Datasheet LM3403N, LM3403M, LM3303N, LM3403J Datasheet (NSC)

LM3303/LM3403
Quad Operational Amplifiers

General Description

The LM3303 and LM3403 are monolithic quad operational
amplifiers consisting of four independent high gain, internal­ly frequency compensated, operational amplifiers designed
to operate from a single power supply or dual power sup­plies over a wide range of voltages. The common mode
input range includes the negative supply, thereby eliminat­ing the necessity for external biasing components in many
applications.

Features

Y

Input common mode voltage range includes ground or
negative supply

Y

Output voltage can swing to ground or negative supply

February 1995

Y

Four internally compensated operational amplifiers in a
single package

Y

Wide power supply range single supply of 3.0V to 36V
dual supply of

Y

Class AB output stage for minimal crossover distortion

Y

Short circuit protected outputs

Y

High open loop gain 200k

Y

LM741 operational amplifier type performance

g

1.5V tog18V

Applications

Y

Filters

Y

Voltage controlled oscillators

LM3303/LM3403 Quad Operational Amplifiers

Connection Diagram

14-Lead DIP and SO-14 Package

Top View

Equivalent Circuit ((/4 of Circuit)

TL/H/10064– 1

Order Information

Device Package Package

Code Code Description

LM3303J J14A Ceramic DIP
LM3303N N14A Molded DIP

LM3303M M14A Molded Surface Mount
LM3403J J14A Ceramic DIP
LM3403N N14A Molded DIP
LM3403M M14A Molded Surface Mount

TL/H/10064– 2

C

1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.

TL/H/10064

Absolute Maximum Ratings

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.

Storage Temperature Range

Ceramic DIP
Molded DIP and SO-14

Operating Temperature Range

Industrial (LM3303)
Commercial (LM3403) 0

b

65§Ctoa175§C

b

65§Ctoa150§C

b

40§Ctoa85§C

Ctoa70§C

§

Lead Temperature

Ceramic DIP (Soldering, 60 sec.) 300
Molded DIP and SO-14
(Soldering, 10 sec.) 265

C

§

C

§

LM3303 and LM3403
Electrical Characteristics

e

T

25§C, V

A

Symbol Parameter Conditions

V

I

IO

I

IB

Z

I

CC

CMR Common Mode Rejection R

V

Input Offset Voltage 2.0 8.0 2.0 8.0 mV

IO

Input Offset Current 30 75 30 50 nA

Input Bias Current 200 500 200 500 nA

Input Impedance 0.3 1.0 0.3 1.0 MX

I

Supply Current V

Input Voltage Range

IR

e

O

s

S

PSRR Power Supply

Rejection Ratio

I

OS

A

V

TR Transient Rise Time/ V

BW Bandwidth V

SR Slew Rate V

Output Short Circuit Current
(Per Amplifier) (Note 4)

Large Signal Voltage Gain V

VS

Output Voltage Swing R

OP

Response Fall Time A

Overshoot V

R

R

A

A

A

O

t

L

e

L

e

L

O

e

V

O

e

V

O

e

V

eb

I

e

V

e

e

e

e

e

CC

e %

0V, R

L

10 kX 70 90 70 90 dB

g

10V,

2.0 kX

10 kX

2.0 kX

50 mV,

e

1.0, R

L

50 mV,

e

1.0, R

L

50 mV,

e

1.0, R

L

10V toa10V,

1.0

Internal Power Dissipation (Notes 1, 2)

14L-Ceramic DIP 1.36W
14L-Molded DIP 1.04W
SO-14 0.93W

a

Supply Voltage between V

and V

b

Differential Input Voltage (Note 3)

Input Voltage (Vb)b0.3V to V

ESD Tolerance (To Be Determined)

g

15V, unless otherwise specified

LM3303 LM3403

Min Typ Max Min Typ Max

2.8 7.0 2.8 7.0 mA

a

12Va12.5V

b

to V

to V

b

a

13Va13.5V

to Vbto V

b

30 150 30 150 mV/V

g

10

g

30g45g10

g

30g45 mA

20 200 20 200 V/mV

10 kX

10 kX

10 kX

g

12 12.5

g

10 12

0.3 0.3 ms

5.0 5.0 %

1.0 1.0 MHz

g

12a13.5

g

10

g

13

0.6 0.6 V/ms

g

36V

30V

a

Units

V

V

2

LM3303 and LM3403 (Continued)

e

Electrical Characteristics T

A

25§C, V

The following specifications apply forb40§CsT

Symbol Parameter Conditions

V

IO

Input Offset Voltage 10 10 mV

DVIO/DT Input Offset Voltage

Temperature Sensitivity

I

IO

Input Offset Current 250 200 nA

DIIO/DT Input Offset Current

Temperature Sensitivity

I

IB

A

VS

V

OP

Input Bias Current 1000 800 nA

Large Signal Voltage Gain V

Output Voltage Swing R

e

g

15V, unless otherwise specified

CC

s

a

85§C for the LM3303, and 0§CsT

A

e

O

t

R

L

e

L

g

10V,

2.0 kX

2.0 kX

LM3303 and LM3403
Electrical Characteristics

Symbol Parameter Conditions

V

IO

I

IO

I

IB

I

CC

PSRR Power Supply

A

VS

V

OP

CS Channel Separation 1.0 Hzsfs20 kHz

Note 1: T

Note 2: Ratings apply to ambient temperature at 25

the SO-14 at 7.5 mW/

Note 3: For supply voltage less than 30V between V

Note 4: Not to exceed maximum package power dissipation.

Note 5: Output will swing to ground.

Input Offset Voltage 8.0 2.0 8.0 mV

Input Offset Current 75 30 50 nA

Input Bias Current 500 200 500 nA

Supply Current 2.5 7.0 2.5 7.0 mA

Rejection Ratio

Large Signal Voltage Gain R

Output Voltage Swing R
(Note 5)

e

150§C for the Molded DIP and SO-14, and 175§C for the Ceramic DIP.

J Max

C.

§

e

T

25§C, Vae5.0V, VbeGND, unless otherwise specified

A

t

2.0 kX 20 200 20 200 V/mV

L

e

10 kX 3.3 3.3

L

s

a

5.0VsV

e

R

L

30V, (Va)(V

10 kX

(Input Referenced)

C. Above this temperature, derate the 14L-Ceramic DIP at 9.1 mW/§C, the 14L-Molded DIP at 8.3 mW/§C, and

§

a

and Vb, the absolute maximum input voltage is equal to the supply voltage.

s

a

70§C for the LM3403

A

LM3303 LM3403

Units

Min Typ Max Min Typ Max

10 10 mV/

50 50 pA/

15 15 V/mV

g

10

LM3303 LM3403

g

10 V

Units

Min Typ Max Min Typ Max

150 150 mV/V

a

b

2.0

b

120

)

b

2.0

b

120 dB

C

§

C

§

V

3

Typical Performance Characteristics

Open Loop
Frequency Response

Output Swing vs
Supply Voltage

Sine Wave Response vs Frequency

Input Bias Current
vs Temperature

Output Voltage

Input Bias Current
vs Supply Voltage

TL/H/10064– 3

4

Typical Applications

Multiple Feedback Bandpass Filter

Comparator with Hysteresis

e

f

center frequency

o

e

BW

Bandwidth
RinkX
CinmF

f

o

k

e

Q

10

BW

Q

eC2e

C1

3

1R3e9Q

2

b

1(Using scaling factors in these expressions.

eR2e

R1

If source impedance is high or varies, filter may be preceded with voltage
follower buffer to stabilize filter parameters.

TL/H/10064– 4

Design example:

e

Let R1
then R3

5, f

e

e
e

R3

e

C

e

1 kHz

o

R2e10 kX

2

9(5)

215 kX

5

e

1.6 nF

3

b

10

given: Q

Wein Bridge Oscillator

R1

V

V

H

IL

IH

e

e

R1aR2

e

R1aR2

R1aR2

R1

b

V

(V

R1

(V

(V

OH

)aV

OL

REF

REF

b

V

)aV

OH

REF

b

VOL)

High Impedance Differential Amplifier

e

V

C(1aaab)(V2bV1)

OUT

R2

R6

A

for best CMRR

R5

R7

e

R4

R1

e

R5

R2

R6

Gain

e

2R1

a

e

1

R5

#

R3

C(1aaab)

J

TL/H/10064– 6

REF

TL/H/10064– 7

AC Coupled Non-Inverting Amplifier

TL/H/10064– 5

1

e

f

o

2qRC

for f

e

1 kHz

o

e

R

16 kX

e

0.01 mF

C

TL/H/10064– 9

A

A

V

V

e1a

e

R2

R1

11 (as shown)

5

Typical Applications (Continued)

AC Coupled Inverting Amplifier

Voltage Reference

e

A

V

e

A

V

Rf

R1

10 (as shown)

Ground Referencing a

Differential Input Signal

R1

e

V

O

R1aR2

1

e

a

V

V

O

TL/H/10064– 8

TL/H/10064– 11

2

Voltage Controlled Oscillator

a

V

e

2

#

as shown

J

Pulse Generator

TL/H/10064– 10

TL/H/10064– 14

Note 1: Wide Control Voltage Range:

s

s

0V

V

2(Vg1.5V)

CO

TL/H/10064– 12

6

Typical Applications (Continued)

Function Generator

Note 2: f

e

R1aR2

4CRfR1

if R3

e

R2aR1

R2R1

BW

e

Q

f

o

where:

e

T

Center Frequency Gain

BP

e

Bandpass Notch Gain

T

N

1

e

f

,V

o

2qRC

R1eQR

R1

e

R2

T

BP

R3eTNR2

e

10 C

C1

REF

1

e

2

Bi-Quad Filter

V

CC

Example:

e

1000 Hz

f

o

e

BW

e

T

BP

e

T

N

e

160 kX

R

e

R1

e

R2

e

R3

e

0.001 mF

C

100 Hz
1

1

1.6 MX

1.6 MX

1.6 MX

TL/H/10064– 13

TL/H/10064– 15

7

8

Physical Dimensions inches (millimeters)

14-Lead Ceramic Dual-In-Line Package (J)

Order Number LM3303J or LM3403J

NS Package Number J14A

14-Lead Molded Surface Mount (M)

Order Number LM3403M

NS Package Number M14A

9

Physical Dimensions inches (millimeters) (Continued)

LM3303/LM3403 Quad Operational Amplifiers

Order Number LM3303N or LM3403N

NS Package Number N14A

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SEMICONDUCTOR CORPORATION. As used herein:

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systems which, (a) are intended for surgical implant support device or system whose failure to perform can
into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life
failure to perform, when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can effectiveness.
be reasonably expected to result in a significant injury
to the user.

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14-Lead Molded Dual-In-Line Package (N)

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