Design Procedure (Continued)
current to be 30%of the dc output current. Since the ripple
current increase with the input voltage, the maximum input
voltage is always used to determine the inductance. The dc
resistance of the inductor is a key parameter for the efficiency. Lower dc resistance is available with a bigger winding area. A good tradeoff between theefficiency and thecore
size is letting theinductor copperloss equalto 2%of the output power.
Input Capacitor
A low ESR aluminum or tantalum capacitor is needed between the drain ofthe high-sideMOSFET and groundto prevent large voltage transients from appearing at the input.
The capacitor is selected based on the RMS current and
voltage requirements. The RMS current is given by:
The RMS current reaches its maximum (I
OUT
/2) when V
IN
equals 2V
OUT
. A parallel of several capacitors may be required to meet the RMS current rating. For an aluminum capacitor,the voltagerating shouldbe atleast 25%higher than
the maximum input voltage. If a tantalum capacitor is used,
the voltage rating should be about twice the maximum input
voltage. The tantalum capacitorshould also besurge current
tested by the manufacturer. It is also recommended to put a
small ceramic capacitor (0.1 µF) between the V
IN
pin and
ground.
Output Capacitor
The selection of C
OUT
is driven by the maximum allowable
output voltage ripple. The outputripple inFPWM mode isapproximated by:
The ESR term plays the dominant role in determining the
voltage ripple. Low ESR aluminum electrolytic or tantalum
capacitors (such as Nichicon PL series, Sanyo OS-CON,
Sprague 593D, 594D, and AVX TPS) are recommended.
Electrolytic capacitors are not recommendedfor temperature
below −25˚C since their ESR rises dramatically at cold temperature. Tantalum capacitors have a much better ESR
specification at cold temperatures and are preferred for low
temperature applications.
Power MOSFETs
TwoN-channel logic-levelMOSFETsare requiredfor this application. MOSFETs with low on-resistance and total gate
charge are recommended to achieve high efficiency. The
drain-source breakdown voltage ratings are recommended
to be 1.2 times the maximum input voltage.
Schottky Diode D
1
The Schottky diode D1is used to prevent the intrinsic body
diode of the low-side MOSFET Q
2
from conducting during
the dead time when both MOSFETs are off. Since the forward voltage of D
1
is less than thebody diode,efficiency can
be improved. The breakdown voltage rating of D
1
is preferred to be 25%higher than the maximum input voltage.
Since D
1
is only on for a short period of time (about 200 ns
each cycle), the average current rating for D
1
only requires
to be higher than 30%of the maximum output current. It is
important to place D
1
very close to the drain and source of
Q
2
, extra parasitic inductance in the parallel loop will slow
the turn-on of D
1
and direct the current through the body di-
ode of Q
2
.
R
1
and R2(Programming Output Voltage)
Use the following formula to select the appropriate resistor
values:
V
OUT
=
V
REF
(1+R1/R2)
where V
REF
=
1.238V
Select a value for R
2
between 10kΩ and 100kΩ. (Use 1%or
higher accuracy metal film resistors).
Current sense resistor
The value of the sense resistor is determined by the minimum current limit voltage and the maximum peak current. It
can be calculated as follows:
where TF is the tolerance factor of the sense resistor.
PCB Layout Considerations
Layout is critical to reduce noises and ensure specified performance. The important guidelines are listed as follows:
1. Minimize the parasiticinductance in the loop of input ca-
pacitors and MOSFETS: Q1, Q2by using wideand short
traces. This is important because the rapidly switching
current, together with wiring inductance can generate
large voltage spikes which can cause noise problems.
2. Always minimize the high-current groundtraces: such as
the traces from PGND pin to the source of Q2, then to
the negative terminals of the output capacitors.
3. Use dedicated (Kelvin sense) and short traces from
CSH, CSL pins to the sense resistor, R3. Keep these
traces away from noise traces (such as SW trace, and
gate traces).
4. Minimize the traces connecting Q2 and the Schottky di-
ode. Any parasitic inductance in the loop can delay the
turn-on of the Schottky diode, which diminishes the efficiency gain from adding D1.
5. Minimize the traces from drivers (HDRV pin and LDRV
pin) to the MOSFETs gates.
6. Minimize the trace from the center of the output resistor
divider to the FB pin and keep it away from noise
sources to avoid noise pickup. A dedicated sense trace
(separated from the power trace) can be used to connect the top of the resistor divider to the output. The
sense trace ensures tight regulation at the output.
Application Circuits
Atypical applicationcircuit is shownin
Figure 2
, with some of
the components values shown in
Table 1
.
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