Datasheet LFE15600X Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

LFE15600X

NPN microwave power transistor

Product specification
Supersedes data of January 1994

1997 Feb 19

Philips Semiconductors Product specification

NPN microwave power transistor LFE15600X

FEATURES

• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR

• Interdigitated structure provides
high emitter efficiency

• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime

• Multicell geometry gives good
balance of dissipated power and
low thermal resistance

• Internal input and output
prematching ensures good stability
and allows an easier design of
wideband circuits.

APPLICATIONS

Common emitter, class AB amplifiers
in CW conditions for professional
applications between 1.5 GHz and

1.7 GHz.

DESCRIPTION

NPN silicon planar epitaxial
microwave power transistor in a
SOT448A glued cap metal ceramic
flange package, with emitter
connected to flange.

QUICK REFERENCE DATA

Microwave performance up to T

=25°C in a common emitter class AB

mb

amplifier.

MODE OF

OPERATIONf(GHz)

V

(V)

CE

I
(A)

CQ

P

L1

(W)

G

po

(dB)

η

(%)

C

Zi/Z

(Ω)

Class AB (CW) 1.5 24 0.2 ≥55 ≥8 typ.50 see Figs 7

and 8

PINNING - SOT448A

PIN DESCRIPTION

1 collector
2 base
3 emitter connected to flange

ook, 4 columns

Top view

1

c

b

33

2

MAM045

e

Fig.1 Simplified outline and symbol.

L

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Feb 19 2

Philips Semiconductors Product specification

NPN microwave power transistor LFE15600X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CER

V

CEO

V

EBO

I

C

P

i

P

tot

T

stg

T

j

T

sld

Note

1. Up to 0.2 mm from ceramic.

collector-base voltage open emitter − 45 V
collector-emitter voltage RBE=56Ω−30 V
collector-emitter voltage open base − 22 V
emitter-base voltage open collector − 3V
DC collector current − 12 A
input power f = 1.5 GHz; VCE= 24 V; class AB − 20 W
total power dissipation Tmb=75°C − 80 W
storage temperature −65 +200 °C
junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C

P

(W)

120

tot

80

40

0

0

Fig.2 Power derating curve.

MBD390

100 200

o

T ( C)

mb

1997 Feb 19 3

Philips Semiconductors Product specification

NPN microwave power transistor LFE15600X

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb

R

th mb-h

Note

1. See

CHARACTERISTICS

=25°C unless otherwise specified.

T

mb

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

CBO

V

(BR)CER

V

(BR)CBO

V

(BR)EBO

h

FE

thermal resistance from junction to mounting base Tj= 100 °C 1.2 K/W
thermal resistance from mounting base to heatsink note 1 0.2 K/W

“Mounting recommendations in the General part of handbook SC19a”

.

collector cut-off current IE= 0; VCB=20V − 6mA
collector-emitter breakdown voltage IC= 30 mA; RBE=56Ω 30 − V
collector-base breakdown voltage IC=30mA 45 − V
emitter-base breakdown voltage IE=30mA 3 − V
DC current gain IC= 1 A; VCE= 5 V 15 100

APPLICATION INFORMATION

Microwave performance up to T

MODE OF OPERATION

=25°C in a common emitter class AB amplifier.

mb

f

(GHz)

V

(V)

CE

I

CQ

(A)

Class AB (CW) 1.5 24 0.2 ≥55

P

L1

(W)

typ. 60

G

po

(dB)

≥8

typ. 8.5

η

(%)

C

Zi/Z

(Ω)

L

typ. 50 see Figs 7

and 8

1997 Feb 19 4

Philips Semiconductors Product specification

NPN microwave power transistor LFE15600X

40 mm

1.0

30 mm

0.635

C5

30 mm

2.0

7.017.5

V

BB

4.0 6.5 3.0 9.0

4.0

10.0

C6

4.0

V

CC

1.0

40 mm

0.635

MBD396

F1

L1

C1

C2 C3

The test circuit is split into 2 independent halves, each being 30 ×40 mm in size.
Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity: εr= 10.

Fig.3 Prematching test circuit board.

1997 Feb 19 5

C7

L2

C4

rivet

MBD397

outputinput

Philips Semiconductors Product specification

NPN microwave power transistor LFE15600X

BIAS CIRCUIT

R1

R2

P1

TR1

D1

D2

R3

C8

PREMATCHING TEST

CIRCUIT

V

C6

C5

F1

L1

C7

L2

DUT

MBD393

CE

Fig.4 Class AB bias circuit.

List of components (see Figs 3 and 4)

COMPONENT DESCRIPTION VALUE TYPE NUMBERS

TR1 transistor BDT91 or equivalent
C1, C4 DC blocking chip capacitor 100 pF ATC 100A101kp
C2, C3 trimmer capacitor 0.5 to 5.0 pF Tekelec 727-1
C5, C6 feedthrough bypass capacitor 1500 pF Erie, ref. 1250-003
C7, C8 tantalum capacitor 10 µF, 50 V
D1 diode BY239 or equivalent; note 1
D2 diode BY239 or equivalent; note 2
L1 4 turns 0.5 mm copper wire; internal diameter = 2 mm
L2 3 turns 0.5 mm copper wire; internal diameter = 2 mm
P1 linear potentiometer 4.7 kΩ
R1 resistor 100 Ω, 0.25 W
R2 resistor 10 kΩ, 0.25 W
R3 resistor 50 Ω, 0.25 W
F1 ferrite bead Philips tube

3.7 × 1.2 × 3.5 mm (3B)

Notes

1. In thermal contact with TR1.

2. In thermal contact with DUT.

1997 Feb 19 6

Philips Semiconductors Product specification

NPN microwave power transistor LFE15600X

I =

CQ
400 mA
200 mA
100 mA

12

MBD394

P (W)

i

80

P

L

(W)

60

40

20

0

048 16

VCE= 24 V; f = 1500 MHz.

Fig.5 Load power as a function of input power.

20

d

im

(dB)

25

I =

30

35

40

45

50

0

VCE= 24 V; f1= 1500 MHz; f2= 1500.2 MHz.

CQ
400 mA
200 mA
100 mA

10 20 50

30

MBD395

40

P (W)

o (av)

Fig.6 Intermodulation distortion as a function of

average output power.

Input and optimum load impedances

V

=24V; ICQ= 0.2 A.

CE

f

(GHz)

1.50 2.4 + j3.4 2.4 − j1.8

1.55 3.0 + j3.6 2.3 − j1.7

1.60 3.5 + j3.8 2.2 − j1.6

1.65 4.2 + j3.8 2.1 − j1.5

1.70 4.8 + j2.5 1.8 − j1.5

Z

(Ω)

i

Z

L

(Ω)

1997 Feb 19 7

Philips Semiconductors Product specification

NPN microwave power transistor LFE15600X

1

VCE= 24 V; Zo=10Ω; ICQ= 0.2 A.

Fig.7 Input impedance as a function of frequency; typical values.

0.5

0.2

+ j

0

– j

0.2

0.5

1.6

1.5

1.7 GHz

Z

i

10.2 10520.5

1

2

5

10

∞

10

5

2

MBD392

VCE= 24 V; Zo=10Ω; ICQ= 0.2 A.

Fig.8 Optimum load impedance as a function of frequency; typical values.

1

0.5

0.2

+ j

0

– j

1.7 GHz

0.2

0.5

1.6

1.5

Z

L

10.2 10520.5

1

2

5

10

∞

10

5

2

MBD391

1997 Feb 19 8

Philips Semiconductors Product specification

NPN microwave power transistor LFE15600X

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Feb 19 9

Philips Semiconductors Product specification

NPN microwave power transistor LFE15600X

NOTES

1997 Feb 19 10

Philips Semiconductors Product specification

NPN microwave power transistor LFE15600X

NOTES

1997 Feb 19 11

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Printed in The Netherlands 127147/00/02/pp12 Date of release: 1997Feb 19 Document order number: 9397 750 01596