Datasheet LM336, LM336BZ, LM236Z, LM236D, LM236 Datasheet (SGS Thomson Microelectronics)

.LOW TEMPERATURECOEFFICIENT

.WIDE OPERATING CURRENT OF 400µATO

10mA

.0.2Ω DYNAMICIMPEDANCE

.GUARANTEEDTEMPERATURE STABILITY

.FASTTURN-ON

LM236

LM336,B

2.5VVOLTAGE REFERENCES

Z

TO92

(PlasticPackage

DESC RIP TI ON

TheLM236andLM336areprecision2.5Vregulator
diodes.ThesevoltagereferencemonolithicICsop­eratelike 2.5Vzenerdiodeswith alow temperature
coefficient and a dynamic impedance of 0.2Ω.A
third pin enables adjusting the reference voltage
and the temperaturecoefficient.

PI N CONNECTIONS

TO92

(Bottomview)

-

+

V

V

ADJ

ORDER CODES

Part num-

ber

LM236 –25
LM336,B 0

Temperature Range

SO8

(Topview)

+

NC

V

8765

D

SO8

(PlasticMicropackage)

Package

o

C, +85oC ••

o

C, +70oC ••

ADJ

NC

ZD

1234

NC

NC

October1997 1/9

-

V

NC

LM236 - LM336,B

SCHEMA TIC DIAGRAM

V

2kΩ

24kΩ

1.1k

Ω

24kΩ

6.6k

600Ω

6.6kΩ

Ω

30kΩ

ADJ

V

3pF 10kΩ

50kΩ

6pF

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter LM236 LM336,B Unit

Current

I

R

I

F

T

oper

T

stg

Reverse
Forward

15
10

15

10
Operating Free-air Temperature Range –25 to +85 0 to +70
Storage Temperature Range –65 to +150

mA

o
o

C
C

ELECTRICAL CHARACTERISTICS

LM236 -25
LM336,B 0

o

C ≤ T

o

C ≤ T

amb

amb

(unless otherwise specified)

Symbol Parameter

Reverse Breakdown Voltage

V

2/9

∆V

Z

K

K

R

R

D

VT

VH

= +25oC, IR= 1mA)

(T

amb

Reverse Breakdown Voltage Change with Current

amb
min.

≤ 10mA)

R

= +25oC
≤ T

amb

≤ T

max.

(400µA ≤ I

T
T

Reverse Dynamic Impedance (IR=1mA)

= +25oC

T

amb

≤ T

T

min.

amb

≤ T

max.

Temperature Stability (VR= 2.49V, IR= 1mA) 3.5 9 1.8 6 mV
Long Term Stability (T

= +25oC ±0.1oC, IR= 1mA)

amb

≤ +85oC

≤ +70oC

LM236, LM336
LM336B

LM236 LM336,B

Min. Typ. Max. Min. Typ. Max.

2.44 2.49 2.54 2.39

2.6

0.2

0.4

6

3

10

0.6
1

2.44

2.49

2.59

2.49

2.54

2.6310

0.2

0.411.4

12

20 20

Unit

V

mV

Ω

ppm

LM236 - LM336,B

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LM236 - LM336,B

APPL ICATION HINTS

TheLM236,LM336voltagereferencesareeasierto
use than zener diodes. Their low impedance and
widecurrent range facilitatebiasing in any circuits.
Besides,thebreakdownvoltageor thetemperature
coefficientcanbeadjustedsoas tooptimizetheper­formanceof the circuit.

Figure 1 representsa LM336 with a 10kΩ potenti-
ometertoadjustthereversebreakdownvoltagecan
be adjustedwithoutalteringthe temperaturecoeffi-

Figure 1 : The LM336 with Pot for Adjustmentof

BreakdownVoltage

V

R

S

R1

LM336

10k

Ω

cientof the circuit. The adjustmentrange is gener­ally sufficienttoadjusttheinitialtoleranceof thecir­cuit andthe inaccuracyof the amplifiercircuit.

Toobtainalowertemperaturecoefficienttwodiodes
canbe connectedinseriesas indicatedinFigure 2.
Whenthe circuitis adjustedto 2.49V the tempera­turecoefficientis minimized.

For a correct temperature coefficient, the diodes
shouldbe at the sameambient temperatureas the
LM336.Thevalue of R1is not critical(2-20kΩ).

Figure 2 : Temperature Coefficient Adjustment

V

R

S

1N4148

LM336

R1

10kΩ

1N4148

4/9

TYP ICAL APPLIC ATI ONS
Figure 3 : 2.5V Reference

+5V

LM236 - LM336,B

Figure 4 : Wide Input Range Reference

V

i

+3.5V to +40V

2.5kΩ

LM334

+2.5V

LM336

Figure 5 : PrecisionPower Regulatorwith Low Temperature Coefficient

V

i

LM317

Input Output

ADJ

LM336

1.2k

1N457

1N457

Ω

10k

V

O

R1

Ω

375

Ω

R2

Ω

2k

68Ω

V = +2.5V

O

LM336

Figure 6 : Adjustable Shunt Regulator

+6V to +40V

R

S

20kΩ

100kΩ

20k

Output adjust

V

O

+5V to +40V

560Ω

2N2905

100pF

LM308A

Ω

LM336

5/9

LM236 - LM336,B

Figure 7 : Linear Ohmmeter

2.5k
1%

Ω

1kΩ/V

25
kΩ
1%

10kΩ/V

250

kΩ

1%

LM334

2.5

MΩ

1%

100kΩ/V

1MΩ/V

R

x

V

LM336

2

3

1

LM308A

35

calibrate

100pF

Ω

10kΩ

8

6

V

O

Figure 8 : Bipolar Output Reference

+2V

+5V

5kΩ

Ω

2k

LM336

-5V

10kΩ

1%

1.25V

10kΩ

1%

5kΩ

6/9

Figure 9 : 5V Buffered Reference

V

+7V to +36V

LM236 - LM336,B

i

20kΩ

1%

5.1kΩ

10kΩ

CAL

LM336

Figure 10 : Low Noise Buffered Reference

+5V

2.2kΩ

20k

2

3

20k

LM308

4

Ω

7

6

5V

8

100pF

1%

2

LM308A

Ω

2kΩ

3

7

100pF

6

4

10kΩ

CAL

LM336

200kΩ

10µF

10µF

7/9

LM236 - LM336,B

PACKAG E MECHANICAL DATA

8 PINS - PL ASTIC M ICROPACKAGE (SO)

Dimensions

A 1.75 0.069
a1 0.1 0.25 0.004 0.010
a2 1.65 0.065
a3 0.65 0.85 0.026 0.033

b 0.35 0.48 0.014 0.019

b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.020
c1 45

D 4.8 5.0 0.189 0.197

E 5.8 6.2 0.228 0.244

e 1.27 0.050

e3 3.81 0.150

F 3.8 4.0 0.150 0.157

L 0.4 1.27 0.016 0.050

M 0.6 0.024

S8

Min. Typ. Max. Min. Typ. Max.

Millimeters Inches

o

(typ.)

o

(max.)

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PACKAG E MECHANICAL DATA

3 PINS - PL ASTIC PACKA GE TO92

LM236 - LM336,B

Dimensions

Min. Typ. Max. Min. Typ. Max.

Millimeters Inches

L 1.27 0.05

B 3.2 3.7 4.2 0.126 0.1457 0.1654

O1 4.45 5.00 5.2 0.1752 0.1969 0.2047

C 4.58 5.03 5.33 0.1803 0.198 0.2098

K 12.7 0.5

O2 0.407 0.5 0.508 0.016 0.0197 0.02

a 0.35 0.0138

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsi­bility for the consequences of use of such information nor for any infringement of patents or other rightsof third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON
Microelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes
and replacesall information previously supplied. SGS-THOMSON Microelectronics products are not authorizedfor use as critical
components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.

 1997 SGS-THOMSON Microelectronics– Printed in Italy – All Rights Reserved

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