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polyfet rf devices
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.
Total
Device
Dissipation
140
TM
t
ABSOLUTE MAXIMUM RATINGS ( T =
Junction to
Case Thermal
Resistance
o
Watts V
1.10
C/W
Maximum
Junction
Temperature
LK802
SILICON GATE ENHANCEMENT MODE
RF POWER TRANSISTORLDMOS
Watts
45.0
Package Style
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
o
25 C )
Storage
Temperature
o
-65 C to 150 C200 C A V
DC Drain
Current
oo
8.5
Drain to
Gate
Voltage
70 V
Push - Pull
AK
Drain to
Source
Voltage
70
Gate to
Source
Voltage
20
Gps
η
Bvdss
Idss
Igss
Vgs
Idsat
Ciss
Crss
Coss
RF CHARACTERISTICS (
PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Load Mismatch ToleranceVSWR
12
50
45.0
WATTS OUTPUT )
dB
%
20:1 Relative
0.80
Idq = A, Vds = V, F =
Idq =
0.80
A, Vds = V, F =
Idq = 0.80
A, Vds = V, F =
28.0
28.0
28.0
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward TransconductancegM Vds = 10V, Vgs = 5V
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
65
2.0
1
1 7
1.6
0.50
11.00
60.0
2.0
30.0
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
0.20Ids = mA, Vgs = 0V
Vds =
Vds = 0V Vgs = 30V
Vgs = 20V, Ids = Rdson Saturation Resistance
Vgs = 20V, Vds = 10V
Vds =
Vds =
Vds =
28.0
0.20
V, Vgs = 0V
A, Vgs = VdsIds =
5.00
Vgs = 0V, F = 1 MHz28.0
Vgs = 0V, F = 1 MHz28.0
Vgs = 0V, F = 1 MHz28.0
MHz
1,000
1,000
MHz
1,000
MHz
A
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION 04/27/2001
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LK802
POUT VS PIN GRAPH
LK802 POUT VS PIN F=1000 MHZ; IDQ=1.6A; VDS=28V
60
50
40
30
20
0 0.5 1 1.5 2 2.5 3 3.5 4
14
12
10
8
6
ID IN AMPS
4
2
0
0 2 4 6 8 10 12 14 16 18 20
vg=2v Vg=4v Vg=6v vg=8v vg=10v vg=12v
Efficiency = 50%
PIN IN WATTS
POUT GAIN
L2A 2 DIE IV
VDS IN VOLTS
18.00
17.00
16.00
15.00
14.00
13.00
12.00
11.00
CAPACITANCE VS VOLTAGE
L2A 2DIE CAPACITANCE
100
Ciss
Coss
10
Crss
1
0 5 10 15 20 25 30
VDS IN VOLTS
ID & GM VS VGSIV CURVE
100
10
1
0.1
0 2 4 6 8 10 12 14
L2B 1 DIE ID, GM vs VG
ID
GM
Vgs in Volts
Zin Zout PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION 04/27/2001
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