• AVAILABLE IN TAPE & REEL wit h TR SUFFIX
DESCRIPTION
The LET9060S is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies up
to 1 GHz. LET9060S boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD pla stic
RF power package, PowerSO-10RF. LET9060S’s
superior linearity performance makes it an ideal
solution for base station applications.
= 60 W with 17 dB gain @ 945 MHz / 26V
OUT
LET9060S
RF POWER TRANSISTORS
PRELIMINARY DATA
PowerSO-10RF
(straight lead)
ORDER CODE
LET9060S
PIN CONNECTION
GATE
BRANDING
LET9060S
SOUR CE
DRAIN
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SM D package. I t has b een
specially optmized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com /rf/ (look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS (T
SymbolParameterValueUnit
V
(BR)DSS
V
GS
I
D
P
DISS
TjMax. Operating Junction Temperature165°C
T
STG
Drain-Source Voltage65V
Gate-Source Voltage-0.5 to +15V
Drain Current7A
Power Dissipation170W
Storage Temperature-65 to +150°C
CASE
= 25 °C)
THERMA L D ATA
R
th(j-c)
March, 25 2003
Junction -Case Thermal Resistance0.7°C/W
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Page 2
LET9060S
ELECTRICAL SPECIFICATION (T
CASE
= 25 °C)
STATIC
SymbolTest Conditions Min.Typ.Max.Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
DYNAMIC
SymbolTest ConditionsMin.Typ.Max.Unit
G
P
η
D
IMD3
P
1dB
G
P
η
D
Load
mismatch
VGS = 0 VIDS = 1 mA
VGS = 0 VVDS = 26 V
VGS = 5 VVDS = 0 V
VDS = 26 V
Note (1): Resin protrusions not included (max value: 0.15 mm per side)
CRITICAL DIMENSIONS:
- Overall width (L)
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Page 10
LET9060S
p
Information furnished is believed to be ac curate and reli able. Howev er, STMicroel ectronics assumes no responsibilit y for the cons equences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or patent rights of STMi croelectr onics. Specifications mentioned in thi s publicati on are s ubject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as cri tical comp onents in life support dev i ces or systems wi t hout express written ap proval of STMi croelect ronics.
The ST log o i s registered trademark of STMicroelectronics
2003 STMicroelectronics - All Right s Reserved
All other names are the property of their respective owners.
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://www.st.com
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