Datasheet LM6171BIN, LM6171BIMDA, LM6171AIN, LM6171AIMX, LM6171AIM Datasheet (NSC)

...
LM6171 High Speed Low Power Low Distortion Voltage Feedback Amplifier
General Description
The LM6171 is a high speed unity-gain stable voltage feed­back amplifier. It offers a high slew rate of 3600V/µs and a unity-gain bandwidth of 100 MHz while consuming only 2.5 mA of supply current. The LM6171 has very impressive AC and DC performance which is a great benefit for high speed signal processing and video applications.
The
±
15V power supplies allow for large signal swings and give greater dynamic range and signal-to-noise ratio. The LM6171 has high output current drive, low SFDR and THD, ideal for ADC/DAC systems. The LM6171 is specified for
±
5V operation for portable applications.
The LM6171 is built on National’s advanced VIP
III (Verti-
cally Integrated PNP) complementary bipolar process.
Features
(Typical Unless Otherwise Noted)
n Easy-To-Use Voltage Feedback Topology n Very High Slew Rate: 3600V/µs n Wide Unity-Gain-Bandwidth Product: 100 MHz n −3 dB Frequency
@
A
V
=
+2: 62 MHz
n Low Supply Current: 2.5 mA n High CMRR: 110 dB n High Open Loop Gain: 90 dB n Specified for
±
15V and±5V Operation
Applications
n Multimedia Broadcast Systems n Line Drivers, Switchers n Video Amplifiers n NTSC, PAL
®
and SECAM Systems
n ADC/DAC Buffers n HDTV Amplifiers n Pulse Amplifiers and Peak Detectors n Instrumentation Amplifier n Active Filters
Typical Performance Characteristics
VIP™is a trademark of National Semiconductor Corporation. PAL
®
is a registered trademark of and used under licence from Advanced Micro Devices, Inc.
Closed Loop Frequency Response vs Supply Voltage (A
V
=
+1)
DS012336-5
Large Signal Pulse Response A
V
=
+1, V
S
=
±
15
DS012336-9
May 1998
LM6171 High Speed Low Power Low Distortion Voltage Feedback Amplifier
© 1999 National Semiconductor Corporation DS012336 www.national.com
Connection Diagram
Ordering Information
Package Temperature Range Transport
Media
NSC
Drawing
Industrial
−40˚C to +85˚C
8-Pin LM6171AIN Rails N08E Molded DIP LM6171BIN 8-Pin LM6171AIM, LM6171BIM Rails M08A Small Outline LM6171AIMX, LM6171BIMX Tape and Reel
8-Pin DIP/SO
DS012336-1
Top View
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
ESD Tolerance (Note 2) 2.5 kV Supply Voltage (V
+–V−
) 36V
Differential Input Voltage
(Note 11)
±
10V Common-Mode Voltage Range V
+
−1.4V to V−+ 1.4V
Output Short Circuit to Ground
(Note 3) Continuous
Storage Temperature Range −65˚C to +150˚C Maximum Junction Temperature
(Note 4) 150˚C
Operating Ratings (Note 1)
Supply Voltage 2.75V V
+
18V
Junction Temperature Range
LM6171AI, LM6171BI −40˚C T
J
+85˚C
Thermal Resistance (θ
JA
) N Package, 8-Pin Molded DIP 108˚C/W M Package, 8-Pin Surface Mount 172˚C/W
±
15V DC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J
=
25˚C, V
+
=
+15V, V
=
−15V, V
CM
=
0V, and R
L
=
1kΩ.Boldface
limits apply at the temperature extremes
Typ LM6171AI LM6171BI
Symbol Parameter Conditions (Note 5) Limit Limit Units
(Note 6) (Note 6)
V
OS
Input Offset Voltage 1.5 3 6 mV
58max
TC V
OS
Input Offset Voltage Average Drift 6 µV/˚C
I
B
Input Bias Current 1 3 3 µA
44max
I
OS
Input Offset Current 0.03 2 2 µA
33max
R
IN
Input Resistance Common Mode 40 M
Differential Mode 4.9
R
O
Open Loop 14 Output Resistance
CMRR Common Mode V
CM
=
±
10V 110 80 75 dB
Rejection Ratio 75 70 min
PSRR Power Supply V
S
=
±
15V to±5V 95 85 80 dB
Rejection Ratio 80 75 min
V
CM
Input Common-Mode CMRR 60 dB
±
13.5 V
Voltage Range
A
V
Large Signal Voltage R
L
=
1k 90 80 80 dB
Gain (Note 7) 70 70 min
R
L
=
100 83 70 70 dB
60 60 min
V
O
Output Swing R
L
=
1k 13.3 12.5 12.5 V
12 12 min
−13.3 −12.5 −12.5 V
−12 −12 max
R
L
=
100 11.6 9 9 V
8.5 8.5 min
−10.5 −9 −9 V
−8.5 −8.5 max
Continuous Output Current Sourcing, R
L
=
100 116 90 90 mA
(Open Loop) (Note 8) 85 85 min
Sinking, R
L
=
100 105 90 90 mA
85 85 max
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±
15V DC Electrical Characteristics (Continued)
Unless otherwise specified, all limits guaranteed for T
J
=
25˚C, V
+
=
+15V, V
=
−15V, V
CM
=
0V, and R
L
=
1kΩ.Boldface
limits apply at the temperature extremes
Typ LM6171AI LM6171BI
Symbol Parameter Conditions (Note 5) Limit Limit Units
(Note 6) (Note 6)
Continuous Output Current Sourcing, R
L
=
10 100 mA
(in Linear Region) Sinking, R
L
=
10 80 mA
I
SC
Output Short Sourcing 135 mA Circuit Current Sinking 135 mA
I
S
Supply Current 2.5 4 4 mA
4.5 4.5 max
±
15V AC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J
=
25˚C, V
+
=
+15V, V
=
−15V, V
CM
=
0V, and R
L
=
1kΩ.Boldface
limits apply at the temperature extremes
Typ LM6171AI LM6171BI
Symbol Parameter Conditions (Note 5) Limit Limit Units
(Note 6) (Note 6)
SR Slew Rate (Note 9) A
V
=
+2, V
IN
=
13 V
PP
3600 V/µs
A
V
=
+2, V
IN
=
10 V
PP
3000
GBW Unity Gain-Bandwidth Product 100 MHz
−3 dB Frequency A
V
=
+1 160 MHz
A
V
=
+2 62 MHz φm Phase Margin 40 deg t
s
Settling Time (0.1%)A
V
=
−1, V
OUT
=
±
5V 48 ns
R
L
=
500
Propagation Delay V
IN
=
±
5V, R
L
=
500,6 ns
A
V
=
−2
A
D
Differential Gain (Note 10) 0.03
%
φ
D
Differential Phase (Note 10) 0.5 deg
e
n
Input-Referred f=1 kHz
12
Voltage Noise
i
n
Input-Referred f=1 kHz
1
Current Noise
±
5V DC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J
=
25˚C, V
+
=
+5V, V
=
−5V, V
CM
=
0V, and R
L
=
1kΩ.Boldface
limits apply at the temperature extremes
Typ LM6171AI LM6171BI
Symbol Parameter Conditions (Note 5) Limit Limit Units
(Note 6) (Note 6)
V
OS
Input Offset Voltage 1.2 3 6 mV
58max
TC V
OS
Input Offset Voltage 4 µV/˚C Average Drift
I
B
Input Bias Current 1 2.5 2.5 µA
3.5 3.5 max
I
OS
Input Offset Current 0.03 1.5 1.5 µA
2.2 2.2 max
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±
5V DC Electrical Characteristics (Continued)
Unless otherwise specified, all limits guaranteed for T
J
=
25˚C, V
+
=
+5V, V
=
−5V, V
CM
=
0V, and R
L
=
1kΩ.Boldface
limits apply at the temperature extremes
Typ LM6171AI LM6171BI
Symbol Parameter Conditions (Note 5) Limit Limit Units
(Note 6) (Note 6)
R
IN
Input Resistance Common Mode 40 M
Differential Mode 4.9
R
O
Open Loop 14 Output Resistance
CMRR Common Mode V
CM
=
±
2.5V 105 80 75 dB
Rejection Ratio 75 70 min
PSRR Power Supply V
S
=
±
15V to±5V 95 85 80 dB
Rejection Ratio 80 75 min
V
CM
Input Common-Mode CMRR 60 dB
±
3.7 V
Voltage Range
A
V
Large Signal Voltage R
L
=
1k 84 75 75 dB
Gain (Note 7) 65 65 min
R
L
=
100 80 70 70 dB
60 60 min
V
O
Output Swing R
L
=
1k 3.5 3.2 3.2 V
33min
−3.4 −3.2 −3.2 V
−3 −3 max
R
L
=
100 3.2 2.8 2.8 V
2.5 2.5 min
−3.0 −2.8 −2.8 V
−2.5 −2.5 max
Continuous Output Current Sourcing, R
L
=
100 32 28 28 mA
(Open Loop) (Note 8) 25 25 min
Sinking, R
L
=
100 30 28 28 mA
25 25 max
I
SC
Output Short Sourcing 130 mA Circuit Current Sinking 100 mA
I
S
Supply Current 2.3 3 3 mA
3.5 3.5 max
±
5V AC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J
=
25˚C, V
+
=
+5V, V
=
−5V, V
CM
=
0V, and R
L
=
1kΩ.Boldface
limits apply at the temperature extremes
Typ LM6171AI LM6171BI
Symbol Parameter Conditions (Note 5) Limit Limit Units
(Note 6) (Note 6)
SR Slew Rate (Note 9) A
V
=
+2, V
IN
=
3.5 V
PP
750 V/µs
GBW Unity Gain-Bandwidth 70 MHz
Product
−3 dB Frequency A
V
=
+1 130 MHz
A
V
=
+2 45 φm Phase Margin 57 deg t
s
Settling Time (0.1%)A
V
=
−1, V
OUT
=
+1V, 60 ns
R
L
=
500
Propagation Delay V
IN
=
±
1V, R
L
=
500,8 ns
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±
5V AC Electrical Characteristics (Continued)
Unless otherwise specified, all limits guaranteed for T
J
=
25˚C, V
+
=
+5V, V
=
−5V, V
CM
=
0V, and R
L
=
1kΩ.Boldface
limits apply at the temperature extremes
Typ LM6171AI LM6171BI
Symbol Parameter Conditions (Note 5) Limit Limit Units
(Note 6) (Note 6)
A
V
=
−2
A
D
Differential Gain (Note 10) 0.04
%
φ
D
Differential Phase (Note 10) 0.7 deg
e
n
Input-Referred f=1 kHz
11
Voltage Noise
i
n
Input-Referred f=1 kHz
1
Current Noise
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is in­tended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.
Note 2: Human body model, 1.5 kin series with 100 pF. Note 3: Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150˚C. Note 4: The maximum power dissipation is a function of T
J(max)
, θJA, and TA. The maximum allowable power dissipation at any ambient temperature is P
D
=
(T
J(max)−TA
)/θJA. All numbers apply for packages soldered directly into a PC board.
Note 5: Typical Values represent the most likely parametric norm. Note 6: All limits are guaranteed by testing or statistical analysis. Note 7: Large signal voltage gain is the total output swing divided by the input signal required to produce that swing. For V
S
=
±
15V, V
OUT
=
±
5V. For V
S
=
+5V,
V
OUT
=
±
1V.
Note 8: The open loop output current is the output swing with the 100load resistor divided by that resistor. Note 9: Slew rate is the average of the rising and falling slew rates. Note 10: Differential gain and phase are measured with A
V
=
+2, V
IN
=
1V
PP
at 3.58 MHz and both input and output 75terminated.
Note 11: Differential input voltage is measured at V
S
=
±
15V.
Typical Performance Characteristics Unless otherwise noted, T
A
=
25˚C
Supply Current vs Supply Voltage
DS012336-20
Supply Current vs Temperature
DS012336-21
Input Offset Voltage vs Temperature
DS012336-22
Input Bias Current vs Temperature
DS012336-23
Input Offset Voltage vs Common Mode Voltage
DS012336-24
Short Circuit Current vs Temperature (Sourcing)
DS012336-25
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Typical Performance Characteristics Unless otherwise noted, T
A
=
25˚C (Continued)
Short Circuit Current vs Temperature (Sinking)
DS012336-26
Output Voltage vs Output Current
DS012336-27
Output Voltage vs Output Current
DS012336-28
CMRR vs Frequency
DS012336-29
PSRR vs Frequency
DS012336-30
PSRR vs Frequency
DS012336-31
Open Loop Frequency Response
DS012336-32
Open Loop Frequency Response
DS012336-33
Gain Bandwidth Product vs Supply Voltage
DS012336-34
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Typical Performance Characteristics Unless otherwise noted, T
A
=
25˚C (Continued)
Gain Bandwidth Product vs Load Capacitance
DS012336-35
Large Signal Voltage Gain vs Load
DS012336-36
Large Signal Voltage Gain vs Load
DS012336-37
Input Voltage Noise vs Frequency
DS012336-38
Input Voltage Noise vs Frequency
DS012336-39
Input Current Noise vs Frequency
DS012336-40
Input Current Noise vs Frequency
DS012336-41
Slew Rate vs Supply Voltage
DS012336-42
Slew Rate vs Input Voltage
DS012336-43
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Typical Performance Characteristics Unless otherwise noted, T
A
=
25˚C (Continued)
Slew Rate vs Load Capacitance
DS012336-44
Open Loop Output Impedance vs Frequency
DS012336-45
Open Loop Output Impedance vs Frequency
DS012336-46
Large Signal Pulse Response A
V
=
−1, V
S
=
±
15V
DS012336-47
Large Signal Pulse Response A
V
=
−1, V
S
=
±
5V
DS012336-48
Large Signal Pulse Response A
V
=
+1, V
S
=
±
15V
DS012336-49
Large Signal Pulse Response A
V
=
+1, V
S
=
±
5V
DS012336-50
Large Signal Pulse Response A
V
=
+2, V
S
=
±
15V
DS012336-51
Large Signal Pulse Response A
V
=
+2, V
S
=
±
5V
DS012336-52
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Typical Performance Characteristics Unless otherwise noted, T
A
=
25˚C (Continued)
Small Signal Pulse Response A
V
=
−1, V
S
=
±
15V
DS012336-53
Small Signal Pulse Response A
V
=
−1, V
S
=
±
5V
DS012336-54
Small Signal Pulse Response A
V
=
+1, V
S
=
±
15V
DS012336-55
Small Signal Pulse Response A
V
=
+1, V
S
=
±
5V
DS012336-56
Small Signal Pulse Response A
V
=
+2, V
S
=
±
15V
DS012336-57
Small Signal Pulse Response A
V
=
+2, V
S
=
±
5V
DS012336-58
Closed Loop Frequency Response vs Supply Voltage (A
V
=
+1)
DS012336-59
Closed Loop Frequency Response vs Supply Voltage (A
V
=
+2)
DS012336-60
Closed Loop Frequency Response vs Capacitive Load (A
V
=
+1)
DS012336-61
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Typical Performance Characteristics Unless otherwise noted, T
A
=
25˚C (Continued)
Closed Loop Frequency Response vs Capacitive Load (A
V
=
+1)
DS012336-62
Closed Loop Frequency Response vs Capacitive Load (A
V
=
+2)
DS012336-63
Closed Loop Frequency Response vs Capacitive Load (A
V
=
+2)
DS012336-64
Total Harmonic Distortion vs Frequency
DS012336-65
Total Harmonic Distortion vs Frequency
DS012336-66
Total Harmonic Distortion vs Frequency
DS012336-67
Total Harmonic Distortion vs Frequency
DS012336-68
Undistorted Output Swing vs Frequency
DS012336-69
Undistorted Output Swing vs Frequency
DS012336-70
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Typical Performance Characteristics Unless otherwise noted, T
A
=
25˚C (Continued)
LM6171 Simplified Schematic
Application Information
LM6171 Performance Discussion
The LM6171 is a high speed, unity-gain stable voltage feed­back amplifier. It consumes only 2.5 mA supply current while providing a gain-bandwidth product of 100 MHz and a slew rate of 3600V/µs. It also has other great features such as low differential gain and phase and high output current. The LM6171 is a good choice in high speed circuits.
The LM6171 is a true voltage feedback amplifier. Unlike cur­rent feedback amplifiers (CFAs)with a low inverting input im­pedance and a high non-inverting input impedance, both in­puts of voltage feedback amplifiers (VFAs) have high impedance nodes. The low impedance inverting input in CFAs will couple with feedback capacitor and cause oscilla­tion. As a result, CFAs cannot be used in traditional op amp circuits such as photodiode amplifiers, I-to-V converters and integrators.
LM6171 Circuit Operation
The class AB input stage in LM6171 is fully symmetrical and has a similar slewing characteristic to the current feedback amplifiers. In the LM6171 Simplfied Schematic, Q1 through Q4 form the equivalent of the current feedback input buffer, R
E
the equivalent of the feedback resistor, and stage A buff­ers the inverting input. The triple-buffered output stage iso­lates the gain stage from the load to provide low output im­pedance.
LM6171 Slew Rate Characteristic
The slew rate of LM6171 is determined by the current avail­able to charge and discharge an internal high impedance node capacitor. The current is the differential input voltage divided by the total degeneration resistor R
E
. Therefore, the
Undistorted Output Swing vs Frequency
DS012336-71
Undistorted Output Swing vs Frequency
DS012336-72
Total Power Dissipation vs Ambient Temperature
DS012336-73
DS012336-10
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Application Information (Continued)
slew rate is proportional to the input voltage level, and the higher slew rates are achievable in the lower gain configura­tions.
When a very fast large signal pulse is applied to the input of an amplifier, some overshoot or undershoot occurs. By plac­ing an external series resistor such as 1 kto the input of LM6171, the bandwidth is reduced to help lower the over­shoot.
Layout Consideration
PRINTED CIRCUIT BOARDS AND HIGH SPEED OP AMPS
There are many things to consider when designing PC boards for high speed op amps. Without proper caution, it is very easy and frustrating to have excessive ringing, oscilla­tion and other degraded AC performance in high speed cir­cuits.As a rule, the signal traces should be short and wide to provide low inductance and low impedance paths. Any un­used board space needs to be grounded to reduce stray sig­nal pickup. Critical components should also be grounded at a common point to eliminate voltage drop. Sockets add ca­pacitance to the board and can affect frequency perfor­mance. It is better to solder the amplifier directly into the PC board without using any socket.
USING PROBES
Active (FET) probes are ideal for taking high frequency mea­surements because they have wide bandwidth, high input impedance and low input capacitance. However, the probe ground leads provide a long ground loop that will produce er­rors in measurement. Instead, the probes can be grounded directly by removing the ground leads and probe jackets and using scope probe jacks.
COMPONENTS SELECTION AND FEEDBACK RESISTOR
It is important in high speed applications to keep all compo­nent leads short because wires are inductive at high fre­quency. For discrete components, choose carbon composition-type resistors and mica-type capacitors. Sur­face mount components are preferred over discrete compo­nents for minimum inductive effect.
Large values of feedback resistors can couple with parasitic capacitance and cause undesirable effects such as ringing or oscillation in high speed amplifiers. For LM6171, a feed­back resistor of 510gives optimal performance.
Compensation for Input Capacitance
The combination of an amplifier’s input capacitance with the gain setting resistors adds a pole that can cause peaking or oscillation. To solve this problem, a feedback capacitor with a value
C
F
>
(RGxCIN)/R
F
can be used to cancel that pole. For LM6171, a feedback ca­pacitor of 2 pF is recommended.
Figure 1
illustrates the com-
pensation circuit.
Power Supply Bypassing
Bypassing the power supply is necessary to maintain low power supply impedance across frequency. Both positive and negative power supplies should be bypassed individu­ally by placing 0.01 µF ceramic capacitors directly to power supply pins and 2.2 µF tantalum capacitors close to the power supply pins.
Termination
In high frequency applications, reflections occur if signals are not properly terminated.
Figure 3
shows a properly termi-
nated signal while
Figure 4
shows an improperly terminated
signal.
DS012336-11
FIGURE 1. Compensating for Input Capacitance
DS012336-12
FIGURE 2. Power Supply Bypassing
DS012336-14
FIGURE 3. Properly Terminated Signal
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Application Information (Continued)
To minimize reflection, coaxial cable with matching charac­teristic impedance to the signal source should be used. The other end of the cable should be terminated with the same value terminator or resistor. For the commonly used cables, RG59 has 75characteristic impedance, and RG58 has 50characteristic impedance.
Driving Capacitive Loads
Amplifiers driving capacitive loads can oscillate or have ring­ing at the output. To eliminate oscillation or reduce ringing, an isolation resistor can be placed as shown below in
Figure
5
. The combination of the isolation resistor and the load ca­pacitor forms a pole to increase stablility by adding more phase margin to the overall system. The desired perfor­mance depends on the value of the isolation resistor; the big­ger the isolation resistor, the more damped the pulse re­sponse becomes. For LM6171, a 50isolation resistor is recommended for initial evaluation.
Figure 6
shows the
LM6171 driving a 200 pF load with the 50isolation resistor.
Power Dissipation
The maximum power allowed to dissipate in a device is de­fined as:
P
D
=
(T
J(max)−TA
)/θ
JA
Where PDis the power dissipation in a device
T
J(max)
is the maximum junction temperature
T
A
is the ambient temperature
θ
JA
is the thermal resistance of a particular package
For example, for the LM6171 in a SO-8 package, the maxi­mum power dissipation at 25˚C ambient temperature is 730 mW.
Thermal resistance, θ
JA
, depends on parameters such as die size, package size and package material. The smaller the die size and package, the higher θ
JA
becomes. The 8-pin DIP package has a lower thermal resistance (108˚C/W) than that of 8-pin SO (172˚C/W). Therefore, for higher dissipation capability, use an 8-pin DIP package.
DS012336-15
FIGURE 4. Improperly Terminated Signal
DS012336-13
FIGURE 5. Isolation Resistor Used
to Drive Capacitive Load
DS012336-16
FIGURE 6. The LM6171 Driving a 200 pF Load
with a 50Isolation Resistor
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Application Information (Continued)
The total power dissipated in a device can be calculated as:
P
D
=
P
Q+PL
PQis the quiescent power dissipated in a device with no load connected at the output. P
L
is the power dissipated in the de­vice with a load connected at the output; it is not the power dissipated by the load.
Furthermore,
P
Q
=
supply current x total supply voltage with no load
P
L
=
output current x (voltage difference between supply voltage and output voltage of the same supply)
For example, the total power dissipated by the LM6171 with V
S
=
±
15V and output voltage of 10V into 1 kload resistor
(one end tied to ground) is
P
D
=
P
Q+PL
=
(2.5 mA) x (30V) + (10 mA) x (15V − 10V)
=
75mW+50mW
=
125 mW
Application Circuits
Design Kit
A design kit is available for the LM6171. The design kit con­tains:
High Speed Evaluation Board
LM6171 in 8-pin DIP Package
LM6171 Datasheet
Pspice Macromodel Diskette With the LM6171 Macro­model
An Amplifier Selection Guide
Pitch Pack
Apitch pack is available for the LM6171. The pitch pack con­tains:
High Speed Evaluation Board
LM6171 in 8-pin DIP Package
LM6171 Datasheet
Pspice Macromodel Diskette With the LM6171 Macro­model
Contact your local National Semiconductor sales office to obtain a pitch pack.
Fast Instrumentation Amplifier
DS012336-17
Multivibrator
DS012336-18
Pulse Width Modulator
DS012336-19
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Physical Dimensions inches (millimeters) unless otherwise noted
8-Pin Small Outline Package
NS Package Number M08A
8-Pin Molded DIP Package NS Package Number N08E
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Notes
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
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National Semiconductor Japan Ltd.
Tel: 81-3-5639-7560 Fax: 81-3-5639-7507
www.national.com
LM6171 High Speed Low Power Low Distortion Voltage Feedback Amplifier
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
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