Datasheet LYM670-K, LYM670-JM, LYM670-J, LSM670-K, LSM670-JM Datasheet (Siemens)

Mini TOPLED

®

Besondere Merkmale

● Gehäusefarbe: weiß

● als optischer Indikator einsetzbar

● zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung

● für alle SMT-Bestück- und Löttechniken geeignet

● gegurtet (8-mm-Filmgurt)

● Störimpulsfest nach DIN 40839

LS M670, LO M670, LY M670

LG M670, LP M670

Features

● color of package: white

● for use as optical indicator

● for backlighting, optical coupling into light pipes and lenses

● suitable for all SMT assembly and soldering methods

● available taped on reel (8 mm tape)

● load dump resistant acc. to DIN 40839

VPL06927

Semiconductor Group 1 1998-11-12

LS M670, LO M670, LY M670

LG M670, LP M670

Typ

Type

LS M670-HK LS M670-J LS M670-K LS M670-JM

LO M670-HK LO M670-J LO M670-K LO M670-JM

LY M670-HK LY M670-J LY M670-K LY M670-JM

LG M670-HK LG M670-J LG M670-K LG M670-JM

Emissionsfarbe

Farbe der Lichtaustritts-

Lichtstärke

fläche Color of Emission

Color of the

Light Emitting

Area

Luminous Intensity

I

= 10 mA

F

I

(mcd)

V

super-red colorless clear 2.5 … 12.5

4.0 … 8.0

6.3 … 12.5

4.0 … 32.0

orange colorless clear 2.5 … 12.5

4.0 … 8.0

6.3 … 12.5

4.0 … 32.0

yellow colorless clear 2.5 … 12.5

4.0 … 8.0

6.3 … 12.5

4.0 … 32.0

green colorless clear 2.5 … 12.5

4.0 … 8.0

6.3 … 12.5

4.0 … 32.0

Lichtstrom

Luminous Flux

I

= 10 mA

F

ΦV (mlm)

18 (typ.) 30 (typ.)

-

18 (typ.) 30 (typ.)

-

18 (typ.) 30 (typ.)

-

18 (typ.) 30 (typ.)

-

Bestellnummer

Ordering Code

Q62703-Q3380 Q62703-Q3381 Q62703-Q3382 Q62703-Q3383

Q62703-Q3384 Q62703-Q3385 Q62703-Q3386 Q62703-Q3387

Q62703-Q3388 Q62703-Q3389 Q62703-Q3390 Q62703-Q3391

Q62703-Q3392 Q62703-Q3393 Q62703-Q3394 Q62703-Q3395

LP M670-FJ LP M670-G LP M670-H LP M670-GK

pure green colorless clear 1.0 … 8.0

1.6 … 3.2

2.5 … 5.0

1.6 … 12.5

Streuung der Lichtstärke in einer Verpackungseinheit I Luminous intensity ratio in one packaging unit I

V max

/ I

V max

V min

/ I

V min

≤ 2.0.

8 (typ.) 12 (typ.)

-

≤ 2.0.

Q62703-Q3396 Q62703-Q3397 Q62703-Q3398 Q62703-Q3399

Semiconductor Group 2 1998-11-12

Grenzwerte Maximum Ratings

LS M670, LO M670, LY M670

LG M670, LP M670

Bezeichnung Parameter

Betriebstemperatur Operating temperature range

Lagertemperatur Storage temperature range

Sperrschichttemperatur Junction temperature

Durchlaßstrom Forward current

Stoßstrom Surge current

t ≤ 10 µs, D = 0.005

Sperrspanung Reverse voltage

Verlustleistung Power dissipation

Wärmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-board*) (Padgröße ≥ 16 mm2) mounted on PC board*) (pad size ≥ 16 mm2)

Symbol Symbol

T

op

T

stg

T

j

I

F

I

FM

V

R

P

tot

R

th JA

Werte Values

Einheit Unit

– 55 ... + 100 ˚C

+ 100 ˚C

30 mA

0.5 A

5V

80 mW

1)

480

K/W

*)PC-board: FR4

1)

vorläufig/preliminary

Semiconductor Group 3 1998-11-12

Kennwerte (TA = 25 ˚C) Characteristics

LS M670, LO M670, LY M670

LG M670, LP M670

Bezeichnung Parameter

Wellenlänge des emittierten Lichtes (typ.) Wavelength at peak emission (typ.)

I

= 10 mA

F

Dominantwellenlänge (typ.) Dominant wavelength (typ.)

I

= 10 mA

F

Spektrale Bandbreite bei 50 % I Spectral bandwidth at 50 % I

I

= 10 mA

F

rel max

(typ.) (typ.)

Abstrahlwinkel bei 50 % Iv (Vollwinkel) Viewing angle at 50 % I

v

Durchlaßspannung (typ.) Forward voltage (max.)

I

= 10 mA

F

Sperrstrom (typ.) Reverse current (max.)

V

= 5 V

R

Kapazität (typ.) Capacitance

V

= 0 V, f = 1 MHz

R

Schaltzeiten: Switching times:

I

from 10 % to 90 % (typ.)

V

I

from 90 % to 10 % (typ.)

V

I

= 100 mA, tp = 10 µs, RL= 50 Ω

F

Symbol Symbol

Werte

Values

Einheit Unit

LS LO LY LG LP

λ

peak

dom

635 610 586 565 557 nm

628 605 590 570 560 nm

∆λ 45 40 45 25 22 nm

2ϕ 120 120 120 120 120 Grad

deg.

V V

I I

C

t t

F F

R R

0

r f

2.0

2.6

2.0

2.6

2.0

2.6

2.0

2.6

2.0

2.6VV

0.01100.01100.01100.01100.0110µA µA

128 101515pF

300 150

450 200

450 200nsns

Semiconductor Group 4 1998-11-12

LS M670, LO M670, LY M670

LG M670, LP M670

Relative spektrale Emission I

= f (λ), TA= 25 ˚C, IF= 10 mA

rel

Relative spectral emission

V(λ) = spektrale Augenempfindlichkeit

Standard eye response curve

100

%

Ι

rel

80

60

40

blue

20

OHL01698

V

λ

red

orange

green

yellow

pure-green

super-red

hyper-red

0

400 450 500 550 600 650 700

Abstrahlcharakteristik I Radiation characteristic

50˚

60˚

70˚

80˚

= f (ϕ)

rel

nm

λ

0˚10˚20˚40˚ 30˚

ϕ

1.0

OHL01660

0.8

0.6

0.4

0.2

90˚

0

100˚

1.0 0.8 0.6 0.4

0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚

Semiconductor Group 5 1998-11-12

LS M670, LO M670, LY M670

LG M670, LP M670

Durchlaßstrom IF = f (VF) Forward current

T

= 25 ˚C

A

2

10

Ι

F

mA

1

10

5

0

10

5

-1

10

1.0 1.4 1.8 2.2 2.6 3.0 3.4

pure-green

super-red orange/yellow green

OHL02145

V

F

Relative Lichtstärke IV/I

V(10 mA)

Relative luminous intensity

T

= 25 ˚C

A

1

10

Ι

V

Ι

V

(10 mA)

0

10

5

-1

10

5

10

-2

5

-3

10

-1 0

green red yellow super-red orange pure-green

10 10

55

= f (IF)

OHL02146

12

mA

10

Ι

F

Zulässige ImpulsbelastbarkeitIF = f (tp) Permissible pulse handling capability

Duty cycle D = parameter, TA = 25 ˚C

3

10

Ι

F

=

D

mA

t

D

P

T

=

0.005

t

P

T

0.01

0.02

0.05

0.1

2

0.2

10

5

0.5

DC

1

10

OHL01686

s10-510-410-310-210-110010

t

p

Maximal zulässiger Durchlaßstrom Max. permissible forward current

I

= f (TA)

F

35

mA

Ι

F

Ι

F

30

25

20

15

10

5

0

1

0 20 40 60 80 C 100

OHL00231

T

A

Semiconductor Group 6 1998-11-12

LS M670, LO M670, LY M670

LG M670, LP M670

Wellenlänge der Strahlung λ Wavelength at peak emission

I

= 10 mA

F

690

λ

peak

nm

650

super-red

630

610

590

570

550

0 20 40 60 80 100

orange

yellow

green pure-green

peak

= f (TA)

OHL02104

˚C

Dominantwellenlänge λ Dominant wavelength

I

= 10 mA

F

690

λ

dom

nm

650

630

610

590

570

550

0 20 40 60 80 100

super-red

orange

yellow

green

pure-green

dom

= f (TA)

OHL02105

˚C

Durchlaßspannung VF = f (TA) Forward voltage

I

= 10 mA

F

2.4

V

F

V

2.2

2.0

super-red

1.8

1.6

orange yellow

T

OHL02106

green

pure-green

Relative Lichtstärke IV/ I

V(25 ˚C )

Relative luminous intensity

I

= 10 mA

F

2.0

Ι

V

Ι

(25 ˚C)

V

1.6

1.2

0.8

0.4

orange super-red

pure-green

T

= f (TA)

OHL02150

yellow green

1.4 0 20 40 60 80 100

˚C

T

A

0.0 0 20 40 60 80 100

T

˚C

A

Semiconductor Group 7 1998-11-12

LS M670, LO M670, LY M670

Maßzeichnung (Maße in mm, wenn nicht anders angegeben) Package Outlines (Dimensions in mm, unless otherwise specified)

1.4

1.2

0.5

0.3

Cathode marking

2.1

2.3

Cathode marking

1.9

1.0

0.8

1.5

1.3

0.15

0.05

LG M670, LP M670

typ. 1.5 x 1.0

Kathodenkennung: abgeschrägte Ecke Cathode mark: bevelled edge

GPL06928

Semiconductor Group 8 1998-11-12