The LET9045S is a common sourc e N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
SOUR CE
commercial and industrial applications. It operates
at 28 V in common source mode at frequencies up
to 1 GHz. LET9045S boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD pla stic
RF power package, PowerSO-10RF. LET9045S’s
GATE
DRAIN
superior linearity performance makes it an ideal
solution for base station applications.
The PowerSO-10 plastic package, designed to
offer hig h reliability, is the first ST JEDE C
approved, high power SM D package. I t has b een
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
ABSOLUTE MAXIMUM RATINGS (T
SymbolParameterValueUnit
V
(BR)DSS
V
GS
I
D
P
DISS
TjMax. Operating Junction Temperature165°C
T
STG
Drain-Source Voltage65V
Gate-Source Voltage-0.5 to +15V
Drain Current5A
Power Dissipation160W
Storage Temperature-65 to +150°C
CASE
= 25°C)
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
THERMA L D ATA
R
th(j-c)
February, 27 2003
Junction -Case Thermal Resistance0.85°C/W
1/9
Page 2
LET9045S
ELECTRICAL SPECIFICATION (T
CASE
= 25°C)
STATIC
SymbolTest Conditions Min.Typ.Max.Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
DYNAMIC
SymbolTest ConditionsMin.Typ.Max.Unit
G
P
η
D
IMD3
P
1dB
G
P
η
D
Load
mismatch
VGS = 0 VIDS = 1 mA
VGS = 0 VVDS = 28 V
VGS = 5 VVDS = 0 V
VDS = 28 V
Note (1): Resin protrusions not included (max value: 0.15 mm per side)
CRITICAL DIMENSIONS:
- Overall width (L)
8/9
Page 9
LET9045S
p
Information furnished is believed to be ac curate and reliable. Howev er, STMicroelec tronics assumes no responsibility for t he co nsequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or oth erwise under any patent or patent rights of STMicroelectron i cs . Specificat i ons mentioned in thi s publication are s ubject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical comp onents in life support devices or systems wi thout express written approval of STM i croelect ronics.
The ST log o i s registered trademark of STM i croelectronics
2003 STMicroelectronics - All Rights Reserved
All other names are the p roperty of the i r respectiv e owners.
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htt
://www.st.com
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