Page 1
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• IS-95 CDMA PERFORMANCES
P
OUT =
20 W
EFF. = 28 %
• EDGE PERFORMANCES
P
OUT =
35 W
EFF. = 35 %
• GSM PERFORMANCES
P
OUT =
75 W
EFF. = 55 %
• EXCELLENT THERMAL STABILITY
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION
LET9085
RF POWER TRANSISTORS
Ldmos Enhanced Technology
TARGET DATA
M265
epoxy sealed
ORDER CODE
LET9085
PIN CONNECTION
BRANDING
LET9085
1
DESCRIPTION
The
LET9085 is a common source N-Channel en-
hancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The
LET9085 is designed for high gain and
broadband performance operating in common
source mode at 26 V. Its internal matching makes
it ideal for base station applications requ iring high
3
2
1. Drain
2. Source
3. Gate
linearity.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 200 °C
T
STG
Drain-Source Voltage 65 V
Gate-Source Voltage -0.5 to +15 V
Drain Current 12 A
Power Dissipation (@ Tc = 70 °C) 186 W
Storage Temperature -65 to +150 °C
CASE
= 25 °C)
THERMA L D ATA
R
th(j-c)
Junction -Case Thermal Resistance 0.7 °C/W
January, 28 2003
1/4
Page 2
LET9085
ELECTRICAL SPECIFICATION (T
CASE
= 25 °C)
STATIC (Per Section)
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
* Includes Internal Input Moscap.
DYNAMIC
Symbol Test Conditions Min. Typ. Max. Unit
mismatch
P
OUT (CDMA)
η
D (CDMA)
(1) IS-95 CDMA Pilot, Sync, Paging, Traffic, Codes 8 Thru 13
VGS = 0 V ID = 10 µA
VGS = 0 V VDS = 26 V
VGS = 0 V VDS = 65 V
VGS = 5 V VDS = 0 V
VDS = 26 V ID = TBD
VGS = 10 V ID = 2 A
VDS = 10 V ID = 6 A
*VGS = 0 V VDS = 28 V f = 1 MHz
VGS = 0 V VDS = 28 V f = 1 MHz
VGS = 0 V VDS = 28 V f = 1 MHz
(
f = 865 - 895 MHz
P
1dB
η
D
G
P
IMD3
Load
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD P
VDD = 26 V IDQ = TBD P
VDD = 26 V IDQ = TBD P
V
DD
)
= 26 V IDQ = TBD P
ALL PHASE ANGLES
750 KHz ACPR: -45dBc
(1)
1.98 MHz ACPR: -60dBc
(1)
750 KHz ACPR: -45dBc
1.98 MHz ACPR: -60dBc
= 90 W
OUT
= 90 W PEP
OUT
= 90 W PEP
OUT
= 90 W
OUT
65 V
1 µA
10 µA
1 µA
TBD V
0.19 0.4 V
8 mho
TBD pF
75 pF
2.9 pF
90 105 W
50 55 %
17 dB
-31 -28 dBc
10:1 VSWR
20 W
28 %
DYNAMIC (
P
1dB
G
P
η
D
Load
mismatch
P
OUT(EDGE)
η
D(EDGE)
f = 920 - 960 MHz
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD P
VDD = 26 V IDQ = TBD P
= 26 V IDQ = TBD P
V
DD
ALL PHASE ANGLES
400 KHz < -60 dBc
600 KHz < -70 dBc EVM < 3 %
400 KHz < -60 dBc
600 KHz < -70 dBc EVM < 3 %
)
70 75 W
OUT
OUT
OUT
= 70 W
= 70 W
= 85 W
15 16 dB
50 55 %
35 W
35 %
ESD PROTECTION CHARACTERISTICS
Test Conditions Class
Human Body Model 2
Machine Model M3
2/4
10:1 VSWR
Page 3
M265 (.370 x .780 WIDE 2/L N/HERM W/FLG) MECHANICAL DATA
LET9085
DIM.
A 12.57 12.83 .495 .505
B 4.32 5.33 .170 .210
C 9.65 9.91 .380 .390
D 19.61 20.02 .772 .788
E 33.91 34.16 1.335 1.345
F 0.08 0.15 .003 .006
G 0.89 1.14 .035 .045
H 1.45 1.70 .057 .067
I 3.18 4.32 .125 .170
J 9.27 9.53 .365 .375
K 27.69 28.19 1.090 1.110
L 3.00 3.51 .118 .138
MIN. TYP. MAX MIN. TYP. MAX
mm Inch
Ref. 1023153
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LET9085
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or patent rights of STMi croelectr onics. Sp ecifications mentioned in thi s publicati on are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as cri tical comp onents in life support dev i ces or systems wi thout exp ress written approval of STM i croelect ronics.
The ST log o i s registered trademark of STMicroelectronics
2003 STMicroelectronic s - All Rights Reserved
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