Datasheet LM313H Datasheet (NSC)

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LM113/LM313 Reference Diode
LM113/LM313 Reference Diode
December 1994
General Description
The LM113/LM313 are temperature compensated, low volt­age reference diodes. They feature extremely-tight regula­tion over a wide range of operating currents in addition to an unusually-low breakdown voltage and good temperature stability.
The diodes are synthesized using transistors and resistors in a monolithic integrated circuit. As such, they have the same low noise and long term stability as modern IC op amps. Further, output voltage of the reference depends only on highly-predictable properties of components in the IC; so they can be manufactured and supplied to tight tolerances.
Features
Y
Low breakdown voltage: 1.220V
Schematic and Connection Diagrams
Y
Dynamic impedance of 0.3X from 500 mAto20mA
Y
Temperature stability typically 1% overb55§Cto125§C range (LM113), 0
Y
Tight tolerance:g5%,g2% org1%
The characteristics of this reference recommend it for use in bias-regulation circuitry, in low-voltage power supplies or in battery powered equipment. The fact that the breakdown voltage is equal to a physical property of siliconÐthe ener­gy-band gap voltageÐmakes it useful for many tempera­ture-compensation and temperature-measurement func­tions.
Cto70§C (LM313)
§
Metal Can Package
Order Number
LM113H, LM113H/883, LM113-1H, LM113-1H/883, LM113-2H, LM113-2H/883,
See NS Package Number H02A
or LM313H
TL/H/5713– 1
Typical Applications
Low Voltage Regulator
Level Detector for Photodiode
²
Solid tantalum.
TL/H/5713– 2
C
1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.
TL/H/5713
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Absolute Maximum Ratings
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. (Note 3)
Power Dissipation (Note 1) 100 mW
Storage Temperature Range
Lead Temperature
(Soldering, 10 seconds) 300
Operating Temperature Range
LM113 LM313 0
b
65§Ctoa150§C
b
55§Ctoa125§C
Ctoa70§C
§
Electrical Characteristics (Note 2)
Parameter Conditions Min Typ Max Units
Reverse Breakdown Voltage
LM113/LM313 LM113-1 1.210 1.22 1.232 V
e
I
1mA
R
LM113-2 1.195 1.22 1.245 V
Reverse Breakdown Voltage
Change
Reverse Dynamic Impedance
Forward Voltage Drop I
RMS Noise Voltage
0.5 mA
e
I
R
e
I
R
e
F
10 Hz
e
I
R
Reverse Breakdown Voltage 0.5 mAsI
Change with Current T
MIN
Breakdown Voltage Temperature 1.0 mAsI
Coefficient T
Note 1: For operating at elevated temperatures, the device must be derated based on a 150§C maximum junction and a thermal resistance of 80 case or 440
Note 2: These specifications apply for T inch. Kelvin contact sockets are also recommended. The diode should not be operated with shunt capacitances between 200 pF and 0.1 mF, unless isolated by at least a 100X resistor, as it may oscillate at some currents.
Note 3: Refer to the following RETS drawings for military specifications: RETS113-1X for LM113-1, RETS113-2X for LM113-2 or RETS113X for LM113.
C/W junction to ambient.
§
e
25§C, unless stated otherwise. At high currents, breakdown voltage should be measured with lead lengths less than (/4
A
MIN
s
s
I
20 mA 6.0 15 mV
R
1 mA 0.2 1.0 X 10 mA 0.25 0.8 X
1.0 mA 0.67 1.0 V
sfs
10 kHz
1mA
s
10 mA
R
s
s
T
T
A
MAX
s
10 mA
R
s
s
T
T
A
MAX
1.160 1.220 1.280 V
5 mV
15 mV
0.01 %/
C/W junction to
§
C
§
C
§
Typical Performance Characteristics
Temperature Drift Reverse Dynamic Impedance Reverse Characteristics
TL/H/5713– 3
2
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Typical Performance Characteristics (Continued)
Reverse Characteristics Reverse Dynamic Impedance Noise Voltage
Forward Characteristics Response Time Maximum Shunt Capacitance
Typical Applications (Continued)
TL/H/5713– 4
Amplifier Biasing for Constant Gain with Temperature
Thermometer
*Adjust for 0V at 0§C
²
3
Constant Current Source
Adjust for 100 mV/§C
TL/H/5713– 5
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Physical Dimensions inches (millimeters)
LM113/LM313 Reference Diode
Order Number LM113H, LM113H/883, LM113-1H, LM113-1H/883,
LM113-2H, LM113-2H/883 or LM313H
NS Package Number H02A
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