Datasheet LM3303MX, LM3303M, LM3303J Datasheet (NSC)

TL/H/10064

LM3303/LM3403 Quad Operational Amplifiers

February 1995

LM3303/LM3403 Quad Operational Amplifiers

General Description

The LM3303 and LM3403 are monolithic quad operational amplifiers consisting of four independent high gain, internally frequency compensated, operational amplifiers designed to operate from a single power supply or dual power supplies over a wide range of voltages. The common mode input range includes the negative supply, thereby eliminating the necessity for external biasing components in many applications.

Features

Y

Input common mode voltage range includes ground or negative supply

Y

Output voltage can swing to ground or negative supply

Y

Four internally compensated operational amplifiers in a single package

Y

Wide power supply range single supply of 3.0V to 36V dual supply of

g

1.5V tog18V

Y

Class AB output stage for minimal crossover distortion

Y

Short circuit protected outputs

Y

High open loop gain 200k

Y

LM741 operational amplifier type performance

Applications

Y

Filters

Y

Voltage controlled oscillators

Connection Diagram

14-Lead DIP and SO-14 Package

TL/H/10064– 1

Top View

Order Information

Device Package Package

Code Code Description

LM3303J J14A Ceramic DIP LM3303N N14A Molded DIP

LM3303M M14A Molded Surface Mount LM3403J J14A Ceramic DIP LM3403N N14A Molded DIP LM3403M M14A Molded Surface Mount

Equivalent Circuit ((/4 of Circuit)

TL/H/10064– 2

C

1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.

Absolute Maximum Ratings

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications.

Storage Temperature Range

Ceramic DIP

b

65§Ctoa175§C

Molded DIP and SO-14

b

65§Ctoa150§C

Operating Temperature Range

Industrial (LM3303)

b

40§Ctoa85§C

Commercial (LM3403) 0

§

Ctoa70§C

Lead Temperature

Ceramic DIP (Soldering, 60 sec.) 300

§

C Molded DIP and SO-14 (Soldering, 10 sec.) 265

§

C

Internal Power Dissipation (Notes 1, 2)

14L-Ceramic DIP 1.36W 14L-Molded DIP 1.04W SO-14 0.93W

Supply Voltage between V

a

and V

b

36V

Differential Input Voltage (Note 3)

g

30V

Input Voltage (Vb)b0.3V to V

a

ESD Tolerance (To Be Determined)

LM3303 and LM3403 Electrical Characteristics

T

A

e

25§C, V

CC

e

g

15V, unless otherwise specified

Symbol Parameter Conditions

LM3303 LM3403

Units

Min Typ Max Min Typ Max

V

IO

Input Offset Voltage 2.0 8.0 2.0 8.0 mV

I

IO

Input Offset Current 30 75 30 50 nA

I

IB

Input Bias Current 200 500 200 500 nA

Z

I

Input Impedance 0.3 1.0 0.3 1.0 MX

I

CC

Supply Current V

O

e

0V, R

L

e %

2.8 7.0 2.8 7.0 mA

CMR Common Mode Rejection R

S

s

10 kX 70 90 70 90 dB

V

IR

Input Voltage Range

a

12Va12.5V

a

13Va13.5V

V

to V

b

to V

b

to Vbto V

b

PSRR Power Supply

30 150 30 150 mV/V

Rejection Ratio

I

OS

Output Short Circuit Current

g

10

g

30g45g10

g

30g45 mA

(Per Amplifier) (Note 4)

A

VS

Large Signal Voltage Gain V

O

e

g

10V,

20 200 20 200 V/mV

R

L

t

2.0 kX

V

OP

Output Voltage Swing R

L

e

10 kX

g

12 12.5

g

12a13.5

V

R

L

e

2.0 kX

g

10 12

g

10

g

13

TR Transient Rise Time/ V

O

e

50 mV,

0.3 0.3 ms

Response Fall Time A

V

e

1.0, R

L

e

10 kX

Overshoot V

O

e

50 mV,

5.0 5.0 %

A

V

e

1.0, R

L

e

10 kX

BW Bandwidth V

O

e

50 mV,

1.0 1.0 MHz

A

V

e

1.0, R

L

e

10 kX

SR Slew Rate V

I

eb

10V toa10V,

0.6 0.6 V/ms

A

V

e

1.0

2

LM3303 and LM3403 (Continued)

Electrical Characteristics T

A

e

25§C, V

CC

e

g

15V, unless otherwise specified

The following specifications apply forb40§CsT

A

s

a

85§C for the LM3303, and 0§CsT

A

s

a

70§C for the LM3403

Symbol Parameter Conditions

LM3303 LM3403

Units

Min Typ Max Min Typ Max

V

IO

Input Offset Voltage 10 10 mV

DVIO/DT Input Offset Voltage

10 10 mV/

§

C

Temperature Sensitivity

I

IO

Input Offset Current 250 200 nA

DIIO/DT Input Offset Current

50 50 pA/

§

C

Temperature Sensitivity

I

IB

Input Bias Current 1000 800 nA

A

VS

Large Signal Voltage Gain V

O

e

g

10V,

15 15 V/mV

R

L

t

2.0 kX

V

OP

Output Voltage Swing R

L

e

2.0 kXg10

g

10 V

LM3303 and LM3403 Electrical Characteristics

T

A

e

25§C, Vae5.0V, VbeGND, unless otherwise specified

Symbol Parameter Conditions

LM3303 LM3403

Units

Min Typ Max Min Typ Max

V

IO

Input Offset Voltage 8.0 2.0 8.0 mV

I

IO

Input Offset Current 75 30 50 nA

I

IB

Input Bias Current 500 200 500 nA

I

CC

Supply Current 2.5 7.0 2.5 7.0 mA

PSRR Power Supply

150 150 mV/V

Rejection Ratio

A

VS

Large Signal Voltage Gain R

L

t

2.0 kX 20 200 20 200 V/mV

V

OP

Output Voltage Swing R

L

e

10 kX 3.3 3.3

(Note 5)

5.0VsV

a

s

30V, (Va)(V

a

)

V

R

L

e

10 kX

b

2.0

b

2.0

CS Channel Separation 1.0 Hzsfs20 kHz

b

120

b

120 dB

(Input Referenced)

Note 1: T

J Max

e

150§C for the Molded DIP and SO-14, and 175§C for the Ceramic DIP.

Note 2: Ratings apply to ambient temperature at 25

§

C. Above this temperature, derate the 14L-Ceramic DIP at 9.1 mW/§C, the 14L-Molded DIP at 8.3 mW/§C, and

the SO-14 at 7.5 mW/

§

C.

Note 3: For supply voltage less than 30V between V

a

and Vb, the absolute maximum input voltage is equal to the supply voltage.

Note 4: Not to exceed maximum package power dissipation.

Note 5: Output will swing to ground.

3

Typical Performance Characteristics

Frequency Response

Open Loop

Sine Wave Response vs Frequency

Output Voltage

Supply Voltage

Output Swing vs

vs Temperature

Input Bias Current

vs Supply Voltage

Input Bias Current

TL/H/10064– 3

4

Typical Applications

Multiple Feedback Bandpass Filter

TL/H/10064– 4

f

o

e

center frequency

BW

e

Bandwidth RinkX CinmF

Q

e

f

o

BW

k

10

C1

eC2e

Q

3

R1

eR2e

1R3e9Q

2

b

1(Using scaling factors in these expressions.

If source impedance is high or varies, filter may be preceded with voltage follower buffer to stabilize filter parameters.

Design example:

given: Q

e

5, f

o

e

1 kHz

Let R1

e

R2e10 kX

then R3

e

9(5)

2

b

10

R3

e

215 kX

C

e

5

3

e

1.6 nF

Wein Bridge Oscillator

TL/H/10064– 5

f

o

e

1

2qRC

for f

o

e

1 kHz

R

e

16 kX

C

e

0.01 mF

Comparator with Hysteresis

TL/H/10064– 6

V

IL

e

R1

R1aR2

(V

OL

b

V

REF

)aV

REF

V

IH

e

R1

R1aR2

(V

OH

b

V

REF

)aV

REF

H

e

R1

R1aR2

(V

OH

b

VOL)

High Impedance Differential Amplifier

TL/H/10064– 7

V

OUT

e

C(1aaab)(V2bV1)

R2

R5

A

R6

R7

for best CMRR

R1

e

R4

R2

e

R5

Gain

e

R6

R5

#

1

a

2R1

R3

J

e

C(1aaab)

AC Coupled Non-Inverting Amplifier

TL/H/10064– 9

A

V

e1a

R2

R1

A

V

e

11 (as shown)

5

Typical Applications (Continued)

AC Coupled Inverting Amplifier

TL/H/10064– 8

A

V

e

Rf

R1

A

V

e

10 (as shown)

Voltage Reference

TL/H/10064– 10

V

O

e

R1

R1aR2

#

e

V

a

2

as shown

J

V

O

e

1

2

V

a

Ground Referencing a

Differential Input Signal

TL/H/10064– 11

Pulse Generator

TL/H/10064– 14

Voltage Controlled Oscillator

TL/H/10064– 12

Note 1: Wide Control Voltage Range:

0V

s

V

CO

s

2(Vg1.5V)

6

Typical Applications (Continued)

Function Generator

TL/H/10064– 13

Note 2: f

e

R1aR2

4CRfR1

if R3

e

R2R1

R2aR1

Bi-Quad Filter

TL/H/10064– 15

Q

e

BW

f

o

where:

T

BP

e

Center Frequency Gain

T

N

e

Bandpass Notch Gain

f

o

e

1

2qRC

,V

REF

e

1

2

V

CC

R1eQR

R2

e

R1

T

BP

R3eTNR2 C1

e

10 C

Example:

f

o

e

1000 Hz

BW

e

100 Hz

T

BP

e

1

T

N

e

1

R

e

160 kX

R1

e

1.6 MX

R2

e

1.6 MX

R3

e

1.6 MX

C

e

0.001 mF

7

8

Physical Dimensions inches (millimeters)

14-Lead Ceramic Dual-In-Line Package (J)

Order Number LM3303J or LM3403J

NS Package Number J14A

14-Lead Molded Surface Mount (M)

Order Number LM3403M

NS Package Number M14A

9

LM3303/LM3403 Quad Operational Amplifiers

Physical Dimensions inches (millimeters) (Continued)

14-Lead Molded Dual-In-Line Package (N)

Order Number LM3303N or LM3403N

NS Package Number N14A

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