Datasheet LET9045S Datasheet (SGS Thomson Microelectronics)

Page 1
Ldmos Enhanced Technology in Plastic Package
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs
COMMON SOURCE CONFIGURATION
P
NEW RF PLASTIC PACKAGE
HIGH GAIN
ESD PROTECTION
AVAILABLE IN TAPE & REEL wit h TR SUFFIX
= 45 W with 17 dB gain MIN @ 945 MHz /
OUT
28V
LET9045S
RF POWER TRANSISTORS
TARGET DATA
PowerSO-10RF
(straight lead)
ORDER CODE
LET9045S
BRANDING
LET9045S
DESCRIPTION
PIN CONNECTION
The LET9045S is a common sourc e N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band
SOUR CE
commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. LET9045S boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD pla stic RF power package, PowerSO-10RF. LET9045S’s
GATE
DRAIN
superior linearity performance makes it an ideal solution for base station applications.
The PowerSO-10 plastic package, designed to offer hig h reliability, is the first ST JEDE C approved, high power SM D package. I t has b een specially optimized for RF needs and offers excellent RF performances and ease of assembly.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 165 °C
T
STG
Drain-Source Voltage 65 V Gate-Source Voltage -0.5 to +15 V Drain Current 5 A Power Dissipation 160 W
Storage Temperature -65 to +150 °C
CASE
= 25°C)
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
THERMA L D ATA
R
th(j-c)
February, 27 2003
Junction -Case Thermal Resistance 0.85 °C/W
1/9
Page 2
LET9045S
ELECTRICAL SPECIFICATION (T
CASE
= 25°C)
STATIC
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
DYNAMIC
Symbol Test Conditions Min. Typ. Max. Unit
G
P
η
D
IMD3
P
1dB
G
P
η
D
Load
mismatch
VGS = 0 V IDS = 1 mA VGS = 0 V VDS = 28 V VGS = 5 V VDS = 0 V VDS = 28 V
= 250 mA
ID
VGS = 10 V ID = 3 A VDS = 10 V ID = 3 A VGS = 0 V VDS = 28 V f = 1 MHz VGS = 0 V VDS = 28 V f = 1 MHz VGS = 0 V VDS = 28 V f = 1 MHz
(
f = 945 MHz
VDD = 28 V IDQ = 250 mA P VDD = 28 V IDQ = 250 mA P V
DD
)
= 28 V IDQ = 250 mA P
= 45 W PEP
OUT
= 45 W PEP
OUT
= 45 W PEP
OUT
VDD = 28 V IDQ = 250 mA VDD = 28 V IDQ = 250 mA P VDD = 28 V IDQ = 250 mA P
= 28 V IDQ = 250 mA P
V
DD
OUT OUT OUT
= 45 W = 45 W = 45 W
ALL PHASE ANGLES
65 V
1 µA 1 µA
2.0 5.0 V
0.6 V
2.0 mho 60 pF 33 pF
2.2 pF
17 dB
44 %
-28 dBc
60 W
17.8 dB 59 %
10:1 VSWR
DYNAMIC (
f = 925 - 960 MHz
)
Symbol Test Conditions Min. Typ. Max. Unit
P
1dB
G
P
η
D
VDD = 28 V IDQ = 250 mA VDD = 28 V IDQ = 250 mA P VDD = 28 V IDQ = 250 mA P
OUT OUT
= 45 W = 45 W
55 W
17.2 dB 55 %
ESD PROTECTION CHARACTERISTICS
Test Conditions Class
Human Body Model 2 Machine Model M3
MOISTURE SENS IT I VITY LEVEL
Test Methodology Rating
J-STD-020B MSL 3
2/9
Page 3
TYPICAL PERFORMANCE Power Gain Vs Output Power
LET9045S
Power Gain Vs Output Power
1000
100
C (pF)
10
1
Ciss
Coss
Crss
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Vds (V)
f = 1 M Hz
Efficiency Vs Output Power
70
60
50
40
Nd (%)
30
20
10
0
0 10203040506070
Pout (W)
Vdd = 28 V Idq = 250 mA f = 945 MHz
20
19
18
17
16
Gp (dB)
15
14
13
12
Idq = 600 mA Idq = 400 mA
Idq = 100 mA Idq = 250 mA
Idq = 100 mA
Vdd = 28 V f = 945 MHz
1 10 100
Pout (W)
Ouput Power Vs Drain Voltage
90
80
70
60
50
40
Pout (W)
30
20
10
0
10 12 14 16 18 20 22 24 26 28 30 32
Vdd (V)
Pin = 1.5 W
Pin = 1 W
Idq = 250 mA f = 945 MHz
Drain Current Vs Gate-Source Voltage
1.5
1.0
Idq (A)
0.5
Vdd = 28 V
0.0 012345
Vgs ( V)
3/9
Page 4
LET9045S
TYPICAL PERFORMANCE
Power Gain Vs Frequency
(BROADBAND)
Efficiency Vs Frequency
20
18
16
Gp (dB)
14
Vdd = 28 V Pout = 50 W Idq = 250 mA
12
910 920 930 940 950 960 970
f (MHz)
Input Return Loss Vs Frequency
0
-4
-8
80
75
70
65
60
Nd (%)
55
50
45
40
910 920 930 940 950 960 970
f (MHz)
Vdd = 28 V Idq = 250 mA Pout = 50 W
RL (dB)
-12
-16
-20 910 920 930 940 950 960 970
f (MHz)
Vdd = 28 V Idq = 250 mA Pout = 50 W
4/9
Page 5
TEST CIRCUIT SCHEMATIC
G
+
G
V
+
LET9045S
+
V
D
D
+
RF IN
RF OUT
TEST CIRCUIT COMPONENT PART LIST
COMPONENT DESCRIPTION
C1, C8, C9, C13 47pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C2, C7 0.8-8.0pF GIGA TRIM VARIABLE CAPACITOR C3, C4, C5, C6 7.5pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C10 1000pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C11, C15 0.1µF / 500V SURFACE MOUNT CERAMIC CHIP CAPACITOR C12 10µF / 50V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR C14 100pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C16 220µF / 63V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR R1 18K, 1W SURFACE MOUNT CHIP RESISTOR R2 4.7M, 1W SURFACE MOUNT CHIP RESISTOR R3 120, 2W SURFACE MOUNT CHIP RESISTOR FB1, FB2 SHIELD BEAD SURFACE MOUNT EMI
L1, L2
INDUCTOR, 5TURNS AIR WOUND #22AWG, ID=0.059[1.49], NYLON COATED MAGNET WIRE
5/9
Page 6
LET9045S
TEST CIRCUIT
TEST CIRCUIT PHOTOMASTER
PD57030S
4 inches
6.4 inches
6/9
Page 7
TAPE & REEL DIMENSIONS
mm
MIN. TYP. MAX
Ao 17.9 18.0 18.1 Bo 9.7 9.8 9.9 Ko 4.15 4.25 4.35 K1 3.6 3.7 3.8
F 11.4 11.5 11.6
P1 23.9 24.0 24.1
W 23.7 24.0 24.3
LET9045S
7/9
Page 8
LET9045S
PowerSO-10RF Straight Lead MECHANICAL DATA
DIM.
A1 1.62 1.67 1.72 0.064 0.065 0.068 A2 3.4 3.5 3.6 0.134 0.137 0.142 A3 1.2 1.3 1.4 0.046 0.05 0.054 A4 0.15 0.2 0.25 0.005 0.007 0.009
a 0.2 0.007 b 5.4 5.53 5.65 0.212 0.217 0.221 c 0.23 0.27 0.32 0.008 0.01 0.012
D 9.4 9.5 9.6 0.370 0.374 0.377
D1 7.4 7.5 7.6 0.290 0.295 0.298
E 15.15 15.4 15.65 0.595 0.606 0.615 E1 9.3 9.4 9.5 0.365 0.37 0.375 E2 7.3 7.4 7.5 0.286 0.292 0.294 E3 5.9 6.1 6.3 0.231 0.24 0.247
F 0.5 0.019
G 1.2 0.047 R1 0.25 0.01 R2 0.8 0.031
T1 6 deg 6 deg T2 10 deg 10 deg
MIN. TYP. MAX MIN. TYP. MAX
mm Inch
Note (1): Resin protrusions not included (max value: 0.15 mm per side)
CRITICAL DIMENSIONS:
- Overall width (L)
8/9
Page 9
LET9045S
p
Information furnished is believed to be ac curate and reliable. Howev er, STMicroelec tronics assumes no responsibility for t he co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implic ation or oth erwise under any patent or patent rights of STMicroelectron i cs . Specificat i ons mentioned in thi s publication are s ubject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical comp onents in life support devices or systems wi thout express written approval of STM i croelect ronics.
The ST log o i s registered trademark of STM i croelectronics
2003 STMicroelectronics - All Rights Reserved
All other names are the p roperty of the i r respectiv e owners.
Australi a - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
STMicroelectron ics GROUP OF COMPANIES
htt
://www.st.com
9/9
Loading...