Datasheet LM3046MX, LM3046M Datasheet (NSC)

LM3046
Transistor Array

General Description

The LM3046 consists of five general purpose silicon NPN
transistors on a common monolithic substrate. Two of the
transistors are internally connected to form a
differentially-connected pair. The transistors are well suited
to a wide variety of applications in low power system in the
DC through VHF range. They maybe used as discrete tran­sistors in conventional circuits however, in addition, they pro­vide the very significant inherent integrated circuit advan­tages of close electrical and thermal matching. The LM3046
is supplied in a 14-lead molded dual-in-line package.

Features

n Two matched pairs of transistors

V

BE

matched±5mV

Input offset current 2 µA max at I

C

=

1mA

n Five general purpose monolithic transistors
n Operation from DC to 120 MHz
n Wide operating current range
n Low noise figure: 3.2 dB typ at 1 kHz

Applications

n General use in all types of signal processing systems

operating anywhere in the frequency range from DC to
VHF

n Custom designed differential amplifiers
n Temperature compensated amplifiers

Schematic and Connection Diagram

Small Outline Package

DS007950-1

Top View

Order Number LM3046M

See NS Package Number M14A

July 1999

LM3046 Transistor Array

© 1999 National Semiconductor Corporation DS007950 www.national.com

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/
Distributors for availability and specifications. (T

A

=

25˚C)

LM3046

Each Total Units

Transistor Package

Power Dissipation:

T

A

=

25˚C 300 750 mW

T

A

=

25˚C to 55˚C 300 750 mW

T

A

>

55˚C Derate at 6.67 mW/˚C

T

A

=

25˚C to 75˚C mW

T

A

>

75˚C mW/˚C

Collector to Emitter Voltage, V

CEO

15 V

Collector to Base Voltage, V

CBO

20 V

Collector to Substrate Voltage, V

CIO

(Note 2) 20 V

Emitter to Base Voltage, V

EBO

5V

Collector Current, I

C

50 mA
Operating Temperature Range −40˚C to +85˚C
Storage Temperature Range −65˚C to +85˚C
Soldering Information

Dual-In-Line Package Soldering (10 Sec.) 260˚C
Small Outline Package
Vapor Phase (60 Seconds) 215˚C
Infrared (15 Seconds) 220˚C

SeeAN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount de­vices.

Electrical Characteristics

(T

A

=

25˚C unless otherwise specified)

Parameter Conditions

Limits

Units

Min Typ Max

Collector to Base Breakdown Voltage (V

(BR)CBO

)I

C

=

10 µA, I

E

=

02060V

Collector to Emitter Breakdown Voltage (V

(BR)CEO

)I

C

=

1 mA, I

B

=

01524V

Collector to Substrate Breakdown I

C

=

10 µA, I

CI

=

02060V

Voltage (V

(BR)CIO

)

Emitter to Base Breakdown Voltage (V

(BR)EBO

)I

E

10 µA, I

C

=

057V

Collector Cutoff Current (I

CBO

)V

CB

=

10V, I

E

=

0 0.002 40 nA

Collector Cutoff Current (I

CEO

)V

CE

=

10V, I

B

=

0 0.5 µA

Static Forward Current Transfer V

CE

=

3V I

C

=

10 mA 100

Ratio (Static Beta) (h

FE

)I

C

=

1 mA 40 100

I

C

=

10 µA 54

Input Offset Current for Matched V

CE

=

3V, I

C

=

1 mA 0.3 2 µA

Pair Q

1

and Q2|IO1−I

IO2

|

Base to Emitter Voltage (V

BE

)V

CE

=

3V I

E

=

1 mA 0.715 V

I

E

=

10 mA 0.800

Magnitude of Input Offset Voltage for V

CE

=

3V, I

C

=

1 mA 0.45 5 mV

Differential Pair |V

BE1−VBE2

|

Magnitude of Input Offset Voltage for Isolated
Transistors |V

BE3−VBE4

|, |V

BE4−VBE5

|,

|V

BE5−VBE3

|

V

CE

=

3V, I

C

=

1 mA 0.45 5 mV

Temperature Coefficient of Base to

Emitter Voltage

V

CE

=

3V, I

C

=

1 mA −1.9 mV/˚C

Collector to Emitter Saturation Voltage (V

CE(SAT)

)I

B

=

1 mA, I

C

=

10 mA 0.23 V

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Electrical Characteristics (Continued)

(T

A

=

25˚C unless otherwise specified)

Parameter Conditions

Limits

Units

Min Typ Max

Temperature Coefficient of

Input Offset Voltage

V

CE

=

3V, I

C

=

1 mA 1.1 µV/˚C

Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.

Note 2: The collector of each transistor is isolated from the substrate by an integral diode. The substrate (terminal 13) must be connected to the most negative point
in the external circuit to maintain isolation between transistors and to provide for normal transistor action.

Electrical Characteristics

Parameter Conditions Min Typ Max Units

Low Frequency Noise Figure (NF) f=1 kHz, V

CE

=

3V, 3.25 dB

I

C

=

100 µA, R

S

=

1kΩ

LOW FREQUENCY, SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS

Forward Current Transfer Ratio (h

fe

)f

=

1 kHz, V

CE

=

3V, 110

I

C

=

1mA

Short Circuit Input Impednace (h

ie

) 3.5 kΩ

Open Circuit Output Impedance (h

oe

) 15.6 µmho

Open Circuit Reverse Voltage Transfer Ratio
(h

re

)

1.8x10

−4

ADMITTANCE CHARACTERISTICS

Forward Transfer Admittance (Y

fe

)f

=

1 MHz, V

CE

=

3V, 31 − j 1.5

Input Admittance (Y

ie

)I

C

=

1 mA 0.3+J 0.04

Output Admittance (Y

oe

) 0.001+j 0.03

Reverse Transfer Admittance (Y

re

) See Curve

Gain Bandwidth Product (f

T

)V

CE

=

3V, I

C

=

3 mA 300 550

Emitter to Base Capacitance (C

EB

)V

EB

=

3V, I

E

=

0 0.6 pF

Collector to Base Capacitance (C

CB

)V

CB

=

3V, I

C

=

0 0.58 pF

Collector to Substrate Capacitance (C

CI

)V

CS

=

3V, I

C

=

0 2.8 pF

Typical Performance Characteristics

Typical Collector To Base
Cutoff Current vs Ambient
Temperature for Each
Transistor

DS007950-8

Typical Collector To Emitter
Cutoff Current vs Ambient
Temperature for Each
Transistor

DS007950-9

Typical Static Forward
Current-Transfer Ratio and
Beta Ratio for Transistors Q

1

and Q2vs Emitter Current

DS007950-10

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Typical Performance Characteristics (Continued)

Typical Input Offset Current
for Matched Transistor Pair
Q

1Q2

vs Collector Current

DS007950-11

Typical Static Base To Emitter
Voltage Characteristic and Input
Offset Voltage for Differential
Pair and Paired Isolated
Transistors vs Emitter Current

DS007950-12

Typical Base To Emitter
Voltage Characteristic for
Each Transistor vs Ambient
Temperature

DS007950-13

Typical Input Offset Voltage
Characteristics for Differential
Pair and Paired Isolated
Transistors vs Ambient
Temperature

DS007950-14

Typical Noise Figure vs
Collector Current

DS007950-15

Typical Noise Figure vs
Collector Current

DS007950-16

Typical Noise Figure vs
Collector Current

DS007950-17

Typical Normalized Forward
Current Transfer Ratio, Short
Circuit Input Impedance,
Open Circuit Output Impedance,
and Open Circuit Reverse
Voltage Transfer Ratio vs
Collector Current

DS007950-18

Typical Forward Transfer
Admittance vs Frequency

DS007950-19

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Typical Performance Characteristics (Continued)

Typical Input Admittance
vs Frequency

DS007950-20

Typical Output Admittance
vs Frequency

DS007950-21

Typical Reverse Transfer
Admittance vs Frequency

DS007950-22

Typical Gain-Bandwidth
Product vs Collector Current

DS007950-23

www.national.com5

Physical Dimensions inches (millimeters) unless otherwise noted

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www.national.com

Molded Small Outline Package (M)

Order Number LM3046M

NS Package Number M14A

LM3046 Transistor Array

National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.