Datasheet LET9130 Datasheet (SGS Thomson Microelectronics)

N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs

• IS-95 CDMA: 865-895 MHz / 28 V
P

OUT =

25 W

EFF. = 29 %

• EDGE: 920-960 MHz / 28 V
P

OUT =

45 W

EFF. = 38 %

• GSM: 920-960 MHz / 28 V
P

OUT =

135 W

EFF. = 51 %

• EXCELLENT THERMAL STABILITY

• BeO FREE PACKAGE

• INTERNAL INPUT MATCHING

• ESD PROTECTION

LET9130

RF POWER TRANSISTORS

Ldmos Enhanced Technology

PRELIMINARY DATA

M265

epoxy sealed

ORDER CODE

LET9130

PIN CONNECTION

BRANDING

LET9130

1

DESCRIPTION

The

LET9130 is a common source N-Channel

enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial a nd
industrial applications at frequencies up to 1.0
GHz. The

LET9130 is designed for high gain and

broadband performance operating in common
source mode at 28 V. Its internal matching makes

3

2

1. Drain

2. Source

3. Gate

it ideal for base station applications requiring high
linearity.

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Unit

V

(BR)DSS

V

GS

I

D

P

DISS

Tj Max. Operating Junction Temperature 200 °C

T

STG

Drain-Source Voltage 65 V
Gate-Source Voltage -0.5 to +15 V
Drain Current 15 A
Power Dissipation (@ Tc = 70 °C) 217 W

Storage Temperature -65 to +200 °C

CASE

= 25 °C)

THERMA L D ATA

R

th(j-c)

Junction -Case Thermal Resistance 0.6 °C/W

February, 6 2003

1/6

LET9130

ELECTRICAL SPECIFICATION (T

CASE

= 25 °C)

STATIC (Per Section)

Symbol Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

DSS

I

GSS

V

GS(Q)

V

DS(ON)

G

FS

C

OSS

C

RSS

Symbol Test Conditions Min. Typ. Max. Unit

DYNAMIC (

mismatch

P

OUT(EDGE)

η

D(EDGE)

VGS = 0 V ID = 10 µA
VGS = 0 V VDS = 26 V
VGS = 0 V VDS = 65 V
VGS = 5 V VDS = 0 V
VDS = 26 V ID = TBD
VGS = 10 V ID = 3 A
VDS = 10 V ID = 9 A
VGS = 0 V VDD = 28 V f = 1 MHz
VGS = 0 V VDS = 26 V f = 1 MHz

f = 920-960 MHz

P

1dB

η

D

G

P

Load

VDD = 28 V IDQ = 1 A
VDD = 28 V IDQ = 1 A P
VDD = 28 V IDQ = 1 A P

V

DD

)

= 28 V IDQ = 1 A P

ALL PHASE ANGLES
400 KHz < -60 dBc

600 KHz < -70 dBc
EVM < 3 %

400 KHz < -60 dBc
600 KHz < -70 dBc
EVM < 3 %

OUT
OUT

OUT

= 130 W
= 130 W
= 130 W

65 V

1 µA

10 µA

1 µA

35V

0.19 0.4 V
12 mho
90 pF

4.8 pF

120 135 W

48 51 %
15 16 dB

10:1 VSWR

45 W

38 %

DYNAMIC (

mismatch

P

OUT(CDMA)

Gp

η

D(CDMA)

(1) IS-95 CDMA Pilot, Sync, Paging, Traffic, Codes 8 Thru 13

f = 865-895 MHz

P

1dB

η

D

Load

(1)

(CDMA)

(1)

)

VDD = 28 V IDQ = 1 A
VDD = 28 V IDQ = 1 A P

= 28 V IDQ = 1 A P

V

DD

ALL PHASE ANGLES
750 KHz ACPR: -45dBc

1.98 MHz ACPR: -60dBc
VDD = 26 V IDQ = 800 mA P
750 KHz ACPR: -45dBc

1.98 MHz ACPR: -60dBc

OUT
OUT

= 135 W
= 135 W

= 25 W

OUT

120 135 W

50 55 %

25 W

16 17 dB

29 %

ESD PROTECTION CHARACTERISTICS

Test Conditions Class

Human Body Model 2
Machine Model M3

2/6

10:1 VSWR

TYPICAL PERFORMANCE
Power Gain Vs Output Power

LET9130

Efficiency Vs Outpu t Po we r

18

17

Idq = 800 mA

16

Idq = 600 mA

15

Gp (dB)

14

13

12

0 50 100 150 200

Id q = 1 A

Pout (W)

Input Return Loss Vs Output Power

-10

-15

-20

RL (dB)

-25

Vdd = 28 V
f = 940 MHz

60

50

40

30

Nd (%)

20

10

0

0 50 100 150 200

Pout (W)

Powe r Ga i n Vs Outp u t Po w er

18

17

16

15

Gp (dB)

14

Tc = 85 °C

Vdd = 28 V
f = 940 MHz
Idq = 1 A

Tc = 25 °C

Tc = 50 °C

-30

-35
0 50 100 150 200

Pout (W)

Power Gain Vs Output Power

18

17

16

15

Gp (dB)

14

13

f = 940 MHz
Idq = 1 A

12

0 50 100 150 200

Vdd = 24 V

Pout (W)

Vdd = 28 V
f = 940 MHz
Idq = 1 A

Vdd = 30 V

Vdd = 28 V

Vdd = 26 V

13

12

0 50 100 150 200

Pout (W)

f = 940 MHz
Idq = 1 A
Vdd= 28V

3/6

LET9130

q

)

TYPICAL PERFORMANCE
Gain-Efficiency Vs Frequency

(BROADBAND)

Return Loss Vs Frequency

18

17

Gp

16

15

Gp (dB)

14

13

12

910 920 930 940 950 960 970

Nd

Pout = 130 W
Vdd = 28 V
Idq = 1 A

f (MHz)

EVM-Efficiency Vs Output Power

12

Vdd = 28 V
Idq = 600 mA
f = 960 MHz

10

8

6

EVM (%

4

2

0

1 10 100

Nd

EVM

Pout (W)

80

70

60

50

Nd (%)

40

30

20

-5

-10

-15

-20

RL (dB)

-25

-30

Pout=130 W

-35
Vdd = 28 V

= 1 A

Id

-40

910 920 930 940 950 960 970

f (MHz)

Spectral Regrowth Vs Output Power

60

50

40

30

Nd (%)

20

10

0

-50

-55

-60

-65

-70

Spectral Regrowth (dBc)

-75

-80

-85

@ 400 KHz

@ 600 KHz

1 10 100

Pout (W)

Vdd =28 V
Idq = 600 mA
f = 960 MHz

4/6

M265 (.370 x .780 WIDE 2/L N/HERM W/FLG) MECHANICAL DATA

LET9130

DIM.

A 12.57 12.83 .495 .505
B 4.32 5.33 .170 .210
C 9.65 9.91 .380 .390
D 19.61 20.02 .772 .788
E 33.91 34.16 1.335 1.345
F 0.08 0.15 .003 .006
G 0.89 1.14 .035 .045
H 1.45 1.70 .057 .067

I 3.18 4.32 .125 .170

J 9.27 9.53 .365 .375

K 27.69 28.19 1.090 1.110

L 3.00 3.51 .118 .138

MIN. TYP. MAX MIN. TYP. MAX

mm Inch

Ref. 1023153

5/6

LET9130

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by implic ation or otherwise under any patent or patent rights of STMi croelectr onics. Specifications mentioned in thi s publicati on are s ubject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as cri tical comp onents in life support dev i ces or systems wi t hout express written ap proval of STMi croelect ronics.

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