Datasheet LM3478MWC, LM3478MMX, LM3478MM, LM3478MDC, LM3478EVAL Datasheet (NSC)

LM3478 High Efficiency Low-Side N-Channel Controller for Switching Regulator
General Description
The LM3478 is a versatile Low-Side N-FET switching regu­lator controller. It is suitable for use in topologies requiring low side FET, such as boost, flyback, SEPIC, etc. Moreover, the LM3478 can be operated at extremely high switching frequency in order to reduce the overall solution size. The switching frequency of LM3478 can be adjusted to any value between 100kHz and 1MHz by using a single external resis­tor. Current mode control provides superior bandwidth and transient response, besides cycle-by-cycle current limiting. Output current can be programmed with a single external resistor.
The LM3478 has built in features such as thermal shutdown, short-circuit protection, over voltage protection, etc. Power saving shutdown mode reduces the total supply current to 5µA and allows power supply sequencing. Internal soft-start limits the inrush current at start-up.
Key Specifications
n Wide supply voltage range of 2.97V to 40V n 100kHz to 1MHz Adjustable clock frequency
n
±
2.5% (over temperature) internal reference
n 10µA shutdown current (over temperature)
Features
n 8-lead Mini-SO8 (MSOP-8) package n Internal push-pull driver with 1A peak current capability n Current limit and thermal shutdown n Frequency compensation optimized with a capacitor and
a resistor
n Internal softstart n Current Mode Operation n Undervoltage Lockout with hysteresis
Applications
n Distributed Power Systems n Battery Chargers n Offline Power Supplies n Telecom Power Supplies n Automotive Power Systems
Typical Application Circuit
10135501
Typical High Efficiency Step-Up (Boost) Converter
May 2003
LM3478 High Efficiency Low-Side N-Channel Controller for Switching Regulator
© 2003 National Semiconductor Corporation DS101355 www.national.com
Connection Diagram
10135502
8 Lead Mini SO8 Package (MSOP-8 Package)
Package Marking and Ordering Information
Order Number Package Type Package Marking Supplied As:
LM3478MM MSOP-8 S14B 1000 units on Tape and
Reel
LM3478MMX MSOP-8 S14B 3500 units on Tape and
Reel
Pin Description
Pin Name Pin Number Description
I
SEN
1 Current sense input pin. Voltage generated across an external
sense resistor is fed into this pin.
COMP 2 Compensation pin. A resistor, capacitor combination connected to
this pin provides compensation for the control loop.
FB 3 Feedback pin. The output voltage should be adjusted using a
resistor divider to provide 1.26V at this pin.
AGND 4 Analog ground pin.
PGND 5 Power ground pin.
DR 6 Drive pin of the IC. The gate of the external MOSFET should be
connected to this pin.
FA/SD 7 Frequency adjust and Shutdown pin. A resistor connected to this
pin sets the oscillator frequency. A high level on this pin for 30µs will turn the device off. The device will then draw less than 10µA from the supply.
V
IN
8 Power Supply Input pin.
LM3478
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
Input Voltage 45V
FB Pin Voltage -0.4V
<
V
FB
<
7V
FA/SD Pin Voltage
-0.4V<V
FA/SD
<
7V
Peak Driver Output Current (
<
10µs) 1.0A
Power Dissipation Internally Limited
Storage Temperature Range −65˚C to +150˚C
Junction Temperature +150˚C
ESD Susceptibilty
Human Body Model (Note 2) 2kV
Lead Temperature
MM Package Vapor Phase (60 sec.) Infared (15 sec.)
215˚C 220˚C
DR Pin Voltage −0.4V VDR 8V
I
SEN
Pin Voltage 500mV
Operating Ratings (Note 1)
Supply Voltage 2.97V V
IN
40V
Junction Temperature Range −40˚C TJ≤ +125˚C
Switching Frequency 100kHz F
SW
1MHz
Electrical Characteristics
Specifications in Standard type face are for TJ= 25˚C, and in bold type face apply over the full Operating Temperature Range. Unless otherwise specified, V
IN
= 12V, RFA= 40k
Symbol Parameter Conditions Typical Limit Units
V
FB
Feedback Voltage V
COMP
= 1.4V,
2.97 V
IN
40V
1.26
1.2416/1.228
1.2843/1.292
V
V(min)
V(max)
V
LINE
Feedback Voltage Line Regulation
2.97 VIN≤ 40V 0.001 %/V
V
LOAD
Output Voltage Load Regulation
I
EAO
Source/Sink
±
0.5 %/V (max)
V
UVLO
Input Undervoltage Lock-out
2.85
2.97
V
V(max)
V
UV(HYS)
Input Undervoltage Lock-out Hysteresis
170
130 210
mV
mV (min)
mV (max)
F
nom
Nominal Switching Frequency
RFA= 40K 400
360 430
kHz
kHz(min)
kHz(max)
R
DS1 (ON)
Driver Switch On Resistance (top)
IDR= 0.2A, VIN=5V 16
R
DS2 (ON)
Driver Switch On Resistance (bottom)
IDR= 0.2A 4.5
V
DR (max)
Maximum Drive Voltage Swing(Note 6)
V
IN
<
7.2V V
IN
V
V
IN
7.2V 7.2
D
max
Maximum Duty Cycle(Note 7)
100 %
T
min
(on) Minimum On Time 325
210 600
nsec
nsec(min)
nsec(max)
I
SUPPLY
Supply Current (switching)
(Note 9)
2.0
3.0
mA
mA (max)
I
Q
Quiescent Current in Shutdown Mode
V
FA/SYNC/SD
= 5V (Note
10), V
IN
=5V
5
10
µA
µA (max)
V
SENSE
Current Sense Threshold Voltage
VIN= 5V 165
140/ 135 195/ 200
mV
mV (min)
mV (max)
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Electrical Characteristics (Continued)
Specifications in Standard type face are for TJ= 25˚C, and in bold type face apply over the full Operating Temperature Range. Unless otherwise specified, V
IN
= 12V, RFA= 40k
Symbol Parameter Conditions Typical Limit Units
V
SC
Short-Circuit Current Limit Sense Voltage
VIN= 5V 325
235 395
mV
mV (min)
mV (max)
V
SL
Internal Compensation Ramp Voltage
VIN=5V 92
52
132
mV
mV(min)
mV(max)
V
OVP
Output Over-voltage Protection (with respect to feedback voltage) (Note 8)
V
COMP
= 1.4V 50
32/ 25 78/ 85
mV
mV(min)
mV(max)
V
OVP(HYS)
Output Over-Voltage Protection Hysteresis(Note 8)
V
COMP
= 1.4V 60
20
110
mV
mV(min)
mV(max)
Gm Error Ampifier
Transconductance
V
COMP
= 1.4V
I
EAO
= 100µA
(Source/Sink)
800
600/ 365
1000/ 1265
µmho
µmho (min)
µmho (max)
A
VOL
Error Amplifier Voltage Gain
V
COMP
= 1.4V
I
EAO
= 100µA
(Source/Sink)
38
26 44
V/V
V/V (min)
V/V (max)
I
EAO
Error Amplifier Output Current (Source/ Sink)
Source, V
COMP
= 1.4V,
V
FB
=0V
110
80/ 50
140/ 180
µA
µA (min)
µA (max)
Sink, V
COMP
= 1.4V, V
FB
= 1.4V
−140
−100/ −85
−180/ −185
µA
µA (min)
µA (max)
V
EAO
Error Amplifier Output Voltage Swing
Upper Limit V
FB
=0V
COMP Pin = Floating
2.2
1.8
2.4
V
V(min)
V(max)
Lower Limit V
FB
= 1.4V
0.56
0.2
1.0
V
V(min)
V(max)
T
SS
Internal Soft-Start Delay
VFB= 1.2V, V
COMP
=
Floating
4 msec
T
r
Drive Pin Rise Time Cgs = 3000pf, VDR=0to
3V
25 ns
T
f
Drive Pin Fall Time Cgs = 3000pf, VDR=0to
3V
25 ns
VSD Shutdown threshold
(Note 5)
Output = High 1.27
1.35
V
V (max)
Output = Low 0.65
0.35
V
V (min)
I
SD
Shutdown Pin Current VSD=5V −1 µA
V
SD
=0V +1
TSD Thermal Shutdown 165 ˚C
T
sh
Thermal Shutdown Hysteresis
10 ˚C
θ
JA
Thermal Resistance MM Package 200 ˚C/W
LM3478
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Electrical Characteristics (Continued)
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device
is intended to be functional. For guaranteed specifications and test conditions, see the Electrical Characteristics.
Note 2: The human body model is a 100 pF capacitor discharged through a 1.5kresistor into each pin.
Note 3: All limits are guaranteed at room temperature (standard type face) and at temperature extremes (bold type face). All room temperature limits are 100%
tested. All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC) methods. All limits are used to calculate Average Outgoing Quality Level (AOQL).
Note 4: Typical numbers are at 25˚C and represent the most likely norm.
Note 5: The FA/SD pin should be pulled to V
IN
through a resistor to turn the regulator off. The voltage on the FA/SD pin must be above the maximum limit for Output
= High to keep the regulator off and must be below the limit for Output = Low to keep the regulator on.
Note 6: The voltage on the drive pin, V
DR
is equal to the input voltage when input voltage is less than 7.2V. VDRis equal to 7.2V when the input voltage is greater
than or equal to 7.2V.
Note 7: The limits for the maximum duty cycle can not be specified since the part does not permit less than 100% maximum duty cycle operation.
Note 8: The over-voltage protection is specified with respect to the feedback voltage. This is because the over-voltage protection tracks the feedback voltage. The
overvoltage protection threshold is given by adding the feedback voltage, V
FB
to the over-voltage protection specification.
Note 9: For this test, the FA/SD pin is pulled to ground using a 40K resistor.
Note 10: For this test, the FA/SD pin is pulled to 5V using a 40K resistor.
Typical Performance Characteristics Unless otherwise specified, V
IN
= 12V, TJ= 25˚C.
I
Q
vs Input Voltage (Shutdown) I
Supply
vs Input Voltage (Non-Switching)
10135503
10135534
I
Supply
vs VIN(Switching) Switching Frequency vs R
FA
10135535
10135504
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Typical Performance Characteristics Unless otherwise specified, V
IN
= 12V, TJ= 25˚C. (Continued)
Frequency vs Temperature Drive Voltage vs Input Voltage
10135554
10135505
Current Sense Threshold vs Input Voltage COMP Pin Voltage vs Load Current
10135545
10135562
Efficiency vs Load Current (3.3V In and 12V Out) Efficiency vs Load Current (5V In and 12V Out)
10135559 10135558
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Typical Performance Characteristics Unless otherwise specified, V
IN
= 12V, TJ= 25˚C. (Continued)
Efficiency vs Load Current (9V In and 12V Out) Efficiency vs Load Current (3.3V In and 5V Out
10135560
10135553
Error Amplifier Gain Error Amplifier Phase
10135555 10135556
COMP Pin Source Current vs Temperature Short Circuit Sense Voltage vs Input Voltage
10135536
10135557
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Typical Performance Characteristics Unless otherwise specified, V
IN
= 12V, TJ= 25˚C. (Continued)
Compensation Ramp vs Compensation Resistor Shutdown Threshold Hysteresis vs Temperature
10135551
10135546
Duty Cycle vs Current Sense Voltage
10135552
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Functional Block Diagram
10135506
Functional Description
The LM3478 uses a fixed frequency, Pulse Width Modulated (PWM), current mode control architecture. In a typical appli­cation circuit, the peak current through the external MOS­FET is sensed through an external sense resistor. The volt­age across this resistor is fed into the I
SEN
pin. This voltage is then level shifted and fed into the positive input of the PWM comparator. The output voltage is also sensed through an external feedback resistor divider network and fed into the error amplifier negative input (feedback pin, FB). The output of the error amplifier (COMP pin) is added to the slope compensation ramp and fed into the negative input of the PWM comparator.
At the start of any switching cycle, the oscillator sets the RS latch using the SET/Blank-out and switch logic blocks. This forces a high signal on the DR pin (gate of the external MOSFET) and the external MOSFET turns on. When the voltage on the positive input of the PWM comparator ex­ceeds the negative input, the RS latch is reset and the external MOSFET turns off.
The voltage sensed across the sense resistor generally contains spurious noise spikes, as shown in Figure 1. These spikes can force the PWM comparator to reset the RS latch prematurely. To prevent these spikes from resetting the latch, a blank-out circuit inside the IC prevents the PWM comparator from resetting the latch for a short duration after the latch is set. This duration is about 150ns and is called the blank-out time.
Under extremely light load or no-load conditions, the energy delivered to the output capacitor when the external MOSFET is on during the blank-out time is more than what is delivered to the load. An over-voltage comparator inside the LM3478 prevents the output voltage from rising under these condi­tions. The over-voltage comparator senses the feedback (FB pin) voltage and resets the RS latch under these conditions. The latch remains in reset state till the output decays to the nominal value.
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Functional Description (Continued)
SLOPE COMPENSATION RAMP
The LM3478 uses a current mode control scheme. The main advantages of current mode control are inherent cycle-by­cycle current limit for the switch, and simpler control loop characteristics. It is also easy to parallel power stages using current mode control since current sharing is automatic.
Current mode control has an inherent instability for duty cycles greater than 50%, as shown in Figure 2.InFigure 2, a small increase in the load current causes the switch cur­rent to increase by I
O
. The effect of this load change, I1,is
:
From the above equation, when D>0.5, I1will be greater than I
O
. In other words, the disturbance is divergent. So a very small perturbation in the load will cause the disturbance to increase.
With the compensation ramp,
10135507
FIGURE 1. Basic Operation of the PWM comparator
10135509
FIGURE 2. Sub-Harmonic Oscillation for D>0.5
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Functional Description (Continued)
The compensation ramp has been added internally in LM3478. The slope of this compensation ramp has been selected to satisfy most of the applications. The slope of the internal compensation ramp depends on the frequency. This slope can be calculated using the formula:
M
C=VSL.FS
Volts/second
In the above equation, V
SL
is the amplitude of the internal
compensation ramp. Limits for V
SL
have been specified in
the electrical characteristics. In order to provide the user additional flexibility, a patented
scheme has been implemented inside the IC to increase the slope of the compensation ramp externally, if the need arises. Adding a single external resistor, R
SL
(as shown in
Figure 4) increases the slope of the compensation ramp, M
C
by :
In this equation, VSLis equal to 40.10-6RSL. Hence,
VSLversus RSLhas been plotted in Figure 5 for different frequencies.
10135511
FIGURE 3. Compensation Ramp Avoids Sub-Harmonic Oscillation
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Functional Description (Continued)
FREQUENCY ADJUST/SHUTDOWN
The switching frequency of LM3478 can be adjusted be­tween 100kHz and 1MHz using a single external resistor. This resistor must be connected between FA/SD pin and ground, as shown in Figure 6. Please refer to the typical performance characteristics to determine the value of the resistor required for a desired switching frequency.
The FA/SD pin also functions as a shutdown pin. If a high signal (refer to the electrical characteristics for definition of high signal) appears on the FA/SD pin, the LM3478 stops
switching and goes into a low current mode. The total supply current of the IC reduces to less than 10 µA under these conditions.
Figure 7 shows implementation of shutdown function when operating in frequency adjust mode. In frequency adjust mode, connecting the FA/SD pin to ground forces the clock to run at a certain frequency. Pulling this pin high shuts down the IC. In frequency adjust mode, a high signal for more than 30µs shuts down the IC.
10135513
FIGURE 4. Increasing the Slope of the Compensation Ramp
10135551
FIGURE 5. VSLvs R
SL
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Functional Description (Continued)
SHORT-CIRCUIT PROTECTION
When the voltage across the sense resistor (measured on I
SEN
Pin) exceeds 350mV, short-circuit current limit gets activated. A comparator inside LM3478 reduces the switch­ing frequency by a factor of 5 and maintains this condition till the short is removed.
Typical Applications
The LM3478 may be operated in either continuous or dis­continuous conduction mode. The following applications are designed for continuous conduction operation. This mode of operation has higher efficiency and lower EMI characteristics than the discontinuous mode.
BOOST CONVERTER
The most common topology for LM3478 is the boost or step-up topology. The boost converter converts a low input voltage into a higher output voltage. The basic configuration for a boost regulator is shown in Figure 8. In continuous conduction mode (when the inductor current never reaches zero at steady state), the boost regulator operates in two cycles. In the first cycle of operation, MOSFET Q is turned on and energy is stored in the inductor. During this cycle,
diode D is reverse biased and load current is supplied by the output capacitor, C
OUT
.
In the second cycle, MOSFET Q is off and the diode is forward biased. The energy stored in the inductor is trans­ferred to the load and output capacitor. The ratio of these two cycles determines the output voltage. The output voltage is defined as:
(ignoring the drop across the MOSFET and the diode), or
where D is the duty cycle of the switch, VDis the forward voltage drop of the diode, and V
Q
is the drop across the MOSFET when it is on. The following sections describe selection of components for a boost converter
10135514
FIGURE 6. Frequency Adjust
10135516
FIGURE 7. Shutdown Operation in Frequency Adjust Mode
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Typical Applications (Continued)
POWER INDUCTOR SELECTION
The inductor is one of the two energy storage elements in a boost converter. Figure 9 shows how the inductor current varies during a switching cycle. The current through an inductor is quantified as:
10135522
FIGURE 8. Simplified Boost Converter Diagram (a) First cycle of operation. (b) Second cycle of operation
10135524
FIGURE 9. A. Inductor current B. Diode current
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Typical Applications (Continued)
If V
L
(t) is constant, diL(t)/dt must be constant. Hence, for a given input voltage and output voltage, the current in the inductor changes at a constant rate.
The important quantities in determining a proper inductance value are I
L
(the average inductor current) and iL(the inductor current ripple). If iLis larger than IL, the inductor current will drop to zero for a portion of the cycle and the converter will operate in discontinuous conduction mode. If i
L
is smaller than IL, the inductor current will stay above zero and the converter will operate in continuous conduction mode. All the analysis in this datasheet assumes operation in continuous conduction mode. To operate in continuous conduction mode, the following conditions must be met:
I
L
>
i
L
Choose the minimum I
OUT
to determine the minimum L. A
common choice is to set i
L
to 30% of IL. Choosing an appropriate core size for the inductor involves calculating the average and peak currents expected through the inductor. In a boost converter,
and I
L_peak=IL
(max) + iL(max),
where
A core size with ratings higher than these values should be chosen. If the core is not properly rated, saturation will dramatically reduce overall efficiency.
The LM3478 can be set to switch at very high frequencies. When the switching frequency is high, the converter can be operated with very small inductor values. With a small induc­tor value, the peak inductor current can be higher than the output currents, especially under light load conditions.
The LM3478 senses the peak current through the switch. The peak current through the switch is the same as the peak current calculated above.
PROGRAMMING THE OUTPUT VOLTAGE AND OUTPUT CURRENT
The output voltage can be programmed using a resistor divider between the output and the feedback pins, as shown in Figure 10. The resistors are selected such that the voltage at the feedback pin is 1.26V. R
F1
and RF2can be selected
using the equation,
A 100pF capacitor may be connected between the feedback and ground pins to reduce noise.
The maximum amount of current that can be delivered at the output can be controlled by the sense resistor, R
SEN
. Current limit occurs when the voltage that is generated across the sense resistor equals the current sense threshold voltage, V
SENSE
. Limits for V
SENSE
have been specified in the elec-
trical characteristics. This can be expressed as:
I
sw(peak)
*
R
SEN=VSENSE
V
SENSE
represents the maximum value of the control signal as shown in Figure 2. This control signal, however, is not a constant value and changes over the course of a period as a result of the internal compensation ramp (see Figure 3). Therefore the current limit will also change as a result of the internal compensation ramp. The actual command signal, V
CS
, can be better expressed as a function of the sense
voltage and the internal compensation ramp:
V
CS=VSENSE
−(D*VSL)
V
SL
is defined as the internal compensation ramp voltage,
limits are specified in the electrical characteristics. The peak current through the switch is equal to the peak
inductor current.
I
sw(peak)=IL
+ i
L
Therefore for a boost converter
Combining the three equation yields an expression for R
SEN
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Typical Applications (Continued)
CURRENT LIMIT WITH ADDITIONAL SLOPE COMPENSATION
If an external slope compensation resistor is used (see Figure 4) the internal control signal will be modified and this will have an effect on the current limit. The control signal is given by:
V
CS=VSENSE
−(D*VSL)
Where V
SENSE
and VSLare defined parameters in the elec-
trical characteristics section. If R
SL
is used, then this will add to the existing slope compensation. The command voltage will then be given by:
V
CS=VSENSE
−(D*(VSL+ VSL))
Where V
SL
is the additional slope compensation generated and can be calculated by use of Figure 5 or is equal to 40 x 10
−6
*
RSL. This changes the equation for R
SEN
to:
Therefore RSLcan be used to provide an additional method for setting the current limit.
POWER DIODE SELECTION
Observation of the boost converter circuit shows that the average current through the diode is the average load cur­rent, and the peak current through the diode is the peak current through the inductor. The diode should be rated to handle more than its peak current. The peak diode current can be calculated using the formula:
I
D(Peak)=IOUT
/ (1−D) + I
L
In the above equation, I
OUT
is the output current and ILhas
been defined in Figure 9. The peak reverse voltage for boost converter is equal to the
regulator output voltage. The diode must be capable of handling this voltage. To improve efficiency, a low forward drop schottky diode is recommended.
POWER MOSFET SELECTION
The drive pin of LM3478 must be connected to the gate of an external MOSFET. In a boost topology, the drain of the external N-Channel MOSFET is connected to the inductor and the source is connected to the ground. The drive pin (DR) voltage depends on the input voltage (see typical per­formance characteristics). In most applications, a logic level MOSFET can be used. For very low input voltages, a sub­logic level MOSFET should be used.
The selected MOSFET directly controls the efficiency. The critical parameters for selection of a MOSFET are:
1. Minimum threshold voltage, V
TH
(MIN)
2. On-resistance, R
DS
(ON)
3. Total gate charge, Q
g
4. Reverse transfer capacitance, C
RSS
5. Maximum drain to source voltage, V
DS(MAX)
The off-state voltage of the MOSFET is approximately equal to the output voltage. V
DS(MAX)
of the MOSFET must be greater than the output voltage. The power losses in the MOSFET can be categorized into conduction losses and ac switching or transition losses. R
DS(ON)
is needed to estimate
the conduction losses. The conduction loss, P
COND
,isthe
I
2
R loss across the MOSFET. The maximum conduction loss
is given by:
10135520
FIGURE 10. Adjusting the Output Voltage
LM3478
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Typical Applications (Continued)
where D
MAX
is the maximum duty cycle.
The turn-on and turn-off transitions of a MOSFET require times of tens of nano-seconds. C
RSS
and Qgare needed to estimate the large instantaneous power loss that occurs during these transitions.
The amount of gate current required to turn the MOSFET on can be calculated using the formula:
I
G=Qg.FS
The required gate drive power to turn the MOSFET on is equal to the switching frequency times the energy required to deliver the charge to bring the gate charge voltage to V
DR
(see electrical characteristics and typical performance char­acteristics for the drive voltage specification).
P
Drive=FS.Qg.VDR
INPUT CAPACITOR SELECTION
Due to the presence of an inductor at the input of a boost converter, the input current waveform is continuous and triangular, as shown in Figure 9. The inductor ensures that the input capacitor sees fairly low ripple currents. However, as the input capacitor gets smaller, the input ripple goes up. The rms current in the input capacitor is given by:
The input capacitor should be capable of handling the rms current. Although the input capacitor is not as critical in a boost application, low values can cause impedance interac­tions. Therefore a good quality capacitor should be chosen in the range of 100µF to 200µF. If a value lower than 100µF is used than problems with impedance interactions or switching noise can affect the LM3478. To improve perfor­mance, especially with V
IN
below 8 volts, it is recommended to use a 20resistor at the input to provide a RC filter. The resistor is placed in series with the V
IN
pin with only a bypass
capacitor attached to the V
IN
pin directly (see Figure 11). A
0.1µF or 1µF ceramic capacitor is necessary in this configu­ration. The bulk input capacitor and inductor will connect on the other side of the resistor with the input power supply.
OUTPUT CAPACITOR SELECTION
The output capacitor in a boost converter provides all the output current when the inductor is charging. As a result it sees very large ripple currents. The output capacitor should be capable of handling the maximum rms current. The rms current in the output capacitor is:
Where
and D, the duty cycle is equal to (V
OUT−VIN
)/V
OUT
.
The ESR and ESL of the output capacitor directly control the output ripple. Use capacitors with low ESR and ESL at the output for high efficiency and low ripple voltage. Surface Mount tantalums, surface mount polymer electrolytic and polymer tantalum, Sanyo- OSCON, or multi-layer ceramic capacitors are recommended at the output.
Designing SEPIC Using LM3478
Since the LM3478 controls a low-side N-Channel MOSFET, it can also be used in SEPIC (Single Ended Primary Induc­tance Converter) applications. An example of SEPIC using LM3478 is shown in Figure 12. As shown in Figure 12, the output voltage can be higher or lower than the input voltage. The SEPIC uses two inductors to step-up or step-down the input voltage. The inductors L1 and L2 can be two discrete inductors or two windings of a coupled transformer since equal voltages are applied across the inductor throughout the switching cycle. Using two discrete inductors allows use of catalog magnetics, as opposed to a custom transformer. The input ripple can be reduced along with size by using the coupled windings of transformer for L1 and L2.
Due to the presence of the inductor L1 at the input, the SEPIC inherits all the benefits of a boost converter. One main advantage of SEPIC over boost converter is the inher­ent input to output isolation. The capacitor CS isolates the input from the output and provides protection against shorted or malfunctioning load. Hence, the A SEPIC is useful for replacing boost circuits when true shutdown is required. This means that the output voltage falls to 0V when the switch is turned off. In a boost converter, the output can only fall to the input voltage minus a diode drop.
10135593
FIGURE 11. Reducing IC Input Noise
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Designing SEPIC Using LM3478
(Continued)
The duty cycle of a SEPIC is given by:
In the above equation, VQis the on-state voltage of the MOSFET, Q, and V
DIODE
is the forward voltage drop of the
diode.
POWER MOSFET SELECTION
As in boost converter, the parameters governing the selec­tion of the MOSFET are the minimum threshold voltage, V
TH(MIN)
, the on-resistance, R
DS(ON)
, the total gate charge,
Q
g
, the reverse transfer capacitance, C
RSS
, and the maxi-
mum drain to source voltage, V
DS(MAX)
. The peak switch
voltage in a SEPIC is given by:
V
SW(PEAK)
=VIN+V
OUT+VDIODE
The selected MOSFET should satisfy the condition:
V
DS(MAX)
>
V
SW(PEAK)
The peak switch current is given by:
The rms current through the switch is given by:
POWER DIODE SELECTION
The Power diode must be selected to handle the peak current and the peak reverse voltage. In a SEPIC, the diode peak current is the same as the switch peak current. The off-state voltage or peak reverse voltage of the diode is V
IN
+V
OUT
. Similar to the boost converter, the average diode current is equal to the output current. Schottky diodes are recommended.
SELECTION OF INDUCTORS L1 AND L2
Proper selection of the inductors L1 and L2 to maintain constant current mode requires calculations of the following parameters.
Average current in the inductors:
I
L2AVE=IOUT
Peak to peak ripple current, to calculate core loss if neces­sary:
Maintaining the condition I
L
>
iLto ensure constant current
mode yields:
10135544
FIGURE 12. Typical SEPIC Converter
LM3478
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Designing SEPIC Using LM3478
(Continued)
Peak current in the inductor, to ensure the inductor does not saturate:
I
L1PK
must be lower than the maximum current rating set by
the current sense resistor. The value of L1 can be increased above the minimum rec-
ommended to reduce input ripple and output ripple. How­ever, once D
IL1
is less than 20% of I
L1AVE
, the benefit to
output ripple is minimal. By increasing the value of L2 above the minimum recom-
mended,
IL2
can be reduced, which in turn will reduce the
output ripple voltage:
where ESR is the effective series resistance of the output capacitor.
If L1 and L2 are wound on the same core, then L1 = L2 = L. All the equations above will hold true if the inductance is replaced by 2L. A good choice for transformer with equal turns is Coiltronics CTX series Octopack.
SENSE RESISTOR SELECTION
The peak current through the switch, I
SW(PEAK)
can be ad-
justed using the current sense resistor, R
SEN
, to provide a
certain output current. Resistor R
SEN
can be selected using
the formula:
Sepic Capacitor Selection
The selection of SEPIC capacitor, CS, depends on the rms current. The rms current of the SEPIC capacitor is given by:
The SEPIC capacitor must be rated for a large ACrms cur­rent relative to the output power. This property makes the SEPIC much better suited to lower power applications where the rms current through the capacitor is relatively small (relative to capacitor technology). The voltage rating of the SEPIC capacitor must be greater than the maximum input voltage. Tantalum capacitors are the best choice for SMT,
having high rms current ratings relative to size. Ceramic capacitors could be used, but the low C values will tend to cause larger changes in voltage across the capacitor due to the large currents. High C value ceramics are expensive. Electrolytics work well for through hole applications where the size required to meet the rms current rating can be accommodated. There is an energy balance between CS and L1, which can be used to determine the value of the capacitor. The basic energy balance equation is:
Where
is the ripple voltage across the SEPIC capacitor, and
is the ripple current through the inductor L1. The energy balance equation can be solved to provide a minimum value for C
S
:
Input Capacitor Selection
Similar to a boost converter, the SEPIC has an inductor at the input. Hence, the input current waveform is continuous and triangular. The inductor ensures that the input capacitor sees fairly low ripple currents. However, as the input capaci­tor gets smaller, the input ripple goes up. The rms current in the input capacitor is given by:
The input capacitor should be capable of handling the rms current. Although the input capacitor is not as critical in a boost application, low values can cause impedance interac­tions. Therefore a good quality capacitor should be chosen in the range of 100µF to 200µF. If a value lower than 100µF is used than problems with impedance interactions or switching noise can affect the LM3478. To improve perfor­mance, especially with V
IN
below 8 volts, it is recommended to use a 20resistor at the input to provide a RC filter. The resistor is placed in series with the V
IN
pin with only a bypass
capacitor attached to the V
IN
pin directly (see Figure 11). A
0.1µF or 1µF ceramic capacitor is necessary in this configu­ration. The bulk input capacitor and inductor will connect on the other side of the resistor with the input power supply.
Output Capacitor Selection
The ESR and ESL of the output capacitor directly control the output ripple. Use low capacitors with low ESR and ESL at
LM3478
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Output Capacitor Selection
(Continued)
the output for high efficiency and low ripple voltage. Surface mount tantalums, surface mount polymer electrolytic and polymer tantalum, Sanyo- OSCON, or multi-layer ceramic capacitors are recommended at the output.
The output capacitor of the SEPIC sees very large ripple currents (similar to the output capacitor of a boost converter. The rms current through the output capacitor is given by:
The ESR and ESL of the output capacitor directly control the output ripple. Use low capacitors with low ESR and ESL at the output for high efficiency and low ripple voltage. Surface
mount tantalums, surface mount polymer electrolytic and polymer tantalum, Sanyo- OSCON, or multi-layer ceramic capacitors are recommended at the output for low ripple.
Other Application Circuit
10135543
FIGURE 13. Typical Flyback Circuit
LM3478
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Physical Dimensions inches (millimeters)
unless otherwise noted
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LM3478 High Efficiency Low-Side N-Channel Controller for Switching Regulator
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
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