The LM747 is a general purpose dual operational amplifier.
The two amplifiers share a common bias network and power
supply leads. Otherwise, their operation is completely independent.
Additional features of the LM747 are: no latch-up when input common mode range is exceeded, freedom from oscillations, and package flexibility.
The LM747C/LM747E is identical to the LM747/LM747A
except that the LM747C/LM747E has its specifications
guaranteed over the temperature range from 0
instead of
b
55§Ctoa125§C.
Ctoa70§C
§
Connection Diagrams
Metal Can Package
TL/H/11479– 4
Order Number LM747H
See NS Package Number H10C
*VaA and VaB are internally connected.
Features
Y
No frequency compensation required
Y
Short-circuit protection
Y
Wide common-mode and differential voltage ranges
Y
Low power consumption
Y
No latch-up
Y
Balanced offset null
Dual-In-Line Package
Order Number LM747CN or LM747EN
See NS Package Number N14A
TL/H/11479– 5
C
1995 National Semiconductor CorporationRRD-B30M115/Printed in U. S. A.
TL/H/11479
Page 2
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage
LM747/LM747A
LM747C/LM747E
g
22V
g
18V
Power Dissipation (Note 1)800 mW
Differential Input Voltage
g
30V
Input Voltage (Note 2)
Output Short-Circuit DurationIndefinite
Operating Temperature Range
LM747/LM747A
LM747C/LM747E0
Storage Temperature Range
Lead Temperature (Soldering, 10 sec.)300§C
Electrical Characteristics (Note 3)
ParameterConditions
Input Offset VoltageT
e
25§C
A
s
R
10 kX1.05.02.06.0
S
s
R
50X0.83.0
S
s
R
50X4.0
S
s
R
10 kX6.07.5
S
Average Input Offset15
Voltage Drift
Input Offset VoltageT
Adjustment Range
Input Offset CurrentT
e
A
e
A
e
25§C, V
g
20V
S
25§C3.0302020020200
Average Input Offset
Current Drift
Input Bias CurrentT
Input ResistanceT
Input Voltage RangeT
Large SignalT
Voltage GainV
Output Voltage Swing V
Output ShortT
Circuit Current1040
Common-ModeR
Rejection Ratio
e
25§C30808050080500nA
A
s
T
V
V
R
V
V
V
R
R
V
R
R
R
AMIN
A
S
A
A
S
S
L
S
S
S
S
L
L
S
L
L
A
S
S
s
T
T
A
AMAX
e
e
e
e
e
e
t
e
e
e
e
t
t
e
t
t
e
s
s
e
25§C, V
g
20V0.5
g
20V1.06.00.32.00.32.0
S
25§C
t
25§C, R
g
g
2kX
g
g
g
g
20V, V
15V, V
20V, V
15V, V
5V, V
20V
2kX
L
e
g
15V50V/mV
O
e
g
10V5020020200
O
e
g
15V32V/mV
O
e
g
10V2515V/mV
O
e
g
2V10V/mV
O
10 kX
2kX
g
15V
10 kX
2kX
25§C1025352525
e
CM
CM
g
e
g
10 kX,V
50 kX,V
LM747A/LM747ELM747LM747C
MinTypMaxMinTyp Max MinTyp Max
g
10
0.5nA/
0.2101.50.8mA
g12g
g
g
13
16
15
12V70907090
12V8095
b
55§Ctoa125§C
Ctoa70§C
§
b
65§Ctoa150§C
g
15
g
15mV
7085500300
g12g
13
g12g
13
g12g
g10g
14
13
g12g
g10g
14
13
g
Units
mV/
V/mV
15V
mV
mV
nA
MX
mA
dB
C
§
C
§
V
V
V
2
Page 3
Electrical Characteristics (Note 3) (Continued)
ParameterConditions
e
Supply VoltageV
Rejection RatioR
Transient ResponseT
Rise Time0.250.80.30.3ms
g
20V to V
S
s
50X8696
S
s
10 kX77967796
R
S
e
25§C, Unity Gain
A
e
g
S
Overshoot6.02055%
Bandwidth (Note 4)T
Slew RateT
Supply Current/AmpT
Power Consumption/AmpT
LM747AV
LM747EV
LM747V
Note 1: The maximum junction temperature of the LM747C/LM747E is 100§C. For operating at elevated temperatures, devies in the TO-5 package must be
derated based on a thermal resistance of 150
W, junction to ambient.
Note 2: For supply voltages less than
Note 3: These specifications apply for
specified. The LM747 and LM747C are specified for V
Note 4: Calculated value from: 0.35/Rise Time (m s).
e
25§C0.4371.5MHz
A
e
25§C, Unity Gain0.30.70.50.5V/ms
A
e
25§C2.51.72.81.72.8mA
A
e
25§C
A
e
g
20V80150
V
S
e
g
V
15V50855085
S
e
g
20V
S
e
T
T
A
AMIN
e
T
T
A
AMAX
e
g
20V150
S
e
T
T
A
AMIN
e
T
T
A
AMAX
e
g
15V
S
e
T
T
A
AMIN
e
T
T
A
AMAX
C/W, junction to ambient, or 45§C/W, junction to case. The thermal resistance of the dual-in-line package is 100§C/
§
g
15V, the absolute maximum input voltage is equal to the supply voltage.
s
g
5VsV
g
20V andb55§CsT
S
e
S
LM747A/LM747ELM747LM747C
MinTypMaxMinTypMaxMin TypMax
5V
165
135
150mW
150
60100
4575
g
15V andb55§CsT
s
125§C for the LM747A and 0§CsT
A
s
125§C and 0§CsT
A
s
70§C for the LM747E unless otherwise
A
s
70§C, respectively, unless otherwise specified.
A
Units
dB
mW
mW
mW
Schematic Diagram (Each Amplifier)
Note: Numbers in parentheses are pin numbers for amplifier B. DIP only.
TL/H/11479– 1
3
Page 4
Typical Performance Characteristics
Input Bias and Offset
Currents vs Ambient
Temperature
DC Parameters
vs Supply Voltage
Common Mode Rejection
Ratio vs Frequency
Output Voltage Swing
vs Frequency
Normalized DC Parameters
vs Ambient Temperature
Frequency Characteristics
vs Supply Voltage
Output Voltage Swing
vs Load Resistance
Transient Responsevs Ambient Temperature
Output Resistance
vs Frequency
Output Swing and
Input Range vs
Supply Voltage
Frequency Characteristics
Open Loop Transfer
Characteristics vs Frequency
TL/H/11479– 2
4
Page 5
Typical Performance Characteristics (Continued)
Input Resistance and
Input Capacitance
vs Frequency
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