Datasheet LM4250CN, LM4250CMX, LM4250CMWC, LM4250CM, LM4250CH Datasheet (NSC)

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Page 1
LM4250 Programmable Operational Amplifier
General Description
The LM4250 and LM4250C are extremely versatile program­mable monolithic operational amplifiers. A single external master bias current setting resistor programs the input bias current, input offset current, quiescent power consumption, slew rate, input noise, and the gain-bandwidth product. The device is a truly general purpose operational amplifier.
The LM4250C is identical to the LM4250 except that the LM4250C has its performance guaranteed over a 0˚C to +70˚C temperature range instead of the −55˚C to +125˚C temperature range of the LM4250.
Features
n
±
1V to±18V power supply operation
n 3 nA input offset current n Standby power consumption as low as 500 nW n No frequency compensation required n Programmable electrical characteristics n Offset voltage nulling capability n Can be powered by two flashlight batteries n Short circuit protection
Connection Diagrams
Ordering Information
Temperature Range Package NSC
Military Commercial Package
−55˚C T
A
+125˚C 0˚C TA≤ +70˚C Number
LM4250CN 8-Pin N08E
Molded DIP
LM4250CM 8-Pin M08A
Surface Mount
LM4250J 8-Pin J08E
LM4250J-MIL Ceramic DIP
LM4250H LM4250CH 8-Pin H08C
LM4250H-MIL Metal Can
Metal Can Package
DS009300-2
Top View
Dual-In-Line Package
DS009300-5
Top View
May 1998
LM4250 Programmable Operational Amplifier
© 1999 National Semiconductor Corporation DS009300 www.national.com
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
(Note 3)
LM4250 LM4250C
Supply Voltage
±
18V
±
18V
Operating Temp. Range −55˚C T
A
+125˚C 0˚C TA≤ +70˚C
Differential Input Voltage
±
30V
±
30V
Input Voltage (Note 2)
±
15V
±
15V
I
SET
Current 150 nA 150 nA Output Short Circuit Duration Continuous Continuous T
JMAX
H-Package 150˚C 100˚C N-Package 100˚C J-Package 150˚C 100˚C M-Package 100˚C
Power Dissipation at T
A
=
25˚C
H-Package (Still Air) 500 mW 300 mW
(400 LF/Min Air Flow) 1200 mW 1200 mW N-Package 500 mW J-Package 1000 mW 600 mW M-Package 350 mW
Thermal Resistance (Typical) θ
JA
H-Package (Still Air) 165˚C/W 165˚C/W
(400 LF/Min Air Flow) 65˚C/W 65˚C/W N-Package 130˚C/W J-Package 108˚C/W 108˚C/W M-Package 190˚C/W (Typical) θ
JC
H-Package 21˚C/W 21˚C/W
Storage Temperature Range −65˚C to +150˚C −65˚C to +150˚C
Soldering Information
Dual-In-Line Package
Soldering (10 seconds) 260˚C
Small Outline Package
Vapor Phase (60 seconds) 215˚C Infrared (15 seconds) 220˚C
See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount devices.
ESD tolerance (Note 4) 800V
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditionsforwhichthe device is functional, but do not guarantee specific performance limits.
Note 2: For supply voltages less than
±
15V, the absolute maximum input
voltage is equal to the supply voltage.
Note 3: Refer to RETS4250X for military specifications. Note 4: Human body model, 1.5 kin series with 100 pF.
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Resistor Biasing
Set Current Setting Resistor to V
I
SET
V
S
0.1 µA 0.5 µA 1.0 µA 5 µA 10 µA
±
1.5V 25.6 M 5.04 M 2.5 M 492 k 244 k
±
3.0V 55.6 M 11.0 M 5.5 M 1.09 M 544 k
±
6.0V 116 M 23.0 M 11.5 M 2.29 M 1.14 M
±
9.0V 176 M 35.0 M 17.5 M 3.49 M 1.74 M
±
12.0V 236 M 47.0 M 23.5 M 4.69 M 2.34 M
±
15.0V 296 M 59.0 M 29.5 M 5.89 M 2.94 M
Electrical Characteristics
LM4250 (−55˚C TA≤ +125˚C unless otherwise specified.) T
A
=
T
J
V
S
=
±
1.5V
Parameter Conditions I
SET
=
1µA I
SET
=
10 µA
Min Max Min Max
V
OS
RS≤ 100 kΩ,T
A
=
25˚C 3 mV 5 mV
I
OS
T
A
=
25˚C 3 nA 10 nA
I
bias
T
A
=
25˚C 7.5 nA 50 nA
Large Signal Voltage R
L
=
100 k,T
A
=
25˚C 40k
Gain V
O
=
±
0.6V, R
L
=
10 k 50k
Supply Current T
A
=
25˚C 7.5 µA 80 µA
Power Consumption T
A
=
25˚C 23 µW 240 µW
V
OS
RS≤ 100 kΩ 4mV 6mV
I
OS
T
A
=
+125˚C 5 nA 10 nA
T
A
=
−55˚C 3 nA 10 nA
I
bias
7.5 nA 50 nA
Input Voltage Range
±
0.6V
±
0.6V
Large Signal Voltage Gain V
O
=
±
0.5V, R
L
=
100 k 30k
R
L
=
10 k 30k
Output Voltage Swing R
L
=
100 k
±
0.6V
R
L
=
10 k
±
0.6V
Common Mode Rejection Ratio R
S
10 k 70 dB 70 dB
Supply Voltage Rejection Ratio R
S
10 k 76 dB 76 dB
Supply Current 8µA 90µA
V
S
=
±
15V
Parameter Conditions I
SET
=
1µA I
SET
=
10 µA
Min Max Min Max
V
OS
RS≤ 100 kΩ,T
A
=
25˚C 3 mV 5 mV
I
OS
T
A
=
25˚C 3 nA 10 nA
I
bias
T
A
=
25˚C 7.5 nA 50 nA
Large Signal Voltage R
L
=
100 k,T
A
=
25˚C 100k
Gain V
O
=
±
10V, R
L
=
10 k 100k
Supply Current T
A
=
25˚C 10 µA 90 µA
Power Consumption T
A
=
25˚C 300 µW 2.7 mW
V
OS
RS≤ 100 kΩ 4mV 6mV
I
OS
T
A
=
+125˚C 25 nA 25 nA
T
A
=
−55˚C 3 nA 10 nA
I
bias
7.5 nA 50 nA
Input Voltage Range
±
13.5V
±
13.5V
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Electrical Characteristics (Continued)
V
S
=
±
15V
Parameter Conditions I
SET
=
1µA I
SET
=
10 µA
Min Max Min Max
Large Signal Voltage V
O
=
±
10V, R
L
=
100 k 50k
Gain R
L
=
10 k 50k
Output Voltage Swing R
L
=
100 k
±
12V
R
L
=
10 k
±
12V
Common Mode Rejection Ratio R
S
10 k 70 dB 70 dB
Supply Voltage Rejection Ratio R
S
10 k 76 dB 76 dB Supply Current 11 µA 100 µA Power Consumption 330 µW 3 mW
Electrical Characteristics
LM4250C (0˚C TA≤ +70˚C unless otherwise specified.) T
A
=
T
J
V
S
=
±
1.5V
Parameter Conditions I
SET
=
1µA I
SET
=
10 µA
Min Max Min Max
V
OS
RS≤ 100 kΩ,T
A
=
25˚C 5 mV 6 mV
I
OS
T
A
=
25˚C 6 nA 20 nA
I
bias
T
A
=
25˚C 10 nA 75 nA
Large Signal Voltage Gain R
L
=
100 k,T
A
=
25˚C 25k
V
O
=
±
0.6V, R
L
=
10 k 25k
Supply Current T
A
=
25˚C 8 µA 90 µA
Power Consumption T
A
=
25˚C 24 µW 270 µW
V
OS
RS≤ 10 kΩ 6.5 mV 7.5 mV
I
OS
8nA 25nA
I
bias
10 nA 80 nA
Input Voltage Range
±
0.6V
±
0.6V
Large Signal Voltage V
O
=
±
0.5V, R
L
=
100 k 25k
Gain R
L
=
10 k 25k
Output Voltage Swing R
L
=
100 k
±
0.6V
R
L
=
10 k
±
0.6V
Common Mode Rejection Ratio R
S
10 k 70 dB 70 dB
Supply Voltage Rejection Ratio R
S
10 k 74 dB 74 dB Supply Current 8µA 90µA Power Consumption 24 µW 270 µW
V
S
=
±
15V
Parameter Conditions I
SET
=
1µA I
SET
=
10 µA
Min Max Min Max
V
OS
RS≤ 100 kΩ,T
A
=
25˚C 5 mV 6 mV
I
OS
T
A
=
25˚C 6 nA 20 nA
I
bias
T
A
=
25˚C 10 nA 75 nA
Large Signal Voltage R
L
=
100 k,T
A
=
25˚C 60k
Gain V
O
=
±
10V, R
L
=
10 k 60k
Supply Current T
A
=
25˚C 11 µA 100 µA
Power Consumption T
A
=
25˚C 330 µW 3 mW
V
OS
RS≤ 100 kΩ 6.5 mV 7.5 mV
I
OS
8nA 25nA
I
bias
10 nA 80 nA
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Electrical Characteristics (Continued)
V
S
=
±
15V
Parameter Conditions I
SET
=
1µA I
SET
=
10 µA
Min Max Min Max
Input Voltage Range
±
13.5V
±
13.5V
Large Signal Voltage V
O
=
±
10V, R
L
=
100 k 50k
Gain R
L
=
10 k 50k
Output Voltage Swing R
L
=
100 k
±
12V
R
L
=
10 k
±
12V
Common Mode Rejection Ratio R
S
10 k 70 dB 70 dB
Supply Voltage Rejection Ratio R
S
10 k 74 dB 74 dB Supply Current 11 µA 100 µA Power Consumption 330 µW 3 mW
Typical Performance Characteristics
Input Bias Current vs I
SET
DS009300-15
Input Bias Current vs Temperature
DS009300-16
Input Offset Current vs Temperature
DS009300-17
Unnulled Input Offset Voltage Change vs I
SET
DS009300-18
Unnulled Input Offset Voltage Change vs Temperature
DS009300-19
Peak to Peak Output Voltage Swing vs Load Resistance
DS009300-20
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Typical Performance Characteristics (Continued)
Peak to Peak Output Voltage Swing vs Supply Voltage
DS009300-21
Quiescent Current (Iq)vs Temperature
DS009300-22
Quiescent Current (Iq)vsI
SET
DS009300-23
Slew Rate vs I
SET
DS009300-24
Gain Bandwidth Product vs I
SET
DS009300-25
Open Loop Voltage Gain vs I
SET
DS009300-26
Phase Margin vs I
SET
DS009300-27
Input Noise Current (In) and Voltage (E
n
) vs Frequency
DS009300-28
R
SET
vs I
SET
DS009300-29
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Typical Applications
X5 Difference Amplifier
DS009300-3
Quiescent P
D
=
0.6 mW
500 Nano-Watt X10 Amplifier
DS009300-4
Quiescent P
D
=
500 nW
Floating Input Meter Amplifier
100 nA full Scale
DS009300-8
Quiescent P
D
=
1.8 µW
*Meter movement (0–100 µA, 2 k) marked for 0–100 nA full scale.
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Typical Applications (Continued)
X100 Instrumentation Amplifier 10 µW
DS009300-9
Note 5: Quiescent P
D
=
10 µW.
Note 6: R2, R3, R4, R5, R6 and R7 are 1%resistors. Note 7: R11 and C1 are for DC and AC common mode rejection adjustments.
R
SET
Connected to V
DS009300-10
R
SET
Connected to Ground
DS009300-11
DS009300-30
Transistor Current Sourcing
Biasing
DS009300-12
*R1 limits I
SET
maximum
FET Current Sourcing Biasing
DS009300-13
Offset Null Circuit
DS009300-14
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Schematic Diagram
DS009300-1
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Physical Dimensions inches (millimeters) unless otherwise noted
Metal Can Package (H)
Order Number LM4250H, LM4250CH or LM4250H-MIL
NS Package Number H08C
Ceramic Dual-In-Line Package (J)
Order Number LM4250J, or LM4250J-MIL
NS Package Number J08A
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Physical Dimensions inches (millimeters) unless otherwise noted (Continued)
Small Outline Package (M)
Order Number LM4250M
NS Package Number M08A
Molded Dual-In-Line Package (N)
Order Number LM4250CN
NS Package Number N08E
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Notes
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
National Semiconductor Corporation
Americas Tel: 1-800-272-9959 Fax: 1-800-737-7018 Email: support@nsc.com
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National Semiconductor Japan Ltd.
Tel: 81-3-5639-7560 Fax: 81-3-5639-7507
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LM4250 Programmable Operational Amplifier
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
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