Datasheet LH28F320S3TD-L10 Datasheet (Sharp)

Page 1

32 M-bit (2 MB x 8/1 MB x 16 x 2-Bank)

LH28F320S3TD-L10

DESCRIPTION

The LH28F320S3TD-L10 Dual Work flash memory with Smart 3 technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications, having high programming performance is achieved through highly-optimized page buffer operations. Its symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards. Its enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F320S3TD-L10 offers three levels of protection : absolute protection with V selective hardware block locking, or flexible software block locking. These alternatives give designers ultimate control of their code security needs. LH28F320S3TD-L10 is conformed to the flash Scalable Command Set (SCS) and the Common Flash Interface (CFI) specification which enable universal and upgradable interface, enable the highest system/device data transfer rates and minimize device and system-level implementation costs.

FEATURES

• Smart 3 Dual Work technology – 2.7 V or 3.3 V V – 2.7 V, 3.3 V or 5 V VPP – Capable of performing erase, write and read

for each bank independently (Impossible to perform read from both banks at a time).

• High-speed write performance – Two 32-byte page buffers/bank – 2.7 µs/byte write transfer rate

• Common Flash Interface (CFI) – Universal & upgradable interface

PP at GND,

Smart 3 Dual Work Flash Memory

• Scalable Command Set (SCS)

• High performance read access time – 100 ns (3.3±0.3 V)/120 ns (2.7 to 3.6 V)

• Enhanced automated suspend options – Write suspend to read – Block erase suspend to write – Block erase suspend to read

• Enhanced data protection features – Absolute protection with V – Flexible block locking – Erase/write lockout during power transitions

• SRAM-compatible write interface

• User-configurable x8 or x16 operation

• High-density symmetrically-blocked architecture – Sixty-four 64 k-byte erasable blocks

• Enhanced cycling capability – 100 000 block erase cycles – 3.2 million block erase cycles/bank

• Low power management – Deep power-down mode – Automatic power saving mode decreases Icc

in static mode

• Automated write and erase – Command user interface – Status register

• ETOX

• Package

∗ ETOX is a trademark of Intel Corporation.

∗

– 56-pin TSOP Type I (TSOP056-P-1420)

LH28F320S3TD-L10

PP = GND

V nonvolatile flash technology

Normal bend

In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

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PIN CONNECTIONS

56-PIN TSOP (Type I)

(TSOP056-P-1420)

1 2 3 4 5 6 7 8

9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28

56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29

1L#

1H#

A19 A18 A17 A16

VCC

A15 A14 A13 A12

BE0#

RP#

A10

A9 A8

GND

A6 A5 A4 A3 A2 A1

WP# WE# OE# STS DQ

DQ7 DQ14 DQ6 GND DQ

DQ5 DQ12 DQ4 VCC GND DQ

DQ3 DQ10 DQ2 VCC DQ9 DQ1 DQ8 DQ0 A0 BYTE# NC NC

LH28F320S3TD-L10

TOP VIEW

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BLOCK DIAGRAM

Y GATING

DECODER

INPUT

BUFFER

OUTPUT BUFFER

DQ0-DQ15

VCC

WE# OE# RP# WP#

ADDRESS

LATCH

DATA

COMPARATOR

PROGRAM/ERASE VOLTAGE SWITCH

STATUS

COMMAND

USER

INTERFACE

MULTIPLEXER

WRITE STATE

MACHINE

DATA

OUTPUT

MULTIPLEXER

QUERY

ROM

ADDRESS COUNTER

A0-A20

DECODER

64 k-BYTE

BLOCKS

BYTE#

VCC GND

VPP

STS

INPUT

BUFFER

I/O

LOGIC

Bank0

Bank1

BE0# BE

1L#

BE0# BE

1H#

IDENTIFIER

LH28F320S3TD-L10

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PIN DESCRIPTION

SYMBOL TYPE NAME AND FUNCTION

ADDRESS INPUTS : Inputs for addresses during read and write operations. Addresses

are internally latched during a write cycle. A

0-A20 INPUT

DQ0-DQ15

BE0#,

BE1L#, BE1H#

INPUT/

OUTPUT

INPUT

RP# INPUT

OE# INPUT OUTPUT ENABLE : Gates the device’s outputs during a read cycle.

WE# INPUT

OPEN

STS

DRAIN

OUTPUT

WP# INPUT

BYTE# INPUT

PP SUPPLY

VCC SUPPLY

GND SUPPLY GROUND : Do not float any ground pins.

NC NO CONNECT : Lead is not internal connected; recommend to be floated.

0 : Byte Select Address. Not used in x16 mode (can be floated).

1-A4 : Column Address. Selects 1 of 16-bit lines.

5-A15 : Row Address. Selects 1 of 2 048-word lines.

A16-A20 : Block Address.

DATA INPUT/OUTPUTS :

0-DQ7 : Inputs data and commands during CUI write cycles; outputs data during

memory array, status register, query, and identifier code read cycles. Data pins float to high-impedance when the chip is deselected or outputs are disabled. Data is internally latched during a write cycle. DQ

8-DQ15 : Inputs data during CUI write cycles in x16 mode; outputs data during

memory array read cycles in x16 mode; not used for status register, query and identifier code read mode. Data pins float to high-impedance when the chip is deselected, outputs are disabled, or in x8 mode (BYTE# = VIL). Data is internally latched during a write cycle. BANK ENABLE : Activates the device’s control logic, input buffers, decoders, and sense amplifiers. When BE

0# and BE1L# "low", bank0 is in active. When BE0# and BE1H# are

"low", bank1 is in active. BE0# and BE1L#, BE1H# must not be low at the same time. RESET/DEEP POWER-DOWN : Puts the device in deep power-down mode and resets internal automation. RP# V

IH enables normal operation. When driven VIL, RP# inhibits

write operations which provide data protection during power transitions. Exit from deep power-down sets the device to read array mode.

WRITE ENABLE : Controls writes to the CUI and array blocks. Addresses and data are latched on the rising edge of the WE# pulse. STS (RY/BY#) : Indicates the status of the internal WSM. When configured in level mode (default mode) , it acts as a RY/BY# pin. When low, the WSM is performing an internal operation (block erase, bank erase, (multi) word/byte write or block lock-bit configuration). STS High Z indicates that the WSM is ready for new commands, block ease is suspended, and (multi) word/byte write is inactive, (multi) word/byte write is suspended or the device is in deep power-down mode. For alternate configurations of the STATUS pin, see the Configuration command (Table 3 and Section 4.14). WRITE PROTECT : Master control for block locking. When V be erased and programmed, and block lock-bits can not be set and reset. BYTE ENABLE : BYTE# V on DQ

0-7, and DQ8-15 float. BYTE# VIH places the device in x16 mode, and turns off the

IL places device in x8 mode. All data are then input or output

A0 input buffer.

BLOCK ERASE, BANK ERASE, (MULTI) WORD/BYTE WRITE, BLOCK LOCK-BIT CONFIGURATION POWER SUPPLY : For erasing array blocks, writing bytes or

configuring block lock-bits. With V

PP ≤ VPPLK, memory contents cannot be altered. Block

erase, bank erase, word/byte write, and block lock-bit configuration with an invalid V (see Section 6.2.3 "DC CHARACTERISTICS") produce spurious results and should not be attempted. DEVICE POWER SUPPLY : Internal detection configures the device for 2.7 V or 3.3 V operation. To switch from one voltage to another, ramp V V

CC to the new voltage. Do not float any power pins. With VCC ≤ VLKO, all write attempts

CC down to GND and then ramp

to the flash memory are inhibited. Device operations at invalid V

6.2.3 "DC CHARACTERISTICS") produce spurious results and should not be attempted.

LH28F320S3TD-L10

IL, locked blocks can not

CC voltage (see Section

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1 INTRODUCTION

This datasheet contains LH28F320S3TD-L10 specifications. Section 1 provides a flash memory overview. Sections 2, 3, 4, and 5 describe the memory organization and functionality. Section 6 covers electrical specifications. The LH28F320S3TD-L10 flash memory documentation also includes ordering information which is referenced in Section 7.

1.1 Product Overview

The LH28F320S3TD-L10 is a high-performance 32 M-bit Smart 3 Dual Work flash memory organized as 2 MB x8/1 MB x 16 x 2-Bank. The 4 MB of data is arranged in sixty-four 64 k-byte blocks which are individually erasable, lockable, and unlockable in-system. The memory map is shown in Fig. 1.

LH28F320S3TD-L10

A block erase operation erases one of the device’s 64 k-byte blocks typically within 0.41 second (3.3 V

CC, 5 V VPP) independent of other blocks. Each

V block can be independently erased 100 000 times (3.2 million block erases per bank). Block erase suspend mode allows system software to suspend block erase to read data from, or write data to any other block.

A word/byte write is performed in byte increments typically within 12.95 µs (3.3 V V multi word/byte write has high speed write performance of 2.7 µs/byte (3.3 V V (Multi) word/byte write suspend mode enables the system to read data from, or write data to any other flash memory array location.

CC, 5 V VPP). A

CC, 5 V VPP).

Smart 3 technology provides a choice of V

PP combinations, as shown in Table 1, to meet

V system performance and power expectations. V

CC and

at 2.7 V, 3.3 V and 5 V eliminates the need for a separate 12 V converter. In addition to flexible erase and program voltages, the dedicated V gives complete data protection when V

Table 1 VCC and VPP Voltage Combinations

Offered by Smart 3 Technology

VCC VOLTAGE VPP VOLTAGE

2.7 V 2.7 V, 3.3 V, 5 V

3.3 V 3.3 V, 5 V

PP pin

PP ≤ VPPLK.

Internal VCC and VPP detection circuitry automatically configures the device for optimized read and write operations.

A Command User Interface (CUI) serves as the interface between the system processor and internal operation of the device. A valid command sequence written to the CUI initiates device automation. An internal Write State Machine (WSM) automatically executes the algorithms and timings necessary for block erase, bank erase, (multi) word/byte write and block lock-bit configuration operations.

Individual block locking uses a combination of bits and WP#, sixty-four block lock-bits per bank, to lock and unlock blocks. Block lock-bits gate block erase, bank erase and (multi) word/byte write operations. Block lock-bit configuration operations (Set Block Lock-Bit and Clear Block Lock-Bits commands) set and cleared block lock-bits.

The status register indicates when the WSM’s block erase, bank erase, (multi) word/byte write or block lock-bit configuration operation is finished.

The STS output gives an additional indicator of WSM activity by providing both a hardware signal of status (versus software polling) and status masking (interrupt masking for background block erase, for example). Status polling using STS minimizes both CPU overhead and system power consumption. STS pin can be configured to different states using the Configuration command. The STS pin defaults to RY/BY# operation. When low, STS indicates that the WSM is performing a block erase, bank erase, (multi) word/byte write or block lock-bit configuration. STS High Z indicates that the WSM is ready for a new command, block erase is suspended and (multi) word/byte write are

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LH28F320S3TD-L10

inactive, (multi) word/byte write are suspended, or the device is in deep power-down mode. The other 3 alternate configurations are all pulse mode for use as a system interrupt.

The access time is 100 ns (t

AVQV) at the VCC

supply voltage range of 3.0 to 3.6 V over the temperature range, 0 to +70°C. At 2.7 to 3.6 V

CC, the access time is 120 ns.

The Automatic Power Saving (APS) feature substantially reduces active current when the device is in static mode (addresses not switching). In APS mode, the typical I

2.7 V and 3.3 V V

CC.

CCR current is 3 mA at

When either BE are at V

0# or BE1L#, BE1H# and RP# pins

CC, the ICC CMOS standby mode is

enabled. When the RP# pin is at GND, deep power-down mode is enabled which minimizes power consumption and provides write protection during reset. A reset time (t

PHQV) is required from

RP# switching high until outputs are valid. Likewise, the device has a wake time (t

PHEL) from RP#-high

until writes to the CUI are recognized. With RP# at GND, the WSM is reset and the status register is cleared.

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LH28F320S3TD-L10

64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block

1FFFFF 1F0000

1EFFFF 1E0000

1DFFFF 1D0000

1CFFFF 1C0000

1BFFFF 1B0000

1AFFFF 1A0000

19FFFF 190000

18FFFF 180000

17FFFF 170000

16FFFF 160000

15FFFF 150000

14FFFF 140000

13FFFF 130000

12FFFF 120000

11FFFF 110000

10FFFF 100000

0FFFFF 0F0000

0EFFFF 0E0000

0DFFFF 0D0000

0CFFFF 0C0000

0BFFFF 0B0000

0AFFFF 0A0000

09FFFF 090000

08FFFF 080000

07FFFF 070000

06FFFF 060000

05FFFF 050000

04FFFF 040000

03FFFF 030000

02FFFF 020000

01FFFF 010000

00FFFF 000000

31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10

9 8 7 6 5 4 3 2 1 0

1FFFFF 1F0000

1EFFFF 1E0000

1DFFFF 1D0000

1CFFFF 1C0000

1BFFFF 1B0000

1AFFFF 1A0000

19FFFF 190000

18FFFF 180000

17FFFF 170000

16FFFF 160000

15FFFF 150000

14FFFF 140000

13FFFF 130000

12FFFF 120000

11FFFF 110000

10FFFF 100000

0FFFFF 0F0000

0EFFFF 0E0000

0DFFFF 0D0000

0CFFFF 0C0000

0BFFFF 0B0000

0AFFFF 0A0000

09FFFF 090000

08FFFF 080000

07FFFF 070000

06FFFF 060000

05FFFF 050000

04FFFF 040000

03FFFF 030000

02FFFF 020000

01FFFF 010000

00FFFF 000000

31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10

9 8 7 6 5 4 3 2 1 0

Bank0

(BE

0# = BE1L# = "L")

Bank1

(BE0# = BE1H# = "L")

Fig. 1 Memory Map

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2 PRINCIPLES OF OPERATION

The LH28F320S3TD-L10 Smart 3 Dual Work flash memory includes an on-chip WSM to manage block erase, bank erase, (multi) word/byte write and block lock-bit configuration functions. It allows for : 100% TTL-level control inputs, fixed power supplies during block erase, bank erase, (multi) word/byte write and block lock-bit configuration, and minimal processor overhead with RAM-like interface timings.

After initial device power-up or return from deep power-down mode (see Table 2.1 and Table 2.2 "Bus Operations"), the device defaults to read array mode. Manipulation of external memory control pins allow array read, standby, and output disable operations.

Status register, query structure and identifier codes can be accessed through the CUI independent of

PP voltage. High voltage on VPP enables

the V successful block erase, bank erase, (multi) word/byte write and block lock-bit configuration. All functions associated with altering memory contents—lock erase, bank erase, (multi) word/byte write and block lock-bit configuration, status, query and identifier codes—are accessed via the CUI and verified through the status register.

Commands are written using standard microprocessor write timings. The CUI contents serve as input to the WSM, which controls the block erase, bank erase, (multi) word/byte write and block lockbit configuration. The internal algorithms are regulated by the WSM, including pulse repetition, internal verification, and margining of data. Addresses and data are internally latched during write cycles. Writing the appropriate command outputs array data, accesses the identifier codes, outputs query structure or outputs status register data.

LH28F320S3TD-L10

Interface software that initiates and polls progress of block erase, bank erase, (multi) word/byte write and block lock-bit configuration can be stored in any block. This code is copied to and executed from system RAM during flash memory updates. After successful completion, reads are again possible via the Read Array command. Block erase suspend allows system software to suspend a block erase to read/write data from/to blocks other than that which is suspended. Write suspend allows system software to suspend a (multi) word/byte write to read data from any other flash memory array location.

2.1 Data Protection

Depending on the application, the system designer may choose to make the V switchable (available only when block erase, bank erase, (multi) word/byte write and block lock-bit configuration are required) or hardwired to

PPH1/2/3. The device accommodates either design

V practice and encourages optimization of the processor-memory interface.

When V

PP ≤ VPPLK, memory contents cannot be

altered. The CUI, with multi-step block erase, bank erase, (multi) word/byte write and block lock-bit configuration command sequences, provides protection from unwanted operations even when high voltage is applied to V are disabled when V voltage V

LKO or when RP# is at V IL. The device’s

CC is below the write lockout

block locking capability provides additional protection from inadvertent code or data alteration by gating block erase, bank erase and (multi) word/byte write operations.

PP power supply

PP. All write functions

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3 BUS OPERATION

The local CPU reads and writes flash memory insystem. All bus cycles to or from the flash memory conform to standard microprocessor bus cycles.

3.1 Read

Information can be read from any block, identifier codes, query structure, or status register independent of the V

IH.

PP voltage. RP# must be at

The first task is to write the appropriate read mode command (Read Array, Read Identifier Codes, Query or Read Status Register) to the CUI. Upon initial device power-up or after exit from deep power-down mode, the device automatically resets to read array mode. Five control pins dictate the data flow in and out of the component : BE# (BE

1L#, BE1H#), OE#, WE#, RP# and WP#. BE0#,

1L#, BE1H# and OE# must be driven active to

BE obtain data at the outputs. BE

0#, BE1L#, BE1H# is

0#,

the device selection control, and when active enables the selected memory device. OE# is the data output (DQ

0-DQ15) control and when active

drives the selected memory data onto the I/O bus. WE# and RP# must be at V

IH. Fig. 15 and Fig. 16

illustrate a read cycle.

3.2 Output Disable

With OE# at a logic-high level (VIH), the device outputs are disabled. Output pins DQ

0-DQ15 are

placed in a high-impedance state.

3.3 Standby

Either BE0# or BE1L#, BE1H# at a logic-high level

IH) places the device in standby mode which

(V substantially reduces device power consumption. DQ

0-DQ15 outputs are placed in a high-impedance

state independent of OE#. If deselected during block erase, bank erase, (multi) word/byte write and block lock-bit configuration, the device continues functioning, and consuming active power until the operation completes.

LH28F320S3TD-L10

3.4 Deep Power-Down

RP# at VIL initiates the deep power-down mode.

In read modes, RP#-low deselects the memory, places output drivers in a high-impedance state and turns off all internal circuits. RP# must be held low for a minimum of 100 ns. Time t after return from power-down until initial memory access outputs are valid. After this wake-up interval, normal operation is restored. The CUI is reset to read array mode and status register is set to 80H.

During block erase, bank erase, (multi) word/byte write or block lock-bit configuration modes, RP#-low will abort the operation. STS remains low until the reset operation is complete. Memory contents being altered are no longer valid; the data may be partially erased or written. Time t after RP# goes to logic-high (V command can be written.

As with any automated device, it is important to assert RP# during system reset. When the system comes out of reset, it expects to read from the flash memory. Automated flash memories provide status information when accessed during block erase, bank erase, (multi) word/byte write and block lockbit configuration. If a CPU reset occurs with no flash memory reset, proper CPU initialization may not occur because the flash memory may be providing status information instead of array data. SHARP’s flash memories allow proper CPU initialization following a system reset through the use of the RP# input. In this application, RP# is controlled by the same RESET# signal that resets the system CPU.

PHQV is required

PHWL is required

IH) before another

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3.5 Read Identifier Codes Operation

Block 31 Status Code

Block 0

Block 1 Status Code

Block 0 Status Code

Device Code

Manufacture Code

1FFFFF

1F0006 1F0005 1F0004 1F0003

1F0000 1EFFFF

020000 01FFFF

010006 010005 010004 010003

010000 00FFFF

000006 000005 000004 000003 000002 000001 000000

1FFFFF

1F0006 1F0005 1F0004 1F0003

1F0000 1EFFFF

020000 01FFFF

010006 010005 010004 010003

010000 00FFFF

000006 000005 000004 000003 000002 000001 000000

Bank0

(BE0# = BE1L# = "L")

Bank1

(BE

0# = BE1H# = "L")

Reserved for

Future Implementation

Reserved for

Future Implementation

Block 31

(Blocks 2 through 30)

Reserved for

Future Implementation

Reserved for

Future Implementation

Block 1

Reserved for

Future Implementation

Block 0

Device Code

Manufacture Code

Reserved for

Future Implementation

Reserved for

Future Implementation

Block 31

(Blocks 2 through 30)

Reserved for

Future Implementation

Reserved for

Future Implementation

Block 1

Reserved for

Future Implementation

Block 31 Status Code

Block 1 Status Code

Block 0 Status Code

The read identifier codes operation outputs the manufacture code, device code, block status codes for each block (see Fig. 2). Using the manufacture and device codes, the system CPU can

LH28F320S3TD-L10

automatically match the device with its proper algorithms. The block status codes identify locked or unlocked block setting and erase completed or erase uncompleted condition.

3.6 Query Operation

The query operation outputs the query structure. Query database is stored in the 48-byte ROM per bank. Query structure allows system software to gain critical information for controlling the flash component. Query structures are always presented on the lowest-order data output (DQ

Fig. 2 Device Identifier Code Memory Map

0-DQ7) only.

3.7 Write

Writing commands to the CUI enable reading of device data and identifier codes. They also control inspection and clearing of the status register. When V

CC = VCC1/2 and VPP = VPPH1/2/3, the CUI

additionally controls block erase, bank erase, (multi) word/byte write and block lock-bit configuration.

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LH28F320S3TD-L10

The Block Erase command requires appropriate command data and an address within the block to be erased. The Word/Byte Write command requires the command and address of the location to be

BE# (whichever goes high first). Standard microprocessor write timings are used. Fig. 17 and Fig. 18 illustrate WE# and BE#-controlled write

operations. written. Set Block Lock-Bit command requires the command and block address within the device (Block Lock) to be locked. The Clear Block LockBits command requires the command and address within the device.

4 COMMAND DEFINITIONS

When the VPP voltage VPPLK, read operations from

the status register, identifier codes, query, or blocks

are enabled. Placing V

PPH1/2/3 on VPP enables

successful block erase, bank erase, (multi) The CUI does not occupy an addressable memory location. It is written when WE# and BE# are active. The address and data needed to execute a command are latched on the rising edge of WE# or

Table 2.1 Bus Operations (BYTE# = VIH)

MODE NOTE RP# BE0#BE1L#BE1H# OE# WE#

Bank0

Read Bank1

Disable VIL VIL VIL

1, 2, 3,

9, 10

VIH VIL VIH VIL VIL VIH XXDOUT X

Output Disable 3 VIH VIL VIL VIL VIH VIH X X High Z X

Bank0

Standby Bank1 3 V

Bank0, 1 Deep Power-Down 4 VIL X X X X X X X High Z High Z Read Identifier Codes

Bank0 V

Bank1 9, 10 V

Disable V Query 9, 10 VIH VIL VIL VIL VIL VIH

Bank0 Write Bank1

Bank0, 1 V

3, 7,

8, 9

VIH VIL VIH VIL VIH VIL XXDIN X

IL VIL VIH

IH VIL VIH VIL VIL VIH

IH XX

VIL VIH VIH

IL VIL VIH

IL VIL VIL

VIL VIL VIH

IL VIL VIL

word/byte write and block lock-bit configuration operations. Device operations are selected by writing specific commands into the CUI. Table 3 defines these commands.

ADDRESS

X X X X High Z X

See

Fig. 2

See Table 6 through 10

VPP DQ0-15 STS

(NOTE 5)

(NOTE 6)

High Z

NOTES :

1. Refer to Section 6.2.3 "DC CHARACTERISTICS". When V

PP ≤ VPPLK, memory contents can be read, but

not altered.

2. X can be V

PPLK or VPPH1/2/3 for VPP. See Section 6.2.3 "DC

V CHARACTERISTICS" for V

3. STS is V WSM is executing internal block erase, bank erase, (multi) word/byte write or block lock-configuration algorithms. It is floated during when the WSM is not busy, in block erase suspend mode with (multi) word/byte write inactive, (multi) word/byte write suspend mode, or deep power-down mode.

IL or VIH for control pins and addresses, and

PPLK and VPPH1/2/3 voltages.

OL (if configured to RY/BY# mode) when the

4. RP# at GND±0.2 V ensures the lowest deep powerdown current.

5. See Section 4.2 for read identifier code data.

6. See Section 4.5 for query data.

7. Command writes involving block erase, bank erase, (multi) word/byte write or block lock-bit configuration are reliably executed when V

CC1/2.

8. Refer to Table 3 for valid D

9. Don’t use the timing both OE# and WE# are V

10. Impossible to perform simultaneous read from both banks at a time. Both BE be low at the same time.

PP = VPPH1/2/3 and VCC =

IN during a write operation.

IL.

0# and BE1L#, BE1H# must not

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LH28F320S3TD-L10

Table 2.2 Bus Operations (BYTE# = VIL)

MODE NOTE RP# BE0#BE1L#BE1H# OE# WE#

Bank0

Read Bank1

Disable VIL VIL VIL

1, 2, 3,

9, 10

VIH VIL VIH VIL VIL VIH XXDOUT X

IL VIL VIH

Output Disable 3 VIH VIL VIL VIL VIH VIH X X High Z X

Bank0

Standby Bank1 3 V

Bank0, 1

IH XX

V VIL VIH VIH

X X X X High Z X

Deep Power-Down 4 VIL XXXXX X XHigh Z High Z Read Identifier Codes

Bank0 VIL VIL VIH Bank1 9, 10 V Disable V

IH VIL VIH VIL VIL VIH

IL VIL VIL

Query 9, 10 VIH VIL VIL VIL VIL VIH

Bank0

Write Bank1

Bank0, 1 VIL VIL VIL

3, 7, 8, 9

VIH VIL VIH VIL VIH VIL XXDIN X

VIL VIL VIH

NOTES :

1. Refer to Section 6.2.3 "DC CHARACTERISTICS". When V

PP ≤ VPPLK, memory contents can be read, but

not altered.

2. X can be V V

PPLK or VPPH1/2/3 for VPP. See Section 6.2.3 "DC

CHARACTERISTICS" for V

IL or VIH for control pins and addresses, and

PPLK and VPPH1/2/3 voltages.

OL (if configured to RY/BY# mode) when the

4. RP# at GND±0.2 V ensures the lowest deep powerdown current.

5. See Section 4.2 for read identifier code data.

6. See Section 4.5 for query data.

7. Command writes involving block erase, bank erase, (multi) word/byte write or block lock-bit configuration are reliably executed when V

CC1/2.

8. Refer to Table 3 for valid D

9. Don’t use the timing both OE# and WE# are V

10. Impossible to perform simultaneous read from both banks at a time. Both BE be low at the same time.

ADDRESS

See

Fig. 2

See Table 6 through 10

VPP DQ0-7 STS

(NOTE 5)

(NOTE 6)

PP = VPPH1/2/3 and VCC =

IN during a write operation.

0# and BE1L#, BE1H# must not

High Z

IL.

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LH28F320S3TD-L10

COMMAND

Table 3 Command Definitions

BUS CYCLES

REQ’D.

NOTE

Oper

FIRST BUS CYCLE SECOND BUS CYCLE

(NOTE 1)

Addr

(NOTE 10)

(NOTE 2)

Data

(NOTE 3)

Oper

(NOTE 1)

Addr

(NOTE 2)

Data

Read Array/Reset 1 Write X FFH Read Identifier Codes ≥ 2 4 Write X 90H Read IA ID Query ≥ 2 Write X 98H Read QA QD Read Status Register 2 Write X 70H Read X SRD Clear Status Register 1 Write X 50H Block Erase Setup/Confirm 2 5 Write BA 20H Write BA D0H Bank Erase Setup/Confirm 2 Write X 30H Write X D0H Word/Byte Write Setup/Write 2 5, 6 Write WA 40H Write WA WD Alternate Word/Byte Write Setup/Write Multi Word/Byte Write Setup/Confirm Block Erase and (Multi) Word/Byte Write Suspend Confirm and Block Erase and (Multi) Word/Byte Write Resume Block Lock-Bit Set Setup/Confirm Block Lock-Bit Reset Setup/Confirm

2 5, 6 Write WA 10H Write WA WD

≥ 4 9 Write WA E8H Write WA N–1

1 5 Write X B0H

1 5 Write X D0H

2 7 Write BA 60H Write BA 01H

2 8 Write X 60H Write X D0H

STS Configuration Level-Mode for Erase 2 Write X B8H Write X 00H and Write (RY/BY# Mode) STS Configuration Pulse-Mode for Erase STS Configuration Pulse-Mode for Write STS Configuration Pulse-Mode for Erase and Write

2 Write X B8H Write X 01H

2 Write X B8H Write X 02H

2 Write X B8H Write X 03H

NOTES :

1. BUS operations are defined in Table 2.1 and Table 2.2.

2. X = Any valid address within the device. IA = Identifier code address : see Fig. 2. QA = Query offset address. BA = Address within the block being erased or locked. WA = Address of memory location to be written.

3. SRD = Data read from status register. See Table 13.1

for a description of the status register bits.

WD = Data to be written at location WA. Data is latched

on the rising edge of WE# or BE# (whichever

goes high first). ID = Data read from identifier codes. QD = Data read from query database.

4. Following the Read Identifier Codes command, read operations access manufacture, device and block status codes. See Section 4.2 for read identifier code data.

5. If the block is locked, WP# must be at V block erase or (multi) word/byte write operations. Attempts to issue a block erase or (multi) word/byte write to a locked block while RP# is V

6. Either 40H or 10H is recognized by the WSM as the byte write setup.

7. A block lock-bit can be set while WP# is V

8. WP# must be at V block lock-bits operation simultaneously clears all block lock-bits.

9. Following the Third Bus Cycle, inputs the write address and write data of "N" times. Finally, input the confirm command "D0H".

10. Commands other than those shown above are reserved by SHARP for future device implementations and should not be used.

IH to clear block lock-bits. The clear

IH.

IH to enable

IH.

(NOTE 3)

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LH28F320S3TD-L10

4.1 Read Array Command

Upon initial device power-up and after exit from deep power-down mode, the device defaults to read array mode. This operation is also initiated by writing the Read Array command. The device remains enabled for reads until another command is written. Once the internal WSM has started a block erase, bank erase, (multi) word/byte write or block lock-bit configuration, the device will not recognize the Read Array command until the WSM completes its operation unless the WSM is suspended via an Erase Suspend and (Multi) Word/Byte Write Suspend command. The Read Array command functions independently of the V

voltage and RP# must be VIH.

4.2 Read Identifier Codes Command

The identifier code operation is initiated by writing the Read Identifier Codes command. Following the command write, read cycles from addresses shown in Fig. 2 retrieve the manufacture, device, block lock configuration and block erase status (see Table 4 for identifier code values). To terminate the operation, write another valid command. Like the Read Array command, the Read Identifier Codes

DATA

1 = 0

1 = 1

2-7

command functions independently of the V voltage and RP# must be VIH. Following the Read Identifier Codes command, the following information can be read :

Table 4 Identifier Codes

CODE

Manufacture Code

Device Code

Block Status Code

•Block is Unlocked DQ0 = 0

•Block is Locked DQ0 = 1

•Last erase operation completed successfully

•Last erase operation did not completed successfully

•Reserved for Future Use DQ

ADDRESS

00000H 00001H 00002H 00003H

(NOTE 1)

X0004H

(NOTE 1)

X0005H

NOTE :

1. X selects the specific block status code to be read. See

Fig. 2 for the device identifier code memory map.

4.3 Read Status Register Command

The status register may be read to determine when a block erase, bank erase, (multi) word/byte write or block lock-bit configuration is complete and whether the operation completed successfully (see Table 13.1). It may be read at any time by writing the Read Status Register command. After writing this command, all subsequent read operations output data from the status register until another valid command is written. The status register contents are latched on the falling edge of OE# or

0# or BE1# (Either BE1L# or BE1H#), whichever

BE occurs. OE# or BE BE

1H#) must toggle to VIH before further reads to

0# or BE1# (Either BE1L# or

update the status register latch. The Read Status Register command functions independently of the

PP voltage. RP# must be VIH.

The extended status register may be read to determine multi byte write availability (see Table

13.2). The extended status register may be read at any time by writing the Multi Byte Write command. After writing this command, all subsequent read operations output data from the extended status register, until another valid command is written. The contents of the extended status register are latched on the falling edge of OE# or BE BE

1L# or BE1H#), whichever occurs last in the read

0# or BE1# (Either

cycle. Multi Byte Write command must be re-issued to update the extended status register latch.

4.4 Clear Status Register Command

Status register bits SR.5, SR.4, SR.3 and SR.1 are set to "1"s by the WSM and can only be reset by the Clear Status Register command. These bits indicate various failure conditions (see Table 13.1). By allowing system software to reset these bits, several operations (such as cumulatively erasing or locking multiple blocks or writing several bytes in

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LH28F320S3TD-L10

sequence) may be performed. The status register may be polled to determine if an error occurs during the sequence.

To clear the status register, the Clear Status Register command (50H) is written. It functions independently of the applied V must be V

IH. This command is not functional during

PP voltage. RP#

block erase, bank erase, (multi) word/byte write, block lock-bit configuration, block erase suspend or (multi) word/byte write suspend modes.

4.5 Query Command

Query database of each bank can be read by writing Query command (98H). Following the command write, read cycle from address shown in Table 6 through Table 10 retrieve the critical information to write, erase and otherwise control the flash component. A ignored when x8 mode (BYTE# = V

Query data of each bank are always presented on the low-byte data output (DQ high-byte (DQ

0 of query offset address is

IL).

0-DQ7). In x16 mode,

8-DQ15) outputs 00H. The bytes not

assigned to any information or reserved for future use are set to "0". This command functions independently of the V

Table 5 Example of Query Structure Output

MODE OFFSET ADDRESS

A5, A4, A3, A2, A1, A0

1, 0, 0, 0, 0, 0 (20H) High Z "Q"

x8 mode 1, 0, 0, 0, 0, 1 (21H) High Z "Q"

1, 0, 0, 0, 1, 0 (22H) High Z "R" 1, 0, 0, 0, 1, 1 (23H) High Z "R"

A5, A4, A3, A2, A1

x16 mode

1, 0, 0, 0, 0 (10H) 00H "Q" 1, 0, 0, 0, 1 (11H) 00H "R"

PP voltage. RP# must be VIH.

OUTPUT

DQ15-8 DQ7-0

4.5.1 BLOCK STATUS REGISTER

This field provides lock configuration and erase status for the specified block. These informations are only available when device is ready (SR.7 = 1). If block erase or bank erase operation is finished irregularly, block erase status bit will be set to "1". If bit 1 is "1", this block is invalid.

Table 6 Query Block Status Register

OFFSET

(Word Address)

(BA+2)H 01H Block Status Register

LENGTH DESCRIPTION

bit0 Block Lock Configuration

0 = Block is unlocked 1 = Block is locked

bit1 Block Erase Status

0 = Last erase operation completed successfully 1 = Last erase operation not completed successfully

bit2-7 Reserved for future use

NOTE :

1. BA = The beginning of a Block Address.

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4.5.2 CFI QUERY IDENTIFICATION STRING

The identification string provides verification that the component supports the Common Flash Interface specification. Additionally, it indicates which version

Table 7 CFI Query Identification String

OFFSET

(Word Address)

10H, 11H, 12H 03H Query Unique ASCII string "QRY"

13H, 14H 02H Primary Vendor Command Set and Control Interface ID Code

15H, 16H 02H Address for Primary Algorithm Extended Query Table

17H, 18H 02H Alternate Vendor Command Set and Control Interface ID Code

19H, 1AH 02H Address for Alternate Algorithm Extended Query Table

LENGTH DESCRIPTION

51H, 52H, 59H

01H, 00H (SCS ID Code)

31H, 00H (SCS Extended Query Table Offset)

0000H (0000H means that no alternate exists)

of the spec and which vendor-specified command set(s) is(are) supported.

4.5.3 SYSTEM INTERFACE INFORMATION

The following device information can be useful in optimizing system interface software.

Table 8 System Information String

OFFSET

(Word Address)

1BH 01H V

1CH 01H V

1DH 01H V

1EH 01H V

1FH 01H Typical Time-Out per Single Byte/Word Write

20H 01H Typical Time-Out for Maximum Size Buffer Write (32 Bytes)

21H 01H Typical Time-Out per Individual Block Erase

22H 01H Typical Time-Out for Bank Erase

23H 01H Maximum Time-Out per Single Byte/Word Write, 2

24H 01H Maximum Time-Out per Maximum Size Buffer Write, 2

25H 01H Maximum Time-Out per Individual Block Erase, 2

26H 01H Maximum Time-Out for Bank Erase, 2

LENGTH DESCRIPTION

CC Logic Supply Minimum Write/Erase voltage

27H (2.7 V)

CC Logic Supply Maximum Write/Erase voltage

55H (5.5 V)

PP Programming Supply Minimum Write/Erase voltage

27H (2.7 V)

PP Programming Supply Maximum Write/Erase voltage

55H (5.5 V)

03H (23= 8 µs)

06H (26= 64 µs)

0AH (0AH = 10, 210= 1 024 ms)

0FH (0FH = 15, 215= 32 768 ms)

04H (24= 16, 8 µs x 16 = 128 µs)

04H (24= 16, 64 µs x 16 = 1 024 µs)

04H (24= 16, 1 024 ms x 16 = 16 384 ms)

times of typical.

04H (2

= 16, 32 768 ms x 16 = 524 288 ms)

times of typical.

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4.5.4 DEVICE GEOMETRY DEFINITION

This field provides critical details of the flash device geometry.

Table 9 Device Geometry Definition

OFFSET

(Word Address)

27H 01H Device Size

28H, 29H 02H Flash Device Interface Description

2AH, 2BH 02H Maximum Number of Bytes in Multi Word/Byte Write

2CH 01H Number of Erase Block Regions within Device

2DH, 2EH 02H The Number of Erase Blocks

2FH, 30H 02H The Number of "256 Bytes" Cluster in a Erase Block

LENGTH DESCRIPTION

15H (15H = 21, 221= 2 097 152 = 2 M Bytes)

02H, 00H (x8/x16 supports x8 and x16 via BYTE#)

05H, 00H (25= 32 Bytes )

01H (symmetrically blocked)

1FH, 00H (1FH = 31 ⇒ 31 + 1 = 32 Blocks)

00H, 01H (0100H = 256 ⇒ 256 Bytes x 256 = 64 k Bytes in a Erase Block)

LH28F320S3TD-L10

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4.5.5 SCS OEM SPECIFIC EXTENDED QUERY TABLE

Certain flash features and commands may be optional in a vendor-specific algorithm specification. The optional vendor-specific query table(s) may be

Table 10 SCS OEM Specific Extended Query Table

OFFSET

(Word Address)

31H, 32H, 33H 03H PRI

34H 01H 31H (1) Major Version Number , ASCII 35H 01H 30H (0) Minor Version Number, ASCII 36H, 37H, 04H 0FH, 00H, 00H, 00H 38H, 39H Optional Command Support

3AH 01H 01H

3BH, 3CH 02H 03H, 00H

3DH 01H VCC Logic Supply Optimum Write/Erase voltage (highest performance)

3EH 01H V

3FH reserved Reserved for future versions of the SCS specification

LENGTH DESCRIPTION

50H, 52H, 49H

bit0 = 1 : Bank Erase Supported bit1 = 1 : Suspend Erase Supported bit2 = 1 : Suspend Write Supported bit3 = 1 : Lock/Unlock Supported bit4 = 0 : Queued Erase Not Supported bit5-31 = 0 : Reserved for future use

Supported Functions after Suspend

bit0 = 1 : Write Supported after Erase Suspend bit1-7 = 0 : Reserved for future use

Block Status Register Mask

bit0 = 1 : Block Status Register Lock Bit [BSR.0] active bit1 = 1 : Block Status Register Valid Bit [BSR.1] active bit2-15 = 0 : Reserved for future use

50H (5.0 V)

PP Programming Supply Optimum Write/Erase voltage (highest performance)

50H (5.0 V)

used to specify this and other types of information. These structures are defined solely by the flash vendor(s).

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4.6 Block Erase Command

Block erase is executed one block at a time and initiated by a two-cycle command. A block erase setup is first written, followed by a block erase confirm. This command sequence requires appropriate sequencing and an address within the block to be erased (erase changes all block data to FFH). Block preconditioning, erase and verify are handled internally by the WSM (invisible to the system). After the two-cycle block erase sequence is written, the device automatically outputs status register data when read (see Fig. 3). The CPU can detect block erase completion by analyzing the output data of the STS pin or status register bit SR.7.

When the block erase is complete, status register bit SR.5 should be checked. If a block erase error is detected, the status register should be cleared before system software attempts corrective actions. The CUI remains in read status register mode until a new command is issued.

This two-step command sequence of set-up followed by execution ensures that block contents are not accidentally erased. An invalid Block Erase command sequence will result in both status register bits SR.4 and SR.5 being set to "1". Also, reliable block erasure can only occur when V

CC1/2 and VPP = VPPH1/2/3. In the absence of this

V high voltage, block contents are protected against erasure. If block erase is attempted while V

PPLK, SR.3 and SR.5 will be set to "1". Successful

V block erase requires that the corresponding block lock-bit be cleared or if set, that WP# = V erase is attempted when the corresponding block lock-bit is set and WP# = V

IL, SR.1 and SR.5 will

be set to "1".

CC =

PP ≤

IH. If block

4.7 Bank Erase Command

This command followed by a confirm command (D0H) erases all of the unlocked blocks. A bank erase setup is first written, followed by a bank erase confirm. After a confirm command is written, device erases the all unlocked blocks from block 0 to block 31 block by block. This command sequence requires appropriate sequencing. Block preconditioning, erase and verify are handled internally by the WSM (invisible to the system). After the two-cycle bank erase sequence is written, the device automatically outputs status register data when read (see Fig. 4). The CPU can detect bank erase completion by analyzing the output data of the STS pin or status register bit SR.7.

When the bank erase is complete, status register bit SR.5 should be checked. If erase error is detected, the status register should be cleared before system software attempts corrective actions. The CUI remains in read status register mode until a new command is issued. If error is detected on a block during bank erase operation, WSM stops erasing. Reading the block valid status by issuing Read ID Codes command or Query command informs which blocks failed to its erase.

This two-step command sequence of set-up followed by execution ensures that block contents are not accidentally erased. An invalid Bank Erase command sequence will result in both status register bits SR.4 and SR.5 being set to "1". Also, reliable bank erasure can only occur when V

CC1/2 and VPP = VPPH1/2/3. In the absence of this

V high voltage, block contents are protected against erasure. If bank erase is attempted while V V

PPLK, SR.3 and SR.5 will be set to "1". When

WP# = V

IH, all blocks are erased independent of

block lock-bits status. When WP# = V unlocked blocks are erased. In this case, SR.1 and SR.4 will not be set to "1". Bank erase can not be suspended.

CC =

PP ≤

IL, only

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4.8 Word/Byte Write Command

Word/byte write is executed by a two-cycle command sequence. Word/Byte Write setup (standard 40H or alternate 10H) is written, followed by a second write that specifies the address and data (latched on the rising edge of WE#). The WSM then takes over, controlling the word/byte write and write verify algorithms internally. After the word/byte write sequence is written, the device automatically outputs status register data when read (see Fig. 5). The CPU can detect the completion of the word/byte write event by analyzing the STS pin or status register bit SR.7.

When word/byte write is complete, status register bit SR.4 should be checked. If word/byte write error is detected, the status register should be cleared. The internal WSM verify only detects errors for "1"s that do not successfully write to "0"s. The CUI remains in read status register mode until it receives another command.

Reliable word/byte writes can only occur when V

= VCC1/2 and VPP = VPPH1/2/3. In the absence of this high voltage, memory contents are protected against word/byte writes. If word/byte write is attempted while V

PP ≤ VPPLK, status register bits

SR.3 and SR.4 will be set to "1". Successful word/byte write requires that the corresponding block lock-bit be cleared or, if set, that WP# = V

IH.

If word/byte write is attempted when the corresponding block lock-bit is set and WP# = V

IL,

SR.1 and SR.4 will be set to "1". Word/byte write operations with V

IL < WP# < VIH produce spurious

results and should not be attempted.

4.9 Multi Word/Byte Write Command

Multi word/byte write is executed by at least fourcycle or up to 35-cycle command sequence. Up to 32 bytes in x8 mode (16 words in x16 mode) can be loaded into the buffer and written to the flash array. First, multi word/byte write setup (E8H) is written with the write address. At this point, the

device automatically outputs extended status register data (XSR) when read (see Fig. 6 and Fig. 7). If extended status register bit XSR.7 is 0, no Multi Word/Byte Write command is available and multi word/byte write setup which just has been written is ignored. To retry, continue monitoring XSR.7 by writing multi word/byte write setup with write address until XSR.7 transitions to "1". When XSR.7 transitions to "1", the device is ready for loading the data to the buffer. A word/byte count (N)–1 is written with write address. After writing a word/byte count (N)–1, the device automatically turns back to output status register data. The word/byte count (N)–1 must be less than or equal to 1FH in x8 mode (0FH in x16 mode). On the next write, device start address is written with buffer data. Subsequent writes provide additional device address and data, depending on the count. All subsequent address must lie within the start address plus the count. After the final buffer data is written, write confirm (D0H) must be written. This initiates WSM to begin copying the buffer data to the flash array. An invalid Multi Word/Byte Write command sequence will result in both status register bits SR.4 and SR.5 being set to "1". For additional multi word/byte write, write another multi word/byte write setup and check XSR.7. The Multi Word/Byte Write command can be queued while WSM is busy as long as XSR.7 indicates "1", because LH28F320S3TD-L10 has two buffers. If an error occurs while writing, the device will stop writing and flush next Multi Word/Byte Write command loaded in Multi Word/Byte Write command. Status register bit SR.4 will be set to "1". No Multi Word/Byte Write command is available if either SR.4 or SR.5 is set to "1". SR.4 and SR.5 should be cleared before issuing Multi Word/Byte Write command. If a Multi Word/Byte Write command is attempted past an erase block boundary, the device will write the data to flash array up to an erase block boundary and then stop writing. Status register bits SR.4 and SR.5 will be set to "1".

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Reliable multi byte writes can only occur when VCC = VCC1/2 and VPP = VPPH1/2/3. In the absence of this high voltage, memory contents are protected against multi word/byte writes. If multi word/byte write is attempted while V

PP ≤ VPPLK, status

register bits SR.3 and SR.4 will be set to "1". Successful multi word/byte write requires that the corresponding block lock-bit be cleared or, if set, that WP# = V

IH. If multi byte write is attempted

when the corresponding block lock-bit is set and WP# = V

IL, SR.1 and SR.4 will be set to "1".

4.10 Block Erase Suspend Command

The Block Erase Suspend command allows block erase interruption to read or (multi) word/byte write data in another block of memory. Once the block erase process starts, writing the Block Erase Suspend command requests that the WSM suspend the block erase sequence at a predetermined point in the algorithm. The device outputs status register data when read after the Block Erase Suspend command is written. Polling status register bits SR.7 and SR.6 can determine when the block erase operation has been suspended (both will be set to "1"). STS will also transition to High Z. Specification t the block erase suspend latency.

At this point, a Read Array command can be written to read data from blocks other than that which is suspended. A (Multi) Word/Byte Write command sequence can also be issued during erase suspend to program data in other blocks. Using the (Multi) Word/Byte Write Suspend command (see Section 4.11), a (multi) word/byte write operation can also be suspended. During a (multi) word/byte write operation with block erase suspended, status register bit SR.7 will return to "0" and the STS (if set to RY/BY#) output will transition

OL. However, SR.6 will remain "1" to indicate

to V block erase suspend status.

The only other valid commands while block erase is

WHRH2 defines

suspended are Read Status Register and Block Erase Resume. After a Block Erase Resume command is written to the flash memory, the WSM will continue the block erase process. Status register bits SR.6 and SR.7 will automatically clear and STS will return to V

OL. After the Erase Resume

command is written, the device automatically outputs status register data when read (see Fig. 8).

PP must remain at V PPH1/2/3 (the same VPP level

V used for block erase) while block erase is suspended. RP# must also remain at V

IH. Block

erase cannot resume until (multi) word/byte write operations initiated during block erase suspend have completed.

4.11 (Multi) Word/Byte Write Suspend Command

The (Multi) Word/Byte Write Suspend command allows (multi) word/byte write interruption to read data in other flash memory locations. Once the (multi) word/byte write process starts, writing the (Multi) Word/Byte Write Suspend command requests that the WSM suspend the (multi) word/byte write sequence at a predetermined point in the algorithm. The device continues to output status register data when read after the (Multi) Word/Byte Write Suspend command is written. Polling status register bits SR.7 and SR.2 can determine when the (multi) word/byte write operation has been suspended (both will be set to "1"). STS will also transition to High Z. Specification

WHRH1 defines the (multi) word/byte write suspend

t latency.

At this point, a Read Array command can be written to read data from locations other than that which is suspended. The only other valid commands while (multi) word/byte write is suspended are Read Status Register and (Multi) Word/Byte Write Resume. After (Multi) Word/Byte Write Resume command is written to the flash memory, the WSM will continue the (multi) word/byte write process. Status register bits SR.2

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LH28F320S3TD-L10

and SR.7 will automatically clear and STS will return to V

OL. After the (Multi) Word/Byte Write

command is written, the device automatically outputs status register data when read (see Fig. 9).

PP must remain at V PPH1/2/3 (the same VPP level

V used for (multi) word/byte write) while in (multi) word/byte write suspend mode. WP# must also remain at V

IH or VIL.

4.12 Set Block Lock-Bit Command

A flexible block locking and unlocking scheme is enabled via block lock-bits. The block lock-bits gate program and erase operations. With WP# = V individual block lock-bits can be set using the Set Block Lock-Bit command. See Table 12 for a summary of hardware and software write protection options.

Set block lock-bit is executed by a two-cycle command sequence. The set block lock-bit setup along with appropriate block or device address is written followed by either the set block lock-bit confirm (and an address within the block to be locked). The WSM then controls the set block lockbit algorithm. After the sequence is written, the device automatically outputs status register data when read (see Fig. 10). The CPU can detect the completion of the set block lock-bit event by analyzing the STS pin output or status register bit SR.7.

When the set block lock-bit operation is complete, status register bit SR.4 should be checked. If an error is detected, the status register should be cleared. The CUI will remain in read status register mode until a new command is issued.

This two-step sequence of set-up followed by execution ensures that block lock-bits are not accidentally set. An invalid Set Block Lock-Bit command will result in status register bits SR.4 and SR.5 being set to "1". Also, reliable operations occur only when V

CC = VCC1/2 and VPP = VPPH1/2/3.

IH,

In the absence of this high voltage, block lock-bit contents are protected against alteration.

A successful set block lock-bit operation requires WP# = V

IH. If it is attempted with WP# = VIL, SR.1

and SR.4 will be set to "1" and the operation will fail. Set block lock-bit operations with WP# < V produce spurious results and should not be attempted.

4.13 Clear Block Lock-Bits Command

All set block lock-bits are cleared in parallel via the Clear Block Lock-Bits command. With WP# = V block lock-bits can be cleared using only the Clear Block Lock-Bits command. See Table 12 for a summary of hardware and software write protection options.

Clear block lock-bits operation is executed by a two-cycle command sequence. A clear block lockbits setup is first written. After the command is written, the device automatically outputs status register data when read (see Fig. 11). The CPU can detect completion of the clear block lock-bits event by analyzing the STS pin output or status register bit SR.7.

When the operation is complete, status register bit SR.5 should be checked. If a clear block lock-bits error is detected, the status register should be cleared. The CUI will remain in read status register mode until another command is issued.

This two-step sequence of set-up followed by execution ensures that block lock-bits are not accidentally cleared. An invalid Clear Block LockBits command sequence will result in status register bits SR.4 and SR.5 being set to "1". Also, a reliable clear block lock-bits operation can only occur when

CC = VCC1/2 and VPP = VPPH1/2/3. If a clear block

V lock-bits operation is attempted while V

PP ≤ VPPLK,

SR.3 and SR.5 will be set to "1". In the absence of this high voltage, the block lock-bit contents are

IH,

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LH28F320S3TD-L10

protected against alteration. A successful clear block lock-bits operation requires WP# = V attempted with WP# = V

IL, SR.1 and SR.5 will be

IH. If it is

set to "1" and the operation will fail. Clear block lock-bits operation with V

IH < RP# produce spurious

results and should not be attempted.

If a clear block lock-bits operation is aborted due to

PP or VCC transition out of valid range or RP#

V active transition, block lock-bit values are left in an undetermined state. A repeat of clear block lock-bits is required to initialize block lock-bit contents to known values.

4.14 STS Configuration Command

The Status (STS) pin can be configured to different states using the STS Configuration command. Once the STS pin has been configured, it remains in that configuration until another configuration command is issued, the device is powered down or RP# is set to V after exit from deep power-down mode, the STS pin defaults to RY/BY# operation where STS low indicates that the WSM is busy. STS High Z indicates that the WSM is ready for a new operation.

To reconfigure the STS pin to other modes, the STS Configuration is issued followed by the appropriate configuration code. The three alternate

IL. Upon initial device power-up and

configurations are all pulse mode for use as a system interrupt. The STS Configuration command functions independently of the V RP# must be V

Table 11 STS Configuration Coding Description

CONFIGURATION

BITS

00H

01H

02H

03H

IH.

Set STS pin to default level mode (RY/BY#). RY/BY# in the default level-mode of operation will indicate WSM status condition. Set STS pin to pulsed output signal for specific erase operation. In this mode, STS provides low pulse at the completion of Block Erase, Bank Erase and Clear Block Lock-Bits operations. Set STS pin to pulsed output signal for a specific write operation. In this mode, STS provides low pulse at the completion of (Multi) Byte Write and Set Block Lock-Bit operation. Set STS pin to pulsed output signal for specific write and erase operation. STS provides low pulse at the completion of Block Erase, Bank Erase, (Multi) Word/Byte Write and Block Lock-Bit Configuration operations.

PP voltage and

EFFECTS

Table 12 Write Protection Alternatives

OPERATION

Block Erase or 0 VIL or VIH Block Erase and (Multi) Word/Byte Write Enabled (Multi) Word/Byte Write VIH Block Lock-Bit Override. Block Erase and (Multi) Word/Byte Write Enabled

Bank Erase

Set Block Lock-Bit X

Clear Block Lock-Bits X

BLOCK

LOCK-BIT

0, 1 V

XVIH All blocks are erased

WP# EFFECT

VIL Block is Locked. Block Erase and (Multi) Word/Byte Write Disabled

IL All unlocked blocks are erased, locked blocks are not erased

IL Set Block Lock-Bit Disabled

VIH Set Block Lock-Bit Enabled V

IL Clear Block Lock-Bits Disabled

VIH Clear Block Lock-Bits Enabled

- 23 -

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LH28F320S3TD-L10

Table 13.1 Status Register Definition

WSMS BESS ECBLBS WSBLBS VPPS WSS DPS R

76543210

SR.7 = WRITE STATE MACHINE STATUS (WSMS)

1 = Ready 0 = Busy

SR.6 = BLOCK ERASE SUSPEND STATUS (BESS)

1 = Block Erase Suspended 0 = Block Erase in Progress/Completed

SR.5 =

ERASE AND CLEAR BLOCK LOCK-BITS STATUS

(ECBLBS) 1 = Error in Erase or Clear Block Lock-Bits 0 = Successful Erase or Clear Block Lock-Bits

SR.4 =

WRITE AND SET BLOCK LOCK-BIT STATUS

(WSBLBS) 1 = Error in Write or Set Block Lock-Bit 0 = Successful Write or Set Block Lock-Bit

SR.3 = V

PP STATUS (VPPS) PP Low Detect, Operation Abort

1= V 0= VPP OK

SR.2 = WRITE SUSPEND STATUS (WSS)

1 = Write Suspended 0 = Write in Progress/Completed

SR.1 = DEVICE PROTECT STATUS (DPS)

1 = Block Lock-Bit and/or WP# Lock Detected,

Operation Abort

0 = Unlock

SR.0 =

RESERVED FOR FUTURE ENHANCEMENTS (R)

NOTES :

Check STS or SR.7 to determine block erase, bank erase, (multi) word/byte write or block lock-bit configuration completion. SR.6-0 are invalid while SR.7 = "0".

If both SR.5 and SR.4 are "1"s after a block erase, bank erase, (multi) word/byte write, block lock-bit configuration or STS configuration attempt, an improper command sequence was entered.

SR.3 does not provide a continuous indication of V The WSM interrogates and indicates the V block erase, bank erase, (multi) word/byte write or block lockbit configuration command sequences. SR.3 is not guaranteed to reports accurate feedback only when V

SR.1 does not provide a continuous indication of block lock-bit values. The WSM interrogates block lock-bit, and WP# only after block erase, bank erase, (multi) word/byte write or block lock-bit configuration command sequences. It informs the system, depending on the attempted operation, if the block lock-bit is set and/or WP# is not V configuration codes after writing the Read Identifier Codes command indicates block lock-bit status.

SR.0 is reserved for future use and should be masked out when polling the status register.

PP level only after

PP ≠ VPPH1/2/3.

IH. Reading the block lock

PP level.

Table 13.2 Extended Status Register Definition

SMSRRRRRRR

76543210

NOTES :

XSR.7 = STATE MACHINE STATUS (SMS)

1 = Multi Word/Byte Write available 0 = Multi Word/Byte Write not available

XSR.6-0 =

RESERVED FOR FUTURE ENHANCEMENTS (R)

After issue a Multi Word/Byte Write command : XSR.7 indicates that a next Multi Word/Byte Write command is available.

XSR.6-0 are reserved for future use and should be masked out when polling the extended status register.

- 24 -

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LH28F320S3TD-L10

Block Erase

Complete

Start

Write 70H

Read

Status Register

Yes

SR.7 =

Write 20H,

Block Address

Write D0H,

Block Address

Suspend Block

Erase Loop

Read

Status Register

Full Status

Check if Desired

SR.3 =

FULL STATUS CHECK PROCEDURE

Read Status Register

Data (See Above)

PP Range Error

SR.1 =

Device Protect Error

BUS

OPERATION

COMMAND

COMMENTS

Standby

Check SR.1 1 = Device Protect Detect WP# = VIL, Block Lock-Bit is Set Only required for systems implementing block lock-bit configuration

Check SR.5 1 = Block Erase Error

SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear Status Register command in cases where multiple blocks are erased before full status is checked.

If error is detected, clear the status register before attempting retry or other error recovery.

Block Erase

Successful

Repeat for subsequent block erasures.

Full status check can be done after each block erase or after a sequence of block erasures.

Write FFH after the last block erase operation to place device in read array mode.

SR.4, 5 =

Command Sequence

Error

SR.5 =

Block Erase

Error

Standby

Check SR.3 1 = V

PP Error Detect

Standby

Check SR.4, 5 Both 1 = Command Sequence Error

BUS

OPERATION

Write

Read

Standby

COMMAND

Read Status

COMMENTS

Data = 70H Addr = X

Status Register Data

Check SR.7 1 = WSM Ready 0 = WSM Busy

Erase

Confirm

Erase Setup

Write

Read

Data = D0H Addr = Within Block to be Erased

Data = 20H Addr = Within Block to be Erased

Suspend

Block Erase

Fig. 3 Automated Block Erase Flowchart

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Page 26

LH28F320S3TD-L10

Bank Erase

Complete

Start

Write 70H

Read

Status Register

SR.7 =

Write 30H

Write D0H

Read

Status Register

Full Status

Check if Desired

SR.3 =

FULL STATUS CHECK PROCEDURE

Read Status Register

Data (See Above)

PP Range Error

SR.4, 5 =

Command Sequence

Error

BUS

OPERATION

COMMAND

COMMENTS

Standby

Check SR.5 1 = Bank Erase Error

SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear Status Register command in cases where multiple blocks are erased before full status is checked.

If error is detected, clear the status register before attempting retry or other error recovery.

Bank Erase

Successful

Full full status check can be done after each bank erase. Write FFH after the last bank erase operation to place bank in read array mode.

SR.5 =

Bank Erase Error

Standby

Check SR.3 1 = V

PP Error Detect

Standby

Check SR.4, 5 Both 1 = Command Sequence Error

BUS

OPERATION

Write

Read

Standby

COMMAND

Read Status

COMMENTS

Data = 70H Addr = X

Status Register Data

Check SR.7 1 = WSM Ready 0 = WSM Busy

Bank Erase

Setup

Bank Erase

Setup

Write

Read

Data = D0H Addr = X

Data = 30H Addr = X

Fig. 4 Automated Bank Erase Flowchart

- 26 -

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LH28F320S3TD-L10

Word/Byte Write

Complete

Start

Write 70H

Read

Status Register

Yes

SR.7 =

Write 40H or 10H,

Address

Write Word/Byte

Data and Address

Suspend Word/Byte

Write Loop

Read

Status Register

Full Status

Check if Desired

BUS

OPERATION

COMMAND

COMMENTS

Standby

Check SR.1 1 = Device Protect Detect WP# = V

IL, Block Lock-Bit is Set

Only required for systems implementing block lock-bit configuration

SR.4, SR.3 and SR.1 are only cleared by the Clear Status Register command in cases where multiple locations are written before full status is checked.

If error is detected, clear the status register before attempting retry or other error recovery.

Repeat for subsequent word/byte writes.

SR full status check can be done after each word/byte write or after a sequence of word/byte writes.

Write FFH after the last word/byte write operation to place device in read array mode.

Standby

Check SR.3 1 = V

PP Error Detect

Standby

Check SR.4 1 = Data Write Error

BUS

OPERATION

Write

Read

Standby

COMMAND

Read Status

COMMENTS

Data = 70H Addr = X

Status Register Data

Check SR.7 1 = WSM Ready 0 = WSM Busy

Word/Byte

Write

Setup Word/

Byte Write

Write

Read

Data = Data to be Written Addr = Location to be Written

Data = 40H or 10H Addr = Location to be Written

SR.3 =

FULL STATUS CHECK PROCEDURE

Read Status Register

Data (See Above)

PP Range Error

SR.1 =

Device Protect Error

Word/Byte Write

Successful

SR.4 =

Word/Byte Write

Error

Suspend

Word/Byte

Write

Fig. 5 Automated Word/Byte Write Flowchart

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LH28F320S3TD-L10

Start

Write E8H,

Start Address

Read

Status Register

XSR.7 =

Write Word or Byte Count (N)

Start Address

Write Buffer

Start Address

X = 0

Write Buffer Data,

Device Address

NOTES :

1. Byte or word count values on DQ

0-7 are loaded into the

count register.

2. Write buffer contents will be programmed at the start address.

3. Align the start address on a write buffer boundary for maximum programming performance.

4. The device aborts the Multi Word/Byte Write command if the current address is outside of the original block address.

5. The status register indicates an "improper command sequence" if the Multi Word/Byte Write command is aborted. Follow this with a Clear Status Register command.

SR full status check can be done after each multi word/byte write or after a sequence of multi word/byte writes.

Write FFH after the last multi word/byte write operation to place device in read array mode.

BUS

OPERATION

Write

Read

Standby

Write (NOTE 1)

COMMAND

Setup Multi

Word/Byte Write

COMMENTS

Data = E8H Addr = Start Address

Data = Word or Count (N)_1 Addr = Start Address

Write (NOTE 2, 3)

Data = Buffer Data Addr = Start Address

Write (NOTE 4, 5)

Data = Buffer Data Addr = Start Address

Write

Data = D0H Addr = X

Read Status Register Data

Standby

Extended Status Register Data

Check SR.7 1 = WSM Ready 0 = WSM Busy

Multi Word/Byte

Write Abort

Yes

X = N

Write Buffer

Time-Out

Yes

Full Status

Check if Desired

SR.7 =

Multi Word/Byte Write Complete

X = X + 1

Write D0H

Read

Status Register

Yes

Suspend Multi Word/Byte

Write Loop

Write Another

Block Address

Check XSR.7 1 = Multi Word/Byte Ready 0 = Multi Word/Byte Busy

Yes

Abort

Buffer Write

Command?

Another

Buffer

Write ?

Suspend

Multi Word/Byte

Write

Fig. 6 Automated Multi Word/Byte Write Flowchart

- 28 -

Page 29

LH28F320S3TD-L10

SR.3 =

FULL STATUS CHECK PROCEDURE FOR MULTI WORD/BYTE WRITE OPERATION

Read Status Register

PP Range Error

SR.1 =

Device Protect Error

BUS

OPERATION

COMMAND

Standby

Check SR.1 1 = Device Protect Detect WP# = VIL, Block Lock-Bit is Set Only required for systems implementing block lock-bit configuration

SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear Status Register command in cases where multiple locations are written before full status is checked.

If error is detected, clear the status register before attempting retry or other error recovery.

SR.4, 5 =

Command Sequence

Error

Multi Word/Byte Write

Successful

SR.4 =

Multi Word/Byte

Write Error

Standby

Check SR.3 1 = V

PP Error Detect

Standby

Check SR.4, 5 Both 1 = Command Sequence Error

Standby

Check SR.4 1 = Data Write Error

COMMENTS

Fig. 7 Full Status Check Procedure for Automated Multi Word/Byte Write

- 29 -

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LH28F320S3TD-L10

Block Erase

Resumed

Start

Write B0H

Read

Status Register

SR.7 =

BUS

OPERATION

Write

Read

Standby

COMMAND

Erase

Suspend

COMMENTS

Data = B0H Addr = X

Status Register Data Addr = X

Check SR.7 1 = WSM Ready 0 = WSM Busy

Check SR.6 1 = Block Erase Suspended 0 = Block Erase Completed

SR.6 =

Read or

Write?

Done?

Write D0H

Block Erase

Completed

Write FFH

Read

Array Data

Yes

Write

Erase

Resume

Data = D0H Addr = X

Read

(Multi) Word/Byte Write

Read Array Data

(Multi) Word/Byte Write

Loop

Fig. 8 Block Erase Suspend/Resume Flowchart

- 30 -

Page 31

LH28F320S3TD-L10

(Multi) Word/Byte Write

Resumed

Start

Write B0H

Read

Status Register

SR.7 =

Write FFH

BUS

OPERATION

Write

Read

Standby

COMMAND

(Multi) Word/Byte

Write Suspend

COMMENTS

Data = B0H Addr = X

Status Register Data Addr = X

Check SR.7 1 = WSM Ready 0 = WSM Busy

Check SR.2 1 = (Multi) Word/Byte Write

Suspended

0 = (Multi) Word/Byte Write

Completed

Read Array

SR.2 =

Read

Array Data

Done

Reading

Write D0H

(Multi) Word/Byte Write

Completed

Write FFH

Read

Array Data

Yes

Write

Read

Write

(Multi) Word/Byte

Write Resume

Data = FFH Addr = X

Read array locations other than that being written.

Data = D0H Addr = X

Fig. 9 (Multi) Word/Byte Write Suspend/Resume Flowchart

- 31 -

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LH28F320S3TD-L10

Set Block Lock-Bit

Complete

Start

Write 60H,

Block Address

Write 01H,

Block Address

Read

Status Register

SR.7 =

Full Status

Check if Desired

Repeat for subsequent block set operations. Full status check can be done after each block lock-bit set

operation or after a sequence of block lock-bit set operations. Write FFH after the last block lock-bit set operation to place

device in read array mode.

BUS

OPERATION

Write

Read

Standby

COMMAND

Set Block

Lock-Bit Setup

COMMENTS

Data = 60H Addr = Block Address

Data = 01H Addr = Block Address

Status Register Data

Check SR.7 1 = WSM Ready 0 = WSM Busy

SR.3 =

FULL STATUS CHECK PROCEDURE

Read Status Register

Data (See Above)

PP Range Error

SR.1 =

Device Protect Error

BUS

OPERATION

COMMAND

COMMENTS

Standby

Check SR.1 1 = Device Protect Detect WP# = V

Check SR.4 1 = Set Block Lock-Bit Error

SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear Status Register command in cases where multiple block lock-bits are set before full status is checked.

If error is detected, clear the status register before attempting retry or other error recovery.

Set Block

Lock-Bit Confirm

Set Block Lock-Bit

Successful

SR.4, 5 =

Command Sequence

Error

SR.4 =

Set Block Lock-Bit

Error

Standby

Check SR.3 1 = V

PP Error Detect

Standby

Check SR.4, 5 Both 1 = Command Sequence Error

Fig. 10 Set Block Lock-Bit Flowchart

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Page 33

LH28F320S3TD-L10

Clear Block Lock-Bits

Complete

Start

Write 60H

Write D0H

Read

Status Register

SR.7 =

Full Status

Check if Desired

Write FFH after the last clear block lock-bits operation to place device in read array mode.

BUS

OPERATION

Write

Read

Standby

COMMAND

Clear Block

Lock-Bits

Setup

COMMENTS

Data = 60H Addr = X

Data = D0H Addr = X

Status Register Data

Check SR.7 1 = WSM Ready 0 = WSM Busy

SR.3 =

FULL STATUS CHECK PROCEDURE

Read Status Register

Data (See Above)

PP Range Error

SR.1 =

Device Protect Error

BUS

OPERATION

COMMAND

COMMENTS

Standby

Check SR.1 1 = Device Protect Detect WP# = V

Check SR.5 1 = Clear Block Lock-Bits Error

SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear Status Register command.

If error is detected, clear the status register before attempting retry or other error recovery.

Clear Block

Lock-Bits

Confirm

Clear Block Lock-Bits

Successful

SR.4, 5 =

Command Sequence

Error

SR.5 =

Clear Block Lock-Bits

Error

Standby

Check SR.3 1 = V

PP Error Detect

Standby

Check SR.4, 5 Both 1 = Command Sequence Error

Fig. 11 Clear Block Lock-Bits Flowchart

- 33 -

Page 34

5 DESIGN CONSIDERATIONS

5.1 Three-Line Output Control

The device will often be used in large memory arrays. SHARP provides three control inputs to accommodate multiple memory connections. Threeline control provides for :

a. Lowest possible memory power consumption. b. Complete assurance that data bus contention

will not occur.

To use these control inputs efficiently, an address decoder should enable BE# while OE# should be connected to all memory devices and the system’s READ# control line. This assures that only selected memory devices have active outputs while deselected memory devices are in standby mode. RP# should be connected to the system POWERGOOD signal to prevent unintended writes during system power transitions. POWERGOOD should also toggle during system reset.

5.2 STS and Block Erase, Bank Erase, (Multi) Word/Byte Write and Block Lock-Bit Configuration Polling

STS is an open drain output that should be connected to V hardware method of detecting block erase, bank erase, (multi) word/byte write and block lock-bit configuration completion. In default mode, it transitions low after block erase, bank erase, (multi) word/byte write or block lock-bit configuration commands and returns to V finished executing the internal algorithm. For alternate STS pin configurations, see the Configuration command (Table 3 and Section 4.14 ).

STS can be connected to an interrupt input of the system CPU or controller. It is active at all times. STS, in default mode, is also High Z when the device is in block erase suspend (with (multi) word/byte write inactive), (multi) word/byte write suspend or deep power-down modes.

CC by a pullup resistor to provide a

OH when the WSM has

LH28F320S3TD-L10

5.3 Power Supply Decoupling

Flash memory power switching characteristics require careful device decoupling. System designers are interested in three supply current issues; standby current levels, active current levels and transient peaks produced by falling and rising edges of BE# and OE#. Transient current magnitudes depend on the device outputs’ capacitive and inductive loading. Two-line control and proper decoupling capacitor selection will suppress transient voltage peaks. Each device should have a 0.1 µF ceramic capacitor connected between its V

CC and GND and between its VPP

and GND. These high-frequency, low inductance capacitors should be placed as close as possible to package leads. Additionally, for every eight devices, a 4.7 µF electrolytic capacitor should be placed at the array’s power supply connection between V

and GND. The bulk capacitor will overcome voltage slumps caused by PC board trace inductance.

5.4 VPP Trace on Printed Circuit Boards

Updating flash memories that reside in the target system requires that the printed circuit board designers pay attention to the V trace. The V

PP pin supplies the memory cell current

PP power supply

for block erase, bank erase, (multi) word/byte write and block lock-bit configuration. Use similar trace widths and layout considerations given to the V

power bus. Adequate VPP supply traces and decoupling will decrease V

PP voltage spikes and

overshoots.

5.5 VCC, VPP, RP# Transitions

Block erase, bank erase, (multi) word/byte write and block lock-bit configuration are not guaranteed if V

PP falls outside of a valid VPPH1/2/3 range, VCC

falls outside of a valid VCC1/2 range, or RP# = VIL.

PP error is detected, status register bit SR.3 is

If V set to "1" along with SR.4 or SR.5, depending on the attempted operation. If RP# transitions to V during block erase, bank erase, (multi) word/byte write or block lock-bit configuration, STS (if set to

- 34 -

Page 35

LH28F320S3TD-L10

RY/BY# mode) will remain low until the reset operation is complete. Then, the operation will abort and the device will enter deep power-down. The aborted operation may leave data partially altered. Therefore, the command sequence must be repeated after normal operation is restored. Device power-off or RP# transitions to V

IL clear the status

The CUI latches commands issued by system software and is not altered by V

PP or BE#

transitions or WSM actions. Its state is read array mode upon power-up, after exit from deep powerdown or after V

CC transitions below VLKO.

After block erase, bank erase, (multi) word/byte write or block lock-bit configuration, even after V

transitions down to VPPLK, the CUI must be placed in read array mode via the Read Array command if subsequent access to the memory array is desired.

5.6 Power-Up/Down Protection

The device is designed to offer protection against accidental block and bank erasure, (multi) word/byte writing or block lock-bit configuration during power transitions. Upon power-up, the device is indifferent as to which power supply (V or VCC) powers-up first. Internal circuitry resets the CUI to read array mode at power-up.

5.7 Power Consumption

When designing portable systems, designers must consider battery power consumption not only during device operation, but also for data retention during system idle time. Flash memory’s nonvolatility increases usable battery life because data is retained when system power is removed.

In addition, deep power-down mode ensures extremely low power consumption even when system power is applied. For example, portable computing products and other power sensitive applications that use an array of devices for solidstate storage can consume negligible power by lowering RP# to V access is again needed, the devices can be read following the t required after RP# is first raised to V

6.2.4 through 6.2.6 "AC CHARACTERISTICS READ-ONLY and WRITE OPERATIONS" and Fig. 15, Fig. 16, Fig. 17 and Fig. 18 for more

information.

IL standby or sleep modes. If

PHQV and tPHWL wake-up cycles

IH. See Section

A system designer must guard against spurious writes for V

CC voltages above VLKO when VPP is

active. Since both WE# and BE# must be low for a command write, driving either to V

IH will inhibit

writes. The CUI’s two-step command sequence architecture provides added level of protection against data alteration.

In-system block lock and unlock capability prevents inadvertent data alteration. The device is disabled while RP# = V

IL regardless of its control inputs

state.

- 35 -

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LH28F320S3TD-L10

6 ELECTRICAL SPECIFICATIONS

6.1 Absolute Maximum Ratings

Operating Temperature

During Read, Erase, Write and

...

Block Lock-Bit Configuration Temperature under Bias

Storage Temperature

........................

Voltage On Any Pin

(except VCC, VPP)

VCC Supply Voltage

....

– 0.5 V to V

................

VPP Update Voltage during

Erase, Write and Block Lock-Bit Configuration..– 0.2 to +7.0 V

Output Short Circuit Current

0 to +70°C

.............

– 65 to +125°C

CC+0.5 V

– 0.2 to +7.0 V

................

100 mA

–10 to +80°C

∗

(NOTE 1)

(NOTE 2)

(NOTE 3)

NOTICE : The specifications are subject to change without notice. Verify with your local SHARP sales office that you have the latest datasheet before finalizing a design.

∗

WARNING : Stressing the device beyond the

Absolute Maximum Ratings" may cause permanent damage. These are stress ratings only. Operation beyond the "Operating Conditions" is not recommended and extended exposure beyond the "Operating Conditions" may affect device reliability.

NOTES :

1. Operating temperature is for commercial product defined

by this specification.

2. All specified voltages are with respect to GND. Minimum

DC voltage is – 0.5 V on input/output pins and –0.2 V on V

CC and VPP pins. During transitions, this level may

undershoot to –2.0 V for periods < 20 ns. Maximum DC voltage on input/output pins and V which, during transitions, may overshoot to V for periods < 20 ns.

3. Output shorted for no more than one second. No more

than one output shorted at a time.

CC is VCC+0.5 V

CC+2.0 V

6.2 Operating Conditions

SYMBOL

TA Operating Temperature VCC1 VCC Supply Voltage (2.7 to 3.6 V) 2.7 3.6 V

CC2 VCC Supply Voltage (3.3±0.3 V) 3.0 3.6 V

6.2.1 CAPACITANCE

SYMBOL

CIN Input Capacitance 2 14 20 pF VIN = 0.0 V COUT Output Capacitance 18 24 pF VOUT = 0.0 V

NOTES :

1. Sampled, not 100% tested.

2. BE

0# and BE1L#, BE1H# have half the value of this.

PARAMETER MIN. MAX. UNIT TEST CONDITION

(NOTE 1)

TA = +25˚C, f = 1 MHz

PARAMETER NOTE TYP. MAX. UNIT TEST CONDITION

+70

C Ambient Temperature

- 36 -

Page 37

LH28F320S3TD-L10

TEST POINTSINPUT OUTPUT

1.35

2.7

0.0

1.5

3.0

0.0

TEST POINTSINPUT OUTPUT

DEVICE UNDER

TEST

L Includes Jig

Capacitance

RL = 3.3 kΩ

OUT

1.3 V

1N914

6.2.2 AC INPUT/OUTPUT TEST CONDITIONS

AC test inputs are driven at 2.7 V for a Logic "1" and 0.0 V for a Logic "0". Input timing begins, and output timing ends, at 1.35 V. Input rise and fall times (10% to 90%) < 10 ns.

Fig. 12 Transient Input/Output Reference Waveform for VCC = 2.7 to 3.6 V

AC test inputs are driven at 3.0 V for a Logic "1" and 0.0 V for a Logic "0". Input timing begins, and output timing ends, at 1.5 V. Input rise and fall times (10% to 90%) < 10 ns.

Fig. 13 Transient Input/Output Reference Waveform for VCC = 3.3±0.3 V

Test Configuration Capacitance Loading Value

TEST CONFIGURATION CL (pF)

CC = 3.3±0.3 V, 2.7 to 3.6 V 50

Fig. 14 Transient Equivalent Testing

Load Circuit

- 37 -

Page 38

LH28F320S3TD-L10

6.2.3 DC CHARACTERISTICS

Following is the supply current of one bank. For the supply current of one device total, refer to NOTE 8.

SYMBOL

LI Input Load Capacitance 1 ±0.5 ±0.5 µA

LO Output Leakage Capacitance 1 ±0.5 ±0.5 µA

PARAMETER NOTE

VCC= 2.7 to 3.6 V

TYP. MAX. TYP. MAX.

20 100 20 100 µA V

ICCS VCC Standby Current

1, 3, BE# = RP# = V 6, 8 TTL Inputs

1414mAV

VCC Deep Power-Down

ICCD

Current IOUT (STS) = 0 mA

ICCR VCC Read Current

11515µA

1, 5, f = 5 MHz, I 6, 8 TTL Inputs

VCC Write Current 17 — — mA VPP = 2.7 to 3.6 V

ICCW ((Multi) W/B Write or 1, 7, 8 17 17 mA VPP = 3.3±0.3 V

Set Block Lock-Bit) 17 17 mA VPP = 5.0±0.5 V VCC Erase Current 17 — — mA VPP = 2.7 to 3.6 V

ICCE (Block Erase, Bank Erase, 1, 7, 8 17 17 mA VPP = 3.3±0.3 V

Clear Block Lock-Bits) 17 17 mA VPP = 5.0±0.5 V

CCWS VCC Write or Block Erase

ICCES Suspend Current

1, 2, 8 1 6 1 6 µA BE# = V

IPPS VPP Standby Current 1, 8 ±2 ±15 ±2 ±15 µA VPP ≤ VCC IPPR VPP Read Current 1 10 200 10 200 µA VPP > VCC

VPP Deep Power-Down

IPPD

Current

1 0.1 5 0.1 5 mA RP# = GND±0.2 V

VPP Write Current 80 — — mA VPP = 2.7 to 3.6 V

IPPW ((Multi) W/B Write or 1, 7, 8 80 80 mA VPP = 3.3±0.3 V

Set Block Lock-Bit) 80 80 mA VPP = 5.0±0.5 V VPP Erase Current 40 — — mA VPP = 2.7 to 3.6 V

IPPE (Block Erase, Bank Erase, 1, 7, 8 40 40 mA VPP = 3.3±0.3 V

Clear Block Lock-Bits) 40 40 mA VPP = 5.0±0.5 V

PPWS VPP Write or Block Erase

IPPES Suspend Current

1, 8 10 200 10 200 µA V

VCC = 3.3±0.3 V

UNIT

25 25 mA

30 30 mA

TEST

CONDITIONS

CC = VCC Max.

V VIN = VCC or GND

CC = VCC Max.

V VOUT = VCC or GND CMOS Inputs

CC = VCC Max.

CC±0.2 V

CC = VCC Max.

BE# = RP# = VIH RP# = GND±0.2 V

CMOS Inputs V

CC = VCC Max.

BE# = GND

OUT = 0 mA

CC = VCC Max.

BE# = V

f = 5 MHz, IOUT = 0 mA

PP = VPPH1/2/3

- 38 -

Page 39

6.2.3 DC CHARACTERISTICS (contd.)

SYMBOL

PARAMETER NOTE

VCC= 2.7 to 3.6 V

MIN. MAX. MIN. MAX.

VIL Input Low Voltage 7 – 0.5 0.8 –0.5 0.8 V V

IH Input High Voltage 7 2.0

OL Output Low Voltage 3, 7 0.4 0.4 V

Output High Voltage

OH1

(TTL)

3, 7 2.4 2.4 V

0.85 0.85

Output High Voltage

VOH2

(CMOS) V

3, 7

VCC VCC IOH = –2.5 mA

CC VCC

– 0.4 –0.4 IOH = –100 µA

VPP Lockout Voltage

PPLK

during Normal Operations VPP Voltage during Write

PPH1

or Erase Operations VPP Voltage during Write

PPH2

or Erase Operations VPP Voltage during Write

PPH3

or Erase Operations

LKO VCC Lockout Voltage 2.0 2.0 V

4, 7 1.5 1.5 V

2.7 3.6 V

3.0 3.6 3.0 3.6 V

4.5 5.5 4.5 5.5 V

NOTES :

1. All currents are in RMS unless otherwise noted. Typical values at nominal V

2. I

CCWS and ICCES are specified with the device de-

selected. If reading or (multi) word/byte writing in erase suspend mode, the device’s current draw is the sum of

CCWS or ICCES and ICCR or ICCW, respectively.

3. Includes STS.

4. Block erases, bank erases, (multi) word/byte writes and block lock-bit configurations are inhibited when V V

PPLK, and not guaranteed in the range between VPPLK

(max.) and VPPH1 (min.), between VPPH1 (max.) and

PPH2 (min.), between VPPH2 (max.) and VPPH3 (min.)

V and above V

CC voltage and TA = +25°C.

PP ≤

PPH3 (max.).

VCC = 3.3±0.3 V

+0.5 +0.5

2.0

5. Automatic Power Saving (APS) reduces typical I 3 mA at 2.7 V and 3.3 V V

6. CMOS inputs are either V inputs are either V

7. Sampled, not 100% tested.

8. These are the values of the current which is consumed within one bank area. The value for the bank0 and bank1 should added in order to calculate the value for the whole chip. If the bank0 is in write state and bank1 is in read state, the I in standby mode, the value for the device is 2 times the value in the above table.

IL or VIH.

LH28F320S3TD-L10

UNIT

CC = VCC Min.

V IOL = 2 mA VCC = VCC Min. I

OH = –2.5 mA

VCC = VCC Min.

CC = VCC Min.

CC in static operation.

CC±0.2 V or GND±0.2 V. TTL

CC = ICCW + ICCR. If both banks are

TEST

CONDITIONS

CCR to

- 39 -

Page 40

LH28F320S3TD-L10

6.2.4 AC CHARACTERISTICS - READ-ONLY OPERATIONS

• VCC = 2.7 to 3.6 V, TA = 0 to +70˚C

(NOTE 1)

VERSION LH28F320S3TD-L10

SYMBOL

PARAMETER NOTE TYP. MAX.

tAVAV Read Cycle Time 120 ns tAVQV Address to Output Delay 120 ns tELQV BE# to Output Delay 2 120 ns tPHQV RP# High to Output Delay 600 ns tGLQV OE# to Output Delay 2 50 ns tELQX BE# to Output in Low Z 3 0 ns tEHQZ BE# High to Output in High Z 3 50 ns tGLQX OE# to Output in Low Z 3 0 ns tGHQZ OE# High to Output in High Z 3 20 ns

t t

FLQV

tFHQV

Output Hold from Address, BE# or OE# Change,

Whichever Occurs First

30 ns

BYTE# to Output Delay 3 120 ns

tFLQZ BYTE# to Output in High Z 3 30 ns t

ELFL

ELFH

BE# Low to BYTE# High or Low 3 5 ns

•VCC = 3.3±0.3 V, TA = 0 to +70˚C VERSION LH28F320S3TD-L10

SYMBOL

PARAMETER NOTE TYP. MAX.

tAVAV Read Cycle Time 100 ns tAVQV Address to Output Delay 100 ns tELQV BE# to Output Delay 2 100 ns tPHQV RP# High to Output Delay 600 ns tGLQV OE# to Output Delay 2 45 ns tELQX BE# to Output in Low Z 3 0 ns tEHQZ BE# High to Output in High Z 3 50 ns tGLQX OE# to Output in Low Z 3 0 ns tGHQZ OE# High to Output in High Z 3 20 ns

FLQV

tFHQV

Output Hold from Address, BE# or OE# Change, Whichever Occurs First

30 ns

BYTE# to Output Delay 3 100 ns

tFLQZ BYTE# to Output in High Z 3 30 ns t

ELFL ELFH

BE# Low to BYTE# High or Low 3 5 ns

NOTES :

1. See AC Input/Output Reference Waveform (Fig. 12 and Fig. 13) for maximum allowable input slew rate.

2. OE# may be delayed up to t

3. Sampled, not 100% tested.

ELQV-tGLQV after the falling edge of BE# without impact on tELQV.

UNIT

- 40 -

Page 41

LH28F320S3TD-L10

ADDRESSES (A)

X# (E)

OE# (G)

WE# (W)

DATA (D/Q)

RP# (P)

VIL

VOH

VOL

VIH

VIL

Standby

Device

Address Selection Data Valid

Address Stable

High Z

Valid Output

High Z

GLQV

tELQV

tGLQX

tELQX

tAVQV

tPHQV

tAVAV

tEHQZ

tGHQZ

tOH

NOTE :

BEX# is defined as the latter of BE0# and BE1L#, BE1H# going Low or the first of BE0# and BE1L#, BE1H# going High.

Fig. 15 AC Waveform for Read Operations

- 41 -

Page 42

LH28F320S3TD-L10

ADDRESSES (A)

X# (E)

OE# (G)

BYTE# (F)

DATA (D/Q)

(DQ

0-DQ7)

Standby

Device

Address Selection Data Valid

Address Stable

VOH

VOL

VIH

VIL

DATA (D/Q)

(DQ

8-DQ15)

VOL

High Z

Data Output

High Z

Valid

Output

High Z High Z

Data

Output

AVAV

tEHQZ

tGHQZ

tGLQV

tELQV

tGLQX

tELQX

tOH

tAVFL = tELFL

tFLQV = tAVQV

tFLQZ

tELFL

tAVQV

NOTE :

BEX# is defined as the latter of BE0# and BE1L#, BE1H# going Low or the first of BE0# and BE1L#, BE1H# going High.

Fig. 16 BYTE# Timing Waveforms

- 42 -

Page 43

LH28F320S3TD-L10

6.2.5 AC CHARACTERISTICS - WRITE OPERATIONS

• VCC = 2.7 to 3.6 V, TA = 0 to +70˚C

(NOTE 1)

VERSION LH28F320S3TD-L10

SYMBOL

PARAMETER NOTE MIN. MAX.

tAVAV Write Cycle Time 120 ns tPHWL RP# High Recovery to WE# Going Low 2 1 µs tELWL BE# Setup to WE# Going Low 10 ns tWLWH WE# Pulse Width 50 ns tSHWH WP# VIH Setup to WE# Going High 2 100 ns tVPWH VPP Setup to WE# Going High 2 100 ns tAVWH Address Setup to WE# Going High 3 50 ns tDVWH Data Setup to WE# Going High 3 50 ns tWHDX Data Hold from WE# High 5 ns tWHAX Address Hold from WE# High 5 ns tWHEH BE# Hold from WE# High 10 ns tWHWL WE# Pulse Width High 30 ns tWHRL WE# High to STS Going Low 100 ns tWHGL Write Recovery before Read 0 ns tQVVL VPP Hold from Valid SRD, STS High Z 2, 4 0 ns t

QVSL WP# VIH Hold from Valid SRD, STS High Z 2, 4 0 ns

•VCC = 3.3±0.3 V, TA = 0 to +70˚C VERSION LH28F320S3TD-L10

SYMBOL

PARAMETER NOTE MIN. MAX.

tAVAV Write Cycle Time 100 ns tPHWL RP# High Recovery to WE# Going Low 2 1 µs tELWL BE# Setup to WE# Going Low 10 ns tWLWH WE# Pulse Width 50 ns tSHWH WP# VIH Setup to WE# Going High 2 100 ns tVPWH VPP Setup to WE# Going High 2 100 ns tAVWH Address Setup to WE# Going High 3 50 ns tDVWH Data Setup to WE# Going High 3 50 ns tWHDX Data Hold from WE# High 5 ns tWHAX Address Hold from WE# High 5 ns tWHEH BE# Hold from WE# High 10 ns tWHWL WE# Pulse Width High 30 ns tWHRL WE# High to STS Going Low 100 ns tWHGL Write Recovery before Read 0 ns tQVVL VPP Hold from Valid SRD, STS High Z 2, 4 0 ns t

QVSL WP# VIH Hold from Valid SRD, STS High Z 2, 4 0 ns

NOTES :

1. Read timing characteristics during block erase, bank erase, (multi) word/byte write and block lock-bit configuration operations are the same as during readonly operations. Refer to Section 6.2.4 "AC CHARACTERISTICS" for read-only operations.

2. Sampled, not 100% tested.

3. Refer to Table 3 for valid A bank erase, (multi) word/byte write or block lock-bit configuration.

4. V

PP should be held at VPPH1/2/3 until determination of

block erase, bank erase, (multi) word/byte write or block lock-bit configuration success (SR.1/3/4/5 = 0).

IN and DIN for block erase,

UNIT

- 43 -

Page 44

(NOTE 1) (NOTE 2) (NOTE 3) (NOTE 4) (NOTE 5) (NOTE 6)

VIL

VIH

High Z

VIH

VIL

VOL

VIL

VIH

VIL

VPPLK

VPPH1/2/3

VIH

VIL

ADDRESSES (A)

BEX# (E)

OE# (G)

WE# (W)

DATA (D/Q)

RP# (P)

VPP (V)

STS (R)

WP# (S)

VIL

VIH

AIN AIN

tAVAV tAVWH

tELWL tWHEH

tWHGL

tWHWL

tWHQV1/2/3/4

tWLWH tDVWH

tWHDX

Valid SRD

PHWL

tWHRL

tVPWH

tQVVL

DIN

High Z

DIN

tSHWH tQVSL

tWHAX

NOTES :

1. VCC power-up and standby.

2. Write erase or write setup.

3. Write erase confirm or valid address and data.

4. Automated erase or program delay.

5. Read status register data.

6. Write Read Array command.

7. B E High.

X# is defined as the latter of BE0# and BE1L#, BE1H# going Low or the first of BE0# and BE1L#, BE1H# going

Fig. 17 AC Waveform for WE#-Controlled Write Operations

LH28F320S3TD-L10

- 44 -

Page 45

LH28F320S3TD-L10

6.2.6 ALTERNATIVE BE#-CONTROLLED WRITES

(NOTE 1)

•VCC = 2.7 to 3.6 V, TA = 0 to +70˚C VERSION LH28F320S3TD-L10

SYMBOL

PARAMETER NOTE MIN. MAX.

tAVAV Write Cycle Time 120 ns tPHEL RP# High Recovery to BE# Going Low 2 1 µs tWLEL WE# Setup to BE# Going Low 0 ns tELEH BE# Pulse Width 70 ns tSHEH WP# VIH Setup to BE# Going High 2 100 ns tVPEH VPP Setup to BE# Going High 2 100 ns tAVEH Address Setup to BE# Going High 3 50 ns tDVEH Data Setup to BE# Going High 3 50 ns tEHDX Data Hold from BE# High 5 ns tEHAX Address Hold from BE# High 5 ns tEHWH WE# Hold from BE# High 0 ns tEHEL BE# Pulse Width High 25 ns tEHRL BE# High to STS Going Low 100 ns tEHGL Write Recovery before Read 0 ns tQVVL VPP Hold from Valid SRD, STS High Z 2, 4 0 ns t

QVSL WP# VIH Hold from Valid SRD, STS High Z 2, 4 0 ns

•V

CC = 3.3±0.3 V, TA = 0 to +70˚C

VERSION LH28F320S3TD-L10

SYMBOL

PARAMETER NOTE MIN. MAX.

tAVAV Write Cycle Time 100 ns tPHEL RP# High Recovery to BE# Going Low 2 1 µs tWLEL WE# Setup to BE# Going Low 0 ns tELEH BE# Pulse Width 70 ns tSHEH WP# VIH Setup to BE# Going High 2 100 ns tVPEH VPP Setup to BE# Going High 2 100 ns tAVEH Address Setup to BE# Going High 3 50 ns tDVEH Data Setup to BE# Going High 3 50 ns tEHDX Data Hold from BE# High 5 ns tEHAX Address Hold from BE# High 5 ns tEHWH WE# Hold from BE# High 0 ns tEHEL BE# Pulse Width High 25 ns tEHGL BE# High to STS Going Low 100 ns tEHRL Write Recovery before Read 0 ns tQVVL VPP Hold from Valid SRD, STS High Z 2, 4 0 ns t

QVSL WP# VIH Hold from Valid SRD, STS High Z 2, 4 0 ns

NOTES :

1. In systems where BE# defines the write pulse width (within a longer WE# timing waveform), all setup, hold and inactive WE# times should be measured relative to the BE# waveform.

2. Sampled, not 100% tested.

3. Refer to Table 3 for valid A bank erase, (multi) word/byte write or block lock-bit configuration.

PP should be held at VPPH1/2/3 until determination of

4. V block erase, bank erase, (multi) word/byte write or block lock-bit configuration success (SR.1/3/4/5 = 0).

IN and DIN for block erase,

UNIT

- 45 -

Page 46

(NOTE 1) (NOTE 2) (NOTE 3) (NOTE 4) (NOTE 5) (NOTE 6)

VIL

VIH

High Z

VIH

VIL

VOL

VIL

VIH

VIL

VPPLK

VPPH1/2/3

VIH

VIL

ADDRESSES (A)

WE# (W)

OE# (G)

BEX# (E)

DATA (D/Q)

RP# (P)

VPP (V)

STS (R)

WP# (S)

VIL

VIH

AIN AIN

tAVAV tAVEH

tWLEL tEHWH

tEHGL

tEHEL

tEHQV1/2/3/4

tELEH tDVEH

tEHDX

Valid

SRD

PHEL

tEHRL

tVPEH

tQVVL

DIN

High Z

DIN

tSHEH tQVSL

tEHAX

NOTES :

1. VCC power-up and standby.

2. Write erase or write setup.

3. Write erase confirm or valid address and data.

4. Automated erase or program delay.

5. Read status register data.

6. Write Read Array command.

7. B E High.

X# is defined as the latter of BE0# and BE1L#, BE1H# going Low or the first of BE0# and BE1L#, BE1H# going

LH28F320S3TD-L10

Fig. 18 AC Waveform for BE#-Controlled Write Operations

- 46 -

Page 47

RP# (P)

(A) Reset During Read Array Mode

(B) Reset During Block Erase, Bank Erase, (Multi) Word/Byte Write

High Z

VIL

VOL

STS (R)

RP# (P)

VIL

VIH

RP# (P)

VCC

2.7 V/3.3 V

or Block Lock-Bit Configuration

CC Power Up Timing

tPLPH

tPLRH

tPLPH

t23VPH

6.2.7 RESET OPERATIONS

LH28F320S3TD-L10

Fig. 19 AC Waveform for Reset Operation

SYMBOL

RP# Pulse Low Time (If RP# is tied to VCC,

PLPH

this specification is not applicable) RP# Low to Reset during Block Erase,

PLRH Bank Erase, (Multi) Word/Byte Write 1, 2 21.5 21.1 µs

PARAMETER NOTE

Reset AC Specifications

VCC = 2.7 to 3.6 V VCC = 3.3±0.3 V

MIN. MAX. MIN. MAX.

100 100 ns

or Block Lock-Bit Configuration

t23VPH

NOTES :

1. If RP# is asserted while a block erase, bank erase,

VCC 2.7 V to RP# High

CC 3.0 V to RP# High

(multi) word/byte write or block lock-bit configuration operation is not executing, the reset will complete within 100 ns.

2. A reset time, t going High Z or RP# going high until outputs are valid.

PHQV, is required from the latter of STS

3 100 100 ns

3. When the device power-up, holding RP#-low minimum 100 ns is required after V

CC has been in predefined

range and also has been in stable there.

- 47 -

UNIT

Page 48

LH28F320S3TD-L10

6.2.8 BLOCK ERASE, BANK ERASE, (MULTI) WORD/BYTE WRITE AND BLOCK LOCK-BIT CONFIGURATION PERFORMANCE

•VCC = 2.7 to 3.6 V, TA = 0 to +70˚C

SYMBOL

WHQV1

EHQV1

WHQV1

EHQV1

tWHQV2 tEHQV2

tWHQV3 Set Block Lock-Bit tEHQV3 Time tWHQV4 Clear Block Lock-Bits tEHQV4 Time

WHRH1 Write Suspend Latency

t tEHRH1 Time to Read

WHRH2

NOTES :

1. Typical values measured at TA = +25˚C and nominal

voltages. Assumes corresponding block lock-bits are not set. Subject to change based on device characterization.

PARAMETER NOTE

MIN.

Word/Byte Write Time (using W/B write, 2 22.17 22.17 13.2 µs in word mode) Word/Byte Write Time (using W/B write, 2 19.89 19.89 13.2 µs in byte mode) Word/Byte Write Time (using multi word/byte 2 5.76 5.76 2.76 µs write) Block Write Time (using W/B write, 2 0.91 0.91 0.44 s in word mode) Block Write Time (using W/B write, 2 1.63 1.63 0.87 s in byte mode) Block Write Time (using multi word/byte 2 0.37 0.37 0.18 s write)

Block Erase Time 2 0.56 0.56 0.42 s Bank Erase Time 17.9 17.9 13.3 s

2 22.17 22.17 13.2 µs

2 0.56 0.56 0.42 s

Erase Suspend Latency

(NOTE 3)

VPP = 2.7 to 3.6 V VPP = 3.3±0.3 V VPP = 5.0±0.5 V

TYP.

(NOTE 1)

MAX. MIN.

TYP.

(NOTE 1)

MAX. MIN.

TYP.

(NOTE 1)

MAX.

7.24 10.2 7.24 10.2 6.73 9.48 µs

15.5 21.5 15.5 21.5 12.54 17.54 µs

2. Excludes system-level overhead.

3. Sampled, not 100% tested.

UNIT

- 48 -

Page 49

LH28F320S3TD-L10

6.2.8 BLOCK ERASE, BANK ERASE, (MULTI) WORD/BYTE WRITE AND BLOCK LOCK-BIT CONFIGURATION PERFORMANCE (contd.)

•VCC = 3.3±0.3 V, TA = 0 to +70˚C

SYMBOL

WHQV1 Word/Byte Write Time

tEHQV1 (using W/B write, in word mode)

WHQV1 Word/Byte Write Time

t tEHQV1 (using W/B write, in byte mode)

Word/Byte Write Time (using multi word/byte write) Block Write Time (using W/B write, in word mode) Block Write Time (using W/B write, in byte mode) Block Write Time (using multi word/byte write)

WHQV2

t tEHQV2

Block Erase Time 2 0.55 0.41 s Bank Erase Time 17.6 13.1 s

WHQV3

t tEHQV3 tWHQV4 tEHQV4 tWHRH1 tEHRH1 tWHRH2

EHRH2

Set Block Lock-Bit Time 2 21.75 12.95 µs

Clear Block Lock-Bits Time 2 0.55 0.41 s

Write Suspend Latency Time to Read 7.1 10 6.6 9.3 µs

Erase Suspend Latency Time to Read 15.2 21.1 12.3 17.2 µs

NOTES :

1. Typical values measured at TA = +25˚C and nominal

voltages. Assumes corresponding block lock-bits are not set. Subject to change based on device characterization.

PARAMETER NOTE

(NOTE 3)

VPP = 3.3±0.3 V VPP = 5.0±0.5 V

MIN.

TYP.

(NOTE 1)

MAX. MIN.

TYP.

(NOTE 1)

MAX.

UNIT

2 21.75 12.95 µs

2 19.51 12.95 µs

2 5.66 2.7 µs

2 0.89 0.43 s

2 1.6 0.85 s

2 0.36 0.18 s

2. Excludes system-level overhead.

3. Sampled, not 100% tested.

- 49 -

Page 50

7 ORDERING INFORMATION

LH28F320S3TDL-10

Device Density 320 = 32 M-bit

Access Speed (ns) 10 : 100 ns (3.3±0.3 V), 120 ns (2.7 to 3.6 V)

Package T = 56-pin TSOP (I) (TSOP056-P-1420) Normal bend

Architecture S = Symmetrical Block

Power Supply Type 3 = Smart 3 Technology

Operating Temparature = 0 to +70°C

Product line designator for all SHARP Flash products

Dual Work technology

VALID OPERATIONAL COMBINATIONS

= 2.7 to 3.6 V VCC= 3.3±0.3 V

OPTION ORDER CODE

1 LH28F320S3TD-L10 120 ns 100 ns

50 pF load, 50 pF load,

1.35 V I/O Levels 1.5 V I/O Levels

LH28F320S3TD-L10

- 50 -

Page 51

±0.2

±0.05

±0.1

±0.2

TYP.

28 29

14.0

20.0

±0.3

19.0

±0.3

0.125

0.5 56

0.2

18.4

±0.08

1.2

MAX.

0.115

0.10

0.08 M

0.435

0.995

±0.1

Package base plane

56 TSOP (TSOP056-P-1420)

PACKAGING

Datasheet LH28F320S3TD-L10 Datasheet (Sharp)

Specifications and Main Features

Frequently Asked Questions

User Manual