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Mini TOPLED® RG LS M770, LO M770, LY M770
LG M770, LP M770
Besondere Merkmale
● Gehäusefarbe: weiß
● als optischer Indikator einsetzbar
● zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung
● für alle SMT-Bestück- und Löttechniken geeignet
● gegurtet (12-mm-Filmgurt)
● Störimpulsfest nach DIN 40839
Features
● color of package: white
● for use as optical indicator
● for backlighting, optical coupling into light pipes and lenses
● suitable for all SMT assembly and soldering methods
● available taped on reel (12 mm tape)
● load dump resistant acc. to DIN 40839
VPL06926
Semiconductor Group 1 11.96
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LS M770, LO M770, LY M770
LG M770, LP M770
Typ
Type
LS M770-HK
LS M770-J
LS M770-K
LS M770-JM
LO M770-HK
LO M770-J
LO M770-K
LO M770-JM
LY M770-HK
LY M770-J
LY M770-K
LY M770-JM
LG M770-HK
LG M770-J
LG M770-K
LG M770-JM
Emissionsfarbe
Farbe der
Lichtaustritts-
Lichtstärke
fläche
Color of
Emission
Color of the
Light Emitting
Area
Luminous
Intensity
I
= 10 mA
F
I
(mcd)
V
super-red colorless clear 2.5 ... 12.5
4.0 ... 8.0
6.3 ... 12.5
4.0 ... 32.0
orange colorless clear 2.5 ... 12.5
4.0 ... 8.0
6.3 ... 12.5
4.0 ... 32.0
yellow colorless clear 2.5 ... 12.5
4.0 ... 8.0
6.3 ... 12.5
4.0 ... 32.0
green colorless clear 2.5 ... 12.5
4.0 ... 8.0
6.3 ... 12.5
4.0 ... 32.0
Lichtstrom
Luminous
Flux
I
= 10 mA
F
ΦV (mlm)
18 (typ.)
30 (typ.)
-
18 (typ.)
30 (typ.)
-
18 (typ.)
30 (typ.)
-
18 (typ.)
30 (typ.)
-
Bestellnummer
Ordering Code
Q62703-Q3326
Q62703-Q3327
Q62703-Q3328
Q62703-Q3329
Q62703-Q3330
Q62703-Q3331
Q62703-Q3332
Q62703-Q3333
Q62703-Q3334
Q62703-Q3336
Q62703-Q3335
Q62703-Q3337
Q62703-Q3338
Q62703-Q3339
Q62703-Q3340
Q62703-Q3341
LP M770-FJ
LP M770-G
LP M770-H
LP M770-GK
pure green colorless clear 1.0 ... 8.0
1.6 ... 3.2
2.5 ... 5.0
1.6 ... 12.5
Streuung der Lichtstärke in einer Verpackungseinheit I
Luminous intensity ratio in one packaging unit I
V max
/ I
V max
V min
/ I
V min
≤ 2.0.
8 (typ.)
12 (typ.)
-
≤ 2.0.
Q62703-Q3342
Q62703-Q3343
Q62703-Q3344
Q62703-Q3345
Semiconductor Group 2
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Grenzwerte
Maximum Ratings
LS M770, LO M770, LY M770
LG M770, LP M770
Bezeichnung
Parameter
Betriebstemperatur
Operating temperature range
Lagertemperatur
Storage temperature range
Sperrschichttemperatur
Junction temperature
Durchlaßstrom
Forward current
Stoßstrom
Surge current
t ≤ 10 µs, D = 0.005
Sperrspanung
Reverse voltage
Verlustleistung
Power dissipation
Wärmewiderstand
Thermal resistance
Sperrschicht / Umgebung
Junction / air
)
Montage auf PC-board*
mounted on PC board*) (pad size ≥ 16 mm2)
(Padgröße ≥ 16 mm2)
Symbol
Symbol
T
op
T
stg
T
j
I
F
I
FM
V
R
P
tot
R
th JA
Werte
Values
Einheit
Unit
– 55 ... + 100 ˚C
– 55 ... + 100 ˚C
+ 100 ˚C
30 mA
0.5 A
5V
100 mW
530 K/W
)
PC-board: FR4
*
Semiconductor Group 3
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Kennwerte (TA = 25 ˚C)
Characteristics
LS M770, LO M770, LY M770
LG M770, LP M770
Bezeichnung
Parameter
Wellenlänge des emittierten Lichtes (typ.)
Wavelength at peak emission (typ.)
I
= 10 mA
F
Dominantwellenlänge (typ.)
Dominant wavelength (typ.)
I
= 10 mA
F
Spektrale Bandbreite bei 50 %
Spectral bandwidth at 50 % I
I
= 10 mA
F
Abstrahlwinkel bei 50 %
Viewing angle at 50 % I
I
v
I
rel max
rel max
(Vollwinkel)
v
(typ.)
(typ.)
Durchlaßspannung (typ.)
Forward voltage (max.)
I
= 10 mA
F
Sperrstrom (typ.)
Reverse current (max.)
V
= 5 V
R
Kapazität (typ.)
Capacitance
V
= 0 V, f = 1 MHz
R
Schaltzeiten:
Switching times:
I
from 10 % to 90 % (typ.)
V
I
from 90 % to 10 % (typ.)
V
I
= 100 mA, tp = 10 µs, RL= 50 Ω
F
Symbol
Symbol
Werte
Values
Einheit
Unit
LS LO LY LG LP
λ
λ
peak
dom
635 610 586 565 557 nm
628 605 590 570 560 nm
∆λ 45 40 45 25 22 nm
2ϕ 120 120 120 120 120 Grad
deg.
V
V
I
I
C
t
t
F
F
R
R
0
r
f
2.0
2.6
2.0
2.6
2.0
2.6
2.0
2.6
2.0
2.6VV
0.01100.01100.01100.01100.0110µA
µA
128 101515pF
300
150
300
150
300
150
450
200
450
200nsns
Semiconductor Group 4
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LS M770, LO M770, LY M770
LG M770, LP M770
Relative spektrale Emission I
= f (λ), TA= 25 ˚C, IF= 10 mA
rel
Relative spectral emission
V(λ) = spektrale Augenempfindlichkeit
Standard eye response curve
Abstrahlcharakteristik I
Radiation characteristic
= f (ϕ)
rel
Semiconductor Group 5
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LS M770, LO M770, LY M770
LG M770, LP M770
Durchlaßstrom IF = f (VF)
Forward current
T
= 25 ˚C
A
Relative Lichtstärke IV/I
V(10 mA)
Relative luminous intensity
T
= 25 ˚C
A
= f (IF)
Zulässige Impulsbelastbarkeit
I
= f (tp)
F
Permissible pulse handling capability
Duty cycle D = parameter, TA = 25 ˚C
Maximal zulässiger Durchlaßstrom
Max. permissible forward current
I
= f (TA)
F
Semiconductor Group 6
Page 7
LS M770, LO M770, LY M770
LG M770, LP M770
Wellenlänge der Strahlung λ
Wavelength at peak emission
I
= 10 mA
F
peak
= f (TA)
Dominantwellenlänge λ
Dominant wavelength
I
= 10 mA
F
dom
= f (TA)
Durchlaßspannung
Forward voltage
I
= 10 mA
F
V
= f (TA)
F
Relative Lichtstärke
I
/ I
V
V(25 ˚C )
Relative luminous intensity
I
= 10 mA
F
= f (TA)
Semiconductor Group 7
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LS M770, LO M770, LY M770
Maßzeichnung (Maße in mm, wenn nicht anders angegeben)
Package Outlines (Dimensions in mm, unless otherwise specified)
LG M770, LP M770
Kathodenkennung: abgeschrägte Ecke
Cathode mark: bevelled edge
GPL06926
Semiconductor Group 8
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