Datasheet LLE16350X Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

LLE16350X

NPN microwave power transistor

Product specification
Supersedes data of September 1994

1997 Feb 03

Philips Semiconductors Product specification

h

NPN microwave power transistor LLE16350X

FEATURES

• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR

• Interdigitated structure provides
high emitter efficiency

• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime

• Multicell geometry gives good
balance of dissipated power and
low thermal resistance

• Internal input and output
prematching ensures good stability
and allows an easier design of
wideband circuits.

APPLICATIONS

Intended for use in common emitter,
class AB amplifiers in CW conditions
for professional applications between

1.5 GHz and 1.8 GHz.

DESCRIPTION

NPN silicon planar epitaxial
microwave power transistor in a
SOT437A glued cap metal ceramic
flange package, with emitter
connected to flange.

QUICK REFERENCE DATA

Microwave performance up to T

=25°C in a common emitter class AB

mb

amplifier.

MODE OF

OPERATIONf(GHz)

V

(V)

CE

I

CQ

(A)

P

L1

(W)

G

po

(dB)

η

(%)

Zi; Z

C

(Ω)

Class AB (CW) 1.65 24 0.1 ≥29 ≥8 typ. 48 see Figs

8 and 9

PINNING - SOT437A

PIN DESCRIPTION

1 collector
2 base
3 emitter connected to flange

andbook, 4 columns

Top view

1

c

b

3

2

e

MAM112

Fig.1 Simplified outline and symbol.

L

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Feb 03 2

Philips Semiconductors Product specification

NPN microwave power transistor LLE16350X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CER

V

CEO

V

EBO

I

C

P

i

P

tot

T

stg

T

j

T

sld

Note

1. Up to 0.2 mm from ceramic.

collector-base voltage open emitter − 45 V
collector-emitter voltage RBE= 220 Ω−30 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 3V
DC collector current − 6A
input power f = 1.65 GHz; VCE= 24 V; class AB − 8W
total power dissipation Tmb=75°C − 50 W
storage temperature −65 +150 °C
junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C

10

I

C

(A)

101

ΙΙΙ

V (V)

CE

1

1

10

Tmb≤ 75 °C.
(I) Region of permissible DC operation.
(II) Permissible extension provided RBE≤ 220 Ω.

Fig.2 DC SOAR.

MBD760

150

T ( C)

mb

MEA577

o

60

P

tot

(W)

40

20

2

10

0

0 50 100 200

Fig.3 Power derating curve.

1997 Feb 03 3

Philips Semiconductors Product specification

NPN microwave power transistor LLE16350X

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

CHARACTERISTICS

=25°C unless otherwise specified.

T

mb

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

CBO

V

(BR)CER

V

(BR)CBO

V

(BR)EBO

h

FE

thermal resistance from junction to mounting base Tj= 100 °C max. 2 K/W
thermal resistance from mounting base to heatsink typ. 0.2 K/W

collector cut-off current IE= 0; VCB=20V − 3mA
collector-emitter breakdown voltage IC= 15 mA; RBE= 220 Ω 30 − V
collector-base breakdown voltage IC=15mA 45 − V
emitter-base breakdown voltage IE=15mA 3 − V
DC current gain IC= 1 A; VCE= 3 V 15 100

APPLICATION INFORMATION

Microwave performance up to T

MODE OF

OPERATION

f

(GHz)

=25°C in a common emitter class AB amplifier.

mb

V

(V)

CE

I

CQ

(A)

Class AB (CW) 1.65 24 0.1 ≥29

typ. 32

P

L1

(W)

G

po

(dB)

≥8

typ. 9

η

(%)

C

Zi; Z

(Ω)

L

typ. 48 see Figs 8

and 9

1997 Feb 03 4

Philips Semiconductors Product specification

NPN microwave power transistor LLE16350X

handbook, full pagewidth

handbook, full pagewidth

4.7

30

2.0

3.0
40

0.7

2.7

MBD758

V

CC

30

0.8 7.7

5.2

40

0.7

2.8

5.0

C5

2.5 2.5 5.0

3.5

2.5

4.0

5.0 3.0 4.0 12.0

8.0

5.0

2.5

V

BB

2.7

C6

F1

L1

C1

C2 C3

The test circuit is split into two independent halves, each being 30 × 40 mm in size.
Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity: εr= 10.

Fig.4 Prematching test circuit board.

1997 Feb 03 5

L2

C4

R

r

MBD759

outputinput

Philips Semiconductors Product specification

NPN microwave power transistor LLE16350X

handbook, full pagewidth

BIAS CIRCUIT

R1

R2

P1

TR1

D2

D1

C7R3

PREMATCHING TEST

CIRCUIT

V

C5

F1

L1

C6

L2

DUT

MEA600

CC

Fig.5 Class AB bias circuit.

List of components (see Figs 4 and 5)

COMPONENT DESCRIPTION VALUE ORDERING INFORMATION

TR1 transistor, BDT91 or equivalent
C1, C4 DC blocking chip capacitor 100 pF ATC 100A101kp
C2, C3 trimmer capacitor 0.5 to 5.0 pF Tekelec 727-1
C5, C6 feedthrough bypass capacitor 1500 pF Erie 1250-003
C7 electrolytic capacitor 10 µF, >30 V
D1 diode BY239 or equivalent; note 1
D2 diode BY239 or equivalent; note 2
L1 4turns 0.5 mm copper wire;

internal diameter = 2 mm

L2 3turns 0.5 mm copper wire;

internal diameter = 2 mm
P1 linear potentiometer 4.7 kΩ
R1 resistor 100 Ω, 0.25 W
R2 resistor 10 kΩ, 0.25 W
R3 resistor 56 Ω, 0.25 W
F1 ferrite bead Philips tube, 12NC = 4330 030 43081

4.2 × 2.2 × 3.2 mm (4B1)

R

r

copper rivet

Notes

1. In thermal contact with TR1.

2. In thermal contact with DUT.

1997 Feb 03 6

Philips Semiconductors Product specification

NPN microwave power transistor LLE16350X

I =

CQ
100 mA
50 mA
10 mA

P (W)

MEA581

i

40

handbook, halfpage

P

L

(W)

30

20

10

0

0246

VCE= 24 V; f = 1650 MHz.

Fig.6 Load power as a function of input power.

Input and optimum load impedances

V

=24V; ICQ= 0.1 A (see Figs 8 and 9); typical values at PL=PL1.

CE

20

handbook, halfpage

10 mA

d

im

(dBc)

30

50 mA

40

100 mA

50

0

VCE= 24 V; f1= 1650 MHz; f2= 1650.2 MHz.

10 30

20

MEA582

P (W)

o (av)

Fig.7 Intermodulation distortion as a function of

average output power.

f

(GHz)

(Ω)

1.50 4.15 + j4.45 4.6 − j1.0

1.55 5.3 + j3.8 4.2 − j0.85

1.60 6.2 + j2.45 3.8 − j0.8

1.65 6.1 + j0.7 3.4 − j0.8

1.70 5.1 − j0.6 3.05 − j0.9

1.75 3.9 − j1.1 2.75 − j1.0

1.80 2.9 − j1.1 2.5 − j1.15

1997 Feb 03 7

Z

i

Z

L

(Ω)

Philips Semiconductors Product specification

NPN microwave power transistor LLE16350X

handbook, full pagewidth

VCE= 24 V; Zo=10Ω; ICQ= 0.1 A.

Fig.8 Input impedance as a function of frequency; typical values at PL=PL1.

1

0.5

0.2

+ j

0

– j

0.2

1.5 GHz

0.2 0.5 1052

1.8 GHz

0.5

Z

1.65 GHz

1

i

2

5

10

∞

10

5

2

MBD761

handbook, full pagewidth

VCE= 24 V; Zo= 100 W; ICQ= 0.1 A.

Fig.9 Optimum load impedance as a function of frequency; typical values at PL=PL1.

1

0.5

0.2

+ j

0

– j

0.2

0.2 0.5 1 1052

1.8 GHz

0.5

1.5 GHz

Z

L

1.65 GHz

1

2

5

10

∞

10

5

2

MBD762

1997 Feb 03 8

Philips Semiconductors Product specification

NPN microwave power transistor LLE16350X

PACKAGE OUTLINE

19.1 max

6.5

max

14.22

1.7

max

4.8

max

2.3

2.0

0.13
max

seating
plane

O 3.3

Dimensions in mm.
Torque on screws: max. 0.5 Nm.
Recommended screw: M3.
Recommended pitch for mounting screw: 19 mm.

0.25

M

Fig.10 SOT437A.

1

2

1.7 max

4.5 min

6.5

3

6.2

4.5 min

MBB945

1997 Feb 03 9

Philips Semiconductors Product specification

NPN microwave power transistor LLE16350X

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Feb 03 10

Philips Semiconductors Product specification

NPN microwave power transistor LLE16350X

NOTES

1997 Feb 03 11

Philips Semiconductors – a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: seeSouth America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]/xxx
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. [phone], Fax. [phone]

Hungary: seeAustria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.

Worli, MUMBAI 400 018, Tel. [phone], Fax. [phone]

Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. [phone], Fax. [phone]
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180,

Tel. [phone], Fax. [phone]
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. [phone], Fax. [phone]
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. [phone], Fax. [phone]
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. [phone], Fax. [phone]
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. [phone], Fax. [phone]
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. [phone], Fax. [phone]

South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone], Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1997 SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 127121/00/04/pp12 Date of release: 1997 Feb 03 Document order number: 9397750 01685