Datasheet LM611IM, LM611CMX, LM611CM, LM611IMX, LM611AMJ-883 Datasheet (NSC)

LM611
Operational Amplifier and Adjustable Reference

General Description

The LM611 consists of a single-supply op-amp and a pro­grammable voltage reference in one space saving 8-pin
package. The op-amp out-performs most single-supply
op-amps by providing higher speed and bandwidth along
with low supply current. This device was specifically de­signed to lower cost and board space requirements in trans­ducer, test, measurement and data acquisition systems.

Combining a stable voltage reference with a wide output
swing op-amp makes the LM611 ideal for single supply
transducers, signal conditioning and bridge driving where
large common-modesignalsare common. The voltage refer­ence consists of a reliable band-gap design that maintains
low dynamic output impedance (1Ω typical), excellent initial
tolerance (0.6%), and the ability to be programmed from

1.2V to 6.3V via two external resistors. The voltage refer­ence is very stable even when driving large capacitive loads,
as are commonly encountered in CMOS data acquisition
systems.

As a member of National’s Super-Block

™

family, the LM611
is a space-saving monolithic alternative to a multi-chip solu­tion, offering a high level of integration without sacrificing
performance.

Features

OP AMP

n Low operating current: 300 µA (op amp)
n Wide supply voltage range: 4V to 36V
n Wide common-mode range: V

−

to (V+−1.8V)

n Wide differential input voltage:

±

36V

n Available in low cost 8-pin DIP
n Available in plastic package rated for Military

Temperature Range Operation

REFERENCE

n Adjustable output voltage: 1.2V to 6.3V
n Tight initial tolerance available:

±

0.6

%

n Wide operating current range: 17 µA to 20 mA
n Reference floats above ground
n Tolerant of load capacitance

Applications

n Transducer bridge driver
n Process and Mass Flow Control systems
n Power supply voltage monitor
n Buffered voltage references for A/D’s

Connection Diagrams

Super-Block™is a trademark of National Semiconductor Corporation.

DS009221-1

DS009221-2

May 1998

LM611 Operational Amplifier and Adjustable Reference

© 1999 National Semiconductor Corporation DS009221 www.national.com

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

Voltage on Any Pins Except V

R

(referred to V−pin) 36V (Max)
(Note 2) −0.3V (Min)

Current through Any Input Pin and

V

R

Pin

±

20 mA

Differential Input Voltage

Military and Industrial

±

36V

Commercial

±

32V

Storage Temperature Range −65˚C≤T

J

≤+150˚C

Maximum Junction Temperature 150˚C

Thermal Resistance, Junction-to-Ambient (Note 3)

N Package 100˚C/W
M Package 150˚C/W

Soldering Information Soldering (10 seconds)

N Package 260˚C
M Package 220˚C

ESD Tolerance (Note 4)

±

1kV

Operating Temperature Range

LM611AI, LM611I, LM611BI −40˚C≤TJ≤+85˚C
LM611AM, LM611M −55˚C≤T

J

≤+125˚C

LM611C 0˚C≤T

J

≤70˚C

Electrical Characteristics

These specifications apply for V

−

=

GND=0V, V

+

=

5V, V

CM

=

V

OUT

=

2.5V, I

R

=

100 µA, FEEDBACK pin shorted to GND,

unless otherwise specified. Limits in standard typeface are for T

J

=

25˚C; limits in boldface type apply over the Operating

Temperature Range.

LM611M

LM611AM LM611BI

Symbol Parameter Conditions Typical LM611AI LM611I Units

(Note 5) Limits LM611C

(Note 6) Limits

(Note 6)

I

S

Total Supply Current R

LOAD

=

∞

, 210 300 350 µA max

4V ≤ V

+

≤ 36V (32V for LM611C) 221 320 370 µA max

V

S

Supply Voltage Range 2.2 2.8 2.8 V min

2.9 3 3 V min
46 36 32 V max

43 36 32 V max

OPERATIONAL AMPLIFIER

V

OS1

VOSOver Supply 4V ≤ V+≤ 36V 1.5 3.5 5.0 mV max

(4V ≤ V

+

≤ 32V for LM611C) 2.0 6.0 7.0 mV max

V

OS2

VOSOver V

CM

V

CM

=

0V through V

CM

=

1.0 3.5 5.0 mV max

(V

+

− 1.8V), V

+

=

30V, V

−

=

0V 1.5 6.0 7.0 mV max

Average VOSDrift (Note 6)

15

µV/˚C

max

I

B

Input Bias Current 10 25 35 nA max

11 30 40 nA max

I

OS

Input Offset Current 0.2 4 4 nA max

0.3 5 5 nA max

Average Offset Drift
Current

4 pA/˚C

R

IN

Input Resistance Differential 1800 MΩ

Common-Mode 3800 MΩ

C

IN

Input Capacitance Common-Mode 5.7 pF

e

n

Voltage Noise f=100 Hz,

Input Referred

74

I

n

Current Noise f=100 Hz,

Input Referred

58

CMRR Common-Mode V

+

=

30V, 0V ≤ V

CM

≤ (V+− 1.8V) 95 80 75 dB min

Rejection-Ratio CMRR=20 log (∆V

CM

/∆VOS) 90 75 70 dB min

www.national.com 2

Electrical Characteristics (Continued)

These specifications apply for V

−

=

GND=0V, V

+

=

5V, V

CM

=

V

OUT

=

2.5V, I

R

=

100 µA, FEEDBACK pin shorted to GND,

unless otherwise specified. Limits in standard typeface are for T

J

=

25˚C; limits in boldface type apply over the Operating

Temperature Range.

LM611M

LM611AM LM611BI

Symbol Parameter Conditions Typical LM611AI LM611I Units

(Note 5) Limits LM611C

(Note 6) Limits

(Note 6)

OPERATIONAL AMPLIFIER

PSRR Power Supply 4V ≤ V

+

≤ 30V, V

CM

=

V

+

/2, 110 80 75 dB min

Rejection-Ratio PSRR=20 log (∆V

+

/∆VOS) 100 75 70 dB min

A

V

Open Loop R

L

=

10 kΩ to GND, V

+

=

30V, 500 100 94 V/mV

Voltage Gain 5V ≤ V

OUT

≤ 25V 50 40 40 min

SR Slew Rate V

+

=

30V (Note 7) 0.70 0.55 0.50 V/µs

0.65 0.45 0.45

GBW Gain Bandwidth C

L

=

50 pF 0.80 MHz

0.50

V

O1

Output Voltage R

L

=

10 kΩ to GND V

+

− 1.4 V+− 1.7 V+− 1.8 V min

Swing High V

+

=

36V (32V for LM611C) V

+

− 1.6 V+− 1.9 V+− 1.9 V min

V

O2

Output Voltage R

L

=

10 kΩ to V

+

V−+ 0.8 V−+ 0.9 V−+ 0.95 V max

Swing Low V

+

=

36V (32V for LM611C) V

−

+ 0.9 V−+ 1.0 V−+ 1.0 V max

I

OUT

Output Source V

OUT

=

2.5V, V

+IN

=

0V, 25 20 16 mA min

Current V

−IN

=

−0.3V 15 13 13 mA min

I

SINK

Output Sink V

OUT

=

1.6V, V

+IN

=

0V, 17 14 13 mA min

Current V

−IN

=

0.3V 98 8mA min

I

SHORT

Short Circuit Current V

OUT

=

0V, V

+IN

=

3V, 30 50 50 mA max

V

−IN

=

2V, Source 40 60 60 mA max

V

OUT

=

5V, V

+IN

=

2V, 30 60 70 mA max

V

−IN

=

3V, Sink 32 80 90 mA max

VOLTAGE REFERENCE

V

R

Reference Voltage (Note 8) 1.244 1.2365 1.2191 V min

1.2515 1.2689 V max

(

±

0.6%)(

±

2.0%)

Average Temperature
Drift

(Note 9)

10 80 150

PPM/˚C

max

Hysteresis Hyst=(Vro' − Vro)/∆TJ(Note 10)

3.2 µV/˚C

VRChange V

R(100 µA)−VR(17 µA)

0.05 1 1 mV max

with Current 0.1 1.1 1.1 mV max

V

R(10 mA)−VR(100 µA)

1.5 5 5 mV max

(Note 11) 2.0 5.5 5.5 mV max

R Resistance ∆V

R(10→0.1 mA)

/9.9 mA 0.2 0.56 0.56 Ω max

∆V

R(100→17 µA)

/83 µA 0.6 13 13 Ω max

VRChange with V

R(Vro=Vr)−VR(Vro=6.3V)

2.5 7 7 mV max

High V

RO

(5.06V between Anode and
FEEDBACK)

2.8 10 10 mV max

VRChange with V

R(V+=5V)−VR(V+=36V)

0.1 1.2 1.2 mV max

V

+

Change (V

+

=

32V for LM611C) 0.1 1.3 1.3 mV max

V

R(V+=5V)−VR(V+=3V)

0.01 1 1 mV max

0.01 1.5 1.5 mV max

www.national.com3

Electrical Characteristics (Continued)

These specifications apply for V

−

=

GND=0V, V

+

=

5V, V

CM

=

V

OUT

=

2.5V, I

R

=

100 µA, FEEDBACK pin shorted to GND,

unless otherwise specified. Limits in standard typeface are for T

J

=

25˚C; limits in boldface type apply over the Operating

Temperature Range.

LM611M

LM611AM LM611BI

Symbol Parameter Conditions Typical LM611AI LM611I Units

(Note 5) Limits LM611C

(Note 6) Limits

(Note 6)

VOLTAGE REFERENCE

VRChange with V

+

=

V

+

max, ∆V

R

=

V

R

V

ANODE

Change (@V

ANODE

=

V

−

=

GND) − V

R

0.7 1.5 1.6 mV max

(

@

V

ANODE

=

V

+

− 1.0V) 3.3 3.0 3.0 mV max

I

FB

FEEDBACK Bias IFB;V

ANODE

≤ VFB≤ 5.06V 22 35 50 nA max

Current 29 40 55 nA max

e

n

VRNoise 10 Hz to 10,000 Hz, V

RO

=

V

R

30 µV

RMS

Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the de­vice beyond its rated operating conditions.

Note 2: More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below
V

−

, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rating. Operation is undefined

and unpredictable when any parasitic diode or transistor is conducting.
Note 3: Junction temperature may be calculated using T

J

=

T

A+PDθJA

. The given thermal resistance is worst-case for packages in sockets in still air. For packages

soldered to copper-clad board with dissipation from one op amp or reference output transistor, nominal θ

JA

is 90˚C/W for the N package and 135˚C/W for the M pack-

age.

Note 4: Human body model, 100 pF discharged through a 1.5 kΩ resistor.
Note 5: Typical values in standard typeface are for T

J

=

25˚C; values in boldface type apply for the full operating temperature range. These values represent the

most likely parametric norm.

Note 6: All limits are guaranteed at room temperature (standard type face) or at operating temperature extremes (bold face type).
Note 7: Slew rate is measured with op amp in a voltage follower configuration. For rising slew rate, the input voltage is driven from 5V to 25V,and the output voltage

transition is sampled at 10V and 20V. For falling slew rate, the input voltage is driven from 25V to 5V, and output voltage transition is sampled at 20V and 10V.
Note 8: V

R

is the cathode-feedback voltage, nominally 1.244V.

Note 9: Average reference drift is calculated from the measurement of the reference voltage at 25˚C and at the temperature extremes. The drift, in ppm/˚C, is
10

6

•

∆VR/(V

R[25˚C]

•

∆TJ), where ∆VRis the lowest value subtracted from the highest, V

R[25˚C]

is the value at 25˚C, and ∆TJis the temperature range. This parameter

is guaranteed by design and sample testing.
Note 10: Hysteresis is the change in V

R

caused by a change in TJ, after the reference has been “dehysterized”. To dehysterize the reference; that is minimize the

hysteresis to the typical value, its junction temperature should be cycled in the following pattern, spiraling in toward 25˚C: 25˚C, 85˚C, −40˚C, 70˚C, 0˚C, 25˚C.

Note 11: Low contact resistance is required for accurate measurement.
Note 12: Military RETS 611AMX electrical test specification is available on request. The LM611AMJ/883 can also be procured as a Standard Military Drawing.

Simplified Schematic Diagrams

Op Amp

DS009221-3

www.national.com 4

Simplified Schematic Diagrams (Continued)

Typical Performance Characteristics (Reference) T

J

=

25˚C, FEEDBACK pin shorted to V

−

=

0V, unless otherwise noted

Reference

DS009221-91

Bias

DS009221-92

Reference Voltage vs Temp
on 5 Representative Units

DS009221-33

Reference Voltage Drift

DS009221-34

Accelerated Reference
Voltage Drift vs Time

DS009221-35

Reference Voltage vs
Current and Temperature

DS009221-36

Reference Voltage vs
Current and Temperature

DS009221-37

Reference Voltage vs
Reference Current

DS009221-38

www.national.com5

Typical Performance Characteristics (Reference) T

J

=

25˚C, FEEDBACK pin shorted to V

−

=

0V, unless otherwise noted (Continued)

Reference Voltage vs
Reference Current

DS009221-39

Reference AC
Stability Range

DS009221-40

Feedback Current vs
Feedback-to-Anode Voltage

DS009221-41

Feedback Current vs
Feedback-to-Anode Voltage

DS009221-42

Reference Noise Voltage
vs Frequency

DS009221-43

Reference Small-Signal
Resistance vs Frequency

DS009221-44

Reference Power-Up Time

DS009221-45

Reference Voltage with
Feedback Voltage Step

DS009221-46

Reference Voltage with
100

z

12 µA Current Step

DS009221-47

www.national.com 6

Typical Performance Characteristics (Reference) T

J

=

25˚C, FEEDBACK pin shorted to V

−

=

0V, unless otherwise noted (Continued)

Typical Performance Characteristics (Op Amps) V

+

=

5V, V

−

=

GND=0V, V

CM

=

V

+

/2, V

OUT

=

V

+

/2, T

J

=

25˚C, unless otherwise noted

Reference Step Response
for 100 µA

z

10 mA

Current Step

DS009221-48

Reference Voltage Change
with Supply Voltage Step

DS009221-49

Input Common-Mode Voltage
Range vs Temperature

DS009221-50

VOSvs Junction
Temperature

DS009221-51

Input Bias Current vs
Common-Mode Voltage

DS009221-52

Reference Change vs
Common-Mode Voltage

DS009221-53

Large-Signal
Step Response

DS009221-54

Output Voltage Swing
vs Temp. and Current

DS009221-55

www.national.com7

Typical Performance Characteristics (Op Amps) V

+

=

5V, V

−

=

GND=0V, V

CM

=

V

+

/2,

V

OUT

=

V

+

/2, T

J

=

25˚C, unless otherwise noted (Continued)

Output Source Current vs
Output Voltage and Temp.

DS009221-56

Output Sink Current vs
Output Voltage

DS009221-57

Output Swing,
Large Signal

DS009221-58

Output Impedance vs
Frequency and Gain

DS009221-59

Small Signal Pulse
Response vs Temp.

DS009221-60

Small-Signal Pulse
Response vs Load

DS009221-61

Op Amp Voltage Noise
vs Frequency

DS009221-62

Op Amp Current Noise
vs Frequency

DS009221-63

Small-Signal Voltage Gain vs
Frequency and Temperature

DS009221-64

www.national.com 8

Typical Performance Characteristics (Op Amps) V

+

=

5V, V

−

=

GND=0V, V

CM

=

V

+

/2,

V

OUT

=

V

+

/2, T

J

=

25˚C, unless otherwise noted (Continued)

Small-Signal Voltage Gain
vs Frequency and Load

DS009221-65

Follower Small-Signal
Frequency Response

DS009221-66

Common-Mode Input
Voltage Rejection Ratio

DS009221-67

Power Supply Current vs
Power Supply Voltage

DS009221-68

Positive Power Supply
Voltage Rejection Ratio

DS009221-69

Negative Power Supply
Voltage Rejection Ratio

DS009221-70

Slew Rate vs Temperature

DS009221-71

Input Offset Current vs
Junction Temperature

DS009221-72

Input Bias Current vs
Junction Temperature

DS009221-73

www.national.com9

Typical Performance Distributions

Application Information

VOLTAGE REFERENCE

Reference Biasing

The voltage reference is of a shunt regulator topology that
models as a simple zener diode. With current I

r

flowing in the
‘forward’ direction there is the familiar diode transfer func­tion. I

r

flowing in the reverse direction forces the reference
voltage to be developed from cathode to anode. The applied
voltage to the cathode may range from a diode drop below
V

−

to the reference voltage or to the avalanche voltage of the
parallel protection diode, nominally 7V.A 6.3V reference with
V+=3V is allowed.

Average V

OS

Drift

Military Temperature Range

DS009221-74

Average VOSDrift
Industrial Temperature Range

DS009221-75

Average VOSDrift
Commercial Temperature
Range

DS009221-76

Average IOSDrift
Military Temperature Range

DS009221-77

Average IOSDrift
Industrial Temperature Range

DS009221-78

Average IOSDrift
Commercial Temperature Range

DS009221-79

Voltage Reference Broad-Band
Noise Distribution

DS009221-80

Op Amp Voltage
Noise Distribution

DS009221-81

Op Amp Current
Noise Distribution

DS009221-82

DS009221-14

FIGURE 1. Voltages Associated with Reference

(Current Source I

r

is External)

www.national.com 10

Application Information (Continued)

The reference equivalent circuit reveals how V

r

is held at the
constant 1.2V by feedback, and how the FEEDBACK pin
passes little current.

To generate the required reverse current, typically a resistor
is connected from a supply voltage higher than the reference
voltage. Varyingthat voltage, and so varying I

r

, has small ef­fect with the equivalent series resistance of less than an ohm
at the higher currents.Alternatively,an active current source,
such as the LM134 series, may generate I

r

.

Capacitors in parallel with the reference are allowed. See the
Reference AC Stability Range curve for capacitance
values—from 20 µA to 3 mA any capacitor value is stable.
With the reference’s wide stability range with resistive and
capacitive loads, a wide range of RC filter values will perform
noise filtering.

Adjustable Reference

The FEEDBACK pin allows the reference output voltage,
V

ro

, to vary from 1.24V to 6.3V. The reference attempts to

hold V

r

at 1.24V.If Vris above 1.24V, the reference will con­duct current from Cathode to Anode; FEEDBACK current al­ways remains low. If FEEDBACK is connected to Anode,
then V

ro

=

V

r

=

1.24V. For higher voltages FEEDBACK is

held at a constant voltage above Anode— say 3.76V for V

ro

=

5V.Connectinga resistor across the constant V

r

generates

a current I=R1/V

r

flowing from Cathode into FEEDBACK
node.AThevenin equivalent 3.76V is generated from FEED­BACK to Anode with R2=3.76/I. Keep I greater than one
thousand times larger than FEEDBACK bias current for

<

0.1%error—I≥32 µA for the military grade over the military
temperature range (I≥5.5 µA for a 1%untrimmed error for a
commercial part.)

R1=Vr/I=1.24/32µ=39k
R2=R1 {(Vro/Vr) − 1}=39k {(5/1.24) − 1)}=118k

Understanding that V

r

is fixed and that voltage sources, re­sistors, and capacitors may be tied to the FEEDBACK pin, a
range of V

r

temperature coefficients may be synthesized.

DS009221-15

FIGURE 2. Reference Equivalent Circuit

DS009221-16

FIGURE 3. 1.2V Reference

DS009221-17

FIGURE 4. Thevenin Equivalent of

Reference with 5V Output

DS009221-18

FIGURE 5. Resistors R1 and R2 Program

Reference Output Voltage to be 5V

DS009221-19

FIGURE 6. Output Voltage has Negative Temperature

Coefficient (TC) if R2 has Negative TC

DS009221-20

FIGURE 7. Output Voltage has Positive TC

if R1 has Negative TC

www.national.com11

Application Information (Continued)

Connecting a resistor across Cathode-to-FEEDBACK cre­ates a 0 TC current source, but a range of TCs may be syn­thesized.

I=Vr/R1=1.24/R1

Hysteresis

The reference voltage depends, slightly, on the thermal his­tory of the die. Competitive micro-power products
vary—always check the data sheet for any given device. Do
not assume that no specification means no hysteresis.

OPERATIONAL AMPLIFIER

The amp or the reference may be biased in any way with no
effect on the other, except when a substrate diode conducts
(see Guaranteed Electrical Characteristics Note 1). The amp
may have inputs outside the common-mode range, may be
operated as a comparator, or have all terminals floating with
no effect on the reference (tying inverting input to output and
non-inverting input to V

−

on unused amp is preferred).
Choosing operating points that cause oscillation, such as
driving too large a capacitive load, is best avoided.

Op Amp Output Stage

The op amp, like the LM124 series, has a flexible and rela­tively wide-swing output stage. There are simple rules to op­timize output swing, reduce cross-over distortion, and opti­mize capacitive drive capability:

1. Output Swing: Unloaded, the 42 µA pull-down will bring

the output within 300 mV of V

−

over the military tempera­ture range. If more than 42 µA is required, a resistor from
output to V

−

will help. Swing across any load may be im-

proved slightly if the load can be tied to V

+

, at the cost of

poorer sinking open-loop voltage gain.

2. Cross-over Distortion: The LM611 has lower cross-over
distortion (a 1 V

BE

deadband versus 3 VBEfor the
LM124), and increased slew rate as shown in the char­acteristic curves. A resistor pull-up or pull-down will force
class-A operation with only the PNP or NPN output tran­sistor conducting, eliminating cross-over distortion.

3. Capacitive Drive: Limited by the output pole caused by
the output resistance driving capacitive loads, a
pull-down resistor conducting 1 mA or more reduces the
output stage NPN r

e

until the output resistance is that of
the current limit 25Ω. 200 pF may then be driven without
oscillation.

Op Amp Input Stage

The lateral PNP input transistors, unlike those of most op
amps, have BV

EBO

equal to the absolute maximum supply
voltage.Also, they have no diode clamps to the positive sup­ply nor across the inputs. These features make the inputs
look like high impedances to input sources producing large
differential and common-mode voltages.

DS009221-21

FIGURE 8. Diode in Series with R1 Causes

Voltage Across R1 and R2 to be Proportional

to Absolute Temperature (PTAT)

DS009221-22

FIGURE 9. Current Source is Programmed by R1

DS009221-23

FIGURE 10. Proportional-to-Absolute-

Temperature Current Source

DS009221-24

FIGURE 11. Negative −TC Current Source

www.national.com 12

Typical Applications

DS009221-28

*10k must be low
t.c. trim pot.

FIGURE 12. Ultra Low Noise 10.00V Reference.

Total Output Noise is Typically 14 µV

RMS

.

Adjust the 10k pot for 10.000V.

DS009221-30

FIGURE 13. Simple Low Quiescent Drain Voltage
Regulator. Total Supply Current is approximately

320 µA when V

IN

=

5V, and output has no load.

DS009221-29

V

OUT

=

(R1/R2 + 1) V

REF

.
R1, R2 should be 1%metal film.
R3 should be low t.c. trim pot.

FIGURE 14. Slow Rise-Time Upon Power-Up,

Adjustable Transducer Bridge Driver.

Rise-time is approximately 0.5 ms.

DS009221-31

FIGURE 15. Low Drop-Out Voltage Regulator Circuit. Drop out voltage is typically 0.2V.

www.national.com13

Typical Applications (Continued)

DS009221-32

FIGURE 16. Nulling Bridge Detection System. Adjust sensitivity via 400 kΩ pot.

Null offset with R1, and bridge drive with the 10k pot.

www.national.com 14

Ordering Information

Reference

Tolerance & V

OS

Temperature Range Package NSC

Drawing

Military Industrial Commercial

−55˚C≤T

A

≤+125˚C −40˚C≤TA≤+85˚C 0˚C≤TA≤+70˚C

±

0.6

%

@

LM611AMN LM611AIN — 8-pin N08E
80 ppm/˚C max molded DIP
V

OS

=

3.5 mV max LM611AMJ/883 (Note 12) — — 8-pin J08A
ceramic DIP

±

2.0

%

@

LM611MN LM611BIN LM611CN 8-pin N08E
150 ppm/˚C max molded DIP
V

OS

=

5 mV max — LM611IM LM611CM 14-pin Narrow M14A

Surface Mount

www.national.com15

Physical Dimensions inches (millimeters) unless otherwise noted

Hermetic Dual-In-Line Package (J)

Order Number LM611AMJ/883

NS Package Number J08A

Plastic Surface Mount Narrow Package (0.15) (M)

Order Number LM611CM or LM611IM

NS Package Number M14A

www.national.com 16

Physical Dimensions inches (millimeters) unless otherwise noted (Continued)

LIFE SUPPORT POLICY

NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and
whose failure to perform when properly used in
accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a
significant injury to the user.

2. A critical component is any component of a life
support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.

National Semiconductor
Corporation

Americas
Tel: [phone]
Fax: [phone]
Email: [e-mail]

National Semiconductor
Europe

Fax: [phone]

Email: [e-mail]
Deutsch Tel: [phone]
English Tel: [phone]
Français Tel: [phone]
Italiano Tel: [phone]

National Semiconductor
Asia Pacific Customer
Response Group

Tel: [phone]
Fax: [phone]
Email: [e-mail]

National Semiconductor
Japan Ltd.

Tel: [phone]
Fax: [phone]

www.national.com

Plastic Dual-In-Line Package (N)

Order Number LM611CN, LM611AIN, LM611BIN, LM611AMN or LM611MN

NS Package Number N08E

LM611 Operational Amplifier and Adjustable Reference

National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.