Datasheet LET9130 Datasheet (SGS Thomson Microelectronics)

Page 1
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs
OUT =
25 W
EFF. = 29 %
EDGE: 920-960 MHz / 28 V P
OUT =
45 W
EFF. = 38 %
GSM: 920-960 MHz / 28 V P
OUT =
135 W
EFF. = 51 %
EXCELLENT THERMAL STABILITY
BeO FREE PACKAGE
INTERNAL INPUT MATCHING
ESD PROTECTION
LET9130
RF POWER TRANSISTORS
Ldmos Enhanced Technology
PRELIMINARY DATA
M265
epoxy sealed
ORDER CODE
LET9130
PIN CONNECTION
BRANDING
LET9130
1
DESCRIPTION
The
LET9130 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial a nd industrial applications at frequencies up to 1.0 GHz. The
LET9130 is designed for high gain and
broadband performance operating in common source mode at 28 V. Its internal matching makes
3
2
1. Drain
2. Source
3. Gate
it ideal for base station applications requiring high linearity.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 200 °C
T
STG
Drain-Source Voltage 65 V Gate-Source Voltage -0.5 to +15 V Drain Current 15 A Power Dissipation (@ Tc = 70 °C) 217 W
Storage Temperature -65 to +200 °C
CASE
= 25 °C)
THERMA L D ATA
R
th(j-c)
Junction -Case Thermal Resistance 0.6 °C/W
February, 6 2003
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Page 2
LET9130
ELECTRICAL SPECIFICATION (T
CASE
= 25 °C)
STATIC (Per Section)
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
C
OSS
C
RSS
Symbol Test Conditions Min. Typ. Max. Unit
DYNAMIC (
mismatch
P
OUT(EDGE)
η
D(EDGE)
VGS = 0 V ID = 10 µA VGS = 0 V VDS = 26 V VGS = 0 V VDS = 65 V VGS = 5 V VDS = 0 V VDS = 26 V ID = TBD VGS = 10 V ID = 3 A VDS = 10 V ID = 9 A VGS = 0 V VDD = 28 V f = 1 MHz VGS = 0 V VDS = 26 V f = 1 MHz
f = 920-960 MHz
P
1dB
η
D
G
P
Load
VDD = 28 V IDQ = 1 A VDD = 28 V IDQ = 1 A P VDD = 28 V IDQ = 1 A P
V
DD
)
= 28 V IDQ = 1 A P
ALL PHASE ANGLES 400 KHz < -60 dBc
600 KHz < -70 dBc EVM < 3 %
400 KHz < -60 dBc 600 KHz < -70 dBc EVM < 3 %
OUT OUT
OUT
= 130 W = 130 W = 130 W
65 V
1 µA
10 µA
1 µA
35V
0.19 0.4 V 12 mho 90 pF
4.8 pF
120 135 W
48 51 % 15 16 dB
10:1 VSWR
45 W
38 %
DYNAMIC (
mismatch
P
OUT(CDMA)
Gp
η
D(CDMA)
(1) IS-95 CDMA Pilot, Sync, Paging, Traffic, Codes 8 Thru 13
f = 865-895 MHz
P
1dB
η
D
Load
(1)
(CDMA)
(1)
)
VDD = 28 V IDQ = 1 A VDD = 28 V IDQ = 1 A P
= 28 V IDQ = 1 A P
V
DD
ALL PHASE ANGLES 750 KHz ACPR: -45dBc
1.98 MHz ACPR: -60dBc VDD = 26 V IDQ = 800 mA P 750 KHz ACPR: -45dBc
1.98 MHz ACPR: -60dBc
OUT OUT
= 135 W = 135 W
= 25 W
OUT
120 135 W
50 55 %
25 W
16 17 dB
29 %
ESD PROTECTION CHARACTERISTICS
Test Conditions Class
Human Body Model 2 Machine Model M3
2/6
10:1 VSWR
Page 3
TYPICAL PERFORMANCE Power Gain Vs Output Power
LET9130
Efficiency Vs Outpu t Po we r
18
17
Idq = 800 mA
16
Idq = 600 mA
15
Gp (dB)
14
13
12
0 50 100 150 200
Id q = 1 A
Pout (W)
Input Return Loss Vs Output Power
-10
-15
-20
RL (dB)
-25
Vdd = 28 V f = 940 MHz
60
50
40
30
Nd (%)
20
10
0
0 50 100 150 200
Pout (W)
Powe r Ga i n Vs Outp u t Po w er
18
17
16
15
Gp (dB)
14
Tc = 85 °C
Vdd = 28 V f = 940 MHz Idq = 1 A
Tc = 25 °C
Tc = 50 °C
-30
-35 0 50 100 150 200
Pout (W)
Power Gain Vs Output Power
18
17
16
15
Gp (dB)
14
13
f = 940 MHz Idq = 1 A
12
0 50 100 150 200
Vdd = 24 V
Pout (W)
Vdd = 28 V f = 940 MHz Idq = 1 A
Vdd = 30 V
Vdd = 28 V
Vdd = 26 V
13
12
0 50 100 150 200
Pout (W)
f = 940 MHz Idq = 1 A Vdd= 28V
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Page 4
LET9130
q
)
TYPICAL PERFORMANCE Gain-Efficiency Vs Frequency
(BROADBAND)
Return Loss Vs Frequency
18
17
Gp
16
15
Gp (dB)
14
13
12
910 920 930 940 950 960 970
Nd
Pout = 130 W Vdd = 28 V Idq = 1 A
f (MHz)
EVM-Efficiency Vs Output Power
12
Vdd = 28 V Idq = 600 mA f = 960 MHz
10
8
6
EVM (%
4
2
0
1 10 100
Nd
EVM
Pout (W)
80
70
60
50
Nd (%)
40
30
20
-5
-10
-15
-20
RL (dB)
-25
-30
Pout=130 W
-35 Vdd = 28 V
= 1 A
Id
-40
910 920 930 940 950 960 970
f (MHz)
Spectral Regrowth Vs Output Power
60
50
40
30
Nd (%)
20
10
0
-50
-55
-60
-65
-70
Spectral Regrowth (dBc)
-75
-80
-85
@ 400 KHz
@ 600 KHz
1 10 100
Pout (W)
Vdd =28 V Idq = 600 mA f = 960 MHz
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Page 5
M265 (.370 x .780 WIDE 2/L N/HERM W/FLG) MECHANICAL DATA
LET9130
DIM.
A 12.57 12.83 .495 .505 B 4.32 5.33 .170 .210 C 9.65 9.91 .380 .390 D 19.61 20.02 .772 .788 E 33.91 34.16 1.335 1.345 F 0.08 0.15 .003 .006 G 0.89 1.14 .035 .045 H 1.45 1.70 .057 .067
I 3.18 4.32 .125 .170
J 9.27 9.53 .365 .375
K 27.69 28.19 1.090 1.110
L 3.00 3.51 .118 .138
MIN. TYP. MAX MIN. TYP. MAX
mm Inch
Ref. 1023153
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Page 6
LET9130
Information furnished is believed to be ac curate and reli able. Howev er, STMicroel ectronics assumes no responsibilit y for the cons equences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implic ation or otherwise under any patent or patent rights of STMi croelectr onics. Specifications mentioned in thi s publicati on are s ubject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as cri tical comp onents in life support dev i ces or systems wi t hout express written ap proval of STMi croelect ronics.
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