Datasheet LM614IWMX, LM614IWM, LM614CWM, LM614CWMX, LM614MWC Datasheet (NSC)

LM614
Quad Operational Amplifier and Adjustable Reference

General Description

The LM614 consists of four op-amps and a programmable
voltage reference in a 16-pin package. The op-amp
out-performs most single-supply op-amps by providing
higher speed and bandwidth along with low supply current.
This device was specifically designed to lower cost and
board space requirements in transducer, test, measurement
and data acquisition systems.

Combining a stable voltage reference with four wide output
swing op-amps makes the LM614 ideal for single supply
transducers, signal conditioning and bridge driving where
large common-mode-signals are common. The voltage ref­erence consists of a reliable band-gap design that maintains
low dynamic output impedance (1Ω typical), excellent initial
tolerance (0.6%), and the ability to be programmed from

1.2V to 6.3V via two external resistors. The voltage refer­ence is very stableevenwhen driving large capacitive loads,
as are commonly encountered in CMOS data acquisition
systems.

As a member of National’s new Super-Block

™

family, the
LM614 is a space-saving monolithic alternative to a multichip
solution, offering a high level of integration without sacrificing
performance.

Features

Op Amp

n Low operating current: 300 µA
n Wide supply voltage range: 4V to 36V
n Wide common-mode range: V

−

to (V+− 1.8V)

n Wide differential input voltage:

±

36V

n Available in plastic package rated for Military

Temperature Range Operation

Reference

n Adjustable output voltage: 1.2V to 6.3V
n Tight initial tolerance available:

±

0.6

%

n Wide operating current range: 17 µA to 20 mA
n Tolerant of load capacitance

Applications

n Transducer bridge driver and signal processing
n Process and mass flow control systems
n Power supply voltage monitor
n Buffered voltage references for A/D’s

Connection Diagram

Ordering Information

Reference

Tolerance & V

OS

Temperature Range Package NSC

Drawing

Military Industrial Commercial

−55˚C ≤ T

A

≤ +125˚C −40˚C ≤ TA≤ +85˚C 0˚C ≤ TA≤ +70˚C

±

0.6

%

@

LM614AMN LM614AIN — 16-pin N16E
80 ppm/˚C max Molded DIP
V

OS

≤ 3.5 mV max LM614AMJ/883 — — 16-pin J16A

(Note 13) Ceramic DIP

±

2.0

%

@

LM614MN LM614BIN LM614CN 16-pin N16E
150 ppm/˚C max Molded DIP
V

OS

≤ 5.0 mV — LM614WM LM614CWM 16-pin Wide M16B

Surface Mount

Super-Block™is a trademark of National Semiconductor Corporation.

DS009326-1

May 1998

LM614 Quad Operational Amplifier and Adjustable Reference

© 1999 National Semiconductor Corporation DS009326 www.national.com

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

Voltage on Any Pins except V

R

(referred to V−pin)
(Note 2) 36V (Max)
(Note 3) −0.3V (Min)

Current through Any Input Pin &

V

R

Pin

±

20 mA

Differential Input Voltage

Military and Industrial

±

36V

Commercial

±

32V

Storage Temperature Range −65˚C ≤ T

J

≤ +150˚C

Maximum Junction Temperature 150˚C

Thermal Resistance, Junction-to-Ambient (Note 4)

N Package 100˚C
WM Package 150˚C

Soldering Information (Soldering, 10 seconds)

N Package 260˚C
WM Package 220˚C

ESD Tolerance (Note 5)

±

1kV

Operating Temperature Range

LM614AI, LM614I, LM614BI −40˚C ≤ TJ≤ +85˚C
LM614AM, LM614M −55˚C ≤ T

J

≤ +125˚C

LM614C 0˚C ≤ T

J

≤ +70˚C

Electrical Characteristics

These specifications apply for V

−

=

GND=0V, V

+

=

5V, V

CM

=

V

OUT

=

2.5V, I

R

=

100 µA, FEEDBACK pin shorted to GND,

unless otherwise specified. Limits in standard typeface are for T

J

=

25˚C; limits in boldface type apply over the Operating

Temperature Range .

Symbol Parameter Conditions Typical

(Note 6)

LM614AM LM614M Units

LM614AI LM614BI

Limits LM614I

(Note 7) LM614C

Limits

(Note 7)

I

S

Total Supply R

LOAD

=

∞

, 450 940 1000 µA max

Current 4V ≤ V

+

≤ 36V (32V for LM614C) 550 1000 1070 µA max

V

S

Supply Voltage Range 2.2 2.8 2.8 V min

2.9 3 3 V min
46 36 32 V max

43 36 32 V max

OPERATIONAL AMPLIFIER

V

OS1

VOSOver Supply 4V ≤ V+≤ 36V 1.5 3.5 5.0 mV max

(4V ≤ V

+

≤ 32V for LM614C) 2.0 6.0 7.0 mV max

V

OS2

VOSOver V

CM

V

CM

=

0V through V

CM

=

1.0 3.5 5.0 mV max

(V

+

− 1.8V), V

+

=

30V 1.5 6.0 7.0 mV max

Average VOSDrift (Note 7)

15

µV/˚C

max

I

B

Input Bias Current 10 25 35 nA max

11 30 40 nA max

I

OS

Input Offset Current 0.2 4 4 nA max

0.3 5 5 nA max

Average Offset
Drift Current

4 pA/˚C

R

IN

Input Resistance Differential 1800 MΩ

Common-Mode 3800 MΩ

C

IN

Input Capacitance Common-Mode Input 5.7 pF

e

n

Voltage Noise f=100 Hz, Input Referred 74

I

n

Current Noise f=100 Hz, Input Referred 58

CMRR Common-Mode V

+

=

30V, 0V ≤ V

CM

≤ (V+− 1.8V), 95 80 75 dB min

Rejection Ratio CMRR=20 log (∆V

CM

/∆VOS) 90 75 70 dB min

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Electrical Characteristics (Continued)

These specifications apply for V

−

=

GND=0V, V

+

=

5V, V

CM

=

V

OUT

=

2.5V, I

R

=

100 µA, FEEDBACK pin shorted to GND,

unless otherwise specified. Limits in standard typeface are for T

J

=

25˚C; limits in boldface type apply over the Operating

Temperature Range .

Symbol Parameter Conditions Typical

(Note 6)

LM614AM LM614M Units

LM614AI LM614BI

Limits LM614I

(Note 7) LM614C

Limits

(Note 7)

OPERATIONAL AMPLIFIER

PSRR Power Supply 4V ≤ V

+

≤ 30V, V

CM

=

V

+

/2, 110 80 75 dB min

Rejection Ratio PSRR=20 log (∆V

+

/∆VOS) 100 75 70 dB min

A

V

Open Loop R

L

=

10 kΩ to GND, V

+

=

30V, 500 100 94 V/mV

Voltage Gain 5V ≤ V

OUT

≤ 25V 50 40 40 min

SR Slew Rate V

+

=

30V (Note 8)

±

0.70

±

0.55

±

0.50 V/µs

±

0.65

±

0.45

±

0.45

GBW Gain Bandwidth C

L

=

50 pF 0.8 MHz

0.52 MHz

V

O1

Output Voltage R

L

=

10 kΩ to GND V

+

− 1.4 V+− 1.7 V+− 1.8 V min

Swing High V

+

=

36V (32V for LM614C) V

+

− 1.6 V+− 1.9 V+− 1.9 V min

V

O2

Output Voltage R

L

=

10 kΩ to V

+

V−+ 0.8 V−+ 0.9 V−+ 0.95 V max

Swing Low V

+

=

36V (32V for LM614C) V

−

+ 0.9 V−+ 1.0 V−+ 1.0 V max

I

OUT

Output Source V

OUT

=

2.5V, V

+IN

=

0V, 25 20 16 mA min

V

−IN

=

−0.3V 15 13 13 mA min

I

SINK

Output Sink V

OUT

=

1.6V, V

+IN

=

0V, 17 14 13 mA min

Current V

−IN

=

0.3V 98 8mA min

I

SHORT

Short Circuit Current V

OUT

=

0V, V

+IN

=

3V, 30 50 50 mA max

V

−IN

=

2V, Source 40 60 60 mA max

V

OUT

=

5V, V

+IN

=

2V, 30 60 70 mA max

V

−IN

=

3V, Sink 32 80 90 mA max

VOLTAGE REFERENCE

V

R

Voltage Reference (Note 9) 1.244 1.2365 1.2191 V min

1.2515 1.2689 V max

(

±

0.6%)(

±

2.0%)

Average Temperature (Note 10) 10 80 150 PPM/˚C
Drift max
Hysteresis (Note 11)

3.2 µV/˚C

VRChange V

R(100 µA)−VR(17 µA)

0.05 1 1 mV max

with Current 0.1 1.1 1.1 mV max

V

R(10 mA)−VR(100 µA)

1.5 5 5 mV max

(Note 12) 2.0 5.5 5.5 mV max

R Resistance ∆V

R(10→0.1 mA)

/9.9 mA 0.2 0.56 0.56 Ω max

∆V

R(100→17 µA)

/83 µA 0.6 13 13 Ω max

VRChange V

R(Vro=Vr)−VR(Vro=6.3V)

2.5 7 7 mV max

with High V

RO

(5.06V between Anode and 2.8 10 10 mV max
FEEDBACK)

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Electrical Characteristics (Continued)

These specifications apply for V

−

=

GND=0V, V

+

=

5V, V

CM

=

V

OUT

=

2.5V, I

R

=

100 µA, FEEDBACK pin shorted to GND,

unless otherwise specified. Limits in standard typeface are for T

J

=

25˚C; limits in boldface type apply over the Operating

Temperature Range .

Symbol Parameter Conditions Typical

(Note 6)

LM614AM LM614M Units

LM614AI LM614BI

Limits LM614I

(Note 7) LM614C

Limits

(Note 7)

VOLTAGE REFERENCE

VRChange with V

R(V +=5V)−VR(V +=36V)

0.1 1.2 1.2 mV max

V

+

Change (V

+

=

32V for LM614C) 0.1 1.3 1.3 mV max

V

R(V +=5V)−VR(V +=3V)

0.01 1 1 mV max

0.01 1.5 1.5 mV max

I

FB

FEEDBACK Bias V

ANODE

≤ VFB≤ 5.06V 22 35 50 nA max

Current 29 40 55 nA max

e

n

Voltage Noise BW=10 Hz to 10 kHz, 30 µV

RMS

V

RO

=

V

R

Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the de­vice beyond its rated operating conditions.

Note 2: Input voltage above V

+

is allowed.

Note 3: More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below
V

−

, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rating. Operation is undefined

and unpredictable when any parasitic diode or transistor is conducting.
Note 4: Junction temperature may be calculated using T

J

=

T

A+PDθjA

. The given thermal resistance is worst-case for packages in sockets in still air.For packages

soldered to copper-clad board with dissipation from one comparator or reference output transistor, nominal θ

jA

are 90˚C/W for the N package, WM package.

Note 5: Human body model, 100 pF discharged through a 1.5 kΩ resistor.
Note 6: Typical values in standard typeface are for T

J

=

25˚C; values in boldface type apply for the full operating temperature range. These values represent the

most likely parametric norm.

Note 7: All limits are guaranteed at room temperature (standard type face) or at operating temperature extremes (bold type face).
Note 8: Slew rate is measured with op amp in a voltage follower configuration. For rising slew rate, the input voltage is driven from 5V to 25V, and the output voltage

transition is sampled at 10V and

@

20V.For falling slew rate, the input voltage is driven from 25V to 5V,and the output voltage transition is sampled at 20V and 10V.

Note 9: V

R

is the Cathode-feedback voltage, nominally 1.244V.

Note 10: Average reference drift is calculated from the measurement of the reference voltage at 25˚C and at the temperature extremes. The drift, in ppm/˚C, is
10

6

•

∆VR/(V

R[25˚C]

•

∆TJ), where ∆VRis the lowest value subtracted from the highest, V

R[25˚C]

is the value at 25˚C, and ∆TJis the temperature range. This parameter

is guaranteed by design and sample testing.
Note 11: Hysteresis is the change in V

R

caused by a change in TJ, after the reference has been “dehysterized”. To dehysterize the reference; that is minimize the

hysteresis to the typical value, cycle its junction temperature in the following pattern, spiraling in toward 25˚C: 25˚C, 85˚C, −40˚C, 70˚C, 0˚C, 25˚C.

Note 12: Low contact resistance is required for accurate measurement.
Note 13: Amilitary RETSLM614AMX electrical test specification is available on request. The LM614AMJ/883 can also be procured as a Standard Military Drawing.

Simplified Schematic Diagrams

Op Amp

DS009326-2

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Simplified Schematic Diagrams (Continued)

Typical Performance Characteristics (Reference) T

J

=

25˚C, FEEDBACK pin shorted to V

−

=

0V, unless otherwise noted

Reference / Bias

DS009326-3

Reference Voltage
vs Temperature
on 5 Representative Units

DS009326-47

Reference Voltage Drift

DS009326-48

Accelerated Reference
Voltage Drift vs Time

DS009326-49

Reference Voltage vs
Current and Temperature

DS009326-50

Reference Voltage vs
Current and Temperature

DS009326-51

Reference Voltage vs
Reference Current

DS009326-52

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Typical Performance Characteristics (Reference) T

J

=

25˚C, FEEDBACK pin shorted to V

−

=

0V, unless otherwise noted (Continued)

Reference Voltage vs
Reference Current

DS009326-53

Reference AC
Stability Range

DS009326-54

FEEDBACK Current vs
FEEDBACK-to-Anode
Voltage

DS009326-55

FEEDBACK Current vs
FEEDBACK-to-Anode
Voltage

DS009326-56

Reference Noise Voltage
vs Frequency

DS009326-57

Reference Small-Signal
Resistance vs Frequency

DS009326-58

Reference Power-Up Time

DS009326-59

Reference Voltage with
FEEDBACK Voltage Step

DS009326-60

Reference Voltage with
100

z

12 µA Current Step

DS009326-61

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Typical Performance Characteristics (Reference) T

J

=

25˚C, FEEDBACK pin shorted to V

−

=

0V, unless otherwise noted (Continued)

Typical Performance Characteristics (Op Amps) V

+

=

5V, V

−

=

GND=0V, V

CM

=

V

+

/2, V

OUT

=

V

+

/2, T

J

=

25˚C, unless otherwise noted

Reference Step Response
for 100 µA

z

10 mA

Current Step

DS009326-62

Reference Voltage Change
with Supply Voltage Step

DS009326-63

Input Common-Mode
Voltage Range vs
Temperature

DS009326-64

VOSvs Junction
Temperature on 9
Representative Units

DS009326-65

Input Bias Current vs
Common-Mode Voltage

DS009326-66

Slew Rate vs Temperature
and Output Sink Current

DS009326-67

Large-Signal
Step Response

DS009326-68

Output Voltage Swing
vs Temp. and Current

DS009326-69

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Typical Performance Characteristics (Op Amps) V

+

=

5V, V

−

=

GND=0V, V

CM

=

V

+

/2,

V

OUT

=

V

+

/2, T

J

=

25˚C, unless otherwise noted (Continued)

Output Source Current vs
Output Voltage and Temp.

DS009326-70

Output Sink Current vs
Output Voltage and Temp.

DS009326-71

Output Swing,
Large Signal

DS009326-72

Output Impedance vs
Frequency and Gain

DS009326-73

Small-Signal Pulse
Response vs Temp.

DS009326-74

Small-Signal Pulse
Response vs Load

DS009326-75

Op Amp Voltage Noise
vs Frequency

DS009326-76

Op Amp Current Noise
vs Frequency

DS009326-77

Small-Signal Voltage
Gain vs Frequency
and Temperature

DS009326-78

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Typical Performance Characteristics (Op Amps) V

+

=

5V, V

−

=

GND=0V, V

CM

=

V

+

/2,

V

OUT

=

V

+

/2, T

J

=

25˚C, unless otherwise noted (Continued)

Small-Signal Voltage Gain
vs Frequency and Load

DS009326-79

Follower Small-Signal
Frequency Response

DS009326-80

Common-Mode Input
Voltage Rejection Ratio

DS009326-81

Power Supply Current vs
Power Supply Voltage

DS009326-7

Positive Power Supply
Voltage Rejection Ratio

DS009326-21

Negative Power Supply
Voltage Rejection Ratio

DS009326-22

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Typical Performance Characteristics (Op Amps) V

+

=

5V, V

−

=

GND=0V, V

CM

=

V

+

/2,

V

OUT

=

V

+

/2, T

J

=

25˚C, unless otherwise noted (Continued)

Typical Performance Distributions

Input Offset Current vs
Junction Temperature

DS009326-24

Input Bias Current vs
Junction Temperature

DS009326-38

Average VOSDrift
Military Temperature Range

DS009326-29

Average VOSDrift
Industrial Temperature Range

DS009326-30

Average VOSDrift
Commercial Temperature Range

DS009326-31

Average IOSDrift
Military Temperature Range

DS009326-32

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Typical Performance Distributions (Continued)

Average I

OS

Drift

Industrial Temperature Range

DS009326-33

Average IOSDrift
Commercial Temperature Range

DS009326-34

Voltage Reference Broad-Band
Noise Distribution

DS009326-35

Op Amp Voltage
Noise Distribution

DS009326-36

Op Amp Current
Noise Distribution

DS009326-37

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Application Information

VOLTAGE REFERENCE

Reference Biasing

The voltage reference is of a shunt regulator topology that
models as a simple zener diode. With current I

r

flowing in the
“forward” direction there is the familiar diode transfer func­tion. I

r

flowing in the reverse direction forces the reference
voltage to be developed from cathode to anode. The cath­ode may swing from a diode drop below V

−

to the reference
voltage or to the avalanche voltage of the parallel protection
diode, nominally 7V. A 6.3V reference with V

+

=

3V is

allowed.

The reference equivalent circuit reveals how V

r

is held at the
constant 1.2V by feedback, and how the FEEDBACK pin
passes little current.

To generate the required reverse current, typically a resistor
is connected from a supply voltage higher than the reference
voltage. Varyingthat voltage, and so varying I

r

, has small ef­fect with the equivalent series resistance of less than an ohm
at the higher currents. Alternatively, an active current source,
such as the LM134 series, may generate I

r

.

Capacitors in parallel with the reference are allowed. See the
Reference AC Stability Range typical curve for capacitance
values—from 20 µA to 3 mA any capacitor value is stable.
With the reference’s wide stability range with resistive and
capacitive loads, a wide range of RC filter values will perform
noise filtering.

Adjustable Reference

The FEEDBACK pin allows the reference output voltage,
V

ro

, to vary from 1.24V to 6.3V. The reference attempts to

hold V

r

at 1.24V.If Vris above 1.24V, the reference will con­duct current from Cathode to Anode; FEEDBACK current al­ways remains low. If FEEDBACK is connected to Anode,
then V

ro

=

V

r

=

1.24V. For higher voltages FEEDBACK is

held at a constant voltage above Anode — say 3.76V for V

ro

=

5V.Connectinga resistor across the constant V

r

generates

a current I=V

r

/R1 flowing from Cathode into FEEDBACK
node.AThevenin equivalent 3.76V is generated from FEED­BACK to Anode with R2=3.76/I. Keep I greater than one
thousand times larger than FEEDBACK bias current for

<

0.1%error—I≥32 µA for the military grade over the military
temperature range (I≥5.5 µA for a 1%untrimmed error for a
commercial part.)

Understanding that V

r

is fixed and that voltage sources, re­sistors, and capacitors may be tied to the FEEDBACK pin, a
range of V

r

temperature coefficients may be synthesized.

DS009326-9

FIGURE 1. Voltages Associated with Reference

(Current Source I

r

is External)

DS009326-10

FIGURE 2. Reference Equivalent Circuit

DS009326-11

FIGURE 3. 1.2V Reference

DS009326-12

FIGURE 4. Thevenin Equivalent

of Reference with 5V Output

DS009326-13

R1=Vr/I=1.24/32µ=39k
R2=R1 {(Vro/Vr) − 1}=39k {(5/1.24) − 1)}=118k

FIGURE 5. Resistors R1 and R2 Program

Reference Output Voltage to be 5V

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Application Information (Continued)

Connecting a resistor across Cathode-to-FEEDBACK cre­ates a 0 TC current source, but a range of TCs may be
synthesized.

Hysteresis

The reference voltage depends, slightly, on the thermal his­tory of the die. Competitive micro-power products
vary—always check the data sheet for any given device. Do
not assume that no specification means no hysteresis.

OPERATIONAL AMPLIFIERS

Any amp or the reference may be biased in any way with no
effect on the other amps or reference, except when a sub­strate diode conducts (see Guaranteed Electrical Character­istics (Note 1)). One amp input may be outside the
common-mode range, another amp may be operated as a
comparator, another with all terminals floating with no effect
on the others (tying inverting input to output and
non-inverting input to V

−

on unused amps is preferred).
Choosing operating points that cause oscillation, such as
driving too large a capacitive load, is best avoided.

Op Amp Output Stage

These op amps, like their LM124 series, have flexible and
relatively wide-swing output stages. There are simple rules
to optimize output swing, reduce cross-over distortion, and
optimize capacitive drive capability:

1. Output Swing: Unloaded, the 42 µA pull-down will bring

the output within 300 mV of V

−

over the military tempera­ture range. If more than 42 µA is required, a resistor from
output to V

−

will help. Swing across any load may be im-

proved slightly if the load can be tied to V

+

, at the cost of

poorer sinking open-loop voltage gain

DS009326-14

FIGURE 6. Output Voltage has Negative Temperature

Coefficient (TC) if R2 has Negative TC

DS009326-15

FIGURE 7. Output Voltage has Positive TC

if R1 has Negative TC

DS009326-16

FIGURE 8. Diode in Series with R1 Causes Voltage

across R1 and R2 to be Proportional to Absolute

Temperature (PTAT)

DS009326-17

I=Vr/R1=1.24/R1

FIGURE 9. Current Source is Programmed by R1

DS009326-18

FIGURE 10. Proportional-to-Absolute-Temperature

Current Source

DS009326-19

FIGURE 11. Negative-TC Current Source

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Application Information (Continued)

2. Cross-over Distortion: The LM614 has lower cross-over
distortion (a 1 V

BE

deadband versus 3 VBEfor the
LM124), and increased slew rate as shown in the char­acteristic curves. A resistor pull-up or pull-down will force
class-A operation with only the PNP or NPN output tran­sistor conducting, eliminating cross-over distortion

3. Capacitive Drive: Limited by the output pole caused by
the output resistance driving capacitive loads, a
pull-down resistor conducting 1 mA or more reduces the

output stage NPN r

e

until the output resistance is that of
the current limit 25Ω. 200 pF may then be driven without
oscillation.

Op Amp Input Stage

The lateral PNP input transistors, unlike most op amps, have
BV

EBO

equal to the absolute maximum supply voltage. Also,
they have no diode clamps to the positive supply nor across
the inputs. These features make the inputs look like high im­pedances to input sources producing large differential and
common-mode voltages.

Typical Applications

DS009326-42

FIGURE 12. Simple Low Quiescent Drain Voltage

Regulator. Total supply current approximately 320 µA,

when V

IN

=

+5V.

DS009326-43

*10k must be low
t.c. trimpot.

FIGURE 13. Ultra Low Noise 10.00V Reference. Total

output noise is typically 14 µV

RMS

.

DS009326-44

V

OUT

=

(R

1

/Pe+1)V

REF

R1,R2should be 1%metal film
P

β

should be low T.C. trim pot

FIGURE 14. Slow Rise Time Upon Power-Up,

Adjustable Transducer Bridge Driver.

Rise time is approximately 1 ms.

DS009326-46

FIGURE 15. Low Drop-Out Voltage Regulator Circuit,

drop-out voltage is typically 0.2V.

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Typical Applications (Continued)

DS009326-45

FIGURE 16. Transducer Data Acquisition System. Set zero code voltage, then adjust 10Ω gain adjust pot for full

scale.

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Physical Dimensions inches (millimeters) unless otherwise noted

Ceramic Dual-In-Line Package (J)

Order Number LM614AMJ/883

NS Package Number J16A

16-Lead Molded Small Outline Package (WM)

Order Number LM614CWM or LM614IWM

NS Package Number M16B

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Physical Dimensions inches (millimeters) unless otherwise noted (Continued)

LIFE SUPPORT POLICY

NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and
whose failure to perform when properly used in
accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a
significant injury to the user.

2. A critical component is any component of a life
support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.

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www.national.com

16-Lead Molded Dual-In-Line Package (N)

Order Number LM614CN, LM614AIN, LM614BIN, LM614AMN or LM614MN

NS Package Number N16A

LM614 Quad Operational Amplifier and Adjustable Reference

National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.