Datasheet LFE15600X Datasheet (Philips)

Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
LFE15600X
NPN microwave power transistor
Product specification Supersedes data of January 1994
1997 Feb 19
Page 2
NPN microwave power transistor LFE15600X

FEATURES

Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
Interdigitated structure provides high emitter efficiency
Gold metallization realizes very good stability of the characteristics and excellent lifetime
Multicell geometry gives good balance of dissipated power and low thermal resistance
Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.

APPLICATIONS

Common emitter, class AB amplifiers in CW conditions for professional applications between 1.5 GHz and
1.7 GHz.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT448A glued cap metal ceramic flange package, with emitter connected to flange.

QUICK REFERENCE DATA

Microwave performance up to T
=25°C in a common emitter class AB
mb
amplifier.
MODE OF
OPERATIONf(GHz)
V
(V)
CE
I (A)
CQ
P
L1
(W)
G
po
(dB)
η
(%)
C
Zi/Z
()
Class AB (CW) 1.5 24 0.2 55 8 typ.50 see Figs 7
and 8

PINNING - SOT448A

PIN DESCRIPTION
1 collector 2 base 3 emitter connected to flange
ook, 4 columns
Top view
1
c
b
33
2
MAM045
e
Fig.1 Simplified outline and symbol.
L
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19 2
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NPN microwave power transistor LFE15600X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
i
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.2 mm from ceramic.
collector-base voltage open emitter 45 V collector-emitter voltage RBE=56Ω−30 V collector-emitter voltage open base 22 V emitter-base voltage open collector 3V DC collector current 12 A input power f = 1.5 GHz; VCE= 24 V; class AB 20 W total power dissipation Tmb=75°C 80 W storage temperature 65 +200 °C junction temperature 200 °C soldering temperature t 10 s; note 1 235 °C
P
(W)
120
tot
80
40
0
0
Fig.2 Power derating curve.
MBD390
100 200
o
T ( C)
mb
1997 Feb 19 3
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NPN microwave power transistor LFE15600X

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-mb
R
th mb-h
Note
1. See

CHARACTERISTICS

=25°C unless otherwise specified.
T
mb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
V
(BR)CER
V
(BR)CBO
V
(BR)EBO
h
FE
thermal resistance from junction to mounting base Tj= 100 °C 1.2 K/W thermal resistance from mounting base to heatsink note 1 0.2 K/W
“Mounting recommendations in the General part of handbook SC19a”
.
collector cut-off current IE= 0; VCB=20V 6mA collector-emitter breakdown voltage IC= 30 mA; RBE=56 30 V collector-base breakdown voltage IC=30mA 45 V emitter-base breakdown voltage IE=30mA 3 V DC current gain IC= 1 A; VCE= 5 V 15 100

APPLICATION INFORMATION

Microwave performance up to T
MODE OF OPERATION
=25°C in a common emitter class AB amplifier.
mb
f
(GHz)
V
(V)
CE
I
CQ
(A)
Class AB (CW) 1.5 24 0.2 55
P
L1
(W)
typ. 60
G
po
(dB)
8
typ. 8.5
η
(%)
C
Zi/Z
()
L
typ. 50 see Figs 7
and 8
1997 Feb 19 4
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NPN microwave power transistor LFE15600X
40 mm
1.0
30 mm
0.635
C5
30 mm
2.0
7.017.5
V
BB
4.0 6.5 3.0 9.0
4.0
10.0
C6
4.0
V
CC
1.0
40 mm
0.635
MBD396
F1
L1
C1
C2 C3
The test circuit is split into 2 independent halves, each being 30 ×40 mm in size. Dimensions in mm. Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: εr= 10.
Fig.3 Prematching test circuit board.
1997 Feb 19 5
C7
L2
C4
rivet
MBD397
outputinput
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NPN microwave power transistor LFE15600X
BIAS CIRCUIT
R1
R2
P1
TR1
D1
D2
R3
C8
PREMATCHING TEST
CIRCUIT
V
C6
C5
F1
L1
C7
L2
DUT
MBD393
CE
Fig.4 Class AB bias circuit.

List of components (see Figs 3 and 4)

COMPONENT DESCRIPTION VALUE TYPE NUMBERS
TR1 transistor BDT91 or equivalent C1, C4 DC blocking chip capacitor 100 pF ATC 100A101kp C2, C3 trimmer capacitor 0.5 to 5.0 pF Tekelec 727-1 C5, C6 feedthrough bypass capacitor 1500 pF Erie, ref. 1250-003 C7, C8 tantalum capacitor 10 µF, 50 V D1 diode BY239 or equivalent; note 1 D2 diode BY239 or equivalent; note 2 L1 4 turns 0.5 mm copper wire; internal diameter = 2 mm L2 3 turns 0.5 mm copper wire; internal diameter = 2 mm P1 linear potentiometer 4.7 k R1 resistor 100 , 0.25 W R2 resistor 10 k, 0.25 W R3 resistor 50 , 0.25 W F1 ferrite bead Philips tube
3.7 × 1.2 × 3.5 mm (3B)
Notes
1. In thermal contact with TR1.
2. In thermal contact with DUT.
1997 Feb 19 6
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NPN microwave power transistor LFE15600X
I =
CQ 400 mA 200 mA 100 mA
12
MBD394
P (W)
i
80
P
L
(W)
60
40
20
0
048 16
VCE= 24 V; f = 1500 MHz.
Fig.5 Load power as a function of input power.
20
d
im
(dB)
25
I =
30
35
40
45
50
0
VCE= 24 V; f1= 1500 MHz; f2= 1500.2 MHz.
CQ 400 mA 200 mA 100 mA
10 20 50
30
MBD395
40
P (W)
o (av)
Fig.6 Intermodulation distortion as a function of
average output power.

Input and optimum load impedances

V
=24V; ICQ= 0.2 A.
CE
f
(GHz)
1.50 2.4 + j3.4 2.4 j1.8
1.55 3.0 + j3.6 2.3 j1.7
1.60 3.5 + j3.8 2.2 j1.6
1.65 4.2 + j3.8 2.1 j1.5
1.70 4.8 + j2.5 1.8 j1.5
Z
()
i
Z
L
()
1997 Feb 19 7
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NPN microwave power transistor LFE15600X
1
VCE= 24 V; Zo=10Ω; ICQ= 0.2 A.
Fig.7 Input impedance as a function of frequency; typical values.
0.5
0.2
+ j
0
– j
0.2
0.5
1.6
1.5
1.7 GHz
Z
i
10.2 10520.5
1
2
5
10
10
5
2
MBD392
VCE= 24 V; Zo=10Ω; ICQ= 0.2 A.
Fig.8 Optimum load impedance as a function of frequency; typical values.
1
0.5
0.2
+ j
0
– j
1.7 GHz
0.2
0.5
1.6
1.5
Z
L
10.2 10520.5
1
2
5
10
10
5
2
MBD391
1997 Feb 19 8
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NPN microwave power transistor LFE15600X

DEFINITIONS

Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Feb 19 9
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NPN microwave power transistor LFE15600X
NOTES
1997 Feb 19 10
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NPN microwave power transistor LFE15600X
NOTES
1997 Feb 19 11
Page 12
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Printed in The Netherlands 127147/00/02/pp12 Date of release: 1997Feb 19 Document order number: 9397 750 01596
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