Datasheet LET9060S Datasheet (SGS Thomson Microelectronics)

Page 1
Ldmos Enhanced Technology in Plastic Package
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs
COMMON SOURCE CONFIGURATION
P
NEW RF PLASTIC PACKAGE
HIGH GAIN
ESD PROTECTION
AVAILABLE IN TAPE & REEL wit h TR SUFFIX DESCRIPTION
The LET9060S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 1 GHz. LET9060S boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD pla stic RF power package, PowerSO-10RF. LET9060S’s superior linearity performance makes it an ideal solution for base station applications.
= 60 W with 17 dB gain @ 945 MHz / 26V
OUT
LET9060S
RF POWER TRANSISTORS
PRELIMINARY DATA
PowerSO-10RF
(straight lead)
ORDER CODE
LET9060S
PIN CONNECTION
GATE
BRANDING
LET9060S
SOUR CE
DRAIN
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SM D package. I t has b een specially optmized for RF needs and offers excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com /rf/ (look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 165 °C
T
STG
Drain-Source Voltage 65 V Gate-Source Voltage -0.5 to +15 V Drain Current 7 A Power Dissipation 170 W
Storage Temperature -65 to +150 °C
CASE
= 25 °C)
THERMA L D ATA
R
th(j-c)
March, 25 2003
Junction -Case Thermal Resistance 0.7 °C/W
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Page 2
LET9060S
ELECTRICAL SPECIFICATION (T
CASE
= 25 °C)
STATIC
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
DYNAMIC
Symbol Test Conditions Min. Typ. Max. Unit
G
P
η
D
IMD3
P
1dB
G
P
η
D
Load
mismatch
VGS = 0 V IDS = 1 mA VGS = 0 V VDS = 26 V VGS = 5 V VDS = 0 V VDS = 26 V
= 100 mA
ID
VGS = 10 V ID = 3 A VDS = 10 V ID = 3 A VGS = 0 V VDS = 26 V f = 1 MHz VGS = 0 V VDS = 26 V f = 1 MHz VGS = 0 V VDS = 26 V f = 1 MHz
(
f = 945 MHz
VDD = 26 V IDQ = 250 mA P VDD = 26 V IDQ = 250 mA P V
DD
)
= 26 V IDQ = 250 mA P
= 60 W PEP
OUT
= 60 W PEP
OUT
= 60 W PEP
OUT
VDD = 26 V IDQ = 250 mA VDD = 26 V IDQ = 250 mA P VDD = 26 V IDQ = 250 mA P
= 26 V IDQ = 250 mA P
V
DD
OUT OUT OUT
= 60 W = 60 W = 60 W
ALL PHASE ANGLES
65 V
1 µA 1 µA
2.0 5.0 V
0.7 0.8 V
2.5 mho 74 pF 40 pF
2.8 pF Ref. 7143417B
17 dB
47 %
-28 dBc
70 W
16.7 dB 61 %
10:1 VSWR
DYNAMIC (
f = 925 - 960 MHz
)
Symbol Test Conditions Min. Typ. Max. Unit
P
1dB
G
P
η
D
VDD = 26 V IDQ = 250 mA VDD = 26 V IDQ = 250 mA P VDD = 26 V IDQ = 250 mA P
OUT OUT
= 60 W = 60 W
65 W 16 dB 56 %
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Page 3
IMPEDANCE DATA
LET9060S
D
Z
DL
Typical Input Impedan ce
Typical Drain Load Impedance
G
Zin
S
FREQ. MHz
()Z
IN
DL
()
Z
860 0.65 - j 0.05 2.0 + j 0.1 880 0.75 - j 0.6 2.0 + j 0.1 900 0.9 - j 1.4 1.4 + j 0.2 920 0.4 - j 1.3 1.4 + j 0.5 940 0.4 - j 0.8 1.2 + j 0.3 960 0.5 - j 1.6 1.8 + j 1.0
ESD PROTECTION CHARACTERISTICS
Test Conditions Class
Human Body Model 2 Machine Model M3
MOISTURE SENS IT I VITY LEVEL
Test Methodology Rating
J-STD-020B MSL 3
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Page 4
LET9060S
TYPICAL PERFORMANCE
Power Gain Vs Output Power
Power Gain Vs
Output Power
1000
f = 1M Hz
100
C (pF)
Ciss
Coss
10
Crss
1
024681012141618202224262830
Vds (V)
Efficiency Vs Output Power
70
60
50
40
Nd (%)
30
20
10
Vdd = 26 V Idq = 250 mA
0
0 102030405060708090
Pout (W)
20
19
18
17
16
Gp (dB)
15
14
13
12
1 10 100
Idq = 400 mA
Vdd = 26 V
Idq = 600 mA
Idq = 250 mA
Pout (W)
Ouput Power Vs Drain Voltage
90
80
70
60
50
40
Pout (W)
30
20
10
Pin = 2.5 W Idq = 250 mA
0
10 12 14 16 18 20 22 24 26 28 30 32
Vdd (V )
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Page 5
TYPICAL PERFORMANCE
Power Gain Vs Frequency
LET9060S
(BROADBAND)
Efficiency Vs Frequency
20
19
18
17
16
Gp (dB)
15
14
Vdd = 26 V
13
Idq = 250 mA Pout = 60 W
12
910 920 930 940 950 960 970
f (MHz)
Input Return Loss Vs Frequency
0
-4
-8
80
75
70
65
60
Nd (%)
55
50
45
40
910 920 930 940 950 960 970
f (MHz)
Vdd = 26 V Idq = 250 mA Pout = 60 W
RL (dB)
-12
-16
-20 910 920 930 940 950 960 970
f (MHz)
Vdd = 26 V Idq = 250 mA Pout = 60 W
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Page 6
LET9060S
TEST CIRCUIT SCHEMATIC
G
+
G
V
+
+
V
D
D
+
RF IN
RF OUT
TEST CIRCUIT COMPONENT PART LIST
COMPONENT DESCRIPTION
C1, C8, C9, C13 47pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C2, C7 0.8-8.0pF GIGA TRIM VARIABLE CAPACITOR C3, C4, C5, C6 7.5pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C10 1000pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C11, C15 0.1µF / 500V SURFACE MOUNT CERAMIC CHIP CAPACITOR C12 10µF / 50V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR C14 100pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C16 220µF / 63V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR R1 18K, 1W SURFACE MOUNT CHIP RESISTOR R2 4.7M, 1W SURFACE MOUNT CHIP RESISTOR R3 120, 2W SURFACE MOUNT CHIP RESISTOR FB1, FB2 SHIELD BEAD SURFACE MOUNT EMI
L1, L2
INDUCTOR, 5TURNS AIR WOUND #22AWG, ID=0.059[1.49], NYLON COATED MAGNET WIRE
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Page 7
TEST CIRCUIT
LET9060S
TEST CIRCUIT PHOTOMASTER
PD57030S
4 inches
6.4 inches
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Page 8
LET9060S
TAPE & REEL DIMENSIONS
mm
MIN. TYP. MAX
Ao 17.9 18.0 18.1 Bo 9.7 9.8 9.9 Ko 4.15 4.25 4.35 K1 3.6 3.7 3.8
F 11.4 11.5 11.6
P1 23.9 24.0 24.1
W 23.7 24.0 24.3
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Page 9
LET9060S
PowerSO-10RF Straight Lead MECHANICAL DATA
DIM.
A1 1.62 1.67 1.72 0.064 0.065 0.068 A2 3.4 3.5 3.6 0.134 0.137 0.142 A3 1.2 1.3 1.4 0.046 0.05 0.054 A4 0.15 0.2 0.25 0.005 0.007 0.009
a 0.2 0.007 b 5.4 5.53 5.65 0.212 0.217 0.221 c 0.23 0.27 0.32 0.008 0.01 0.012
D 9.4 9.5 9.6 0.370 0.374 0.377
D1 7.4 7.5 7.6 0.290 0.295 0.298
E 15.15 15.4 15.65 0.595 0.606 0.615 E1 9.3 9.4 9.5 0.365 0.37 0.375 E2 7.3 7.4 7.5 0.286 0.292 0.294 E3 5.9 6.1 6.3 0.231 0.24 0.247
F 0.5 0.019
G 1.2 0.047 R1 0.25 0.01 R2 0.8 0.031
T1 6 deg 6 deg T2 10 deg 10 deg
MIN. TYP. MAX MIN. TYP. MAX
mm Inch
Note (1): Resin protrusions not included (max value: 0.15 mm per side)
CRITICAL DIMENSIONS:
- Overall width (L)
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Page 10
LET9060S
p
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