Datasheet LM611AIN Datasheet (NSC)

Page 1

LM611 Operational Amplifier and Adjustable Reference

August 2000

General Description

The LM611 consists of a single-supply op-amp and a programmable voltage reference in one space saving 8-pin package. The op-amp out-performs most single-supply op-amps by providing higher speed and bandwidth along with low supply current. This device was specifically designed to lower cost and board space requirements in transducer, test, measurement and data acquisition systems.

Combining a stable voltage reference with a wide output swing op-amp makes the LM611 ideal for single supply transducers, signal conditioning and bridge driving where large common-modesignalsare common. The voltage reference consists of a reliable band-gap design that maintains low dynamic output impedance (1Ω typical), excellent initial tolerance (0.6%), and the ability to be programmed from

1.2V to 6.3V via two external resistors. The voltage reference is very stable even when driving large capacitive loads, as are commonly encountered in CMOS data acquisition systems.

As a member of National’s Super-Block is a space-saving monolithic alternative to a multi-chip solution, offering a high level of integration without sacrificing performance.

™

family, the LM611

Connection Diagrams

Features

OP AMP

n Low operating current: 300 µA (op amp) n Wide supply voltage range: 4V to 36V n Wide common-mode range: V n Wide differential input voltage: n Available in low cost 8-pin DIP n Available in plastic package rated for Military

Temperature Range Operation

REFERENCE

n Adjustable output voltage: 1.2V to 6.3V n Tight initial tolerance available: n Wide operating current range: 17 µA to 20 mA n Reference floats above ground n Tolerant of load capacitance

−

to (V+−1.8V)

36V

0.6%

Applications

n Transducer bridge driver n Process and Mass Flow Control systems n Power supply voltage monitor n Buffered voltage references for A/D’s

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Super-Block™is a trademark of National Semiconductor Corporation.

Page 2

Absolute Maximum Ratings (Note 1)

LM611

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.

Voltage on Any Pins Except V

(referred to V−pin) 36V (Max) (Note 2) −0.3V (Min)

Thermal Resistance, Junction-to-Ambient (Note 3)

N Package 100˚C/W M Package 150˚C/W

Soldering Information Soldering (10 seconds)

N Package 260˚C M Package 220˚C

ESD Tolerance (Note 4)

Current through Any Input Pin and

Differential Input Voltage

Military and Industrial Commercial

Storage Temperature Range −65˚C≤T

20 mA

36V

32V

≤+150˚C

Operating Temperature Range

LM611AI, LM611I, LM611BI −40˚C≤TJ≤+85˚C LM611AM, LM611M −55˚C≤T LM611C 0˚C≤T

Maximum Junction Temperature 150˚C

Electrical Characteristics

These specifications apply for V−= GND = 0V, V+= 5V, VCM=V unless otherwise specified. Limits in standard typeface are for TJ= 25˚C; limits in boldface type apply over the Operating

Temperature Range.

Symbol Parameter Conditions Typical LM611AI LM611I Units

Total Supply Current R

Supply Voltage Range 2.2 2.8 2.8 V min

=∞, 210 300 350 µA max

LOAD

4V ≤ V

≤ 36V (32V for LM611C) 221 320 370 µA max

OPERATIONAL AMPLIFIER

OS1

OS2

VOSOver Supply 4V ≤ V+≤ 36V 1.5 3.5 5.0 mV max

VOSOver V

(4V ≤ V VCM= 0V through VCM= 1.0 3.5 5.0 mV max

≤ 32V for LM611C) 2.0 6.0 7.0 mV max

− 1.8V), V+= 30V, V−=0V 1.5 6.0 7.0 mV max

Average VOSDrift (Note 6)

Input Bias Current 10 25 35 nA max

Input Offset Current 0.2 4 4 nA max

Average Offset Drift Current

= 2.5V, IR= 100 µA, FEEDBACK pin shorted to GND,

OUT

LM611M

LM611AM LM611BI

(Note 5) Limits LM611C

(Note 6) Limits

(Note 6)

2.9 3 3 V min 46 36 32 V max

43 36 32 V max

11 30 40 nA max

0.3 5 5 nA max

4 pA/˚C

1kV

≤+125˚C

≤70˚C

µV/˚C

max

Input Resistance Differential 1800 MΩ

Common-Mode 3800 MΩ

Input Capacitance Common-Mode 5.7 pF Voltage Noise f = 100 Hz,

Input Referred

Current Noise f = 100 Hz,

Input Referred

CMRR Common-Mode V+= 30V, 0V ≤ VCM≤ (V+− 1.8V) 95 80 75 dB min

Rejection-Ratio CMRR = 20 log (∆V

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/∆VOS) 90 75 70 dB min

Page 3

Electrical Characteristics (Continued)

These specifications apply for V−= GND = 0V, V+= 5V, VCM=V unless otherwise specified. Limits in standard typeface are for TJ= 25˚C; limits in boldface type apply over the Operating

Temperature Range.

Symbol Parameter Conditions Typical LM611AI LM611I Units

OPERATIONAL AMPLIFIER

PSRR Power Supply 4V ≤ V

Rejection-Ratio PSRR = 20 log (∆V

Open Loop RL=10kΩto GND, V+= 30V, 500 100 94 V/mV Voltage Gain 5V ≤ V

SR Slew Rate V

GBW Gain Bandwidth C

Output Voltage RL=10kΩto GND V+− 1.4 V+− 1.7 V+− 1.8 V min Swing High V

Output Voltage RL=10kΩto V Swing Low V

OUT

Output Source V Current V

SINK

Output Sink V Current V

SHORT

Short Circuit Current V

≤ 30V, VCM=V+/2, 110 80 75 dB min

≤ 25V 50 40 40 min

OUT

= 30V (Note 7) 0.70 0.55 0.50 V/µs

= 50 pF 0.80 MHz

= 36V (32V for LM611C) V+− 1.6 V+− 1.9 V+− 1.9 V min

= 36V (32V for LM611C) V−+ 0.9 V−+ 1.0 V−+ 1.0 V max

= 2.5V, V

OUT

= −0.3V 15 13 13 mA min

−IN

= 1.6V, V

OUT

= 0.3V 98 8mA min

−IN

= 0V, V

OUT

= 2V, Source 40 60 60 mA max

−IN

= 5V, V

OUT

= 3V, Sink 32 80 90 mA max

−IN

/∆VOS) 100 75 70 dB min

= 0V, 25 20 16 mA min

+IN

= 0V, 17 14 13 mA min

+IN

= 3V, 30 50 50 mA max

+IN

= 2V, 30 60 70 mA max

+IN

VOLTAGE REFERENCE

Reference Voltage (Note 8) 1.244 1.2365 1.2191 V min

Average Temperature

(Note 9)

Drift

= 2.5V, IR= 100 µA, FEEDBACK pin shorted to GND,

OUT

LM611M

LM611AM LM611BI

(Note 5) Limits LM611C

(Note 6) Limits

(Note 6)

0.65 0.45 0.45

0.50

V−+ 0.8 V−+ 0.9 V−+ 0.95 V max

1.2515 1.2689 V max

(

0.6%) (±2.0%)

10 80 150

PPM/˚C

LM611

max

Hysteresis Hyst = (Vro' − Vro)/∆TJ(Note 10)

VRChange V with Current 0.1 1.1 1.1 mV max

V (Note 11) 2.0 5.5 5.5 mV max

R Resistance ∆V

∆V VRChange with V High V

(5.06V between Anode and

FEEDBACK) VRChange with V

Change (V+= 32V for LM611C) 0.1 1.3 1.3 mV max

R(100 µA)−VR(17 µA)

R(10 mA)−VR(100 µA)

R(10→0.1 mA) R(100→17 µA)

R(Vro = Vr)−VR(Vro = 6.3V)

R(V+ = 5V)−VR(V+ = 36V)

R(V+ = 5V)−VR(V+ = 3V)

/9.9 mA 0.2 0.56 0.56 Ω max /83 µA 0.6 13 13 Ω max

3.2 µV/˚C

0.05 1 1 mV max

1.5 5 5 mV max

2.5 7 7 mV max

2.8 10 10 mV max

0.1 1.2 1.2 mV max

0.01 1 1 mV max

0.01 1.5 1.5 mV max

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Page 4

Electrical Characteristics (Continued)

LM611

These specifications apply for V−= GND = 0V, V+= 5V, VCM=V unless otherwise specified. Limits in standard typeface are for TJ= 25˚C; limits in boldface type apply over the Operating

Temperature Range.

Symbol Parameter Conditions Typical LM611AI LM611I Units

VOLTAGE REFERENCE

VRChange with V+=V+max, ∆VR=V V

FEEDBACK Bias IFB;V

Change (@V

ANODE

=V−= GND) − V

ANODE

(

=V+− 1.0V) 3.3 3.0 3.0 mV max

ANODE

≤ VFB≤ 5.06V 22 35 50 nA max

ANODE

Current 29 40 55 nA max

Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the device beyond its rated operating conditions.

Note 2: More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below

−

, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rating. Operation is undefined

and unpredictable when any parasitic diode or transistor is conducting. Note 3: Junction temperature may be calculated using T

soldered to copper-clad board with dissipation from one op amp or reference output transistor, nominal θ age.

Note 4: Human body model, 100 pF discharged through a 1.5 kΩ resistor. Note 5: Typical values in standard typeface are for T

most likely parametric norm.

Note 6: All limits are guaranteed at room temperature (standard type face) or at operating temperature extremes (bold face type). Note 7: Slew rate is measured with op amp in a voltage follower configuration. For rising slew rate, the input voltage is driven from 5V to 25V,and the output voltage

transition is sampled at 10V and 20V. For falling slew rate, the input voltage is driven from 25V to 5V, and output voltage transition is sampled at 20V and 10V.

Note 8: V Note 9: Average reference drift is calculated from the measurement of the reference voltage at 25˚C and at the temperature extremes. The drift, in ppm/˚C, is

∆VR/(V

•

is guaranteed by design and sample testing. Note 10: Hysteresis is the change in V

hysteresis to the typical value, its junction temperature should be cycled in the following pattern, spiraling in toward 25˚C: 25˚C, 85˚C, −40˚C, 70˚C, 0˚C, 25˚C.

Note 11: Low contact resistance is required for accurate measurement. Note 12: Military RETS 611AMX electrical test specification is available on request. The LM611AMJ/883 can also be procured as a Standard Military Drawing.

VRNoise 10 Hz to 10,000 Hz, VRO=V

J=TA+PDθJA

= 25˚C; values in boldface type apply for the full operating temperature range. These values represent the

is the cathode-feedback voltage, nominally 1.244V.

∆TJ), where ∆VRis the lowest value subtracted from the highest, V

•

R[25˚C]

caused by a change in TJ, after the reference has been “dehysterized”. To dehysterize the reference; that is minimize the

. The given thermal resistance is worst-case for packages in sockets in still air.For packages

= 2.5V, IR= 100 µA, FEEDBACK pin shorted to GND,

OUT

LM611M

LM611AM LM611BI

(Note 5) Limits LM611C

(Note 6) Limits

(Note 6)

R[25˚C]

0.7 1.5 1.6 mV max

30 µV

is 90˚C/W for the N package and 135˚C/W for the M pack-

is the value at 25˚C, and ∆TJis the temperature range. This parameter

RMS

Typical Performance Characteristics (Reference) T

0V, unless otherwise noted

Reference Voltage vs Temp on 5 Representative Units

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Reference Voltage Drift

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= 25˚C, FEEDBACK pin shorted to V−=

Accelerated Reference Voltage Drift vs Time

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Page 5

Typical Performance Characteristics (Reference) T

= 0V, unless otherwise noted (Continued)

= 25˚C, FEEDBACK pin shorted to V

LM611

−

Reference Voltage vs Current and Temperature

Reference Voltage vs Reference Current

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Reference Voltage vs Current and Temperature

Reference AC Stability Range

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Reference Voltage vs Reference Current

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Feedback Current vs Feedback-to-Anode Voltage

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Feedback Current vs Feedback-to-Anode Voltage

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Reference Noise Voltage vs Frequency

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Reference Small-Signal Resistance vs Frequency

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Typical Performance Characteristics (Reference) T

LM611

= 0V, unless otherwise noted (Continued)

= 25˚C, FEEDBACK pin shorted to V

−

Reference Power-Up Time

Reference Step Response for 100 µA ∼ 10 mA Current Step

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Reference Voltage with Feedback Voltage Step

Reference Voltage Change with Supply Voltage Step

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Reference Voltage with 100∼12 µA Current Step

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Typical Performance Characteristics (Op Amps) V

=V+/2, TJ= 25˚C, unless otherwise noted

Input Common-Mode Voltage Range vs Temperature

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VOSvs Junction Temperature

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=5V,V−=GND=0V,VCM=V+/2, V

Input Bias Current vs Common-Mode Voltage

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OUT

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Page 7

Typical Performance Characteristics (Op Amps) V

=V+/2, TJ= 25˚C, unless otherwise noted (Continued)

OUT

= 5V, V−= GND = 0V, VCM=V+/2,

LM611

Reference Change vs Common-Mode Voltage

Output Source Current vs Output Voltage and Temp.

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Large-Signal Step Response

Output Sink Current vs Output Voltage

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Output Voltage Swing vs Temp. and Current

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Output Swing, Large Signal

Output Impedance vs Frequency and Gain

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Small Signal Pulse Response vs Temp.

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Small-Signal Pulse Response vs Load

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Typical Performance Characteristics (Op Amps) V

LM611

=V+/2, TJ= 25˚C, unless otherwise noted (Continued)

OUT

= 5V, V−= GND = 0V, VCM=V+/2,

Op Amp Voltage Noise vs Frequency

Small-Signal Voltage Gain vs Frequency and Load

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Op Amp Current Noise vs Frequency

Follower Small-Signal Frequency Response

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Small-Signal Voltage Gain vs Frequency and Temperature

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Common-Mode Input Voltage Rejection Ratio

Power Supply Current vs Power Supply Voltage

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Positive Power Supply Voltage Rejection Ratio

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Negative Power Supply Voltage Rejection Ratio

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Typical Performance Characteristics (Op Amps) V

=V+/2, TJ= 25˚C, unless otherwise noted (Continued)

OUT

= 5V, V−= GND = 0V, VCM=V+/2,

LM611

Slew Rate vs Temperature

Input Offset Current vs Junction Temperature

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Typical Performance Distributions

Average VOSDrift Military Temperature Range

Average VOSDrift Industrial Temperature Range

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Input Bias Current vs Junction Temperature

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Average VOSDrift Commercial Temperature Range

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Average IOSDrift Military Temperature Range

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Average IOSDrift Industrial Temperature Range

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Average IOSDrift Commercial Temperature Range

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Typical Performance Distributions (Continued)

LM611

Voltage Reference Broad-Band Noise Distribution

Op Amp Voltage Noise Distribution

Op Amp Current Noise Distribution

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Application Information

VOLTAGE REFERENCE

Reference Biasing

The voltage reference is of a shunt regulator topology that models as a simple zener diode. With current I ‘forward’ direction there is the familiar diode transfer function. I

flowing in the reverse direction forces the reference

voltage to be developed from cathode to anode. The applied voltage to the cathode may range from a diode drop below

−

to the reference voltage or to the avalanche voltage of the parallel protection diode, nominally 7V.A 6.3V reference with V+ = 3V is allowed.

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FIGURE 1. Voltages Associated with Reference

(Current Source I

is External)

The reference equivalent circuit reveals how V constant 1.2V by feedback, and how the FEEDBACK pin passes little current.

To generate the required reverse current, typically a resistor is connected from a supply voltage higher than the reference voltage. Varying that voltage, and so varying I fect with the equivalent series resistance of less than an ohm at the higher currents.Alternatively,an active current source, such as the LM134 series, may generate I

flowing in the

is held at the

, has small ef-

DS009221-81

DS009221-15

DS009221-82

FIGURE 2. Reference Equivalent Circuit

DS009221-16

FIGURE 3. 1.2V Reference

Capacitors in parallel with the reference are allowed. See the Reference AC Stability Range curve for capacitance values—from 20 µA to 3 mA any capacitor value is stable. With the reference’s wide stability range with resistive and capacitive loads, a wide range of RC filter values will perform noise filtering.

Adjustable Reference

The FEEDBACK pin allows the reference output voltage, V

, to vary from 1.24V to 6.3V. The reference attempts to

hold V

at 1.24V. If Vris above 1.24V, the reference will con-

duct current from Cathode to Anode; FEEDBACK current always remains low. If FEEDBACK is connected to Anode, then V

= 1.24V. For higher voltages FEEDBACK is

ro=Vr

held at a constant voltage above Anode—say 3.76V for V = 5V. Connectinga resistor across the constant Vrgenerates a current I=R1/V

flowing from Cathode into FEEDBACK

node.AThevenin equivalent 3.76V is generated from FEEDBACK to Anode with R2=3.76/I. Keep I greater than one thousand times larger than FEEDBACK bias current for

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Page 11

Application Information (Continued)

0.1% error —I≥32 µAfor the military grade over the military temperature range (I≥5.5 µA for a 1% untrimmed error for a commercial part.)

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FIGURE 4. Thevenin Equivalent of

Reference with 5V Output

LM611

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FIGURE 7. Output Voltage has Positive TC

if R1 has Negative TC

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R1 = Vr/I = 1.24/32µ = 39k R2 = R1 {(Vro/Vr) − 1} = 39k {(5/1.24) − 1)} = 118k

FIGURE 5. Resistors R1 and R2 Program

Reference Output Voltage to be 5V

Understanding that V

is fixed and that voltage sources, re-

sistors, and capacitors may be tied to the FEEDBACK pin, a range of V

temperature coefficients may be synthesized.

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FIGURE 6. Output Voltage has Negative Temperature

Coefficient (TC) if R2 has Negative TC

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FIGURE 8. Diode in Series with R1 Causes

Voltage Across R1 and R2 to be Proportional

to Absolute Temperature (PTAT)

Connecting a resistor across Cathode-to-FEEDBACK creates a 0 TC current source, but a range of TCs may be synthesized.

DS009221-22

I = Vr/R1 = 1.24/R1

FIGURE 9. Current Source is Programmed by R1

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Application Information (Continued)

LM611

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FIGURE 10. Proportional-to-Absolute-

Temperature Current Source

DS009221-24

FIGURE 11. Negative −TC Current Source

proved slightly if the load can be tied to V

, at the cost of

poorer sinking open-loop voltage gain.

2. Cross-over Distortion: The LM611 has lower cross-over distortion (a 1 V

deadband versus 3 VBEfor the

LM124), and increased slew rate as shown in the characteristic curves. Aresistor pull-up or pull-down will force class-A operation with only the PNP or NPN output transistor conducting, eliminating cross-over distortion.

3. Capacitive Drive: Limited by the output pole caused by the output resistance driving capacitive loads, a pull-down resistor conducting 1 mA or more reduces the output stage NPN r

until the output resistance is that of

the current limit 25Ω. 200 pF may then be driven without oscillation.

Op Amp Input Stage

The lateral PNP input transistors, unlike those of most op amps, have BV

equal to the absolute maximum supply

EBO

voltage.Also, they have no diode clamps to the positive supply nor across the inputs. These features make the inputs look like high impedances to input sources producing large differential and common-mode voltages.

Typical Applications

Hysteresis

The reference voltage depends, slightly, on the thermal history of the die. Competitive micro-power products vary—always check the data sheet for any given device. Do not assume that no specification means no hysteresis.

OPERATIONAL AMPLIFIER

The amp or the reference may be biased in any way with no effect on the other, except when a substrate diode conducts (see Guaranteed Electrical Characteristics Note 1). The amp may have inputs outside the common-mode range, may be operated as a comparator, or have all terminals floating with no effect on the reference (tying inverting input to output and non-inverting input to V

−

on unused amp is preferred). Choosing operating points that cause oscillation, such as driving too large a capacitive load, is best avoided.

Op Amp Output Stage

The op amp, like the LM124 series, has a flexible and relatively wide-swing output stage. There are simple rules to optimize output swing, reduce cross-over distortion, and optimize capacitive drive capability:

1. Output Swing: Unloaded, the 42 µA pull-down will bring

the output within 300 mV of V ture range. If more than 42 µA is required, a resistor from output to V

−

will help. Swing across any load may be im-

−

over the military tempera-

*10k must be low t.c. trim pot.

FIGURE 12. Ultra Low Noise 10.00V Reference.

Total Output Noise is Typically 14 µV

Adjust the 10k pot for 10.000V.

FIGURE 13. Simple Low Quiescent Drain Voltage Regulator. Total Supply Current is approximately

320 µA when V

= 5V, and output has no load.

RMS

DS009221-28

DS009221-30

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Typical Applications (Continued)

= (R1/R2 + 1) V

OUT

R1, R2 should be 1% metal film. R3 should be low t.c. trim pot.

REF

FIGURE 14. Slow Rise-Time Upon Power-Up,

Adjustable Transducer Bridge Driver.

Rise-time is approximately 0.5 ms.

LM611

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DS009221-31

FIGURE 15. Low Drop-Out Voltage Regulator Circuit. Drop out voltage is typically 0.2V.

DS009221-32

FIGURE 16. Nulling Bridge Detection System. Adjust sensitivity via 400 kΩ pot.

Null offset with R1, and bridge drive with the 10k pot.

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Simplified Schematic Diagrams

LM611

Op Amp

DS009221-3

Reference

Ordering Information

Reference

Tolerance & V

0.6%

80 ppm/˚C max

= 3.5 mV max

2.0%

150 ppm/˚C max

= 5 mV max

−55˚C≤T

LM611AMJ/883 (Note 12) — — 8-pin

Bias

DS009221-91

Temperature Range Package NSC

Military Industrial Commercial

≤+125˚C −40˚C≤TA≤+85˚C 0˚C≤TA≤+70˚C

— LM611IM

LM611IMX

LM611CM

LM611CMX

DS009221-92

ceramic DIP

14-pin Narrow

Surface Mount

Drawing

J08A

M14A

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Physical Dimensions inches (millimeters) unless otherwise noted

LM611

Hermetic Dual-In-Line Package (J)

Order Number LM611AMJ/883

NS Package Number J08A

Plastic Surface Mount Narrow Package (0.15) (M)

Order Number LM611CM, LM611CMX, LM611IM or LM611IMX

NS Package Number M14A

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Notes

LM611 Operational Amplifier and Adjustable Reference

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NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:

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Americas Tel: 1-800-272-9959 Fax: 1-800-737-7018 Email: support@nsc.com

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Email: europe.support@nsc.com Deutsch Tel: +49 (0) 69 9508 6208 English Tel: +44 (0) 870 24 0 2171 Français Tel: +33 (0) 1 41 91 8790

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Tel: 81-3-5639-7560 Fax: 81-3-5639-7507

National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.