Datasheet LM194MDS Datasheet (NSC)

TL/H/9241

LM194/LM394 Supermatch Pair

December 1994

LM194/LM394 Supermatch Pair

General Description

The LM194 and LM394 are junction isolated ultra well­matched monolithic NPN transistor pairs with an order of
magnitude improvement in matching over conventional tran­sistor pairs. This was accomplished by advanced linear pro­cessing and a unique new device structure.

Electrical characteristics of these devices such as drift ver­sus initial offset voltage, noise, and the exponential relation­ship of base-emitter voltage to collector current closely ap­proach those of a theoretical transistor. Extrinsic emitter
and base resistances are much lower than presently avail­able pairs, either monolithic or discrete, giving extremely low
noise and theoretical operation over a wide current range.
Most parameters are guaranteed over a current range of
1 mA to 1 mA and 0V up to 40V collector-base voltage,
ensuring superior performance in nearly all applications.

To guarantee long term stability of matching parameters,
internal clamp diodes have been added across the emitter­base junction of each transistor. These prevent degradation
due to reverse biased emitter currentÐthe most common
cause of field failures in matched devices. The parasitic iso­lation junction formed by the diodes also clamps the sub­strate region to the most negative emitter to ensure com­plete isolation between devices.

The LM194 and LM394 will provide a considerable improve­ment in performance in most applications requiring a closely

matched transistor pair. In many cases, trimming can be
eliminated entirely, improving reliability and decreasing
costs. Additionally, the low noise and high gain make this
device attractive even where matching is not critical.

The LM194 and LM394/LM394B/LM394C are available in
an isolated header 6-lead TO-5 metal can package. The
LM394/LM394B/LM394C are available in an 8-pin plastic
dual-in-line package. The LM194 is identical to the LM394
except for tighter electrical specifications and wider temper­ature range.

Features

Y

Emitter-base voltage matched to 50 mV

Y

Offset voltage drift less than 0.1 mV/§C

Y

Current gain (hFE) matched to 2%

Y

Common-mode rejection ratio greater than 120 dB

Y

Parameters guaranteed over 1 mA to 1 mA collector
current

Y

Extremely low noise

Y

Superior logging characteristics compared to
conventional pairs

Y

Plug-in replacement for presently available devices

Typical Applications

Low Cost Accurate Square Root Circuit

I

OUT

e

10

b

5

.010 V

IN

TL/H/9241– 1

Low Cost Accurate Squaring Circuit

I

OUT

e

10

b

6

(VIN)

2

TL/H/9241– 2

*Trim for full scale accuracy

C

1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.

Absolute Maximum Ratings

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
(Note 4)

Collector Current 20 mA

Collector-Emitter Voltage V

MAX

Collector-Emitter Voltage 35V

LM394C 20V

Collector-Base Voltage 35V

LM394C 20V

Collector-Substrate Voltage 35V

LM394C 20V

Collector-Collector Voltage 35V

LM394C 20V

Base-Emitter Current

g

10 mA

Power Dissipation 500 mW

Junction Temperature

LM194

b

55§Ctoa125§C

LM394/LM394B/LM394C

b

25§Ctoa85§C

Storage Temperature Range

b

65§Ctoa150§C

Soldering Information

Metal Can Package (10 sec.) 260

§

C

Dual-In-Line Package (10 sec.) 260

§

C

Small Outline Package

Vapor Phase (60 sec.) 215

§

C

Infrared (15 sec.) 220

§

C

See AN-450 ‘‘Surface Mounting and their Effects on Prod­uct Reliability’’ for other methods of soldering surface
mount devices.

Electrical Characteristics (T

J

e

25§C)

Parameter Conditions

LM194 LM394 LM394B/394C

Units

Min Typ Max Min Typ Max Min Typ Max

Current Gain (hFE)V

CB

e

0V to V

MAX

(Note 1)

I

C

e

1 mA 350 700 300 700 225 500

I

C

e

100 mA 350 550 250 550 200 400

I

C

e

10 mA 300 450 200 450 150 300

I

C

e

1 mA 200 300 150 300 100 200

Current Gain Match, V

CB

e

0V to V

MAX

(hFEMatch) I

C

e

10 mA to 1 mA 0.5 2 0.5 4 1.0 5 %

e

100[DI

B

][

h

FE(MIN)

]

I

C

I

C

e

1 mA 1.0 1.0 2.0 %

Emitter-Base Offset V

CB

e

0

25 100 25 150 50 200 mV

Voltage I

C

e

1 mAto1mA

Change in Emitter-Base (Note 1)
Offset Voltage vs I

C

e

1 mAto1mA,

10 25 10 50 10 100 mV

Collector-Base Voltage V

CB

e

0V to V

MAX

(CMRR)

Change in Emitter-Base V

CB

e

0V,

525 550 550 mV

Offset Voltage vs I

C

e

1 mA to 0.3 mA

Collector Current

Emitter-Base Offset I

C

e

10 mA to 1 mA (Note 2)

0.08 0.3 0.08 1.0 0.2 1.5 mV/

§

C

Voltage Temperature I

C1

e

I

C2

Drift VOSTrimmed to 0 at 25§C 0.03 0.1 0.03 0.3 0.03 0.5 mV/§C

Logging Conformity I

C

e

3nAto300mA,

150 150 150 mV

V

CB

e

0, (Note 3)

Collector-Base Leakage V

CB

e

V

MAX

0.05 0.25 0.05 0.5 0.05 0.5 nA

Collector-Collector V

CC

e

V

MAX

0.1 2.0 0.1 5.0 0.1 5.0 nA

Leakage

Input Voltage Noise I

C

e

100 mA, V

CB

e

0V,

1.8 1.8 1.8 nV/

0

Hz

f

e

100 Hz to 100 kHz

Collector to Emitter I

C

e

1 mA, I

B

e

10 mA 0.2 0.2 0.2 V

Saturation Voltage I

C

e

1 mA, I

B

e

100 mA 0.1 0.1 0.1 V

Note 1: Collector-base voltage is swept from 0 to V

MAX

at a collector current of 1 mA, 10 mA, 100 mA, and 1 mA.

Note 2: Offset voltage drift with V

OS

e

0atT

A

e

25§C is valid only when the ratio of IC1to IC2is adjusted to give the initial zero offset. This ratio must be held to

within 0.003% over the entire temperature range. Measurements taken at

a

25§C and temperature extremes.

Note 3: Logging conformity is measured by computing the best fit to a true exponential and expressing the error as a base-emitter voltage deviation.

Note 4: Refer to RETS194X drawing of military LM194H version for specifications.

2

Typical Applications (Continued)

Fast, Accurate Logging Amplifier, V

IN

e

10V to 0.1 mV or I

IN

e

1mAto10nA

TL/H/9241– 3

*1kX(g1%) at 25§C,a3500 ppm/§C.

Available from Vishay Ultronix,
Grand Junction, CO, Q81 Series.

V

OUT

eb

log

10

#

V

IN

V

REF

J

Voltage Controlled Variable Gain Amplifier

TL/H/9241– 4

*R8– R10 and D2 provide a temperature Distortionk0.1%

independent gain control. Bandwidth

l

1 MHz

G

eb

336 V1 (dB) 100 dB gain range

3

Typical Applications (Continued)

Precision Low Drift Operational Amplifier

Common-mode range 10V

I

BIAS

25 nA

I

OS

0.5 nA

V

OS

(untrimmed) 125 mV

(DV

OS

/DT) 0.2 mV/C

CMRR 120 dB

A

VOL

2,500,000

*C 200 pF for unity gain

C 30 pF for A

V

10

C 5 pF for A

V

100

TL/H/9241– 5

C 0 pF for AV1000

High Accuracy One Quadrant Multiplier/Divider

TL/H/9241– 6

V

OUT

e

(X) (Y)

(Z)

; positive inputs only.

*Typical linearity 0.1%

4

Typical Applications (Continued)

High Performance Instrumentation Amplifier

*Gain

e

10

6

R

S

TL/H/9241– 7

Performance Characteristics

Ge10,000 Ge1,000 Ge100 Ge10

Linearity of Gain (

g

10V Output)

s

0.01

s

0.01s0.02s0.05 %

Common-Mode Rejection Ratio (60 Hz)

t

120

t

120t110t90 dB

Common-Mode Rejection Ratio (1 kHz)

t

110

t

110t90t70 dB

Power Supply Rejection Ratio

a

Supply

l

110

l

110l110l110 dB

b

Supply

l

110

l

110l90l70 dB

Bandwidth (

b

3 dB) 50 50 50 50 kHz
Slew Rate 0.3 0.3 0.3 0.3 V/ms
Offset Voltage Drift**

s

0.25

s

0.4 2

s

10 mV/§C

Common-Mode Input Resistance

l

10

9

l

10

9

l

10

9

l

109X

Differential Input Resistance

l

3x10

8

l

3x10

8

l

3x10

8

l

3x108X

Input Referred Noise (100 Hz

sfs

10 kHz) 5 6 12 70

nV

0

Hz

Input Bias Current 75 75 75 75 nA
Input Offset Current 1.5 1.5 1.5 1.5 nA
Common-Mode Range

g

11

g

11

g

11g10 V

Output Swing (R

L

e

10 kX)

g

13

g

13

g

13g13 V

**Assumess5 ppm/§C tracking of resistors

5

Typical Performance Characteristics

Small Signal Current Gain vs
Collector Current DC Current Gain vs Temperature

Unity Gain Frequency (ft)vs
Collector Current

Offset Voltage Drift vs Initial
Offset Voltage

Base-Emitter On Voltage vs
Collector Current

Resistance (h

ie

)

Small Signal Input

vs Collector Current

vs Collector Current

Small Signal Output Conductance

vs Collector Current

Saturation Voltage

Collector-Emitter

Frequency

Input Voltage Noise vs

vs Frequency

Base Current Noise

Collector Current

Noise Figure vs

Bias Voltage

Capacitance vs Reverse

Collector to Collector

TL/H/9241– 8

6

Typical Performance Characteristics (Continued)

Collector to Collector Capacitance
vs Collector-Substrate Voltage

Emitter-Base Capacitance vs
Reverse Bias Voltage

Collector-Base Capacitance vs
Reverse Bias Voltage

Collector-Base Leakage vs
Temperature

Collector to Collector Leakage
vs Temperature

Offset Voltage Long Term
Stability at High Temperature

TL/H/9241– 9

Emitter-Base Log Conformity

TL/H/9241– 10

Low Frequency Noise of Differential Pair*

TL/H/9241– 11

*Unit must be in still air environment so that differential

lead temperature is held to less than 0.0003

§

C.

7

Connection Diagrams

Metal Can Package

TL/H/9241– 12

Top View

Order Number LM194H/883*,

LM394H, LM394BH or LM394CH

See NS Package Number H06C

Dual-In-Line and Small Outline Packages

TL/H/9241– 13

Top View

Order Number LM394N or LM394CN

See NS Package Number N08E

*Available per SMDÝ5962-8777701

8

Physical Dimensions inches (millimeters)

Metal Can Package (H)

Order Number LM194H/883, LM394H, LM394BH or LM394CH

NS Package Number H06C

9

LM194/LM394 Supermatch Pair

Physical Dimensions inches (millimeters) (Continued)

Molded Dual-In-Line Package (N)

Order Number LM394CN or LM394N

NS Package Number N08E

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