NPN silicon planar epitaxial
microwave power transistor
Product specification
November 1994
Page 2
Philips SemiconductorsProduct specification
NPN silicon planar epitaxial microwave
power transistor
FEATURES
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
• Internal input prematching ensures
good stability and allows an easier
design of wideband circuits.
PINNING - SOT437A
PINDESCRIPTION
1collector
2base
3emitter connected to flange
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT437A glued cap metal ceramic
flange package, with emitter
connected to flange.
QUICK REFERENCE DATA
Microwave performance up to T
amplifier.
MODE OF
OPERATION
class AB (CW)1.85240.1≥ 9≥ 8see Figs 8
PIN CONFIGURATION
page
Top view
(GHz)
1
2
f
3
MBC045
LLE18100X
APPLICATIONS
Intended for use in common emitter,
class AB power amplifiers in CW
conditions for professional
applications at 1.85 GHz.
= 25 °C in a common emitter class AB
mb
V
(V)
handbook, halfpage
CE
I
CQ
(A)
P
L1
(W)
MBB012
b
G
po
(dB)
c
e
ZI/Z
(Ω)
and 9
L
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
November 19942
Page 3
Philips SemiconductorsProduct specification
NPN silicon planar epitaxial microwave
LLE18100X
power transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.2 mm from ceramic.
collector-base voltageopen emitter−45V
collector-emitter voltageRBE= 220 Ω−30V
collector-emitter voltageopen base−15V
emitter-base voltageopen collector−3V
collector current−2A
total power dissipationTmb=75°C−23W
storage temperature range−65150°C
junction temperature−200°C
soldering temperaturet ≤ 10 s
−235°C
note 1
10
handbook, halfpage
I
C
(A)
1
−1
10
−2
10
110
Tmb≤ 75°C
(1) Region of permissible DC operation
Fig.2 DC SOAR.
(1)
VCE (V)
MRA545
30
handbook, halfpage
P
tot
(W)
25
20
15
10
5
2
10
0
050100150200
P
max = 23 W.
tot
MRA544
Tmb (
250
o
C)
Fig.3Maximum power dissipation derating as a
function of mounting base temperature.
November 19943
Page 4
Philips SemiconductorsProduct specification
NPN silicon planar epitaxial microwave
LLE18100X
power transistor
THERMAL CHARACTERISTICS
SYMBOLPARAMETERCONDITIONSMAX.
R
th j-mb
R
th mb-h
CHARACTERISTICS
= 25 °C unless otherwise specified
T
mb
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
I
CBO
I
CER
I
CEO
I
EBO
h
FE
thermal resistance from junction to mounting baseTj= 100 °C4.2 K/W
thermal resistance from mounting base to heatsink0.2 K/W
collector cut-off currentVCB= 20 V;
−1mA
IE=0
collector cut-off currentVCE= 30 V;
−10mA
RBE= 220 Ω
collector cut-off currentVCE= 20 V;
−10mA
IB=0
emitter cut-off currentVEB= 1.5 V;
−100µA
IC=0
DC current gainVCE=3 V;
15100
IC=1 A
APPLICATION INFORMATION
Microwave performance up to T
MODE OF OPERATION
=25°C in a common emitter class AB amplifier (note 1).
mb
f
(GHz)
V
(V)
CE
I
CQ
(A)
P
L1
(W)
class AB (CW)1.85240.1≥ 9;
typ. 11
Note
1. The test circuit is split into 2 independant halves each being 30 × 40 mm in size.
G
(dB)
≥ 8;
typ. 10
po
Zi/Z
L
(Ω)
see Figs 8 and 9
November 19944
Page 5
Philips SemiconductorsProduct specification
NPN silicon planar epitaxial microwave
power transistor
9.1
30 mm
3
3.2
3.55
23.4
0.7
0.7
4.9
handbook, full pagewidth
Dimensions in mm
Substrate : Epsilam 10
Thickness : 0.635 mm
Permittivity : εr= 10
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
5.03
mm
4.31
OUTLINE
VERSION
SOT437A97-05-23
b
1.66
1.39
cD
6.99
0.13
6.22
0.07
IEC JEDEC EIAJ
FHpq
E
6.99
6.22
1.66
1.39
3.43
17.02
3.17
16.00
REFERENCES
2
scale
Q
2.29
2.03
C
U
14.22
U
1
19.03
18.77
6.48
6.22
w
2
0.51
w
1
2
1.02
EUROPEAN
PROJECTION
Q
E
ISSUE DATE
November 19948
Page 9
Philips SemiconductorsProduct specification
NPN silicon planar epitaxial microwave
LLE18100X
power transistor
DEFINITIONS
Data Sheet Status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
November 19949
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