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DISCRETE SEMICONDUCTORS
DATA SH EET
LLE18150X
NPN silicon planar epitaxial
microwave power transistor
Product specification
File under Discrete Semiconductors, SC15
Philips Semiconductors
September 1994
Page 2
Philips Semiconductors Product specification
NPN silicon planar epitaxial
microwave power transistor
FEATURES
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
• Internal input and output
prematching ensures good stability
and allows an easier design of
wideband circuits.
APPLICATION
Intended for use in common emitter,
class AB amplifiers in CW conditions
for professional applications between
1.7 GHz and 2.0 GHz.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
FO-229 glued cap metal ceramic
flange package, with emitter
connected to flange.
LLE18150X
QUICK REFERENCE DATA
Microwave performance up to T
amplifier.
MODE OF
OPERATIONf(GHz)
V
(V)
Class AB (CW) 1.85 24 0.05 ≥12 ≥7.8 typ. 43 see Figs 6
PINNING - FO-229
PIN DESCRIPTION
1 collector
2 base
3 emitter connected to flange
handbook, 4 columns
Top view
Fig.1 Simplified outline and symbol.
=25°C in a common emitter class AB
mb
CE
I
(A)
1
2
CQ
3
P
L1
(W)
G
po
(dB)
b
MAM112
c
e
η
(%)
C
Zi; Z
(Ω)
and 7
L
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
September 1994 2
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Philips Semiconductors Product specification
NPN silicon planar epitaxial
LLE18150X
microwave power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
i
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.2 mm from ceramic.
collector-base voltage open emitter − 45 V
collector-emitter voltage RBE = 220 Ω−30 V
collector-emitter voltage open base − 22 V
emitter-base voltage open collector − 3V
DC collector current − 3A
input power f = 1.85 GHz; VCE= 24 V; class AB − 4W
total power dissipation Tmb=75°C − 25 W
storage temperature −65 +150 °C
junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C
30
P
tot
(W)
20
10
0
0 50 100 200
Fig.2 Power derating curve.
150
T ( C)
mb
MBD741
o
September 1994 3
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Philips Semiconductors Product specification
NPN silicon planar epitaxial
LLE18150X
microwave power transistor
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-mb
R
th mb-h
CHARACTERISTICS
= 25 °C unless otherwise specified.
T
mb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
V
(BR)CER
V
(BR)CBO
V
(BR)EBO
h
FE
APPLICATION INFORMATION
Microwave performance up to T
thermal resistance from junction to mounting base Tj= 100 °C 3.6 K/W
thermal resistance from mounting base to heatsink 0.2 K/W
collector cut-off current IE= 0; VCB=20V − 1.5 mA
collector-emitter breakdown voltage IC= 0 mA; RBE= 220 Ω 30 − V
collector-base breakdown voltage IC=10mA 45 − V
emitter-base breakdown voltage IE=10mA 3 − V
DC current gain IC= 0.5 A; VCE= 3 V 15 100
= 25 °C in a common emitter class AB amplifier.
mb
MODE OF
OPERATION
f
(GHz)
V
(V)
CE
I
CQ
(A)
P
L1
(W)
Class AB (CW) 1.85 24 0.05 ≥12
typ. 15
G
po
(dB)
≥7.8
typ. 8.5
η
(%)
C
Zi; Z
(Ω)
L
typ. 43 see Figs 6
and 7
September 1994 4
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Philips Semiconductors Product specification
NPN silicon planar epitaxial
microwave power transistor
handbook, full pagewidth
4.0
40
0.7
4.0
30
7.0
17.0
1.0
LLE18150X
30
5.0
4.0
6.0
1.0
3.0
8.0
3.0
6.0
2.5
6.02.0
2.5
2.5
7.0
1.0
2.5
13.0
9.0
3.0
40
0.7
2.0
MBD731
F1
C2
V
BB
L1
handbook, full pagewidth
The test circuit is split into two independent halves, each being 30 x 40 mm in size.
Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity: εr = 10.
C5
C6
C3
V
CC
L2
C4C1
MBD732
outputinput
Fig.3 Prematching test circuit board.
September 1994 5
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Philips Semiconductors Product specification
NPN silicon planar epitaxial
microwave power transistor
handbook, full pagewidth
R1
R2
P1
BIAS CIRCUIT
TR1
D1
D2
LLE18150X
PREMATCHING TEST
CIRCUIT
V
CC
C5
F1
C7R3
L1
C6
L2
DUT
MEA600
Fig.4 Class AB bias circuit.
List of components (see Figs 3 and 4).
COMPONENT DESCRIPTION VALUE ORDERING INFORMATION
TR1 transistor, BDT91 or equivalent
C1, C4 DC blocking chip capacitor 100 pF ATC 100A101kp
C2, C3 trimmer capacitor 0.5 to 5.0 pF Tekelec 727-1
C5, C6 feedthrough bypass capacitor 1500 pF Erie 1250-003
C7 electrolytic capacitor 10 µF, >30 V
D1 diode BY239 or equivalent; note 1
D2 diode BY239 or equivalent; note 2
L1 4 turns 0.5 mm copper wire;
internal diameter = 2 mm
L2 4 turns 0.5 mm copper wire;
internal diameter = 2 mm
P1 linear potentiometer 4.7 kΩ
R1 resistor 100 Ω, 0.25 W
R2 resistor 10 kΩ, 0.25 W
R3 resistor 56 Ω, 0.25 W
F1 ferrite bead Philips tube, 12NC = 4330 030 43081
4.2 x 2.2 x 3.2 mm (4B1)
Notes
1. In thermal contact with TR1.
2. In thermal contact with DUT.
September 1994 6
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Philips Semiconductors Product specification
NPN silicon planar epitaxial
microwave power transistor
20
P
L
(W)
16
12
8
4
0
0
I = 20 mA
CQ
50 mA
100 mA
1234
P (W)
MBD737
i
LLE18150X
Input and optimum load impedances.
V
= 24 V; ICQ = 50 mA; Zo = 10 Ω (see Figs 6 and 7);
CE
typical values at P
f
(GHz)
1.70 4.5 + j8.0 6.2 − j0.5
1.80 7.5 + j9.0 5.7 − j1.0
1.85 9.2 + j8.2 4.7 − j1.7
1.90 9.5 + j6.5 3.9 − j2.2
2.00 7.0 + j3.0 2.7 − j2.4
L=PL1
.
Z
i
(Ω)
Z
(Ω)
L
VCE = 24 V; f = 1850 MHz.
Fig.5 Load power as a function of input power.
September 1994 7
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Philips Semiconductors Product specification
NPN silicon planar epitaxial
microwave power transistor
0.5
0.2
+ j
0
– j
0.2
0.2 0.5 1052
0.5
Z
i
1.7 GHz
2 GHz
1
1
LLE18150X
2
5
1.85 GHz
10
∞
10
5
2
MBD742
VCE = 24 V; Zo = 10 Ω; ICQ = 50 mA.
Fig.6 Input impedance as a function of frequency; typical values at PL=P
L1
1
0.5
1.7 GHz
Z
L
0.2
+ j
0
– j
0.2
0.2 0.5 1052
1.85 GHz
2 GHz
0.5
2
5
10
∞
10
5
2
VCE = 24 V; Zo = 10 Ω; ICQ = 50 mA.
Fig.7 Optimum load impedance as a function of frequency; typical values at PL=PL1.
September 1994 8
1
MBD743
Page 9
Philips Semiconductors Product specification
NPN silicon planar epitaxial
microwave power transistor
PACKAGE OUTLINE
2.3
2.0
O 3.3
0.13
max
seating
plane
0.25
LLE18150X
19.1 max
6.5
max
14.22
M
1
3
2
1.7 max
1.7
max
4.5 min
6.5
6.2
4.5 min
MBB945
4.8
max
Dimensions in mm.
Torque on screws: max. 0.5 Nm.
Recommended screw: M3.
Fig.8 FO-229.
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1994 9
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