Datasheet LH28F016SCR-L12, LH28F016SCN-L95, LH28F016SCN-L12, LH28F016SCT-L12, LH28F016SCB-L12 Datasheet (Sharp)

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In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

DESCRIPTION

The LH28F016SC-L/SCH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. Their symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards. Their enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F016SC-L/SCH-L offer three levels of protection : absolute protection with Vpp at GND, selective hardware block locking, or flexible software block locking. These alternatives give designers ultimate control of their code security needs.

FEATURES

• SmartVoltage technology – 2.7 V (Read-only), 3.3 V or 5 V V

– 3.3 V, 5 V or 12 V VPP

• High performance read access time LH28F016SC-L95/SCH-L95 – 95 ns (5.0±0.25 V)/100 ns (5.0±0.5 V)/

120 ns (3.3±0.3 V)/150 ns (2.7 to 3.6 V) LH28F016SC-L12/SCH-L12 – 120 ns (5.0±0.5 V)/150 ns (3.3±0.3 V)/

170 ns (2.7 to 3.6 V)

• Enhanced automated suspend options – Byte write suspend to read – Block erase suspend to byte write – Block erase suspend to read

• Enhanced data protection features – Absolute protection with V

PP = GND

– Flexible block locking – Block erase/byte write lockout during power

transitions

• SRAM-compatible write interface

• High-density symmetrically-blocked architecture – Thirty-two 64 k-byte erasable blocks

• Enhanced cycling capability – 100 000 block erase cycles – 3.2 million block erase cycles/chip

• Low power management – Deep power-down mode – Automatic power saving mode decreases I

in static mode

• Automated byte write and block erase – Command user interface – Status register

• ETOX

∗

V nonvolatile flash technology

• Packages – 40-pin TSOP Type I (TSOP040-P-1020)

Normal bend/Reverse bend

– 44-pin SOP (SOP044-P-0600)

[LH28F016SC-L]

– 48-ball CSP (FBGA048-P-0810)

∗

ETOX is a trademark of Intel Corporation.

LH28F016SC-L/SCH-L

16 M-bit (2 MB x 8) SmartVoltage

Flash Memories

LH28F016SC-L/SCH-L

COMPARISON TABLE

VERSIONS

OPERATING

DC CHARACTERISTICS

PACKAGE

TEMPERATURE

VCCdeep power-down current (MAX.)

LH28F016SC-L 0 to +70˚C 10 µA

40-pin TSOP (I), 44-pin SOP, 48-ball CSP

LH28F016SCH-L –40 to +85˚C 20

µA 40-pin TSOP (I), 48-ball CSP

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LH28F016SC-L/SCH-L

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PIN CONNECTIONS

44-PIN SOP [LH28F016SC-L]

(SOP044-P-0600)

VPP

RP#

A10

A9 A8 A7 A6 A5

A4 NC NC

DQ0 DQ1 DQ2

DQ3 GND GND

1 2 3 4 5 6 7 8

9 10 11 12 13 14 15 16 17 18 19 20 21 22

44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23

VCC CE# A

A13 A14 A15 A16 A17 A18 A19 NC NC A

NC WE# OE# RY/BY# DQ

DQ6 DQ5 DQ4 VCC

40-PIN TSOP (Type I)

(TSOP040-P-1020)

A19 A18 A17 A16 A15 A14 A13 A12

CE#

VPP

RP#

A10

A9 A8 A7 A6 A5 A4

1 2 3 4 5 6 7 8

9 10 11 12 13 14 15 16 17 18 19 20

40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21

A20 NC WE# OE# RY/BY# DQ

DQ6 DQ5 DQ4 VCC GND GND DQ

DQ2 DQ1 DQ0 A0 A1 A2 A3

6 2

4 3

3 4

1 5

DQ1

DQ0

A11

VPP VCC

A10

DQ2

GND

DQ3

GND

VCC

A12

CE#

A13

DQ6

DQ4

DQ5

A15

A14

A16

RY/BY#

DQ7

A19

A20

OE#

WE#

RP#

(FBGA048-P-0810)

48-BALL CSP

TOP VIEW

NOTE :

Reverse bend available on request.

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LH28F016SC-L/SCH-L

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BLOCK DIAGRAM

Y GATING

Y DECODER

INPUT

BUFFER

OUTPUT BUFFER

DQ0-DQ7

VCC

CE# WE# OE# RP#

ADDRESS

LATCH

DATA

COMPARATOR

PROGRAM/ERASE VOLTAGE SWITCH

STATUS

COMMAND

USER

INTERFACE

WRITE STATE

MACHINE

DATA

OUTPUT

MULTIPLEXER

IDENTIFIER

ADDRESS COUNTER

A0-A20

X DECODER

64 k-BYTE

BLOCKS

RY/BY#

VCC GND

INPUT

BUFFER

I/O

LOGIC

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LH28F016SC-L/SCH-L

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PIN DESCRIPTION

SYMBOL TYPE NAME AND FUNCTION

0-A20 INPUT

ADDRESS INPUTS : Inputs for addresses during read and write operations. Addresses are internally latched during a write cycle.

INPUT/

DATA INPUT/OUTPUTS : Inputs data and commands during CUI write cycles; outputs data during memory array, status register, and identifier code read cycles. Data pins float to high-impedance when the chip is deselected or outputs are disabled. Data is internally latched during a write cycle.

CE# INPUT

CHIP ENABLE : Activates the device's control logic, input buffers, decoders, and sense amplifiers. CE#-high deselects the device and reduces power consumption to standby levels. RESET/DEEP POWER-DOWN : Puts the device in deep power-down mode and resets internal automation. RP#-high enables normal operation. When driven low, RP# inhibits write operations which provide data protection during power transitions. Exit from deep power-down sets the device to read array mode. RP# at V

HH enables setting of the

master lock-bit and enables configuration of block lock-bits when the master lock-bit is set. RP# = V

HH overrides block lock-bits thereby enabling block erase and byte write

operations to locked memory blocks. Block erase, byte write, or lock-bit configuration with VIH < RP# < VHH produce spurious results and should not be attempted.

OE# INPUT OUTPUT ENABLE : Gates the device's outputs during a read cycle. WE# INPUT

WRITE ENABLE : Controls writes to the CUI and array blocks. Addresses and data are latched on the rising edge of the WE# pulse. READY/BUSY : Indicates the status of the internal WSM. When low, the WSM is performing an internal operation (block erase, byte write, or lock-bit configuration). RY/BY#-high indicates that the WSM is ready for new commands, block erase is suspended, and byte write is inactive, byte write is suspended, or the device is in deep power-down mode. RY/BY# is always active and does not float when the chip is deselected or data outputs are disabled. BLOCK ERASE, BYTE WRITE, LOCK-BIT CONFIGURATION POWER SUPPLY : For erasing array blocks, writing bytes, or configuring lock-bits. With V

PP ≤ VPPLK, memory

contents cannot be altered. Block erase, byte write, and lock-bit configuration with an invalid V

PP (see Section 6.2.3 "DC CHARACTERISTICS") produce spurious results

and should not be attempted. DEVICE POWER SUPPLY : Internal detection configures the device for 2.7 V , 3.3 V or 5 V operation. To switch from one voltage to another, ramp V

CC down to GND and then

ramp VCC to the new voltage. Do not float any power pins. With VCC ≤ VLKO, all write attempts to the flash memory are inhibited. Device operations at invalid V

CC voltage

(see Section 6.2.3 "DC CHARACTERISTICS") produce spurious results and should not be attempted. Block erase, byte write and lock-bit configuration operations with V

3.0 V are not supported.

GND SUPPLY GROUND : Do not float any ground pins.

NC NO CONNECT : Lead is not internal connected; recommend to be floated.

OUTPUT

0-DQ7

RP#

INPUT

RY/BY# OUTPUT

PP SUPPLY

CC SUPPLY

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LH28F016SC-L/SCH-L

1 INTRODUCTION

This datasheet contains LH28F016SC-L/SCH-L specifications. Section 1 provides a flash memory overview. Sections 2, 3, 4, and 5 describe the memory organization and functionality. Section 6 covers electrical specifications. LH28F016SC-L/ SCH-L flash memories documentation also includes ordering information which is referenced in Section 7.

1.1 New Features

The LH28F016SC-L/SCH-L SmartVoltage flash memories maintain backwards-compatibility with the LH28F008SA. Key enhancements over the LH28F008SA include :

• SmartVoltage Technology

• Enhanced Suspend Capabilities

• In-System Block Locking

Both devices share a compatible pinout, status register, and software command set. These similarities enable a clean upgrade from the LH28F008SA to LH28F016SC-L/SCH-L. When upgrading, it is important to note the following differences :

• Because of new feature support, the two devices have different device codes. This allows for software optimization.

•V

PPLK has been lowered from 6.5 V to 1.5 V to

support 3.3 V and 5 V block erase, byte write, and lock-bit configuration operations. Designs that switch V

PP off during read operations

should make sure that the V

PP voltage

transitions to GND.

• To take advantage of SmartVoltage technology, allow V

PP connection to 3.3 V or 5 V.

1.2 Product Overview

The LH28F016SC-L/SCH-L are high-performance 16 M-bit SmartVoltage flash memories organized as 2 M-byte of 8 bits. The 2 M-byte of data is

arranged in thirty-two 64 k-byte blocks which are individually erasable, lockable, and unlockable insystem. The memory map is shown in Fig. 1.

SmartVoltage technology provides a choice of V

and VPP combinations, as shown in Table 1, to meet system performance and power expectations.

2.7 V V

CC consumes approximately one-fifth the

power of 5 V V

CC and 3.3 V VCC consumes

approximately one-fourth the power of 5 V V

CC. But,

5 V V

CC provides the highest read performance.

PP at 3.3 V and 5 V eliminates the need for a

separate 12 V converter, while V

PP = 12 V

maximizes block erase and byte write performance. In addition to flexible erase and program voltages, the dedicated V

PP pin gives complete data

protection when V

PP ≤ VPPLK.

Table 1 VCC and VPP Voltage Combinations

Offered by SmartVoltage Technology

NOTE :

1. Block erase, byte write and lock-bit configuration operations with V

CC < 3.0 V are not supported.

Internal VCC and VPP detection circuitry automatically configures the device for optimized read and write operations.

A Command User Interface (CUI) serves as the interface between the system processor and internal operation of the device. A valid command sequence written to the CUI initiates device automation. An internal Write State Machine (WSM) automatically executes the algorithms and timings necessary for block erase, byte write, and lock-bit configuration operations.

A block erase operation erases one of the device’s 64 k-byte blocks typically within 1 second (5 V V

CC,

VCC VOLTAGE VPP VOLTAGE

2.7 V

(NOTE 1)

—

3.3 V 3.3 V, 5 V, 12 V 5 V 5 V, 12 V

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LH28F016SC-L/SCH-L

12 V VPP) independent of other blocks. Each block can be independently erased 100 000 times (3.2 million block erases per device). Block erase suspend mode allows system software to suspend block erase to read data from, or write data to any other block.

Writing memory data is performed in byte increments typically within 6 µs (5 V V

CC, 12 V

PP). Byte write suspend mode enables the system

to read data from, or write data to any other flash memory array location.

Individual block locking uses a combination of bits, thirty-two block lock-bits and a master lock-bit, to lock and unlock blocks. Block lock-bits gate block erase and byte write operations, while the master lock-bit gates block lock-bit modification. Lock-bit configuration operations (Set Block Lock-Bit, Set Master Lock-Bit, and Clear Block Lock-Bits commands) set and cleared lock-bits.

The status register indicates when the WSM’s block erase, byte write, or lock-bit configuration operation is finished.

The RY/BY# output gives an additional indicator of WSM activity by providing both a hardware signal of status (versus software polling) and status masking (interrupt masking for background block erase, for example). Status polling using RY/BY# minimizes both CPU overhead and system power consumption. When low, RY/BY# indicates that the WSM is performing a block erase, byte write, or lock-bit configuration. RY/BY#-high indicates that the WSM is ready for a new command, block erase is suspended (and byte write is inactive), byte write is suspended, or the device is in deep power-down mode.

The access time is 95 ns (t

AVQV) at the VCC supply

voltage range of 4.75 to 5.25 V over the temperature range, 0 to +70°C (LH28F016SC-L)/ –40 to +85°C (LH28F016SCH-L). At 4.5 to 5.5 V V

CC, the access time is 100 ns or 120 ns. At lower

CC voltage, the access time is 120 ns or 150 ns

(3.0 to 3.6 V) and 150 ns or 170 ns (2.7 to 3.6 V).

The Automatic Power Saving (APS) feature substantially reduces active current when the device is in static mode (addresses not switching). In APS mode, the typical I

CCR current is 1 mA at

5 V V

CC and 3 mA at 2.7 V and 3.3 V VCC.

When CE# and RP# pins are at V

CC, the ICC

CMOS standby mode is enabled. When the RP# pin is at GND, deep power-down mode is enabled which minimizes power consumption and provides write protection during reset. A reset time (t

PHQV) is

required from RP# switching high until outputs are valid. Likewise, the device has a wake time (t

PHEL)

from RP#-high until writes to the CUI are recognized. With RP# at GND, the WSM is reset and the status register is cleared.

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LH28F016SC-L/SCH-L

Fig. 1 Memory Map

2 PRINCIPLES OF OPERATION

The LH28F016SC-L/SCH-L SmartVoltage flash memories include an on-chip WSM to manage block erase, byte write, and lock-bit configuration functions. It allows for : 100% TTL-level control inputs, fixed power supplies during block erasure, byte write, and lock-bit configuration, and minimal processor overhead with RAM-like interface timings.

After initial device power-up or return from deep power-down mode (see Table 2 "Bus Operations"), the device defaults to read array mode. Manipulation of external memory control pins allow array read, standby, and output disable operations.

Status register and identifier codes can be accessed through the CUI independent of the V

voltage. High voltage on VPP enables successful block erasure, byte writing, and lock-bit configuration. All functions associated with altering memory contents—block erase, byte write, lock-bit configuration, status, and identifier codes—are accessed via the CUI and verified through the status register.

Commands are written using standard microprocessor write timings. The CUI contents serve as input to the WSM, which controls the block erase, byte write, and lock-bit configuration. The internal algorithms are regulated by the WSM, including pulse repetition, internal verification, and margining of data. Addresses and data are internally latched during write cycles. Writing the appropriate command outputs array data, accesses the identifier codes, or outputs status register data.

Interface software that initiates and polls progress of block erase, byte write, and lock-bit configuration can be stored in any block. This code is copied to and executed from system RAM during flash memory updates. After successful completion, reads are again possible via the Read Array command. Block erase suspend allows system

64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block 64 k-Byte Block

1FFFFF 1F0000

1EFFFF 1E0000

1DFFFF 1D0000

1CFFFF 1C0000

1BFFFF 1B0000

1AFFFF 1A0000

19FFFF 190000

18FFFF 180000

17FFFF 170000

16FFFF 160000

15FFFF 150000

14FFFF 140000

13FFFF 130000

12FFFF 120000

11FFFF 110000

10FFFF 100000

0FFFFF 0F0000

0EFFFF 0E0000

0DFFFF 0D0000

0CFFFF 0C0000

0BFFFF 0B0000

0AFFFF 0A0000

09FFFF 090000

08FFFF 080000

07FFFF 070000

06FFFF 060000

05FFFF 050000

04FFFF 040000

03FFFF 030000

02FFFF 020000

01FFFF 010000

00FFFF 000000

31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10

9 8 7 6 5 4 3 2 1 0

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LH28F016SC-L/SCH-L

software to suspend a block erase to read/write data from/to blocks other than that which is suspended. Byte write suspend allows system software to suspend a byte write to read data from any other flash memory array location.

2.1 Data Protection

Depending on the application, the system designer may choose to make the V

PP power supply

switchable (available only when memory block erases, byte writes, or lock-bit configurations are required) or hardwired to V

PPH1/2/3. The device

accommodates either design practice and encourages optimization of the processor-memory interface.

When V

PP ≤ VPPLK, memory contents cannot be

altered. The CUI, with two-step block erase, byte write, or lock-bit configuration command sequences, provides protection from unwanted operations even when high voltage is applied to V

PP. All write

functions are disabled when V

CC is below the write

lockout voltage V

LKO or when RP# is at VIL. The

device’s block locking capability provides additional protection from inadvertent code or data alteration by gating erase and byte write operations.

3 BUS OPERATION

The local CPU reads and writes flash memory insystem. All bus cycles to or from the flash memory conform to standard microprocessor bus cycles.

3.1 Read

Information can be read from any block, identifier codes, or status register independent of the V

voltage. RP# can be at either VIH or VHH.

The first task is to write the appropriate read mode command (Read Array, Read Identifier Codes, or Read Status Register) to the CUI. Upon initial device power-up or after exit from deep powerdown mode, the device automatically resets to read array mode. Four control pins dictate the data flow

in and out of the component : CE#, OE#, WE#, and RP#. CE# and OE# must be driven active to obtain data at the outputs. CE# is the device selection control, and when active enables the selected memory device. OE# is the data output (DQ

0-DQ7) control and when active drives the

selected memory data onto the I/O bus. WE# must be at V

IH and RP# must be at VIH or VHH. Fig. 13

illustrates a read cycle.

3.2 Output Disable

With OE# at a logic-high level (VIH), the device outputs are disabled. Output pins DQ

0-DQ7 are

placed in a high-impedance state.

3.3 Standby

CE# at a logic-high level (VIH) places the device in standby mode which substantially reduces device power consumption. DQ

0-DQ7 outputs are placed

in a high-impedance state independent of OE#. If deselected during block erase, byte write, or lock-bit configuration, the device continues functioning, and consuming active power until the operation completes.

3.4 Deep Power-Down

RP# at VIL initiates the deep power-down mode.

In read modes, RP#-low deselects the memory, places output drivers in a high-impedance state and turns off all internal circuits. RP# must be held low for a minimum of 100 ns. Time t

PHQV is required

after return from power-down until initial memory access outputs are valid. After this wake-up interval, normal operation is restored. The CUI is reset to read array mode and status register is set to 80H.

During block erase, byte write, or lock-bit configuration modes, RP#-low will abort the operation. RY/BY# remains low until the reset operation is complete. Memory contents being altered are no longer valid; the data may be

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LH28F016SC-L/SCH-L

partially erased or written. Time tPHWL is required after RP# goes to logic-high (V

IH) before another

command can be written.

As with any automated device, it is important to assert RP# during system reset. When the system comes out of reset, it expects to read from the flash memory. Automated flash memories provide status information when accessed during block erase, byte write, or lock-bit configuration modes. If a CPU reset occurs with no flash memory reset, proper CPU initialization may not occur because the flash memory may be providing status information instead of array data. SHARP’s flash memories allow proper CPU initialization following a system reset through the use of the RP# input. In this application, RP# is controlled by the same RESET# signal that resets the system CPU.

3.5 Read Identifier Codes Operation

The read identifier codes operation outputs the manufacture code, device code, block lock configuration codes for each block, and the master lock configuration code (see Fig. 2). Using the manufacture and device codes, the system CPU can automatically match the device with its proper algorithms. The block lock and master lock configuration codes identify locked and unlocked blocks and master lock-bit setting.

Fig. 2 Device Identifier Code Memory Map

1FFFFF

1F0004 1F0003 1F0002 1F0001 1F0000

01FFFF

010004 010003 010002 010001 010000 00FFFF

000004 000003 000002 000001 000000

Reserved for

Future Implementation

Block 31 Lock Configuration Code

Block 31

Block 1

Block 0

(Blocks 2 through 30)

Reserved for

Future Implementation

Reserved for

Future Implementation

Block 1 Lock Configuration Code

Reserved for

Future Implementation

Reserved for

Future Implementation

Master Lock Configuration Code

Block 0 Lock Configuration Code

Device Code

Manufacture Code

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LH28F016SC-L/SCH-L

3.6 Write

Writing commands to the CUI enable reading of device data and identifier codes. They also control inspection and clearing of the status register. When V

PP = VPPH1/2/3, the CUI additionally controls

block erasure, byte write, and lock-bit configuration.

The Block Erase command requires appropriate command data and an address within the block to be erased. The Byte Write command requires the command and address of the location to be written. Set Master and Block Lock-Bit commands require the command and address within the device (Master Lock) or block within the device (Block Lock) to be locked. The Clear Block Lock-Bits command requires the command and address within the device.

The CUI does not occupy an addressable memory

location. It is written when WE# and CE# are active. The address and data needed to execute a command are latched on the rising edge of WE# or CE# (whichever goes high first). Standard microprocessor write timings are used. Fig. 14 and Fig. 15 illustrate WE# and CE#-controlled write operations.

4 COMMAND DEFINITIONS

When the VPP voltage ≤ VPPLK, read operations from the status register, identifier codes, or blocks are enabled. Placing V

PPH1/2/3 on VPP enables

successful block erase, byte write and lock-bit configuration operations.

Device operations are selected by writing specific commands into the CUI. Table 3 defines these commands.

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Table 2 Bus Operations

MODE NOTE RP# CE# OE# WE#

ADDRESS

0-7

RY/BY#

VIHor V

XXD

OUT

Output Disable 3

VIHor V

X X High Z X

Standby 3

VIHor V

XXXXHigh Z X

Deep Power-Down 4 VIL XXXXXHigh Z V

Read Identifier Codes 8

VIHor V

See Fig. 2

NOTE 5)

Write 3, 6, 7, 8

VIHor V

XXDINX

NOTES :

1. Refer to Section 6.2.3 "DC CHARACTERISTICS". When V

PP ≤ VPPLK, memory contents can be read, but

not altered.

2. X can be V

IL or VIH for control pins and addresses, and

PPLK or VPPH1/2/3 for VPP. See Section 6.2.3 "DC

CHARACTERISTICS" for V

PPLK and VPPH1/2/3 voltages.

3. RY/BY# is V

OL when the WSM is executing internal

block erase, byte write, or lock-bit configuration algorithms. It is V

OH during when the WSM is not busy,

in block erase suspend mode (with byte write inactive), byte write suspend mode, or deep power-down mode.

4. RP# at GND±0.2 V ensures the lowest deep powerdown current.

5. See Section 4.2 for read identifier code data.

6. Command writes involving block erase, byte write, or lock-bit configuration are reliably executed when V

PP =

PPH1/2/3 and VCC = VCC2/3/4. Block erase, byte write, or

lock-bit configuration with V

CC < 3.0 V or VIH < RP# <

HH produce spurious results and should not be

attempted.

7. Refer to Table 3 for valid D

IN during a write operation.

8. Don't use the timing both OE# and WE# are V

IL.

Page 11

COMMAND

BUS CYCLES

NOTE

FIRST BUS CYCLE SECOND BUS CYCLE

REQ’D.

Oper

(NOTE 1)

Addr

(NOTE 2)

Data

(NOTE 3)

Oper

(NOTE 1)

Addr

(NOTE 2)

Data

(NOTE 3)

Read Array/Reset 1 Write X FFH Read Identifier Codes ≥ 2 4 Write X 90H Read IA ID Read Status Register 2 Write X 70H Read X SRD Clear Status Register 1 Write X 50H Block Erase 2 5 Write BA 20H Write BA D0H Byte Write 2 5, 6 Write WA

40H or 10H

Write WA WD

Block Erase and

1 5 Write X B0H

Byte Write Suspend Block Erase and

1 5 Write X D0H

Byte Write Resume Set Block Lock-Bit 2 7 Write BA 60H Write BA 01H Set Master Lock-Bit 2 7 Write X 60H Write X F1H Clear Block Lock-Bits 2 8 Write X 60H Write X D0H

Table 3 Command Definitions

(NOTE 9)

NOTES :

1. Bus operations are defined in Table 2.

2. X = Any valid address within the device. IA = Identifier code address : see Fig. 2. BA = Address within the block being erased or locked. WA = Address of memory location to be written.

3. SRD = Data read from status register. See Table 6 for a

description of the status register bits.

WD = Data to be written at location WA. Data is latched

on the rising edge of WE# or CE# (whichever goes high first).

ID = Data read from identifier codes.

4. Following the Read Identifier Codes command, read operations access manufacture, device, block lock, and master lock codes. See Section 4.2 for read identifier code data.

5. If the block is locked, RP# must be at V

HH to enable

block erase or byte write operations. Attempts to issue a block erase or byte write to a locked block while RP# is V

IH.

6. Either 40H or 10H is recognized by the WSM as the byte write setup.

7. If the master lock-bit is set, RP# must be at V

HH to set a

block lock-bit. RP# must be at V

HH to set the master

lock-bit. If the master lock-bit is not set, a block lock-bit can be set while RP# is V

IH.

8. If the master lock-bit is set, RP# must be at V

HH to clear

block lock-bits. The clear block lock-bits operation simultaneously clears all block lock-bits. If the master lock-bit is not set, the Clear Block Lock-Bits command can be done while RP# is V

IH.

9. Commands other than those shown above are reserved by SHARP for future device implementations and should not be used.

LH28F016SC-L/SCH-L

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LH28F016SC-L/SCH-L

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4.1 Read Array Command

Upon initial device power-up and after exit from deep power-down mode, the device defaults to read array mode. This operation is also initiated by writing the Read Array command. The device remains enabled for reads until another command is written. Once the internal WSM has started a block erase, byte write or lock-bit configuration, the device will not recognize the Read Array command until the WSM completes its operation unless the WSM is suspended via an Erase Suspend or Byte Write Suspend command. The Read Array command functions independently of the V

voltage and RP# can be VIH or VHH.

4.2 Read Identifier Codes Command

The identifier code operation is initiated by writing the Read Identifier Codes command. Following the command write, read cycles from addresses shown in Fig. 2 retrieve the manufacture, device, block lock configuration and master lock configuration codes (see Table 4 for identifier code values). To terminate the operation, write another valid command. Like the Read Array command, the Read Identifier Codes command functions independently of the V

PP voltage and RP# can be

IH or VHH. Following the Read Identifier Codes

command, the following information can be read :

Table 4 Identifier Codes

4.3 Read Status Register Command

The status register may be read to determine when a block erase, byte write, or lock-bit configuration is complete and whether the operation completed successfully. It may be read at any time by writing the Read Status Register command. After writing this command, all subsequent read operations output data from the status register until another valid command is written. The status register contents are latched on the falling edge of OE# or CE#, whichever occurs. OE# or CE# must toggle to V

IH before further reads to update the status

PP voltage. RP#

can be V

IH or VHH.

4.4 Clear Status Register Command

Status register bits SR.5, SR.4, SR.3, and SR.1 are set to "1"s by the WSM and can only be reset by the Clear Status Register command. These bits indicate various failure conditions (see Table 6). By allowing system software to reset these bits, several operations (such as cumulatively erasing or locking multiple blocks or writing several bytes in sequence) may be performed. The status register may be polled to determine if an error occurred during the sequence.

To clear the status register, the Clear Status Register command (50H) is written. It functions independently of the applied V

PP voltage. RP# can

be V

IH or VHH. This command is not functional

during block erase or byte write suspend modes.

4.5 Block Erase Command

Erase is executed one block at a time and initiated by a two-cycle command. A block erase setup is first written, followed by a block erase confirm. This command sequence requires appropriate sequencing and an address within the block to be erased (erase changes all block data to FFH). Block preconditioning, erase, and verify are handled internally by the WSM (invisible to the system). After the two-cycle block erase sequence is written,

CODE ADDRESS DATA

Manufacture Code 00000H 89 Device Code 00001H AA Block Lock Configuration

X0002H

(NOTE 1)

•Block is Unlocked DQ0 = 0

•Block is Locked DQ0 = 1

•Reserved for Future Use DQ1-7 Master Lock Configuration 00003H

•Device is Unlocked DQ0 = 0

•Device is Locked DQ0 = 1

•Reserved for Future Use DQ

1-7

NOTE :

1. X selects the specific block lock configuration code to be read. See Fig. 2 for the device identifier code memory map.

Page 13

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LH28F016SC-L/SCH-L

the device automatically outputs status register data when read (see Fig. 3). The CPU can detect block erase completion by analyzing the output data of the RY/BY# pin or status register bit SR.7.

When the block erase is complete, status register bit SR.5 should be checked. If a block erase error is detected, the status register should be cleared before system software attempts corrective actions. The CUI remains in read status register mode until a new command is issued.

This two-step command sequence of set-up followed by execution ensures that block contents are not accidentally erased. An invalid Block Erase command sequence will result in both status register bits SR.4 and SR.5 being set to "1". Also, reliable block erasure can only occur when V

CC =

CC2/3/4 and VPP = VPPH1/2/3. In the absence of this

high voltage, block contents are protected against erasure. If block erase is attempted while V

PP ≤

PPLK, SR.3 and SR.5 will be set to "1". Successful

block erase requires that the corresponding block lock-bit be cleared or, if set, that RP# = V

HH. If

block erase is attempted when the corresponding block lock-bit is set and RP# = V

IH, SR.1 and SR.5

will be set to “1”. Block erase operations with V

IH <

RP# < V

HH produce spurious results and should

not be attempted.

4.6 Byte Write Command

Byte write is executed by a two-cycle command sequence. Byte write setup (standard 40H or alternate 10H) is written, followed by a second write that specifies the address and data (latched on the rising edge of WE#). The WSM then takes over, controlling the byte write and write verify algorithms internally. After the byte write sequence is written, the device automatically outputs status register data when read (see Fig. 4). The CPU can detect the completion of the byte write event by analyzing the RY/BY# pin or status register bit SR.7.

When byte write is complete, status register bit SR.4 should be checked. If byte write error is detected, the status register should be cleared. The internal WSM verify only detects errors for “1”s that do not successfully write to “0”s. The CUI remains in read status register mode until it receives another command.

Reliable byte writes can only occur when V

CC =

CC2/3/4 and VPP = VPPH1/2/3. In the absence of this

high voltage, memory contents are protected against byte writes. If byte write is attempted while V

PP ≤ VPPLK, status register bits SR.3 and SR.4 will

be set to "1". Successful byte write requires that the corresponding block lock-bit be cleared or, if set, that RP# = V

HH. If byte write is attempted when the

corresponding block lock-bit is set and RP# = V

IH,

SR.1 and SR.4 will be set to "1". Byte write operations with V

IH < RP# < VHH produce spurious

results and should not be attempted.

4.7 Block Erase Suspend Command

The Block Erase Suspend command allows block erase interruption to read or byte write data in another block of memory. Once the block erase process starts, writing the Block Erase Suspend command requests that the WSM suspend the block erase sequence at a predetermined point in the algorithm. The device outputs status register data when read after the Block Erase Suspend command is written. Polling status register bits SR.7 and SR.6 can determine when the block erase operation has been suspended (both will be set to "1"). RY/BY# will also transition to V

OH.

Specification t

WHRH2 defines the block erase

suspend latency.

At this point, a Read Array command can be written to read data from blocks other than that which is suspended. A Byte Write command sequence can also be issued during erase suspend to program data in other blocks. Using the Byte

Page 14

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LH28F016SC-L/SCH-L

Write Suspend command (see Section 4.8), a byte write operation can also be suspended. During a byte write operation with block erase suspended, status register bit SR.7 will return to “0” and the RY/BY# output will transition to V

OL. However,

SR.6 will remain "1" to indicate block erase suspend status.

The only other valid commands while block erase is suspended are Read Status Register and Block Erase Resume. After a Block Erase Resume command is written to the flash memory, the WSM will continue the block erase process. Status register bits SR.6 and SR.7 will automatically clear and RY/BY# will return to V

OL. After the Erase

Resume command is written, the device automatically outputs status register data when read (see Fig. 5). V

PP must remain at VPPH1/2/3 (the

same V

PP level used for block erase) while block

erase is suspended. RP# must also remain at V

or VHH (the same RP# level used for block erase). Block erase cannot resume until byte write operations initiated during block erase suspend have completed.

4.8 Byte Write Suspend Command

The Byte Write Suspend command allows byte write interruption to read data in other flash memory locations. Once the byte write process starts, writing the Byte Write Suspend command requests that the WSM suspend the byte write sequence at a predetermined point in the algorithm. The device continues to output status register data when read after the Byte Write Suspend command is written. Polling status register bits SR.7 and SR.2 can determine when the byte write operation has been suspended (both will be set to "1"). RY/BY# will also transition to V

OH. Specification tWHRH1 defines

the byte write suspend latency.

At this point, a Read Array command can be written to read data from locations other than that which is suspended. The only other valid

commands while byte write is suspended are Read Status Register and Byte Write Resume. After Byte Write Resume command is written to the flash memory, the WSM will continue the byte write process. Status register bits SR.2 and SR.7 will automatically clear and RY/BY# will return to V

OL.

After the Byte Write Resume command is written, the device automatically outputs status register data when read (see Fig. 6). V

PP must remain at

PPH1/2/3 (the same VPP level used for byte write)

while in byte write suspend mode. RP# must also remain at V

IH or VHH (the same RP# level used for

byte write).

4.9 Set Block and Master Lock-Bit Commands

A flexible block locking and unlocking scheme is enabled via a combination of block lock-bits and a master lock-bit. The block lock-bits gate program and erase operations while the master lock-bit gates block-lock bit modification. With the master lock-bit not set, individual block lock-bits can be set using the Set Block Lock-Bit command. The Set Master Lock-Bit command, in conjunction with RP# = V

HH, sets the master lock-bit. After the master

lock-bit is set, subsequent setting of block lock-bits requires both the Set Block Lock-Bit command and V

HH on the RP# pin. See Table 5 for a summary of

hardware and software write protection options.

Set block lock-bit and master lock-bit are executed by a two-cycle command sequence. The set block or master lock-bit setup along with appropriate block or device address is written followed by either the set block lock-bit confirm (and an address within the block to be locked) or the set master lock-bit confirm (and any device address). The WSM then controls the set lock-bit algorithm. After the sequence is written, the device automatically outputs status register data when read (see Fig. 7). The CPU can detect the completion of the set lockbit event by analyzing the RY/BY# pin output or status register bit SR.7.

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LH28F016SC-L/SCH-L

When the set lock-bit operation is complete, status register bit SR.4 should be checked. If an error is detected, the status register should be cleared. The CUI will remain in read status register mode until a new command is issued.

This two-step sequence of set-up followed by execution ensures that lock-bits are not accidentally set. An invalid Set Block or Master Lock-Bit command will result in status register bits SR.4 and SR.5 being set to "1". Also, reliable operations occur only when V

CC = VCC2/3/4 and VPP =

PPH1/2/3. In the absence of this high voltage, lock-

bit contents are protected against alteration.

A successful set block lock-bit operation requires that the master lock-bit be cleared or, if the master lock-bit is set, that RP# = V

HH. If it is attempted

with the master lock-bit set and RP# = V

IH, SR.1

and SR.4 will be set to "1" and the operation will fail. Set block lock-bit operations while V

IH < RP# <

HH produce spurious results and should not be

attempted. A successful set master lock-bit operation requires that RP# = V

HH. If it is attempted

with RP# = V

IH, SR.1 and SR.4 will be set to "1"

and the operation will fail. Set master lock-bit operations with V

IH < RP# < VHH produce spurious

results and should not be attempted.

4.10 Clear Block Lock-Bits Command

All set block lock-bits are cleared in parallel via the Clear Block Lock-Bits command. With the master lock-bit not set, block lock-bits can be cleared using only the Clear Block Lock-Bits command. If the master lock-bit is set, clearing block lock-bits requires both the Clear Block Lock-Bits command and V

HH on the RP# pin. See Table 5 for a

summary of hardware and software write protection options.

Clear block lock-bits operation is executed by a two-cycle command sequence. A clear block lockbits setup is first written. After the command is

written, the device automatically outputs status register data when read (see Fig. 8). The CPU can detect completion of the clear block lock-bits event by analyzing the RY/BY# pin output or status register bit SR.7.

When the operation is complete, status register bit SR.5 should be checked. If a clear block lock-bits error is detected, the status register should be cleared. The CUI will remain in read status register mode until another command is issued.

This two-step sequence of set-up followed by execution ensures that block lock-bits are not accidentally cleared. An invalid Clear Block LockBits command sequence will result in status register bits SR.4 and SR.5 being set to "1". Also, a reliable clear block lock-bits operation can only occur when V

CC = VCC2/3/4 and VPP = VPPH1/2/3. If a clear block

lock-bits operation is attempted while V

PP ≤ VPPLK,

SR.3 and SR.5 will be set to "1". In the absence of this high voltage, the block lock-bit contents are protected against alteration. A successful clear block lock-bits operation requires that the master lock-bit is not set or, if the master lock-bit is set, that RP# = V

HH. If it is attempted with the master

lock-bit set and RP# = V

IH, SR.1 and SR.5 will be

set to "1" and the operation will fail. A clear block lock-bits operation with V

IH < RP# < VHH produce

spurious results and should not be attempted.

If a clear block lock-bits operation is aborted due to V

PP or VCC transition out of valid range or RP#

active transition, block lock-bit values are left in an undetermined state. A repeat of clear block lock-bits is required to initialize block lock-bit contents to known values. Once the master lock-bit is set, it cannot be cleared.

Page 16

SR.7 = WRITE STATE MACHINE STATUS (WSMS)

1 = Ready 0 = Busy

SR.6 = ERASE SUSPEND STATUS (ESS)

1 = Block Erase Suspended 0 = Block Erase in Progress/Completed

SR.5 =

ERASE AND CLEAR LOCK-BITS STATUS (ECLBS) 1 = Error in Block Erase or Clear Lock-Bits 0 = Successful Block Erase or Clear Lock-Bits

SR.4 =

BYTE WRITE AND SET LOCK-BIT STATUS (BWSLBS) 1 = Error in Byte Write or Set Master/Block Lock-Bit 0=

Successful Byte Write or Set Master/Block Lock-Bit

SR.3 = VPP STATUS (VPPS)

1= V

PP Low Detect, Operation Abort

0= V

PP OK

SR.2 = BYTE WRITE SUSPEND STATUS (BWSS)

1 = Byte Write Suspended 0 = Byte Write in Progress/Completed

SR.1 = DEVICE PROTECT STATUS (DPS)

1 = Master Lock-Bit, Block Lock-Bit and/or RP#

Lock Detected, Operation Abort

0 = Unlock

SR.0 =

RESERVED FOR FUTURE ENHANCEMENTS (R)

LH28F016SC-L/SCH-L

- 16 -

MASTER BLOCK

OPERATION RP# EFFECT

LOCK-BIT LOCK-BIT

Block Erase

0VIH or VHH Block Erase and Byte Write Enabled

or Byte Write

IH Block is Locked. Block Erase and Byte Write Disabled

VHH Block Lock-Bit Override. Block Erase and Byte Write Enabled

Set Block

0XVIH or VHH Set Block Lock-Bit Enabled

Lock-Bit 1 X

IH Master Lock-Bit is Set. Set Block Lock-Bit Disabled

VHH Master Lock-Bit Override. Set Block Lock-Bit Enabled

Set Master

VIH Set Master Lock-Bit Disabled

Lock-Bit VHH Set Master Lock-Bit Enabled Clear Block

0XVIH or VHH Clear Block Lock-Bits Enabled

Lock-Bits 1 X

IH Master Lock-Bit is Set. Clear Block Lock-Bits Disabled

VHH Master Lock-Bit Override. Clear Block Lock-Bits Enabled

Table 5 Write Protection Alternatives

Table 6 Status Register Definition

WSMS ESS ECLBS BWSLBS VPPS BWSS DPS R

76543210

NOTES :

Check RY/BY# or SR.7 to determine block erase, byte write, or lock-bit configuration completion. SR.6-0 are invalid while SR.7 =

"0".

If both SR.5 and SR.4 are

"1"s after a block erase or lock-bit

configuration attempt, an improper command sequence was entered.

SR.3 does not provide a continuous indication of V

PP level.

The WSM interrogates and indicates the V

PP level only after

Block Erase, Byte Write, Set Block/Master Lock-Bit, or Clear Block Lock-Bits command sequences. SR.3 is not guaranteed to reports accurate feedback only when V

PP ≠ VPPH1/2/3.

SR.1 does not provide a continuous indication of master and block lock-bit values. The WSM interrogates the master lockbit, block lock-bit, and RP# only after Block Erase, Byte Write, or Lock-Bit configuration command sequences. It informs the system, depending on the attempted operation, if the block lock-bit is set, master lock-bit is set, and/or RP# is not V

HH.

Reading the block lock and master lock configuration codes after writing the Read Identifier Codes command indicates master and block lock-bit status.

SR.0 is reserved for future use and should be masked out when polling the status register.

Page 17

LH28F016SC-L/SCH-L

- 17 -

Block Erase

Complete

Start

Write 20H,

Block Address

Write D0H,

Block Address

Read

Status Register

SR.7 =

Full Status

Check if Desired

Repeat for subsequent block erasures. Full status check can be done after each block erase or after

a sequence of block erasures. Write FFH after the last block erase operation to place device

in read array mode.

BUS

OPERATION

Write

Read

Standby

COMMAND

Erase Setup

COMMENTS

Data = 20H Addr = Within Block to be Erased

Data = D0H Addr = Within Block to be Erased

Status Register Data

Check SR.7 1 = WSM Ready 0 = WSM Busy

SR.3 =

FULL STATUS CHECK PROCEDURE

Read Status Register

Data (See Above)

PP Range Error

SR.1 =

Device Protect Error

BUS

OPERATION

COMMAND

COMMENTS

Standby

Check SR.1 1 = Device Protect Detect RP# = V

IH, Block Lock-Bit is Set

Only required for systems implementing lock-bit configuration

Check SR.5 1 = Block Erase Error

SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear Status Register command in cases where multiple blocks are erased before full status is checked.

If error is detected, clear the status register before attempting retry or other error recovery.

Suspend

Block Erase

Yes

Suspend Block

Erase Loop

Erase

Confirm

Block Erase

Successful

SR.4, 5 =

Command Sequence

Error

SR.5 =

Block Erase

Error

Standby

Check SR.3 1 = V

PP Error Detect

Standby

Check SR.4, 5 Both 1 = Command Sequence Error

Fig. 3 Automated Block Erase Flowchart

Page 18

LH28F016SC-L/SCH-L

- 18 -

Byte Write

Complete

Start

Write 40H,

Address

Write Byte

Data and Address

Read

Status Register

SR.7 =

Full Status

Check if Desired

Repeat for subsequent byte writes. SR full status check can be done after each byte write or after

a sequence of byte writes. Write FFH after the last byte write operation to place device

in read array mode.

BUS

OPERATION

Write

Read

Standby

COMMAND

Setup

Byte Write

COMMENTS

Data = 40H Addr = Location to be Written

Data = Data to be Written Addr = Location to be Written

Status Register Data

Check SR.7 1 = WSM Ready 0 = WSM Busy

SR.3 =

FULL STATUS CHECK PROCEDURE

Read Status Register

Data (See Above)

PP Range Error

SR.1 =

Device Protect Error

BUS

OPERATION

COMMAND

COMMENTS

Standby

Check SR.1 1 = Device Protect Detect RP# = V

IH, Block Lock-Bit is Set

Only required for systems implementing lock-bit configuration

SR.4, SR.3 and SR.1 are only cleared by the Clear Status Register command in cases where multiple locations are written before full status is checked.

If error is detected, clear the status register before attempting retry or other error recovery.

Suspend

Byte Write

Yes

Suspend Byte

Write Loop

Byte Write

Byte Write Successful

SR.4 =

Byte Write Error

Standby

Check SR.3 1 = V

PP Error Detect

Standby

Check SR.4 1 = Data Write Error

Fig. 4 Automated Byte Write Flowchart

Page 19

LH28F016SC-L/SCH-L

- 19 -

Block Erase

Resumed

Start

Write B0H

Read

Status Register

SR.7 =

Byte Write

BUS

OPERATION

Write

Read

Standby

COMMAND

Erase

Suspend

COMMENTS

Data = B0H Addr = X

Status Register Data Addr = X

Check SR.7 1 = WSM Ready 0 = WSM Busy

Check SR.6 1 = Block Erase Suspended 0 = Block Erase Completed

Erase

Resume

SR.6 =

Done?

Write D0H

Block Erase

Completed

Write FFH

Read

Array Data

Yes

Write

Data = D0H Addr = X

Read

or Byte

Write?

Read

Read Array Data Byte Write Loop

Fig. 5 Block Erase Suspend/Resume Flowchart

Page 20

LH28F016SC-L/SCH-L

- 20 -

Byte Write Resumed

Start

Write B0H

Read

Status Register

SR.7 =

Write FFH

BUS

OPERATION

Write

Read

Standby

COMMAND

Byte Write

Suspend

COMMENTS

Data = B0H Addr = X

Status Register Data Addr = X

Check SR.7 1 = WSM Ready 0 = WSM Busy

Check SR.2 1 = Byte Write Suspended 0 = Byte Write Completed

Read Array

SR.2 =

Read

Array Data

Done

Reading

Write D0H

Byte Write Completed

Write FFH

Read

Array Data

Yes

Write

Read

Write

Byte Write

Resume

Data = FFH Addr = X

Read array locations other than that being written.

Data = D0H Addr = X

Fig. 6 Byte Write Suspend/Resume Flowchart

Page 21

LH28F016SC-L/SCH-L

- 21 -

Set Lock-Bit

Complete

Start

Write 60H,

Block/Device Address

Write 01H/F1H,

Block/Device Address

Read

Status Register

SR.7 =

Full Status

Check if Desired

Repeat for subsequent lock-bit set operations. Full status check can be done after each lock-bit set

operation or after a sequence of lock-bit set operations. Write FFH after the last lock-bit set operation to place device

in read array mode.

BUS

OPERATION

Write

Read

Standby

COMMAND

Set

Block/Master

Lock-Bit

Setup

COMMENTS

Data = 60H Addr = Block Address (Block),

Device Address (Master)

Data = 01H (Block),

F1H (Master)

Addr = Block Address (Block),

Device Address (Master)

Status Register Data

Check SR.7 1 = WSM Ready 0 = WSM Busy

SR.3 =

FULL STATUS CHECK PROCEDURE

Read Status Register

Data (See Above)

PP Range Error

SR.1 =

Device Protect Error

BUS

OPERATION

COMMAND

COMMENTS

Standby

Check SR.1 1 = Device Protect Detect RP# = V

(Set Master Lock-Bit Operation)

RP# = V

IH, Master Lock-Bit is Set

(Set Block Lock-Bit Operation)

Check SR.4 1 = Set Lock-Bit Error

SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear Status Register command in cases where multiple lock-bits are set before full status is checked.

If error is detected, clear the status register before attempting retry or other error recovery.

Set

Block or Master

Lock-Bit Confirm

Set Lock-Bit

Successful

SR.4, 5 =

Command Sequence

Error

SR.4 =

Set Lock-Bit

Error

Standby

Check SR.3 1 = V

PP Error Detect

Standby

Check SR.4, 5 Both 1 = Command Sequence Error

Fig. 7 Set Block and Master Lock-Bit Flowchart

Page 22

LH28F016SC-L/SCH-L

- 22 -

Clear Block Lock-Bits

Complete

Start

Write 60H

Write D0H

Read

Status Register

SR.7 =

Full Status

Check if Desired

Write FFH after the last clear block lock-bits operation to place device in read array mode.

BUS

OPERATION

Write

Read

Standby

COMMAND

Clear Block

Lock-Bits

Setup

COMMENTS

Data = 60H Addr = X

Data = D0H Addr = X

Status Register Data

Check SR.7 1 = WSM Ready 0 = WSM Busy

SR.3 =

FULL STATUS CHECK PROCEDURE

Read Status Register

Data (See Above)

PP Range Error

SR.1 =

Device Protect Error

BUS

OPERATION

COMMAND

COMMENTS

Standby

Check SR.1 1 = Device Protect Detect RP# = V

IH, Master Lock-Bit is Set

Check SR.5 1 = Clear Block Lock-Bits Error

SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear Status Register command.

If error is detected, clear the status register before attempting retry or other error recovery.

Clear Block

Lock-Bits

Confirm

Clear Block Lock-Bits

Successful

SR.4, 5 =

Command Sequence

Error

SR.5 =

Clear Block Lock-Bits

Error

Standby

Check SR.3 1 = V

PP Error Detect

Standby

Check SR.4, 5 Both 1 = Command Sequence Error

Fig. 8 Clear Block Lock-Bits Flowchart

Page 23

LH28F016SC-L/SCH-L

5 DESIGN CONSIDERATIONS

5.1 Three-Line Output Control

The device will often be used in large memory arrays. SHARP provides three control inputs to accommodate multiple memory connections. Three-line control provides for :

a. Lowest possible memory power consumption. b. Complete assurance that data bus contention

will not occur.

To use these control inputs efficiently, an address decoder should enable CE# while OE# should be connected to all memory devices and the system’s READ# control line. This assures that only selected memory devices have active outputs while deselected memory devices are in standby mode. RP# should be connected to the system POWERGOOD signal to prevent unintended writes during system power transitions. POWERGOOD should also toggle during system reset.

5.2 RY/BY# and Block Erase, Byte Write, and Lock-Bit Configuration Polling

RY/BY# is a full CMOS output that provides a hardware method of detecting block erase, byte write and lock-bit configuration completion. It transitions low after block erase, byte write, or lockbit configuration commands and returns to V

when the WSM has finished executing the internal algorithm.

RY/BY# can be connected to an interrupt input of the system CPU or controller. It is active at all times. RY/BY# is also V

OH when the device is in

block erase suspend (with byte write inactive), byte write suspend or deep power-down modes.

5.3 Power Supply Decoupling

Flash memory power switching characteristics require careful device decoupling. System designers are interested in three supply current

issues; standby current levels, active current levels and transient peaks produced by falling and rising edges of CE# and OE#. Transient current magnitudes depend on the device outputs’ capacitive and inductive loading. Two-line control and proper decoupling capacitor selection will suppress transient voltage peaks. Each device should have a 0.1 µF ceramic capacitor connected between its V

CC and GND and between its VPP

and GND. These high-frequency, low inductance capacitors should be placed as close as possible to package leads. Additionally, for every eight devices, a 4.7 µF electrolytic capacitor should be placed at the array’s power supply connection between V

and GND. The bulk capacitor will overcome voltage slumps caused by PC board trace inductance.

5.4 VPP Trace on Printed Circuit Boards

Updating flash memories that reside in the target system requires that the printed circuit board designers pay attention to the V

PP power supply

trace. The V

PP pin supplies the memory cell current

for byte writing and block erasing. Use similar trace widths and layout considerations given to the V

power bus. Adequate VPP supply traces and decoupling will decrease V

PP voltage spikes and

overshoots.

5.5 VCC, VPP, RP# Transitions

Block erase, byte write and lock-bit configuration are not guaranteed if V

PP falls outside of a valid

PPH1/2/3 range, VCC falls outside of a valid VCC2/3/4

range, or RP# ≠ VIH or VHH. If VPP error is detected, status register bit SR.3 is set to "1" along with SR.4 or SR.5, depending on the attempted operation. If RP# transitions to V

IL during block

erase, byte write, or lock-bit configuration, RY/BY# will remain low until the reset operation is complete. Then, the operation will abort and the device will enter deep power-down. The aborted operation may leave data partially altered. Therefore, the command sequence must be repeated after normal

- 23 -

Page 24

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LH28F016SC-L/SCH-L

operation is restored. Device power-off or RP# transitions to V

IL clear the status register.

The CUI latches commands issued by system software and is not altered by V

PP or CE#

transitions or WSM actions. Its state is read array mode upon power-up, after exit from deep powerdown or after V

CC transitions below VLKO.

After block erase, byte write, or lock-bit configuration, even after V

PP transitions down to

PPLK, the CUI must be placed in read array mode

via the Read Array command if subsequent access to the memory array is desired.

5.6 Power-Up/Down Protection

The device is designed to offer protection against accidental block erasure, byte writing, or lock-bit configuration during power transitions. Upon powerup, the device is indifferent as to which power supply (V

PP or VCC) powers-up first. Internal

circuitry resets the CUI to read array mode at power-up.

A system designer must guard against spurious writes for V

CC voltages above VLKO when VPP is

active. Since both WE# and CE# must be low for a command write, driving either to V

IH will inhibit

writes. The CUI’s two-step command sequence architecture provides added level of protection against data alteration.

In-system block lock and unlock capability prevents inadvertent data alteration. The device is disabled while RP# = V

IL regardless of its control inputs

state.

5.7 Power Consumption

When designing portable systems, designers must consider battery power consumption not only during device operation, but also for data retention during system idle time. Flash memory’s nonvolatility increases usable battery life because data is retained when system power is removed.

In addition, deep power-down mode ensures extremely low power consumption even when system power is applied. For example, portable computing products and other power sensitive applications that use an array of devices for solidstate storage can consume negligible power by lowering RP# to V

IL standby or sleep modes. If

access is again needed, the devices can be read following the t

PHQV and tPHWL wake-up cycles

required after RP# is first raised to V

IH. See Section

6.2.4 through 6.2.6 "AC CHARACTERISTICS READ-ONLY and WRITE OPERATIONS" and Fig. 13, Fig. 14 and Fig. 15 for more information.

Page 25

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LH28F016SC-L/SCH-L

6 ELECTRICAL SPECIFICATIONS

6.1 Absolute Maximum Ratings

∗

Operating Temperature

• LH28F016SC-L During Read, Block Erase, Byte Write and Lock-Bit Configuration

........

0 to +70°C

(NOTE 1)

Temperature under Bias

.............

–10 to +80°C

• LH28F016SCH-L During Read, Block Erase, Byte Write and Lock-Bit Configuration

....

– 40 to +85°C

(NOTE 2)

Temperature under Bias

.............

– 40 to +85°C

Storage Temperature

........................

– 65 to +125°C

Voltage On Any Pin

(except VCC, VPP, and RP#)

....

– 2.0 to +7.0 V

(NOTE 3)

VCC Supply Voltage

.................

– 2.0 to +7.0 V

(NOTE 3)

VPP Update Voltage during

Block Erase, Byte Write and Lock-Bit Configuration

– 2.0 to +14.0 V

(NOTE 3, 4)

RP# Voltage with Respect to

GND during Lock-Bit Configuration Operations

– 2.0 to +14.0 V

(NOTE 3, 4)

Output Short Circuit Current

..............

100 mA

(NOTE 5)

∗

WARNING : Stressing the device beyond the

Absolute Maximum Ratings" may cause permanent damage. These are stress ratings only. Operation beyond the "Operating Conditions" is not recommended and extended exposure beyond the "Operating Conditions" may affect device reliability.

NOTES :

1. Operating temperature is for commercial product defined

by this specification.

2. Operating temperature is for extended temperature

product defined by this specification.

3. All specified voltages are with respect to GND. Minimum

DC voltage is – 0.5 V on input/output pins and – 0.2 V on V

CC and VPP pins. During transitions, this level may

undershoot to – 2.0 V for periods < 20 ns. Maximum DC voltage on input/output pins and V

CC is VCC+0.5 V

which, during transitions, may overshoot to V

CC+2.0 V

for periods < 20 ns.

4. Maximum DC voltage on V

PP and RP# may overshoot

to +14.0 V for periods < 20 ns.

5. Output shorted for no more than one second. No more

than one output shorted at a time.

NOTICE : The specifications are subject to change without notice. Verify with your local SHARP sales office that you have the latest datasheet before finalizing a design.

SYMBOL

PARAMETER NOTE MIN. MAX. UNIT VERSIONS

TA Operating Temperature 1

+70

C LH28F016SC-L

–40

+85

˚C LH28F016SCH-L VCC1 VCC Supply Voltage (2.7 to 3.6 V) 2 2.7 3.6 V VCC2 VCC Supply Voltage (3.3±0.3 V) 3.0 3.6 V VCC3 VCC Supply Voltage (5.0±0.25 V) 4.75 5.25 V

LH28F016SC-L95/SCH-L95

VCC4 VCC Supply Voltage (5.0±0.5 V) 4.50 5.50 V

6.2 Operating Conditions

NOTES :

1. Test condition : Ambient temperature

2. Block erase, byte write and lock-bit configuration operations with V

CC < 3.0 V should not be attempted.

Page 26

LH28F016SC-L/SCH-L

- 26 -

NOTE :

1. Sampled, not 100% tested.

SYMBOL PARAMETER TYP. MAX. UNIT CONDITION

CIN Input Capacitance 6 8 pF VIN = 0.0 V COUT Output Capacitance 8 12 pF VOUT = 0.0 V

6.2.1 CAPACITANCE

(NOTE 1)

TA = +25˚C, f = 1 MHz

6.2.2 AC INPUT/OUTPUT TEST CONDITIONS

TEST POINTSINPUT OUTPUT

1.35

2.7

0.0

Fig. 9 Transient Input/Output Reference Waveform for VCC = 2.7 to 3.6 V

1.5

3.0

0.0

TEST POINTSINPUT OUTPUT

Fig. 10 Transient Input/Output Reference Waveform for VCC = 3.3±0.3 V and

VCC = 5.0±0.25 V (High Speed Testing Configuration)

2.0

0.8

2.0

0.8

2.4

0.45

TEST POINTSINPUT OUTPUT

Fig. 11 Transient Input/Output Reference Waveform for

CC = 5.0±0.5 V (Standard Testing Configuration)

AC test inputs are driven at 2.7 V for a Logic "1" and 0.0 V for a Logic "0". Input timing begins, and output timing ends, at 1.35 V. Input rise and fall times (10% to 90%) < 10 ns.

AC test inputs are driven at 3.0 V for a Logic "1" and 0.0 V for a Logic "0". Input timing begins, and output timing ends, at 1.5 V. Input rise and fall times (10% to 90%) < 10 ns.

AC test inputs are driven at V

OH (2.4 VTTL) for a Logic "1" and VOL (0.45 VTTL) for a Logic "0". Input timing

begins at V

IH (2.0 VTTL) and VIL (0.8 VTTL). Output timing ends at VIH and VIL. Input rise and fall times (10% to

90%) < 10 ns.

Page 27

LH28F016SC-L/SCH-L

- 27 -

Fig. 12 Transient Equivalent Testing

Load Circuit

DEVICE

UNDER

TEST

L Includes Jig

Capacitance

RL = 3.3 kΩ

OUT

1.3 V

1N914

TEST CONFIGURATION CL (pF)

VCC = 3.3±0.3 V, 2.7 to 3.6 V 50 VCC = 5.0±0.25 V

(NOTE 1)

CC = 5.0±0.5 V 100

Test Configuration Capacitance Loading Value

NOTE :

1. Applied to high-speed products, LH28F016SC-L95 and LH28F016SCH-L95.

Page 28

- 28 -

SYMBOL

PARAMETER

NOTE

= 2.7 to 3.6 V

VCC= 3.3±0.3 V VCC= 5.0±0.5 V

UNIT

TEST

TYP. MAX. TYP. MAX. TYP. MAX.

CONDITIONS

LI Input Load Current 1 ±0.5 ±0.5 ±1 µA

CC = VCC Max.

VIN = VCC or GND

LO Output Leakage Current 1 ±0.5 ±0.5 ±10 µA

CC = VCC Max.

VOUT = VCC or GND CMOS Inputs

20 100 20 100 25 100 µA V

CC = VCC Max.

ICCS VCC Standby Current

1, 3, 6

CE# = RP# = VCC±0.2 V TTL Inputs

0.1 2 0.2 2 0.4 2 mA V

CC = VCC Max.

CE# = RP# = VIH

LH28F016

10 10 10

ICCD

VCCDeep Power-

SC-L

µA

RP# = GND±0.2 V

Down Current

LH28F016

20 20 20

IOUT (RY/BY#) = 0 mA

SCH-L

CMOS Inputs V

CC = VCC Max.

6 12 7 12 17 35 mA

CE# = GND f = 5 MHz (3.3 V, 2.7 V)

8 MHz (5 V)

ICCR VCC Read Current

1, 5, 6

IOUT = 0 mA TTL Inputs V

CC = VCC Max.

7 18 8 18 20 50 mA

CE# = GND f = 5 MHz (3.3 V, 2.7 V),

8 MHz (5 V)

IOUT = 0 mA

VCC Byte Write or

—— 17——mAV

PP = 3.3±0.3 V

ICCW

Set Lock-Bit Current

1, 7

— — 17 35 mA V

PP = 5.0±0.5 V

— — 12 30 mA VPP = 12.0±0.6 V

VCC Block Erase or — — 17 — — mA VPP = 3.3±0.3 V

ICCE Clear Block Lock-Bits 1, 7 — — 17 30 mA VPP = 5.0±0.5 V

Current — — 12 25 mA VPP = 12.0±0.6 V

CCWS VCC Byte Write or Block

1, 2 — — 1 6 1 10 mA CE# = V

ICCES Erase Suspend Current IPPS VPP Standby or

±2 ±15 ±2 ±15 ±2 ±15 µA VPP ≤ VCC

IPPR Read Current 10 200 10 200 10 200 µA VPP > VCC IPPD

VPP Deep Power-Down

1 0.1 5 0.1 5 0.1 5 µA RP# = GND±0.2 V

Current VPP Byte Write or

—— 40——mAV

PP = 3.3±0.3 V

IPPW

Set Lock-Bit Current

1, 7 — — 40 40 mA V

PP = 5.0±0.5 V

— — 15 15 mA VPP = 12.0±0.6 V

VPP Block Erase or

—— 20——mAV

PP = 3.3±0.3 V

IPPE

Clear Block Lock-Bits

1, 7 — — 20 20 mA V

PP = 5.0±0.5 V

Current

— — 15 15 mA V

PP = 12.0±0.6 V

PPWS VPP Byte Write or Block

1 — — 10 200 10 200 µA V

PP = VPPH1/2/3

IPPES Erase Suspend Current

LH28F016SC-L/SCH-L

6.2.3 DC CHARACTERISTICS

Page 29

LH28F016SC-L/SCH-L

- 29 -

6.2.3 DC CHARACTERISTICS (contd.)

SYMBOL

PARAMETER

NOTE

VCC= 2.7 to 3.6 V

VCC= 3.3±0.3 V VCC= 5.0±0.5 V

UNIT

TEST

MIN. MAX. MIN. MAX. MIN. MAX.

CONDITIONS

VIL

Input Low Voltage

–

0.5 0.8

–

0.5 0.8

–

0.5 0.8 V

IH Input High Voltage 7 2.0

2.0

+0.5 +0.5 +0.5

= VCCMin.

OL Output Low Voltage 3, 7 0.4 0.4 0.45 V I

= 5.8 mA (5 V)

IOL= 2.0 mA (3.3 V, 2.7 V)

Output High Voltage

= VCCMin.

OH1

(TTL)

3, 7 2.4 2.4 2.4 V I

= –2.5 mA (5 V)

IOH= –2.0 mA (3.3 V, 2.7 V)

0.85 0.85 0.85 V

VCC= VCCMin.

VOH2

Output High Voltage

3, 7

VCC VCC VCC IOH= –2.5 mA

(CMOS) V

CC VCC VCC

= VCCMin.

–

0.4

–

0.4

–

0.4 I

= –100 µA

PPLK

VPPLockout Voltage during

4, 7 1.5 1.5 1.5 V

Normal Operations VPP Voltage during

PPH1 Byte Write, Block Erase — — 3.0 3.6 — — V

or Lock-Bit Operations V

PP Voltage during

PPH2 Byte Write, Block Erase — — 4.5 5.5 4.5 5.5 V

or Lock-Bit Operations V

PP Voltage during

PPH3 Byte Write, Block Erase — — 11.4 12.6 11.4 12.6 V

or Lock-Bit Operations

VLKO VCC Lockout Voltage 2.0 2.0 2.0 V

Set master lock-bit

HH RP# Unlock Voltage 8, 9 — — 11.4 12.6 11.4 12.6 V Override master and

block lock-bit

NOTES :

1. All currents are in RMS unless otherwise noted. Typical values at nominal V

CC voltage and TA = +25˚C. These

currents are valid for all product versions (packages and speeds).

2. I

CCWS and ICCES are specified with the device de-

selected. If reading or byte writing in erase suspend mode, the device’s current draw is the sum of I

CCWS or

CCES and ICCR or ICCW, respectively.

3. Includes RY/BY#.

4. Block erases, byte writes, and lock-bit configurations are inhibited when V

PP ≤ VPPLK, and not guaranteed in the

range between V

PPLK (max.) and VPPH1 (min.), between

PPH1 (max.) and VPPH2 (min.), between VPPH2 (max.)

and V

PPH3 (min.), and above VPPH3 (max.).

5. Automatic Power Saving (APS) reduces typical I

CCR to

1 mA at 5 V V

CC and 3 mA at 2.7 V and 3.3 V VCC in

static operation.

6. CMOS inputs are either V

CC±0.2 V or GND±0.2 V. TTL

inputs are either V

IL or VIH.

7. Sampled, not 100% tested.

8. Master lock-bit set operations are inhibited when RP# = V

IH. Block lock-bit configuration operations are inhibited

when the master lock-bit is set and RP# = V

IH. Block

erases and byte writes are inhibited when the corresponding block lock-bit is set and RP# = V

IH. Block

erase, byte write, and lock-bit configuration operations are not guaranteed with V

CC < 3.0 V or VIH < RP# <

HH and should not be attempted.

9. RP# connection to a V

HH supply is allowed for a

maximum cumulative period of 80 hours.

Page 30

LH28F016SC-L/SCH-L

- 30 -

6.2.4 AC CHARACTERISTICS - READ-ONLY OPERATIONS

(NOTE 1)

• VCC = 2.7 to 3.6 V, TA = 0 to +70˚C or –40 to +85˚C

VERSIONS

LH28F016SC-L95 LH28F016SC-L12

LH28F016SCH-L95 LH28F016SCH-L12

UNIT

SYMBOL

PARAMETER NOTE MIN. MAX. MIN. MAX.

tAVAV Read Cycle Time 150 170 ns tAVQV Address to Output Delay 150 170 ns tELQV CE# to Output Delay 2 150 170 ns tPHQV RP# High to Output Delay 600 600 ns tGLQV OE# to Output Delay 2 50 55 ns tELQX CE# to Output in Low Z 3 0 0 ns tEHQZ CE# High to Output in High Z 3 55 55 ns tGLQX OE# to Output in Low Z 3 0 0 ns tGHQZ OE# High to Output in High Z 3 20 25 ns

Output Hold from Address, CE# or

30 0 ns

OE# Change, Whichever Occurs First

VERSIONS

LH28F016SC-L95 LH28F016SC-L12

LH28F016SCH-L95 LH28F016SCH-L12

UNIT

SYMBOL

PARAMETER NOTE MIN. MAX. MIN. MAX.

tAVAV Read Cycle Time 120 150 ns tAVQV Address to Output Delay 120 150 ns tELQV CE# to Output Delay 2 120 150 ns tPHQV RP# High to Output Delay 600 600 ns tGLQV OE# to Output Delay 2 50 55 ns tELQX CE# to Output in Low Z 3 0 0 ns tEHQZ CE# High to Output in High Z 3 55 55 ns tGLQX OE# to Output in Low Z 3 0 0 ns tGHQZ OE# High to Output in High Z 3 20 25 ns

Output Hold from Address, CE# or

30 0 ns

OE# Change, Whichever Occurs First

NOTES :

1. See AC Input/Output Reference Waveform (Fig. 9 through Fig. 11) for maximum allowable input slew rate.

2. OE# may be delayed up to t

ELQV-tGLQV after the falling edge of CE# without impact on tELQV.

3. Sampled, not 100% tested.

•VCC = 3.3±0.3 V, TA = 0 to +70˚C or –40 to +85 ˚C

Page 31

- 31 -

SYMBOL

PARAMETER NOTE MIN. MAX. MIN. MAX. MIN. MAX.

tAVAV Read Cycle Time 95 100 120 ns tAVQV Address to Output Delay 95 100 120 ns tELQV CE# to Output Delay 2 95 100 120 ns tPHQV RP# High to Output Delay 400 400 400 ns tGLQV OE# to Output Delay 2 40 45 50 ns tELQX CE# to Output in Low Z 3 0 0 0 ns tEHQZ CE# High to Output in High Z 3 55 55 55 ns tGLQX OE# to Output in Low Z 3 0 0 0 ns tGHQZ OE# High to Output in High Z 3 10 10 15 ns

Output Hold from Address,

OH CE# or OE# Change, 3 0 0 0 ns

Whichever Occurs First

LH28F016SC-L/SCH-L

VERSIONS

VCC±0.25 V

VCC±0.5 V

(NOTE 4)

LH28F016SC-L95

LH28F016SCH-L95

(NOTE 5)

LH28F016SC-L12

LH28F016SCH-L12

(NOTE 5)

LH28F016SC-L95

LH28F016SCH-L95

UNIT

NOTES :

1. See AC Input/Output Reference Waveform (Fig. 9 through Fig. 11) for maximum allowable input slew rate.

2. OE# may be delayed up to t

ELQV-tGLQV after the falling

edge of CE# without impact on t

ELQV.

3. Sampled, not 100% tested.

4. See Fig. 10 "Transient Input/Output Reference

Waveform" and Fig. 12 "Transient Equivalent Testing Load Circuit" (High Speed Configuration) for testing

characteristics.

5. See Fig. 11 "Transient Input/Output Reference

Waveform" and Fig. 12 "Transient Equivalent Testing Load Circuit" (Standard Configuration) for testing

characteristics.

6.2.4 AC CHARACTERISTICS - READ-ONLY OPERATIONS (contd.)

(NOTE 1)

•VCC = 5.0±0.25 V, 5.0±0.5 V, TA = 0 to +70˚C or –40 to +85˚C

Page 32

LH28F016SC-L/SCH-L

- 32 -

Standby

Device

Address Selection

Data Valid

ADDRESSES (A)

CE# (E)

OE# (G)

WE# (W)

DATA (D/Q)

(DQ

- DQ7)

RP# (P)

High Z High Z

AVAV

EHQZ

GHQZ

GLQV

ELQV

GLQX

ELQX

AVQV

PHQV

Valid Output

Address Stable

Fig. 13 AC Waveform for Read Operations

Page 33

LH28F016SC-L/SCH-L

- 33 -

6.2.5 AC CHARACTERISTICS - WRITE OPERATION

(NOTE 1)

• VCC = 2.7 to 3.6 V, TA = 0 to +70˚C or –40 to +85˚C

VERSIONS

LH28F016SC-L95 LH28F016SC-L12

LH28F016SCH-L95 LH28F016SCH-L12

UNIT

SYMBOL

PARAMETER NOTE MIN. MAX. MIN. MAX.

AVAV

Write Cycle Time 150 170 ns

PHWL

RP# High Recovery to WE# Going Low 2 1 1 µs

ELWL

CE# Setup to WE# Going Low 10 10 ns

WLWH

WE# Pulse Width 50 50 ns

AVWH

Address Setup to WE# Going High 3 50 50 ns

DVWH

Data Setup to WE# Going High 3 50 50 ns

WHDX

Data Hold from WE# High 5 5 ns

WHAX

Address Hold from WE# High 5 5 ns

WHEH

CE# Hold from WE# High 10 10 ns

WHWL

WE# Pulse Width High 30 30 ns

tWHGL Write Recovery before Read 0 0 ns

VERSIONS

LH28F016SC-L95 LH28F016SC-L12

LH28F016SCH-L95 LH28F016SCH-L12

UNIT

SYMBOL

PARAMETER NOTE MIN. MAX. MIN. MAX.

tAVAV Write Cycle Time 120 150 ns tPHWL RP# High Recovery to WE# Going Low 2 1 1 µs tELWL CE# Setup to WE# Going Low 10 10 ns tWLWH WE# Pulse Width 50 50 ns tPHHWH RP# VHH Setup to WE# Going High 2 100 100 ns tVPWH VPP Setup to WE# Going High 2 100 100 ns tAVWH Address Setup to WE# Going High 3 50 50 ns tDVWH Data Setup to WE# Going High 3 50 50 ns tWHDX Data Hold from WE# High 5 5 ns tWHAX Address Hold from WE# High 5 5 ns tWHEH CE# Hold from WE# High 10 10 ns tWHWL WE# Pulse Width High 30 30 ns tWHRL WE# High to RY/BY# Going Low 100 100 ns tWHGL Write Recovery before Read 0 0 ns tQVVL VPP Hold from Valid SRD, RY/BY# High 2, 4 0 0 ns

tQVPH RP# VHH Hold from Valid SRD, RY/BY# High 2, 4 0 0 ns

•VCC = 3.3±0.3 V, TA = 0 to +70˚C or – 40 to +85˚C

NOTES :

1. Read timing characteristics during block erase, byte write and lock-bit configuration operations are the same as during read-only operations. Refer to Section 6.2.4 "AC CHARACTERISTICS" for read-only operations.

2. Sampled, not 100% tested.

3. Refer to Table 3 for valid A

IN and DIN for block erase,

byte write, or lock-bit configuration.

4. V

PP should be held at VPPH1/2/3 (and if necessary RP#

should be held at V

HH) until determination of block erase,

byte write, or lock-bit configuration success (SR.1/3/4/5 = 0).

Page 34

LH28F016SC-L/SCH-L

- 34 -

NOTES :

2. Sampled, not 100% tested.

3. Refer to Table 3 for valid A

IN and DIN for block erase,

byte write, or lock-bit configuration.

4. V

PP should be held at VPPH1/2/3 (and if necessary RP#

should be held at V

HH) until determination of block erase,

byte write, or lock-bit configuration success (SR.1/3/4/5 = 0).

5. See Fig. 10 "Transient Input/Output Reference

Waveform" and Fig. 12 "Transient Equivalent Testing Load Circuit" (High Seed Configuration) for testing

characteristics.

6. See Fig. 11 "Transient Input/Output Reference

Waveform" and Fig. 12 "Transient Equivalent Testing Load Circuit" (Standard Configuration) for testing

characteristics.

SYMBOL

PARAMETER NOTE MIN. MAX. MIN. MAX. MIN. MAX.

AVAV

Write Cycle Time 95 100 120 ns

PHWL

RP# High Recovery to WE#

2111µs

Going Low

ELWL

CE# Setup to WE# Going Low 10 10 10 ns

WLWH

WE# Pulse Width 40 40 40 ns

PHHWH

RP# VHHSetup to WE# Going High

2 100 100 100 ns

VPWH

VPPSetup to WE# Going High 2 100 100 100 ns

AVWH

Address Setup to WE# Going High

3404040ns

DVWH

Data Setup to WE# Going High 3 40 40 40 ns

WHDX

Data Hold from WE# High 5 5 5 ns

WHAX

Address Hold from WE# High 5 5 5 ns

WHEH

CE# Hold from WE# High 10 10 10 ns

WHWL

WE# Pulse Width High 30 30 30 ns

WHRL

WE# High to RY/BY# Going Low

90 90 90 ns

WHGL

Write Recovery before Read 0 0 0 ns

QVVL

VPPHold from Valid SRD,

2, 4 0 0 0 ns

RY/BY# High

QVPH

RP# VHHHold from Valid SRD,

2, 4 0 0 0 ns

RY/BY# High

VERSIONS

VCC±0.25 V

VCC±0.5 V

(NOTE 5)

LH28F016SC-L95

LH28F016SCH-L95

(NOTE 6)

LH28F016SC-L12

LH28F016SCH-L12

(NOTE 6)

LH28F016SC-L95

LH28F016SCH-L95

UNIT

6.2.5 AC CHARACTERISTICS - WRITE OPERATION (contd.)

(NOTE 1)

•VCC = 5.0±0.25 V, 5.0±0.5 V, TA = 0 to +70˚C or –40 to +85˚C

Page 35

LH28F016SC-L/SCH-L

- 35 -

VPP (V)

VIH

VOH

VOL

VIH

VIL

VPPH1/2/3

VPPLK

RP# (P)

RY/BY# (R)

DATA (D/Q)

WE# (W)

OE# (G)

CE# (E)

ADDRESSES (A)

AVAV tAVWH

tELWL

tWHGL

tWHQV1/2/3/4

tWHWL

tWHDX

DIN DIN

AIN AIN

High Z

PHWL

tWHRL

Valid

SRD

tVPWH

tWHEH

VIL

VHH

tQVPHtPHHWH

(NOTE 1) (NOTE 2) (NOTE 3) (NOTE 4) (NOTE 5) (NOTE 6)

tDVWH

tWLWH

tWHAX

tQVVL

NOTES :

1. VCC power-up and standby.

2. Write block erase or byte write setup.

3. Write block erase confirm or valid address and data.

4. Automated erase or program delay.

5. Read status register data.

6. Write Read Array command.

Fig. 14 AC Waveform for WE#-Controlled Write Operations

Page 36

LH28F016SC-L/SCH-L

- 36 -

6.2.6 ALTERNATIVE CE#-CONTROLLED WRITES

(NOTE 1)

•VCC = 2.7 to 3.6 V, TA = 0 to +70˚C or –40 to +85˚C VERSIONS

LH28F016SC-L95 LH28F016SC-L12

LH28F016SCH-L95 LH28F016SCH-L12 UNIT

SYMBOL

PARAMETER NOTE MIN. MAX. MIN. MAX.

AVAV

Write Cycle Time 150 170 ns

PHEL

RP# High Recovery to CE# Going Low 2 1 1 µs

WLEL

WE# Setup to CE# Going Low 0 0 ns

ELEH

CE# Pulse Width 70 70 ns

AVEH

Address Setup to CE# Going High 3 50 50 ns

DVEH

Data Setup to CE# Going High 3 50 50 ns

EHDX

Data Hold from CE# High 5 5 ns

EHAX

Address Hold from CE# High 5 5 ns

EHWH

WE# Hold from CE# High 0 0 ns

EHEL

CE# Pulse Width High 25 25 ns

tEHGL Write Recovery before Read 0 0 ns

•VCC = 3.3±0.3 V, TA = 0 to +70˚C or –40 to +85˚C VERSIONS

LH28F016SC-L95 LH28F016SC-L12

LH28F016SCH-L95 LH28F016SCH-L12 UNIT

SYMBOL

PARAMETER NOTE MIN. MAX. MIN. MAX.

AVAV

Write Cycle Time 120 150 ns

PHEL

RP# High Recovery to CE# Going Low 2 1 1 µs

WLEL

WE# Setup to CE# Going Low 0 0 ns

ELEH

CE# Pulse Width 70 70 ns

PHHEH

RP# VHHSetup to CE# Going High 2 100 100 ns

VPEH

VPPSetup to CE# Going High 2 100 100 ns

AVEH

Address Setup to CE# Going High 3 50 50 ns

DVEH

Data Setup to CE# Going High 3 50 50 ns

EHDX

Data Hold from CE# High 5 5 ns

EHAX

Address Hold from CE# High 5 5 ns

EHWH

WE# Hold from CE# High 0 0 ns

EHEL

CE# Pulse Width High 25 25 ns

EHRL

CE# High to RY/BY# Going Low 100 100 ns

EHGL

Write Recovery before Read 0 0 ns

QVVL

VPPHold from Valid SRD, RY/BY# High 2, 4 0 0 ns

tQVPH RP# VHH Hold from Valid SRD, RY/BY# High 2, 4 0 0 ns

NOTES :

1. In systems where CE# defines the write pulse width (within a longer WE# timing waveform), all setup, hold, and inactive WE# times should be measured relative to the CE# waveform.

2. Sampled, not 100% tested.

3. Refer to Table 3 for valid A

IN and DIN for block erase,

byte write, or lock-bit configuration.

4. V

PP should be held at VPPH1/2/3 (and if necessary RP#

should be held at V

HH) until determination of block erase,

byte write, or lock-bit configuration success (SR.1/3/4/5 = 0).

Page 37

LH28F016SC-L/SCH-L

- 37 -

SYMBOL

PARAMETER NOTE MIN. MAX. MIN. MAX. MIN. MAX.

AVAV

Write Cycle Time 95 100 120 ns

PHEL

RP# High Recovery to CE#

2111µs

Going Low

WLEL

WE# Setup to CE# Going Low 0 0 0 ns

ELEH

CE# Pulse Width 50 50 50 ns

PHHEH

RP# VHHSetup to CE# Going High

2 100 100 100 ns

VPEH

VPP Setup to CE# Going High 2 100 100 100 ns

AVEH

Address Setup to CE# Going High

3404040ns

DVEH

Data Setup to CE# Going High 3 40 40 40 ns

EHDX

Data Hold from CE# High 5 5 5 ns

EHAX

Address Hold from CE# High 5 5 5 ns

EHWH

WE# Hold from CE# High 0 0 0 ns

EHEL

CE# Pulse Width High 25 25 25 ns

EHRL

CE# High to RY/BY# Going Low 90 90 90 ns

EHGL

Write Recovery before Read 0 0 0 ns

QVVL

VPP Hold from Valid SRD,

2, 4 0 0 0 ns

RY/BY# High

QVPH

RP# VHH Hold from Valid SRD,

2, 4 0 0 0 ns

RY/BY# High

VERSIONS

VCC±0.25 V

VCC±0.5 V

(NOTE 5)

LH28F016SC-L95

LH28F016SCH-L95

(NOTE 6)

LH28F016SC-L12

LH28F016SCH-L12

(NOTE 6)

LH28F016SC-L95

LH28F016SCH-L95

UNIT

NOTES :

1. In systems where CE# defines the write pulse width (within a longer WE# timing waveform), all setup, hold, and inactive WE# times should be measured relative to the CE# waveform.

2. Sampled, not 100% tested.

3. Refer to Table 3 for valid A

IN and DIN for block erase,

byte write, or lock-bit configuration.

4. V

PP should be held at VPPH1/2/3 (and if necessary RP#

should be held at V

HH) until determination of block erase,

byte write, or lock-bit configuration success (SR.1/3/4/5 = 0).

5. See Fig. 10 "Transient Input/Output Reference

Waveform" and Fig. 12 "Transient Equivalent Testing Load Circuit" (High Seed Configuration) for testing

characteristics.

6. See Fig. 11 "Transient Input/Output Reference

Waveform" and Fig. 12 "Transient Equivalent Testing Load Circuit" (Standard Configuration) for testing

characteristics.

6.2.6 ALTERNATIVE CE#-CONTROLLED WRITES (contd.)

(NOTE 1)

•VCC = 5.0±0.25 V, 5.0±0.5 V, TA = 0 to +70˚C or –40 to +85˚C

Page 38

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- 38 -

VPP (V)

VIH

VOH

VOL

VIH

VIL

VPPH1/2/3

VPPLK

RP# (P)

RY/BY# (R)

DATA (D/Q)

CE# (E)

OE# (G)

WE# (W)

ADDRESSES (A)

AVAV tAVEH

tWLEL

tEHGL

tEHQV1/2/3/4

tEHEL

tEHDX

DINDIN

AIN AIN

High Z

PHEL

tEHRL

Valid

SRD

tVPEH

tEHWH

VIL

VHH

tQVPHtPHHEH

(NOTE 1) (NOTE 2) (NOTE 3) (NOTE 4) (NOTE 5) (NOTE 6)

tDVEH

tELEH

tEHAX

tQVVL

NOTES :

1. VCC power-up and standby.

2. Write block erase or byte write setup.

3. Write block erase confirm or valid address and data.

4. Automated erase or program delay.

5. Read status register data.

6. Write Read Array command.

Fig. 15 AC Waveform for CE#-Controlled Write Operations

Page 39

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6.2.7 RESET OPERATIONS

VIH

VOH

VOL

VIL

RY/BY# (R)

(A) Reset During Read Array Mode

(B) Reset During Block Erase, Byte Write, or Lock-Bit Configuration

PLPH

RP# (P)

VIH

VOH

VOL

VIL

RY/BY# (R)

PLRH

tPLPH

RP# (P)

VIH

2.7 V/3.3 V/5 V

VIL

VCC

t235VPH

RP# (P)

Fig. 16 AC Waveform for Reset Operation

Reset AC Specifications

(NOTE 1)

NOTES :

1. These specifications are valid for all product versions (packages and speeds).

2. If RP# is asserted while a block erase, byte write, or lock-bit configuration operation is not executing, the reset will complete within 100 ns.

3. A reset time, t

PHQV, is required from the latter of RY/BY#

or RP# going high until outputs are valid.

4. When the device power-up, holding RP#-low minimum 100 ns is required after V

CC has been in predefined

range and also has been in stable there.

VCC = 2.7 to 3.6 V VCC = 3.3±0.3 V VCC = 5.0±0.5 V

SYMBOL

PARAMETER NOTE

MIN. MAX. MIN. MAX. MIN. MAX.

UNIT

RP# Pulse Low Time

PLPH

(If RP# is tied to VCC, this 100 100 100 ns specification is not applicable) RP# Low to Reset during

PLRH

Block Erase, Byte Write or 2, 3 — 20 12 µs Lock-Bit Configuration V

2.7 V to RP# High

235VPHVCC

3.0 V to RP# High 4 100 100 100 ns

4.5 V to RP# High

Page 40

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6.2.8

BLOCK ERASE, BYTE WRITE AND LOCK-BIT CONFIGURATION PERFORMANCE

(NOTE 3, 4)

•VCC = 3.3±0.3 V, TA = 0 to +70˚C or –40 to +85˚C VPP = 3.3±0.3 V VPP = 5.0±0.5 V VPP = 12.0±0.6 V

SYMBOL

PARAMETER NOTE

MIN.

TYP.

(NOTE 1)

MAX. MIN.

TYP.

(NOTE 1)

MAX. MIN.

TYP.

(NOTE 1)

MAX.

UNIT

WHQV1

Byte Write Time 2 15 17 TBD 8.2 9.3 TBD 6.7 7.6 TBD µs

tEHQV1

Block Write Time 2 1 1.1 TBD 0.5 0.5 TBD 0.4 0.5 TBD s

tWHQV2

Block Erase Time 2 1.5 1.8 TBD 1 1.2 TBD 0.8 1.1 TBD s

tEHQV2 tWHQV3

Set Lock-Bit Time 2 18 21 TBD 11.2 13.3 TBD 9.7 11.6 TBD µs

tEHQV3 tWHQV4 Clear Block Lock-Bits

2 1.5 1.8 TBD 1 1.2 TBD 0.8 1.1 TBD s

tEHQV4 Time t

WHRH1 Byte Write Suspend

7.1 10 6.6 9.3 7.4 10.4 µs

tEHRH1 Latency Time to Read tWHRH2

Erase Suspend Latency

15.2 21.1 12.3 17.2 12.3 17.2 µs

EHRH2

Time to Read

•VCC = 5.0±0.25 V, 5.0±0.5 V, TA = 0 to +70˚C or –40 to +85˚C

VPP = 5.0±0.5 V VPP = 12.0±0.6 V

SYMBOL

PARAMETER NOTE

MIN.

TYP.

(NOTE 1)

MAX. MIN.

TYP.

(NOTE 1)

MAX.

UNIT

WHQV1

Byte Write Time 2 6.5 8 TBD 4.8 6 TBD µs

EHQV1

Block Write Time 2 0.4 0.5 TBD 0.3 0.4 TBD s

WHQV2

Block Erase Time 2 0.9 1.1 TBD 0.3 1.0 TBD s

EHQV2

WHQV3

Set Lock-Bit Time 2 9.5 12 TBD 7.8 10 TBD µs

EHQV3

WHQV4

Clear Block Lock-Bits Time 2 0.9 1.1 TBD 0.3 1.0 TBD s

EHQV4

WHRH1

Byte Write Suspend Latency Time to Read 5.6 7 5.2 7.5 µs

EHRH1

WHRH2

Erase Suspend Latency Time to Read 9.4 13.1 9.8 12.6 µs

EHRH2

NOTES :

1. Typical values measured at TA = +25˚C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to change based on device characterization.

2. Excludes system-level overhead.

3. These performance numbers are valid for all speed versions.

4. Sampled, not 100% tested.

Page 41

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7 ORDERING INFORMATION

LH28F016SC

(H)

T-L95

Device Density 016 = 16 M-bit

Access Speed (ns) 95 : 95 ns (5.0±0.25 V), 100 ns (5.0±0.5 V),

120 ns (3.3±0.3 V), 150 ns (2.7 to 3.6 V)

12 : 120 ns (5.0±0.5 V), 150 ns (3.3±0.3 V),

170 ns (2.7 to 3.6 V)

Package T = 40-pin TSOP (I) (TSOP040-P-1020) Normal bend R = 40-pin TSOP (I) (TSOP040-P-1020) Reverse bend N = 44-pin SOP (SOP044-P-0600) [LH28F016SC-L] B = 48-ball CSP (FBGA048-P-0810)

Architecture S = Symmetrical Block

Power Supply Type C = SmartVoltage Technology

Operating Temperature

Blank = 0 to +70°C

H = –40 to +85°C

Product line designator for all SHARP Flash products

VALID OPERATIONAL COMBINATIONS

= 2.7 to 3.6 V VCC= 3.3±0.3 V VCC= 5.0 ±0.5 V VCC= 5.0 ±0.25 V

OPTION ORDER CODE

50 pF load, 50 pF load, 100 pF load, 30 pF load,

1.35 V I/O Levels 1.5 V I/O Levels TTL I/O Levels 1.5 V I/O Levels

LH28F016SCXX-L95

150 ns 120 ns 100 ns 95 ns

LH28F016SCXX-L12

170 ns 150 ns 120 ns

Page 42

PACKAGING

±0.2

±0.05

±0.1

MAX.

±0.2

TYP.

Package base plane

20.0

±0.3

19.0

±0.3

0.125

0.435

10.0

18.4

0.5

1.20

0.115

0.2

±0.08

0.10

0.08

0.995

±0.1

40 TSOP (TSOP040-P-1020)

Page 43

PACKAGING

13.2

16.0

1.27

44_0.4

0.15

(14.4)

±0.1

TYP.

±0.4

±0.2

±0.05

0.15 M

0.15

28.2

2.7

1.275

±0.2

±0.1

±0.2

0.15

0.1

Package base plane

44 SOP (SOP044-P-0600)

Page 44

PACKAGING

0.30 AB SCD

0.15

0.4

TYP.

1.2

MAX.

0.35

±0.05

0.1 S

0.45

±0.03

3.0

TYP.

0.8

TYP.

0.4

TYP.

1.2

TYP.

0.8

TYP.

0.4

TYP.

0.1/ / S

∗

8.0

0.2

10.0

0.2

∗Land hole diameter

for ball mounting

48 CSP (FBGA048-P-0810)