Datasheet LLE18100X Datasheet (Philips)

Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
LLE18100X
NPN silicon planar epitaxial microwave power transistor
Product specification
November 1994
Page 2
NPN silicon planar epitaxial microwave power transistor

FEATURES

Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
Interdigitated structure provides high emitter efficiency
Gold metallization realizes very good stability of the characteristics and excellent lifetime
Multicell geometry gives good balance of dissipated power and low thermal resistance
Internal input prematching ensures good stability and allows an easier design of wideband circuits.

PINNING - SOT437A

PIN DESCRIPTION
1 collector 2 base 3 emitter connected to flange

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange.

QUICK REFERENCE DATA

Microwave performance up to T amplifier.
MODE OF
OPERATION
class AB (CW) 1.85 24 0.1 9 8 see Figs 8

PIN CONFIGURATION

page
Top view
(GHz)
1
2
f
3
MBC045
LLE18100X

APPLICATIONS

Intended for use in common emitter, class AB power amplifiers in CW conditions for professional applications at 1.85 GHz.
= 25 °C in a common emitter class AB
mb
V
(V)
handbook, halfpage
CE
I
CQ
(A)
P
L1
(W)
MBB012
b
G
po
(dB)
c
e
ZI/Z
()
and 9
L
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
November 1994 2
Page 3
NPN silicon planar epitaxial microwave
LLE18100X
power transistor

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.2 mm from ceramic.
collector-base voltage open emitter 45 V collector-emitter voltage RBE= 220 Ω−30 V collector-emitter voltage open base 15 V emitter-base voltage open collector 3V collector current 2A total power dissipation Tmb=75°C 23 W storage temperature range 65 150 °C junction temperature 200 °C soldering temperature t 10 s
235 °C
note 1
10
handbook, halfpage
I
C
(A)
1
1
10
2
10
110
Tmb≤ 75°C (1) Region of permissible DC operation
Fig.2 DC SOAR.
(1)
VCE (V)
MRA545
30
handbook, halfpage
P
tot
(W)
25
20
15
10
5
2
10
0
0 50 100 150 200
P
max = 23 W.
tot
MRA544
Tmb (
250
o
C)
Fig.3 Maximum power dissipation derating as a
function of mounting base temperature.
November 1994 3
Page 4
NPN silicon planar epitaxial microwave
LLE18100X
power transistor

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MAX.
R
th j-mb
R
th mb-h

CHARACTERISTICS

= 25 °C unless otherwise specified
T
mb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
CER
I
CEO
I
EBO
h
FE
thermal resistance from junction to mounting base Tj= 100 °C 4.2 K/W thermal resistance from mounting base to heatsink 0.2 K/W
collector cut-off current VCB= 20 V;
1mA
IE=0
collector cut-off current VCE= 30 V;
10 mA
RBE= 220
collector cut-off current VCE= 20 V;
10 mA
IB=0
emitter cut-off current VEB= 1.5 V;
100 µA
IC=0
DC current gain VCE=3 V;
15 100
IC=1 A

APPLICATION INFORMATION

Microwave performance up to T
MODE OF OPERATION
=25°C in a common emitter class AB amplifier (note 1).
mb
f
(GHz)
V
(V)
CE
I
CQ
(A)
P
L1
(W)
class AB (CW) 1.85 24 0.1 9;
typ. 11
Note
1. The test circuit is split into 2 independant halves each being 30 × 40 mm in size.
G
(dB)
8; typ. 10
po
Zi/Z
L
()
see Figs 8 and 9
November 1994 4
Page 5
NPN silicon planar epitaxial microwave power transistor
9.1
30 mm
3
3.2
3.5 5
23.4
0.7
0.7
4.9
handbook, full pagewidth
Dimensions in mm Substrate : Epsilam 10 Thickness : 0.635 mm Permittivity : εr= 10
1
3
40 mm
input output
0.635
11.5
LLE18100X
30 mm
0.7
66
0.635
1
3
MCD660
40 mm
1
11
5.5
2
2
0.7 1
10
3.2 2.3
6.5
Fig.4 Prematching test circuit board.
List of components (see bias circuit)
COMPONENT DESCRIPTION VALUE CATALOGUE NO.
TR1 transistor, BDT85 (or equivalent) D1 diode, BY239800 (or equivalent)
note 1
D2 diode, BY239800
note 2 R1 resistor 100 R2 resistor 3.3 k R3 resistor 56 P1 potentiometer, 10 turns (sfernice) 4.7 k C1 electrolytic capacitor 10 µF, 40 V C5, C6 feedthrough bypass capacitor 1500 pF Erie, ref. 1250-003 L1 5 turns 0.5 mm copper wire with ferrite bead L2 5 turns 0.5 mm copper wire
Notes
1. In thermal contact with TR1.
2. In thermal contact with D.U.T.
November 1994 5
Page 6
NPN silicon planar epitaxial microwave power transistor
handbook, full pagewidth
BIAS CIRCUIT
R1
R2
P1
D1
D2
TR1
R3
C1
PREMATCHINGTEST CIRCUIT
+V
CC
C6
C5
L2
L1
D.U.T.
0 V
MBC421 - 1
LLE18100X
15
handbook, halfpage
P
L
(W)
10
5
0
0 0.4
VCE= 24 V f = 1.85 GHz
ICQ = 100 mA
10 mA
3 mA
0.8
Fig.5 Class AB bias circuit at 1.85 GHz.
MRA543
1.2 1.6 PIN (W)
15
handbook, halfpage
d
im
(dBc)
20
25
30
35
40
45
024
VCE= 24 V f = 1.85 GHz
ICQ = 3 mA
30 mA
100 mA
MRA542
68
P
(W)
OUT
Fig.6 Load power as a function of input power.
November 1994 6
Fig.7 Intermodulation distortion as a function of
average output power.
Page 7
NPN silicon planar epitaxial microwave power transistor
handbook, full pagewidth
0.5
0.2
+ j
0
– j
0.2
VCE= 24 V; Zo=10Ω; ICQ= 0.1 A.
Fig.8 Input impedance as a function of frequency; typical values.
0.2 0.5 1 1052
0.5
Z
i
1
1.65
1.85 GHz
1
1.75
LLE18100X
2
5
10
10
5
2
MGA247
handbook, full pagewidth
VCE= 24 V; Zo=10Ω; ICQ= 0.1 A.
1
0.5
0.2
Z
1.65
+ j
0
– j
0.2
L
1.75
0.2 0.5 1 2 105
1.85 GHz
0.5
1
2
5
10
10
5
2
MGA248
Fig.9 Optimum load impedance as a function of frequency; typical values.
November 1994 7
Page 8
NPN silicon planar epitaxial microwave
LLE18100X
power transistor

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 2 leads SOT437A

D
A
F
3
U
1
q
1
B
C
c
H
U
2
A
p
w
M
AB
1
2
w
M
b
0 5 10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
5.03
mm
4.31
OUTLINE
VERSION
SOT437A 97-05-23
b
1.66
1.39
cD
6.99
0.13
6.22
0.07
IEC JEDEC EIAJ
FHp q
E
6.99
6.22
1.66
1.39
3.43
17.02
3.17
16.00
REFERENCES
2
scale
Q
2.29
2.03
C
U
14.22
U
1
19.03
18.77
6.48
6.22
w
2
0.51
w
1
2
1.02
EUROPEAN
PROJECTION
Q
E
ISSUE DATE
November 1994 8
Page 9
NPN silicon planar epitaxial microwave
LLE18100X
power transistor

DEFINITIONS

Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
November 1994 9
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