Datasheet LM613IWMX, LM613AMJ-883, LM613IWM Datasheet (NSC)

LM613
Dual Operational Amplifiers, Dual Comparators, and
Adjustable Reference

General Description

The LM613 consists of dual op-amps, dual comparators, and
a programmable voltage reference in a 16-pin package. The
op-amps out-performs most single-supply op-amps by pro­viding higher speed and bandwidth along with low supply
current. This device was specifically designed to lower cost
and board space requirements in transducer, test, measure­ment, and data acquisition systems.

Combining a stable voltage reference with wide output swing
op-amps makes the LM613 ideal for single supply transduc­ers, signal conditioning and bridge driving where large
common-mode-signals are common. The voltage reference
consists of a reliable band-gap design that maintains low dy­namic output impedance (1Ω typical), excellent initial toler­ance (0.6%), and the ability to be programmed from 1.2V to

6.3V via two external resistors. The voltage reference is very
stable even when driving large capacitive loads, as are com­monly encountered in CMOS data acquisition systems.

As a member of National’s Super-Block

™

family, the LM613
is a space-saving monolithic alternative to a multi-chip solu­tion, offering a high level of integration without sacrificing
performance.

Features

OP AMP

n Low operating current (Op Amp): 300 µA
n Wide supply voltage range: 4V to 36V
n Wide common-mode range: V

−

to (V+− 1.8V)

n Wide differential input voltage:

±

36V

n Available in plastic package rated for Military Temp.

Range Operation

REFERENCE

n Adjustable output voltage: 1.2V to 6.3V
n Tight initial tolerance available:

±

0.6

%

n Wide operating current range: 17 µA to 20 mA
n Tolerant of load capacitance

Applications

n Transducer bridge driver
n Process and mass flow control systems
n Power supply voltage monitor
n Buffered voltage references for A/D’s

Connection Diagrams

Super-Block™is a trademark of NationalSemiconductor Corporation.

DS009226-1

Top View

E Package Pinout

DS009226-48

June 1998

LM613 Dual Operational Amplifiers, Dual Comparators, and Adjustable Reference

© 1999 National Semiconductor Corporation DS009226 www.national.com

Ordering Information

Reference

Tolerance & V

OS

Temperature Range Package NSC

Drawing

Military Industrial Commercial

−55˚C ≤ T

A

≤ +125˚C −40˚C ≤ TA≤ +85˚C 0˚C ≤ TA≤ +70˚C

±

0.6

%

LM613AMN LM613AIN — 16-Pin N16E
80 ppm/˚C Max. Molded DIP
V

OS

≤ 3.5 mV LM613AMJ/883 — — 16-Pin J16A

(Note 14) Ceramic DIP

LM613AME/883 — — 20-Pin E20A

(Note 14) LCC

±

2.0

%

LM613MN LM613IN LM613CN 16-Pin N16E
150 ppm/˚C Max. Molded DIP
V

OS

≤ 5.0 mV Max. — LM613IWM 16-Pin Wide M16B

Surface Mount

www.national.com 2

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

Voltage on Any Pin Except V

R

(referred to V−pin)

(Note 2)
(Note 3)

36V (Max)

−0.3V (Min)

Current through Any Input Pin

&V

R

Pin

±

20 mA

Differential Input Voltage

Military and Industrial
Commercial

±

36V

±

32V

Storage Temperature Range −65˚C ≤ T

J

≤ +150˚C

Maximum Junction Temp.(Note 4) 150˚C

Thermal Resistance,
Junction-to-Ambient (Note 5)

N Package
WM Package

100˚C/W
150˚C/W

Soldering Information (10 Sec.)

N Package
WM Package

260˚C
220˚C

ESD Tolerance (Note 6)

±

1kV

Operating Temperature Range

LM613AI, LM613BI: −40˚C to +85˚C
LM613AM, LM613M: −55˚C to +125˚C
LM613C: 0˚C ≤ T

J

≤ +70˚C

Electrical Characteristics

These specifications apply for V

−

=

GND=0V, V

+

=

5V, V

CM

=

V

OUT

=

2.5V, I

R

=

100 µA, FEEDBACK pin shorted to GND,

unless otherwise specified. Limits in standard typeface are for T

J

=

25˚C; limits in boldface type apply over the Operating

Temperature Range.

LM613AM LM613M

Typical LM613AI LM613I

Symbol Parameter Conditions (Note 7) Limits LM613C Units

(Note 8) Limits

(Note 8)

I

S

Total Supply Current R

LOAD

=

∞

, 450 940 1000 µA (Max)

4V ≤ V

+

≤ 36V (32V for LM613C) 550 1000 1070 µA (Max)

V

S

Supply Voltage Range 2.2 2.8 2.8 V (Min)

2.9 3 3 V (Min)
46 36 32 V (Max)

43 36 32 V (Max)

OPERATIONAL AMPLIFIERS

V

OS1

VOSOver Supply 4V ≤ V+≤ 36V 1.5 3.5 5.0 mV (Max)

(4V ≤ V

+

≤ 32V for LM613C) 2.0 6.0 7.0 mV (Max)

V

OS2

VOSOver V

CM

V

CM

=

0V through V

CM

=

1.0 3.5 5.0 mV (Max)

(V

+

− 1.8V), V

+

=

30V, V

−

=

0V 1.5 6.0 7.0 mV (Max)

Average VOSDrift (Note 8) 15 µV/˚C

(Max)

I

B

Input Bias Current 10 25 35 nA (Max)

11 30 40 nA (Max)

I

OS

Input Offset Current 0.2 4 4 nA (Max)

0.3 5 5 nA (Max)

Average Offset Current

4 pA/˚C

R

IN

Input Resistance Differential 1000 MΩ

C

IN

Input Capacitance Common-Mode 6 pF

e

n

Voltage Noise f=100 Hz, Input Referred 74

I

n

Current Noise f=100 Hz, Input Referred 58

CMRR Common-Mode V

+

=

30V, 0V ≤ V

CM

≤ (V+− 1.8V) 95 80 75 dB (Min)

Rejection Ratio CMRR=20 log (∆V

CM

/∆VOS) 90 75 70 dB (Min)

PSRR Power Supply 4V ≤ V

+

≤ 30V, V

CM

=

V

+

/2, 110 80 75 dB (Min)

Rejection Ratio PSRR=20 log (∆V

+

/VOS) 100 75 70 dB (Min)

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Electrical Characteristics (Continued)

These specifications apply for V

−

=

GND=0V, V

+

=

5V, V

CM

=

V

OUT

=

2.5V, I

R

=

100 µA, FEEDBACK pin shorted to GND,

unless otherwise specified. Limits in standard typeface are for T

J

=

25˚C; limits in boldface type apply over the Operating

Temperature Range.

LM613AM LM613M

Typical LM613AI LM613I

Symbol Parameter Conditions (Note 7) Limits LM613C Units

(Note 8) Limits

(Note 8)

OPERATIONAL AMPLIFIERS

A

V

Open Loop R

L

=

10 kΩ to GND, V

+

=

30V, 500 100 94 V/mV

Voltage Gain 5V ≤ V

OUT

≤ 25V 50 40 40 (Min)

SR Slew Rate V

+

=

30V (Note 9) 0.70 0.55 0.50 V/µs

0.65 0.45 0.45

GBW Gain Bandwidth C

L

=

50 pF 0.8 MHz

0.5 MHz

V

O1

Output Voltage R

L

=

10 kΩ to GND, V

+

− 1.4 V+− 1.7 V+− 1.8 V (Min)

Swing High V

+

=

36V (32V for LM613C) V

+

− 1.6 V+− 1.9 V+− 1.9 V (Min)

V

O2

Output Voltage R

L

=

10 kΩ to V

+

,V

−

+ 0.8 V−+ 0.9 V−+ 0.95 V (Max)

Swing Low V

+

=

36V (32V for LM613C) V

−

+ 0.9 V−+ 1.0 V−+ 1.0 V (Max)

I

OUT

Output Source Current V

OUT

=

2.5V, V

+

IN

=

0V, 25 20 16 mA (Min)

V

−
IN

=

−0.3V 15 13 13 mA (Min)

I

SINK

Output Sink Current V

OUT

=

1.6V, V

+

IN

=

0V, 17 14 13 mA (Min)

V

−
IN

=

0.3V 98 8mA (Min)

I

SHORT

Short Circuit Current V

OUT

=

0V,V

+

IN

=

3V, 30 50 50 mA (Max)

V

−
IN

=

2V 40 60 60 mA (Max)

V

OUT

=

5V, V

+

IN

=

2V, 30 60 70 mA (Max)

V

−
IN

=

3V 32 80 90 mA (Max)

COMPARATORS

V

OS

Offset Voltage 4V ≤ V+≤ 36V (32V for LM613C), 1.0 3.0 5.0 mV (Max)

R

L

=

15 kΩ 2.0 6.0 7.0 mV (Max)

Offset Voltage 0V ≤ VCM≤ 36V 1.0 3.0 5.0 mV (Max)
over V

CM

V

+

=

36V, (32V for LM613C) 1.5 6.0 7.0 mV (Max)
Average Offset 15 µV/˚C
Voltage Drift (Max)

I

B

Input Bias Current 5 25 35 nA (Max)

830 40nA (Max)

I

OS

Input Offset Current 0.2 4 4 nA (Max)

0.3 5 5 nA (Max)

A

V

Voltage Gain R

L

=

10 kΩ to 36V (32V for

LM613C)

500 V/mV

2V ≤ V

OUT

≤ 27V 100 V/mV

t

r

Large Signal V

+

IN

=

1.4V, V

−
IN

=

TTL Swing, 1.5 µs

Response Time R

L

=

5.1 kΩ 2.0 µs

I

SINK

Output Sink Current V

+

IN

=

0V, V

−
IN

=

1V, 20 10 10 mA (Min)

V

OUT

=

1.5V 13 8 8 mA (Min)

V

OUT

=

0.4V 2.8 1.0 0.8 mA (Min)

2.4 0.5 0.5 mA (Min)

I

LEAK

Output Leakage V

+

IN

=

1V, V

−
IN

=

0V, 0.1 10 10 µA (Max)

Current V

OUT

=

36V (32V for LM613C) 0.2 µA (Max)

VOLTAGE REFERENCE

V

R

Voltage Reference (Note 10) 1.244 1.2365 1.2191 V (Min)

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Electrical Characteristics (Continued)

These specifications apply for V

−

=

GND=0V, V

+

=

5V, V

CM

=

V

OUT

=

2.5V, I

R

=

100 µA, FEEDBACK pin shorted to GND,

unless otherwise specified. Limits in standard typeface are for T

J

=

25˚C; limits in boldface type apply over the Operating

Temperature Range.

LM613AM LM613M

Typical LM613AI LM613I

Symbol Parameter Conditions (Note 7) Limits LM613C Units

(Note 8) Limits

(Note 8)

VOLTAGE REFERENCE

1.2515 1.2689 V (Max)

(

±

0.6%)(

±

2

%

)

Average Temp. Drift (Note 11) 10 80 150 ppm/˚C

(Max)

Hysteresis (Note 12) 3.2 µV/˚C

VRChange V

R(100 µA)−VR(17 µA)

0.05 1 1 mV (Max)

with Current 0.1 1.1 1.1 mV (Max)

V

R(10 mA)−VR(100 µA)

1.5 5 5 mV (Max)

(Note 13) 2.0 5.5 5.5 mV (Max)

R Resistance ∆V

R(10→0.1 mA)

/9.9 mA 0.2 0.56 0.56 Ω (Max)

∆V

R(100→17 µA)

/83 µA 0.6 13 13 Ω (Max)

VRChange V

R(Vro=Vr)−VR(Vro=6.3V)

2.5 7 7 mV (Max)

with High V

RO

(5.06V between Anode and 2.8 10 10 mV (Max)
FEEDBACK)

VRChange with V

R(V+=5V)−VR(V+=36V)

0.1 1.2 1.2 mV (Max)

V

ANODE

Change (V

+

=

32V for LM613C) 0.1 1.3 1.3 mV (Max)

V

R(V+=5V)−VR(V+=3V)

0.01 1 1 mV (Max)

0.01 1.5 1.5 mV (Max)

I

FB

FEEDBACK Bias V

ANODE

≤ VFB≤ 5.06V 22 35 50 nA (Max)

Current 29 40 55 nA (Max)

e

n

VRNoise 10 Hz to 10 kHz, 30 µV

RMS

V

RO

=

V

R

Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the de­vice beyond its rated operating conditions.

Note 2: Input voltage above V

+

is allowed. As long as one input pin voltage remains inside the common-mode range, the comparator will deliver the correct output.

Note 3: More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below
V

−

, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rating. Operation is undefined

and unpredictable when any parasitic diode or transistor is conducting.
Note 4: Simultaneous short-circuit of multiple comparators while using high supply voltages may force junction temperature above maximum, and thus should not

be continuous.
Note 5: Junction temperature may be calculated using T

J

=

T

A+PDθJA

. The given thermal resistance is worst-case for packages in sockets in still air. For packages

soldered to copper-clad board with dissipation from one comparator or reference output transistor, nominal θ

JA

is 90˚C/W for the N package, and 135˚C/W for the

WM package.

Note 6: Human body model, 100 pF discharged through a 1.5 kΩ resistor.
Note 7: Typical values in standard typeface are for T

J

=

25˚C; values in bold face type apply for the full operating temperature range. These values represent the

most likely parametric norm.

Note 8: All limits are guaranteed at room temperature (standard type face) or at operating temperature extremes (bold type face).
Note 9: Slew rate is measured with the op amp in a voltage follower configuration. For rising slew rate, the input voltage is driven from 5V to 25V,and the output

voltage transition is sampled at 10V and

@

20V.For falling slew rate, the input voltage is driven from 25V to 5V, and the output voltage transition is sampled at 20V

and 10V.
Note 10: V

R

is the Cathode-to-feedback voltage, nominally 1.244V.

Note 11: Average reference drift is calculated from the measurement of the reference voltage at 25˚C and at the temperature extremes. The drift, in ppm/˚C, is
10

6

•

∆VR/(V

R[25˚C]

•

∆TJ), where ∆VRis the lowest value subtracted from the highest, V

R[25˚C]

is the value at 25˚C, and ∆TJis the temperature range. This parameter

is guaranteed by design and sample testing.
Note 12: Hysteresis is the change in V

R

caused by a change in TJ, after the reference has been “dehysterized”. To dehysterize the reference; that is minimize the

hysteresis to the typical value, its junction temperature should be cycled in the following pattern, spiraling in toward 25˚C: 25˚C, 85˚C, −40˚C, 70˚C, 0˚C, 25˚C.
Note 13: Low contact resistance is required for accurate measurement.

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Electrical Characteristics (Continued)

Note 14: A military RETS 613AMX electrical test specification is available on request. The Military screened parts can also be procured as a Standard Military Draw-

ing.

Simplified Schematic Diagrams

Op Amp

DS009226-2

Comparator

DS009226-3

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Simplified Schematic Diagrams (Continued)

Typical Performance Characteristics (Reference) T

J

=

25˚C, FEEDBACK pin shorted to V

−

=

0V, unless otherwise noted

Reference/Bias

DS009226-4

Reference Voltage vs Temp.

DS009226-49

Reference Voltage Drift

DS009226-50

Accelerated Reference
Voltage Drift vs Time

DS009226-51

Reference Voltage vs
Current and Temperature

DS009226-52

Reference Voltage vs
Current and Temperature

DS009226-53

Reference Voltage vs
Reference Current

DS009226-54

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Typical Performance Characteristics (Reference) T

J

=

25˚C, FEEDBACK pin shorted to V

−

=

0V, unless otherwise noted (Continued)

Reference Voltage vs
Reference Current

DS009226-55

Reference AC
Stability Range

DS009226-56

FEEDBACK Current vs
FEEDBACK-to-Anode Voltage

DS009226-57

FEEDBACK Current vs
FEEDBACK-to-Anode Voltage

DS009226-58

Reference Noise Voltage
vs Frequency

DS009226-59

Reference Small-Signal
Resistance vs Frequency

DS009226-60

Reference Power-Up Time

DS009226-61

Reference Voltage with
FEEDBACK Voltage Step

DS009226-62

Reference Voltage with
100

z

12 µA Current Step

DS009226-63

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Typical Performance Characteristics (Reference) T

J

=

25˚C, FEEDBACK pin shorted to V

−

=

0V, unless otherwise noted (Continued)

Typical Performance Characteristics (Op Amps) V

+

=

5V, V

−

=

GND=0V, V

CM

=

V

+

/2, V

OUT

=

V

+

/2, T

J

=

25˚C, unless otherwise noted

Reference Step Response
for 100 µA

z

10 mA

Current Step

DS009226-64

Reference Voltage Change
with Supply Voltage Step

DS009226-65

Reference Change vs
Common-Mode Voltage

DS009226-66

Input Common-Mode
Voltage Range vs
Temperature

DS009226-67

VOSvs Junction
Temperature

DS009226-68

Input Bias Current vs
Common-Mode Voltage

DS009226-69

Large-Signal
Step Response

DS009226-70

Output Voltage Swing
vs Temp. and Current

DS009226-71

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Typical Performance Characteristics (Op Amps) V

+

=

5V, V

−

=

GND=0V, V

CM

=

V

+

/2,

V

OUT

=

V

+

/2, T

J

=

25˚C, unless otherwise noted (Continued)

Output Source Current vs
Output Voltage and Temp.

DS009226-72

Output Sink Current vs
Output Voltage

DS009226-73

Output Swing,
Large Signal

DS009226-74

Output Impedance vs
Frequency and Gain

DS009226-75

Small Signal Pulse
Response vs Temp.

DS009226-76

Small-Signal Pulse
Response vs Load

DS009226-77

Op Amp Voltage Noise
vs Frequency

DS009226-78

Op Amp Current Noise
vs Frequency

DS009226-79

Small-Signal Voltage Gain vs
Frequency and Temperature

DS009226-80

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Typical Performance Characteristics (Op Amps) V

+

=

5V, V

−

=

GND=0V, V

CM

=

V

+

/2,

V

OUT

=

V

+

/2, T

J

=

25˚C, unless otherwise noted (Continued)

Small-Signal Voltage Gain
vs Frequency and Load

DS009226-81

Follower Small-Signal
Frequency Response

DS009226-82

Common-Mode Input
Voltage Rejection Ratio

DS009226-83

Power Supply Current
vs Power Supply Voltage

DS009226-84

Positive Power Supply
Voltage Rejection Ratio

DS009226-85

Negative Power Supply
Voltage Rejection Ratio

DS009226-86

Slew Rate vs Temperature

DS009226-87

Input Offset Current vs
Junction Temperature

DS009226-88

Input Bias Current vs
Junction Temperature

DS009226-89

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Typical Performance Characteristics (Comparators)

Output Sink Current

DS009226-10

Input Bias Current vs
Common-Mode Voltage

DS009226-11

Comparator
Response Times — Inverting
Input, Positive Transition

DS009226-12

Comparator
Response Times — Inverting
Input, Negative Transition

DS009226-13

Comparator
Response Times — Non-Inverting
Input, Positive Transition

DS009226-14

Comparator
Response Times — Non-Inverting
Input, Negative Transition

DS009226-15

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Typical Performance Characteristics (Comparators) (Continued)

Typical Performance Distributions

Comparator
Response Times — Inverting
Input, Positive Transition

DS009226-16

Comparator
Response Times — Inverting
Input, Negative Transition

DS009226-17

Comparator
Response Times — Non-Inverting
Input, Positive Transition

DS009226-18

Comparator
Response Times — Non-Inverting
Input, Negative Transition

DS009226-19

Average VOSDrift

Military Temperature Range

DS009226-20

Average VOSDrift

Industrial Temperature Range

DS009226-21

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Typical Performance Distributions (Continued)

Average V

OS

Drift

Commercial Temperature Range

DS009226-22

Average IOSDrift

Military Temperature Range

DS009226-23

Average IOSDrift

Industrial Temperature Range

DS009226-24

Op Amp Voltage

Noise Distribution

DS009226-27

Average IOSDrift

Commercial Temperature Range

DS009226-25

Op Amp Current

Noise Distribution

DS009226-28

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Typical Performance Distributions

(Continued)

Application Information

VOLTAGE REFERENCE

Reference Biasing

The voltage reference is of a shunt regulator topology that
models as a simple zener diode. With current I

r

flowing in the
“forward” direction there is the familiar diode transfer func­tion. I

r

flowing in the reverse direction forces the reference
voltage to be developed from cathode to anode. The cath­ode may swing from a diode drop below V

−

to the reference
voltage or to the avalanche voltage of the parallel protection
diode, nominally 7V. A 6.3V reference with V

+

=

3V is

allowed.

The reference equivalent circuit reveals how V

r

is held at the
constant 1.2V by feedback, and how the FEEDBACK pin
passes little current.

To generate the required reverse current, typically a resistor
is connected from a supply voltage higher than the reference
voltage. Varying that voltage, and so varying I

r

, has small ef­fect with the equivalent series resistance of less than an ohm
at the higher currents. Alternatively,an active current source,
such as the LM134 series, may generate I

r

.

Capacitors in parallel with the reference are allowed. See the
Reference AC Stability Range typical curve for capacitance
values— from 20 µA to 3 mA any capacitor value is stable.
With the reference’s wide stability range with resistive and
capacitive loads, a wide range of RC filter values will perform
noise filtering.

Adjustable Reference

The FEEDBACK pin allows the reference output voltage,
V

ro

, to vary from 1.24V to 6.3V. The reference attempts to

hold V

r

at 1.24V. If Vris above 1.24V, the reference will con­duct current from Cathode to Anode; FEEDBACK current al­ways remains low. If FEEDBACK is connected to Anode,
then V

ro

=

V

r

=

1.24V. For higher voltages FEEDBACK is

held at a constant voltage above Anode— say 3.76V for V

ro

=

5V.Connecting a resistor across the constant V

r

generates

a current I=R1/V

r

flowing from Cathode into FEEDBACK
node.A Thevenin equivalent 3.76V is generated from FEED­BACK to Anode with R2=3.76/I. Keep I greater than one
thousand times larger than FEEDBACK bias current for

<

0.1%error— I≥32 µAfor the military grade over the military
temperature range (I≥5.5 µA for a 1%untrimmed error for a
commercial part).

Voltage Reference Broad-Band

Noise Distribution

DS009226-26

DS009226-29

FIGURE 1. Voltage Associated with Reference

(current source I

r

is external)

DS009226-30

FIGURE 2. Reference Equivalent Circuit

DS009226-31

FIGURE 3. 1.2V Reference

DS009226-32

FIGURE 4. Thevenin Equivalent of Reference

with 5V Output

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Application Information (Continued)

Understanding that V

r

is fixed and that voltage sources, re­sistors, and capacitors may be tied to the FEEDBACK pin, a
range of V

r

temperature coefficients may be synthesized.

Connecting a resistor across Cathode-to-FEEDBACK cre­ates a 0 TC current source, but a range of TCs may be
synthesized.

DS009226-33

R1=Vr/I=1.24/32µ=39k
R2=R1 {(Vro/Vr) − 1}=39k {(5/1.24) − 1)}=118k

FIGURE 5. Resistors R1 and R2 Program Reference

Output Voltage to be 5V

DS009226-34

FIGURE 6. Output Voltage has Negative Temperature

Coefficient (TC) if R2 has Negative TC

DS009226-35

FIGURE 7. Output Voltage has Positive TC

if R1 has Negative TC

DS009226-36

FIGURE 8. Diode in Series with R1 Causes Voltage

Across R1 and R2 to be Proportional to Absolute

Temperature (PTAT)

DS009226-37

I=Vr/R1=1.24/R1

FIGURE 9. Current Source is Programmed by R1

DS009226-38

FIGURE 10. Proportional-to-Absolute-Temperature

Current Source

DS009226-39

FIGURE 11. Negative-TC Current Source

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Application Information (Continued)

Reference Hysteresis

The reference voltage depends, slightly, on the thermal his­tory of the die. Competitive micro-power products vary— al­ways check the data sheet for any given device. Do not as­sume that no specification means no hysteresis.

OPERATIONAL AMPLIFIERS AND COMPARATORS

Any amp, comparator, or the reference may be biased in any
way with no effect on the other sections of the LM613, ex­cept when a substrate diode conducts, see Electrical Char­acteristics (Note 1). For example, one amp input may be out­side the common-mode range, another amp may be
operating as a comparator, and all other sections may have
all terminals floating with no effect on the others. Tying in­verting input to output and non-inverting input to V

−

on un­used amps is preferred. Unused comparators should have
non-inverting input and output tied to V

+

, and inverting input

tied to V

−

. Choosing operating points that cause oscillation,

such as driving too large a capacitive load, is best avoided.

Op Amp Output Stage

These op amps, like the LM124 series, have flexible and
relatively wide-swing output stages. There are simple rules
to optimize output swing, reduce cross-over distortion, and
optimize capacitive drive capability:

1. Output Swing: Unloaded, the 42 µA pull-down will bring

the output within 300 mV of V

−

over the military tempera­ture range. If more than 42 µAis required, a resistor from
output to V

−

will help. Swing across any load may be im-

proved slightly if the load can be tied to V

+

, at the cost of

poorer sinking open-loop voltage gain.

2. Cross-Over Distortion: The LM613 has lower cross-over
distortion (a 1 V

BE

deadband versus 3 VBEfor the

LM124), and increased slew rate as shown in the char­acteristic curves.A resistor pull-up or pull-down will force
class-A operation with only the PNP or NPN output tran­sistor conducting, eliminating cross-over distortion.

3. Capacitive Drive: Limited by the output pole caused by
the output resistance driving capacitive loads, a
pull-down resistor conducting 1 mA or more reduces the
output stage NPN r

e

until the output resistance is that of
the current limit 25Ω. 200 pF may then be driven without
oscillation.

Comparator Output Stage

The comparators, like the LM139 series, have open-collector
output stages. A pull-up resistor must be added from each
output pin to a positive voltage for the output transistor to
switch properly. When the output transistor is OFF, the out­put voltage will be this external positive voltage.

For the output voltage to be under the TTL-low voltage
threshold when the output transistor is ON, the output cur­rent must be less than 8 mA (over temperature). This im­pacts the minimum value of pull-up resistor.

The offset voltage may increase when the output voltage is
low and the output current is less than 30 µA. Thus, for best
accuracy, the pull-up resistor value should be low enough to
allow the output transistor to sink more than 30 µA.

Op Amp and Comparator Input Stage

The lateral PNP input transistors, unlike those of most op
amps, have BV

EBO

equal to the absolute maximum supply
voltage.Also, they have no diode clamps to the positive sup­ply nor across the inputs. These features make the inputs
look like high impedances to input sources producing large
differential and common-mode voltages.

Typical Applications

DS009226-40

FIGURE 12. High Current, High Voltage Switch

www.national.com17

Typical Applications (Continued)

DS009226-41

FIGURE 13. High Speed Level Shifter. Response time is approximately

1.5 µs, where output is either approximately +V or −V.

DS009226-42

FIGURE 14. Low Voltage Regulator. Dropout voltage is approximately 0.2V.

DS009226-43

*10k must be low
t.c. trimpot

FIGURE 15. Ultra Low Noise, 10.00V Reference. Total output noise is typically 14 µV

RMS

.

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Typical Applications (Continued)

DS009226-44

FIGURE 16. Basic Comparator

DS009226-45

FIGURE 17. Basic Comparator with External Strobe

DS009226-46

FIGURE 18. Wide-Input Range

Comparator with TTL Output

DS009226-47

FIGURE 19. Comparator with
Hysteresis (∆V

H

=

+

V(1k/1M))

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Physical Dimensions inches (millimeters) unless otherwise noted

20-Lead Small Outline Package (E)

Order Number LM613AME/883

NS Package Number E20A

16-Lead Ceramic Dual-In-Line Package (J)

Order Number LM613AMJ/883

NS Package Number J16A

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Physical Dimensions inches (millimeters) unless otherwise noted (Continued)

16-Lead Small Outline Package (WM)

Order Number LM613IWM

NS Package Number M16B

16-Lead Molded Dual-In-Line Package (N)

Order Number LM613CN, LM613AIN, LM613IN, LM613AMN or LM613MN

NS Package Number N16A

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Notes

LIFE SUPPORT POLICY

NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL
COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and
whose failure to perform when properly used in
accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a
significant injury to the user.

2. A critical component is any component of a life
support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.

National Semiconductor
Corporation

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www.national.com

LM613 Dual Operational Amplifiers, Dual Comparators, and Adjustable Reference

National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.