The LM10 series are monolithic linear ICs consisting of a
precision reference, an adjustable reference buffer and an
independent, high quality op amp.
The unit can operate from a total supply voltage as low as
1.1V or as high as 40V, drawing only 270µA. A complementary output stage swings within 15 mV of the supply terminals or will deliver
ration. Reference output can be as low as 200 mV.
The circuit is recommended for portable equipment and is
completely specified for operation from a single power cell.
In contrast, high output-drive capability, both voltage and
current, along with thermal overload protection, suggest it in
demanding general-purpose applications.
The device is capable of operating in a floating mode, independent of fixed supplies. It can function as a remote comparator, signal conditioner, SCR controller or transmitter for
±
20 mA output current with±0.4V satu-
analog signals, delivering the processed signal on the same
line used to supply power. It is also suited for operation in a
wide range of voltage- and current-regulator applications,
from low voltages to several hundred volts, providing greater
precision than existing ICs.
This series is available in the three standard temperature
ranges, with the commercial part having relaxed limits. In
addition, a low-voltage specification (suffix “L”) is available in
the limited temperature ranges at a cost savings.
Features
n input offset voltage:2.0 mV (max)
n input offset current: 0.7 nA (max)
n input bias current: 20 nA (max)
n reference regulation: 0.1% (max)
n offset voltage drift: 2µV/˚C
n reference drift: 0.002%/˚C
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
LM10/LM10B/LM10BL/
LM10C LM10CL
Total Supply Voltage45V7V
Differential Input Voltage (Note 2)
±
40V
Power Dissipation (Note 3)internally limited
Output Short-circuit Duration (Note
continuous
4)
Storage-Temp. Range−55˚C to +150˚C
Lead Temp. (Soldering, 10 seconds)
Metal Can300˚C
Lead Temp. (Soldering, 10
260˚C
seconds) DIP
±
7V
See AN-450 “Surface Mounting Methods and Their Effect on
Product Reliability” for other methods of soldering surface
mount devices.
ESD rating is to be determined.
Maximum Junction Temperature
LM10150˚C
LM10B100˚C
LM10C85˚C
Operating Ratings
Package Thermal Resistance
θ
JA
H Package150˚C/W
N Package87˚C/W
WM Package90˚C/W
θ
JC
H Package45˚C/W
Vapor Phase (60 seconds)215˚C
Infrared (15 seconds)220˚C
Electrical Characteristics
TJ=25˚C, T
MIN≤TJ≤TMAX
ParameterConditionsLM10/LM10BLM10CUnits
Input offset voltage0.32.00.54.0mV
Input offset current0.250.70.42.0nA
(Note 6)1.53.0nA
Input bias current10201230nA
Input resistance250500150400kΩ
Large signal voltageV
gainV
Shunt gain (Note 7)1.2V (1.3V) ≤V
Common-mode−20V≤V
rejectionV
Supply-voltage−0.2V≥V
rejectionV
Offset voltage drift2.05.0µV/˚C
Offset current drift2.05.0pA/˚C
Bias current driftT
(Boldface type refers to limits over temperature range) (Note 5)
MinTypMaxMinTypMax
3.05.0mV
3040nA
150115kΩ
=±20V, I
S
=±19.95V8050V/mV
OUT
V
=±20V, V
S
I
=±20 mA (±15 mA)2015V/mV
OUT
V
=±0.6V (0.65V), I
S
V
=±0.4V (±0.3V), VCM=−0.4V0.50.75V/mV
OUT
R
=1.1 kΩ
L
0.1 mA≤I
+
1.5V≤V
0.1 mA≤I
=±20V8787dB
S
+
=1.0V (1.1V)8484dB
1.0V (1.1V) ≤V
−
V
=−0.2V9090dB
<
100˚C6090pA/˚C
C
=012040080400V/mV
OUT
=±19.4V5013025130V/mV
OUT
=±2 mA1.53.01.03.0V/mV
OUT
≤40V,14331033V/mV
OUT
≤5mA66V/mV
OUT
≤40V, RL=250Ω825625V/mV
≤20 mA44V/mV
OUT
≤19.15V (19V)9310290102dB
CM
−
≥−39V90968796dB
+
≤39.8V9610693106dB
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Page 3
Electrical Characteristics (Continued)
TJ=25˚C, T
MIN≤TJ≤TMAX
ParameterConditionsLM10/LM10BLM10CUnits
Line regulation1.2V (1.3V) ≤V
Load regulation0≤I
Amplifier gain0.2V≤V
Feedback sense195200205190200210mV
voltage194206189211mV
Feedback current20502275nA
Reference drift0.0020.003%/˚C
Supply current270400300500µA
Supply current
change
(Boldface type refers to limits over temperature range) (Note 5)
MinTypMaxMinTypMax
≤40V0.0010.0030.0010.008%/V
S
0≤I
≤1.0 mA, V
REF
≤1.0 mA0.010.10.010.15%
REF
+
V
−V
≥1.0V (1.1V)0.150.2%
REF
≤35V50752570V/mV
REF
=200 mV0.0060.01%/V
REF
2315V/mV
6590nA
500570µA
1.2V (1.3V) ≤V
≤40V15751575µA
S
Electrical Characteristics
TJ=25˚C, T
MIN≤TJ≤TMAX
ParameterConditionsLM10BLLM10CLUnits
Input offset voltage0.32.00.54.0mV
Input offset current0.10.70.22.0nA
(Note 6)1.53.0nA
Input bias current10201230nA
Input resistance250500150400kΩ
Large signal voltageV
gainV
Shunt gain (Note 7)1.5V≤V
Common-mode−3.25V≤V
rejectionV
Supply-voltage−0.2V≥V
rejectionV
Offset voltage drift2.05.0µV/˚C
Offset current drift2.05.0pA/˚C
Bias current drift6090pA/˚C
Line regulation1.2V (1.3V) ≤V
(Boldface type refers to limits over temperature range) (Note 5)
MinTypMaxMinTypMax
3.05.0mV
3040nA
150115kΩ
=±3.25V, I
S
=±3.2V4025V/mV
OUT
V
=±3.25V, I
S
V
=±2.75 V43V/mV
OUT
V
=±0.6V (0.65V), I
S
V
=±0.4V (±0.3V), VCM=−0.4V0.50.75V/mV
OUT
+
≤6.5V, RL=500Ω830630V/mV
0.1 mA≤I
=±3.25V8374dB
S
−
+
=1.0V (1.2V)8074dB
1.0V (1.1V) ≤V
−
V
=0.2V8874dB
0≤I
≤0.5 mA, V
REF
=06030040300V/mV
OUT
=10 mA1025525V/mV
OUT
=±2 mA1.53.01.03.0V/mV
OUT
≤10 mA44V/mV
OUT
≤2.4V (2.25V)8910280102dB
CM
≥−5.4V86968096dB
+
≤6.3V9410680106dB
≤6.5V0.0010.010.0010.02%/V
S
=200 mV0.020.03%/V
REF
LM10
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Page 4
Electrical Characteristics (Continued)
LM10
TJ=25˚C, T
MIN≤TJ≤TMAX
(Boldface type refers to limits over temperature range) (Note 5)
ParameterConditionsLM10BLLM10CLUnits
MinTypMaxMinTypMax
Load regulation0≤I
Amplifier gain0.2V≤V
≤0.5 mA0.010.10.010.15%
REF
+
V
−V
≥1.0V (1.1V)0.150.2%
REF
≤5.5V30702070V/mV
REF
2015V/mV
Feedback sense voltage195200205190200210mV
194206189211mV
Feedback current20502275nA
6590nA
Reference drift0.0020.003%/˚C
Supply current260400280500µA
500570µA
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 2: The Input voltage can exceed the supply voltages provided that the voltage from the input to any other terminal does not exceed the maximum differential
input voltage and excess dissipation is accounted for when V
Note 3: The maximum, operating-junction temperature is 150˚C for the LM10, 100˚C for the LM10B(L) and 85˚C for the LM10C(L). At elevated temperatures,
devices must be derated based on package thermal resistance.
Note 4: Internal thermal limiting prevents excessive heating that could result in sudden failure, but the IC can be subjected to accelerated stress with a shorted
output and worst-case conditions.
Note 5: These specifications apply for V
for the standard part and 6.5V for the low voltage part. Normal typeface indicates 25˚C limits. Boldface type indicates limits and altered test conditions forfull-temperature-range operation; this is −55˚C to 125˚C for the LM10, −25˚C to 85˚C for the LM10B(L) and 0˚C to 70˚C for the LM10C(L). The specifications do
not include the effects of thermal gradients (τ
(see curves).
Note 6: For T
Note 7: This defines operation in floating applications such as the bootstrapped regulator or two-wire transmitter. Output is connected to the V
and input common mode is referred to V
the positive-supply rejection error.
Note 8: Refer to RETS10X for LM10H military specifications.
>
90˚C, IOSmay exceed 1.5 nA for VCM=V−. With TJ=125˚C and V−≤VCM≤V−+0.1V, IOS≤5 nA.
J
−
≤VCM≤V+−0.85V (1.0V), 1.2V (1.3V)<VS≤V
.20 ms), die heating (τ2.0.2s) or package heating. Gradient effects are small and tend to offset the electrical error
1
−
(see typical applications). Effect of larger output-voltage swings with higher load resistance can be accounted for by adding
<
V−.
IN
MAX,VREF
=0.2V and 0≤I
≤1.0 mA, unless otherwise specified: V
REF
+
terminal of the IC
MAX
=40V
Definition of Terms
Input offset voltage: That voltage which must be applied between the input terminals to bias the unloaded output in the linear
region.
Input offset current: The difference in the currents at the input terminals when the unloaded output is in the linear region.
Input bias current: The absolute value of the average of the two input currents.
Input resistance: The ratio of the change in input voltage to the change in input current on either input with the other grounded.
Large signal voltage gain: The ratio of the specified output voltage swing to the change in differential input voltage required to
produce it.
Shunt gain: The ratio of the specified output voltage swing to the change in differential input voltage required to produce it with
the output tied to the V
common-mode is referred to the V
Common-mode rejection: The ratio of the input voltage range to the change in offset voltage between the extremes.
Supply-voltage rejection: The ratio of the specified supply-voltage change to the change in offset voltage between the
extremes.
Line regulation: The average change in reference output voltage over the specified supply voltage range.
Load regulation: The change in reference output voltage from no load to that load specified.
Feedback sense voltage: The voltage, referred to V
Reference amplifier gain: The ratio of the specified reference output change to the change in feedback sense voltage required
to produce it.
Feedback current: The absolute value of the current at the feedback terminal when operating in regulation.
Supply current: The current required from the power source to operate the amplifier and reference with their outputs unloaded
and operating in the linear range.
+
terminal of the IC. The load and power source are connected between the V+and V−terminals, and input
−
terminal.
−
, on the reference feedback terminal while operating in regulation.
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