
10 kX
g12g
14
g12g
14
V
R
L
t
2kX
g10g
13
g10g
13
Output Short T
A
e
25§C1025352525
mA
Circuit Current 10 40
Common-Mode R
S
s
10 kX,V
CM
e
g
12V 70 90 70 90
dB
Rejection Ratio
R
S
s
50 kX,V
CM
e
g
12V 80 95
2
Electrical Characteristics (Note 3) (Continued)
Parameter Conditions
LM747A/LM747E LM747 LM747C
Units
Min Typ Max Min Typ Max Min Typ Max
Supply Voltage V
S
e
g
20V to V
S
e
g
5V
Rejection Ratio R
S
s
50X 86 96
dB
R
S
s
10 kX 77 96 77 96
Transient Response T
A
e
25§C, Unity Gain Rise Time 0.25 0.8 0.3 0.3 ms Overshoot 6.0 20 5 5 %
Bandwidth (Note 4) T
A
e
25§C 0.437 1.5 MHz
Slew Rate T
A
e
25§C, Unity Gain 0.3 0.7 0.5 0.5 V/ms
Supply Current/Amp T
A
e
25§C 2.5 1.7 2.8 1.7 2.8 mA
Power Consumption/Amp T
A
e
25§C
V
S
e
g
20V 80 150
mW
V
S
e
g
15V 50 85 50 85
LM747A V
S
e
g
20V
T
A
e
T
AMIN
165
mW
T
A
e
T
AMAX
135
LM747E V
S
e
g
20V 150
T
A
e
T
AMIN
150 mW
T
A
e
T
AMAX
150
LM747 V
S
e
g
15V
T
A
e
T
AMIN
60 100
mW
T
A
e
T
AMAX
45 75
Note 1: The maximum junction temperature of the LM747C/LM747E is 100§C. For operating at elevated temperatures, devies in the TO-5 package must be derated based on a thermal resistance of 150
§
C/W, junction to ambient, or 45§C/W, junction to case. The thermal resistance of the dual-in-line package is 100§C/
W, junction to ambient.
Note 2: For supply voltages less than
g
15V, the absolute maximum input voltage is equal to the supply voltage.
Note 3: These specifications apply for
g
5VsV
S
s
g
20V andb55§CsT
A
s
125§C for the LM747A and 0§CsT
A
s
70§C for the LM747E unless otherwise
specified. The LM747 and LM747C are specified for V
S
e
g
15V andb55§CsT
A
s
125§C and 0§CsT
A
s
70§C, respectively, unless otherwise specified.
Note 4: Calculated value from: 0.35/Rise Time (m s).
Schematic Diagram (Each Amplifier)
TL/H/11479– 1
Note: Numbers in parentheses are pin numbers for amplifier B. DIP only.
3
Typical Performance Characteristics
Temperature
Currents vs Ambient
Input Bias and Offset
vs Supply Voltage
DC Parameters
Ratio vs Frequency
Common Mode Rejection
vs Frequency
Output Voltage Swing
vs Load Resistance
Output Voltage Swing
Supply Voltage
Input Range vs
Output Swing and
vs Ambient Temperature
Normalized DC Parameters
Transient Response vs Ambient Temperature
Frequency Characteristics
vs Supply Voltage
Frequency Characteristics
vs Frequency
Output Resistance
Characteristics vs Frequency
Open Loop Transfer
TL/H/11479– 2
4
Typical Performance Characteristics (Continued)
vs Frequency
Input Capacitance
Input Resistance and
Various Bandwidths
Broadband Noise for
vs Frequency
and Current
Input Noise Voltage
Signal Pulse Response
Voltage Follower Large
TL/H/11479– 3
5
6
Physical Dimensions inches (millimeters)
Metal Can Package (H)
Order Number LM747H
NS Package Number H10C
7
LM747 Dual Operational Amplifier
Physical Dimensions inches (millimeters) (Continued)
Dual-In-Line Package (N)
Order Number LM747CN or LM747EN
NS Package Number N14A
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