Datasheet LLE18100X Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

LLE18100X

NPN silicon planar epitaxial
microwave power transistor

Product specification

November 1994

Philips Semiconductors Product specification

NPN silicon planar epitaxial microwave
power transistor

FEATURES

• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR

• Interdigitated structure provides
high emitter efficiency

• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime

• Multicell geometry gives good
balance of dissipated power and
low thermal resistance

• Internal input prematching ensures
good stability and allows an easier
design of wideband circuits.

PINNING - SOT437A

PIN DESCRIPTION

1 collector
2 base
3 emitter connected to flange

DESCRIPTION

NPN silicon planar epitaxial
microwave power transistor in a
SOT437A glued cap metal ceramic
flange package, with emitter
connected to flange.

QUICK REFERENCE DATA

Microwave performance up to T
amplifier.

MODE OF

OPERATION

class AB (CW) 1.85 24 0.1 ≥ 9 ≥ 8 see Figs 8

PIN CONFIGURATION

page

Top view

(GHz)

1

2

f

3

MBC045

LLE18100X

APPLICATIONS

Intended for use in common emitter,
class AB power amplifiers in CW
conditions for professional
applications at 1.85 GHz.

= 25 °C in a common emitter class AB

mb

V

(V)

handbook, halfpage

CE

I

CQ

(A)

P

L1

(W)

MBB012

b

G

po

(dB)

c

e

ZI/Z

(Ω)

and 9

L

Fig.1 Simplified outline and symbol.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

November 1994 2

Philips Semiconductors Product specification

NPN silicon planar epitaxial microwave

LLE18100X

power transistor

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CER

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

T

sld

Note

1. Up to 0.2 mm from ceramic.

collector-base voltage open emitter − 45 V
collector-emitter voltage RBE= 220 Ω−30 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 3V
collector current − 2A
total power dissipation Tmb=75°C − 23 W
storage temperature range −65 150 °C
junction temperature − 200 °C
soldering temperature t ≤ 10 s

− 235 °C

note 1

10

handbook, halfpage

I

C

(A)

1

−1

10

−2

10

110

Tmb≤ 75°C
(1) Region of permissible DC operation

Fig.2 DC SOAR.

(1)

VCE (V)

MRA545

30

handbook, halfpage

P

tot

(W)

25

20

15

10

5

2

10

0

0 50 100 150 200

P

max = 23 W.

tot

MRA544

Tmb (

250

o

C)

Fig.3 Maximum power dissipation derating as a

function of mounting base temperature.

November 1994 3

Philips Semiconductors Product specification

NPN silicon planar epitaxial microwave

LLE18100X

power transistor

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MAX.

R

th j-mb

R

th mb-h

CHARACTERISTICS

= 25 °C unless otherwise specified

T

mb

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

CBO

I

CER

I

CEO

I

EBO

h

FE

thermal resistance from junction to mounting base Tj= 100 °C 4.2 K/W
thermal resistance from mounting base to heatsink 0.2 K/W

collector cut-off current VCB= 20 V;

− 1mA

IE=0

collector cut-off current VCE= 30 V;

− 10 mA

RBE= 220 Ω

collector cut-off current VCE= 20 V;

− 10 mA

IB=0

emitter cut-off current VEB= 1.5 V;

− 100 µA

IC=0

DC current gain VCE=3 V;

15 100

IC=1 A

APPLICATION INFORMATION

Microwave performance up to T

MODE OF OPERATION

=25°C in a common emitter class AB amplifier (note 1).

mb

f

(GHz)

V

(V)

CE

I

CQ

(A)

P

L1

(W)

class AB (CW) 1.85 24 0.1 ≥ 9;

typ. 11

Note

1. The test circuit is split into 2 independant halves each being 30 × 40 mm in size.

G

(dB)

≥ 8;
typ. 10

po

Zi/Z

L

(Ω)

see Figs 8 and 9

November 1994 4

Philips Semiconductors Product specification

NPN silicon planar epitaxial microwave
power transistor

9.1

30 mm

3

3.2

3.5 5

23.4

0.7

0.7

4.9

handbook, full pagewidth

Dimensions in mm
Substrate : Epsilam 10
Thickness : 0.635 mm
Permittivity : εr= 10

1

3

40 mm

input output

0.635

11.5

LLE18100X

30 mm

0.7

66

0.635

1

3

MCD660

40 mm

1

11

5.5

2

2

0.7
1

10

3.2 2.3

6.5

Fig.4 Prematching test circuit board.

List of components (see bias circuit)

COMPONENT DESCRIPTION VALUE CATALOGUE NO.

TR1 transistor, BDT85 (or equivalent)
D1 diode, BY239800 (or equivalent)

note 1

D2 diode, BY239800

note 2
R1 resistor 100 Ω
R2 resistor 3.3 kΩ
R3 resistor 56 Ω
P1 potentiometer, 10 turns (sfernice) 4.7 kΩ
C1 electrolytic capacitor 10 µF, 40 V
C5, C6 feedthrough bypass capacitor 1500 pF Erie, ref. 1250-003
L1 5 turns 0.5 mm copper wire with ferrite bead
L2 5 turns 0.5 mm copper wire

Notes

1. In thermal contact with TR1.

2. In thermal contact with D.U.T.

November 1994 5

Philips Semiconductors Product specification

NPN silicon planar epitaxial microwave
power transistor

handbook, full pagewidth

BIAS CIRCUIT

R1

R2

P1

D1

D2

TR1

R3

C1

PREMATCHINGTEST CIRCUIT

+V

CC

C6

C5

L2

L1

D.U.T.

0 V

MBC421 - 1

LLE18100X

15

handbook, halfpage

P

L

(W)

10

5

0

0 0.4

VCE= 24 V
f = 1.85 GHz

ICQ = 100 mA

10 mA

3 mA

0.8

Fig.5 Class AB bias circuit at 1.85 GHz.

MRA543

1.2 1.6
PIN (W)

−15

handbook, halfpage

d

im

(dBc)

−20

−25

−30

−35

−40

−45

024

VCE= 24 V
f = 1.85 GHz

ICQ = 3 mA

30 mA

100 mA

MRA542

68

P

(W)

OUT

Fig.6 Load power as a function of input power.

November 1994 6

Fig.7 Intermodulation distortion as a function of

average output power.

Philips Semiconductors Product specification

NPN silicon planar epitaxial microwave
power transistor

handbook, full pagewidth

0.5

0.2

+ j

0

– j

0.2

VCE= 24 V;
Zo=10Ω;
ICQ= 0.1 A.

Fig.8 Input impedance as a function of frequency; typical values.

0.2 0.5 1 1052

0.5

Z

i

1

1.65

1.85 GHz

1

1.75

LLE18100X

2

5

10

∞

10

5

2

MGA247

handbook, full pagewidth

VCE= 24 V;
Zo=10Ω;
ICQ= 0.1 A.

1

0.5

0.2

Z

1.65

+ j

0

– j

0.2

L

1.75

0.2 0.5 1 2 105

1.85 GHz

0.5

1

2

5

10

∞

10

5

2

MGA248

Fig.9 Optimum load impedance as a function of frequency; typical values.

November 1994 7

Philips Semiconductors Product specification

NPN silicon planar epitaxial microwave

LLE18100X

power transistor

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 2 leads SOT437A

D

A

F

3

U

1

q

1

B

C

c

H

U

2

A

p

w

M

AB

1

2

w

M

b

0 5 10 mm

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

A

5.03

mm

4.31

OUTLINE

VERSION

SOT437A 97-05-23

b

1.66

1.39

cD

6.99

0.13

6.22

0.07

IEC JEDEC EIAJ

FHp q

E

6.99

6.22

1.66

1.39

3.43

17.02

3.17

16.00

REFERENCES

2

scale

Q

2.29

2.03

C

U

14.22

U

1

19.03

18.77

6.48

6.22

w

2

0.51

w

1

2

1.02

EUROPEAN

PROJECTION

Q

E

ISSUE DATE

November 1994 8

Philips Semiconductors Product specification

NPN silicon planar epitaxial microwave

LLE18100X

power transistor

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

November 1994 9