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Ldmos Enhanced Technology in Plastic Package
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION
• SUPPLIED IN TAPE & REEL OF 3K UNITS
= 6 W with 17 dB gain @ 960 MHz / 26V
OUT
LET9006
RF POWER TRANSISTORS
TARGET DATA
PowerFLAT
™(5x5)
ORDER CODE
LET9006
BRANDING
9006
DESCRIPTION
The LET9006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power
PIN CONNECTION
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies up
to 1 GHz. LET9006 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the innovative leadless
SMD plastic package, PowerFLAT™.
It is ideal for digital cellular BTS applications
requiring high linearity.
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 150 °C
T
STG
Drain-Source Voltage 65 V
Gate-Source Voltage -0.5 to +15 V
Drain Current 1 A
Power Dissipation (@ Tc = 70°C) 16 W
Storage Temperature -65 to +150 °C
CASE
= 25 °C)
THERMA L D ATA
R
th(j-c)
April, 15 2003
Junction -Case Thermal Resistance 5 °C/W
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LET9006
ELECTRICAL SPECIFICATION (T
CASE
= 25 °C)
STATIC
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
g
FS
C
ISS
C
OSS
C
RSS
DYNAMIC (
Symbol Test Conditions Min. Typ. Max. Unit
P
OUT
(1)
η
D
Load
mismatch
(1) 1 dB Compression point
VGS = 0 V ID = 1 mA
VGS = 0 V VDS = 26 V
VGS = 5 V VDS = 0 V
VDS = 26 V
ID
= TBD
VGS = 10 V ID = 0.5 A
VDS = 10 V ID = 800 mA
VGS = 0 V VDS = 26 V f = 1 MHz
VGS = 0 V VDS = 26 V f = 1 MHz
VGS = 0 V VDS = 26 V f = 1 MHz
f = 960 MHz
(1)
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD P
= 26 V IDQ = TBD P
V
DD
)
= 6 W
OUT
= 6 W
OUT
ALL PHASE ANGLES
65
1 µA
1 µA
2.0 5.0 V
0.9 V
TBD mho
TBD pF
TBD pF
TBD pF
78 W
55 65 %
10:1 VSWR
DYNAMIC (
f = 920 - 960 MHz
)
Symbol Test Conditions Min. Typ. Max. Unit
(1)
P
out
G
P
(1)
η
D
(1) 1 dB Compression point
VDD = 26 V IDQ = TBD
V
= 26 V IDQ = TBD P
DD
VDD = 26 V IDQ = TBD P
OUT
OUT
= 6 W
= 6 W
67 W
17 dB
55 60 %
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LET9006
PowerFLAT™ MECHANICAL DATA
DIM.
A 0.90 1.00 0.035 0.039
A1 0.02 0.05 0.001 0.002
A3 0.24 0.009
AA 0.15 0.25 0.35 0.006 0.01 0.014
b 0.43 0.51 0.58 0.017 0.020 0.023
c 0.64 0.71 0.79 0.025 0.028 0.031
D 5.00 0.197
d 0.30 0.011
E 5.00 0.197
E2 2.49 2.57 2.64 0.098 0.101 0.104
e 1.27 0.050
f 3.37 0.132
g 0.74 0.03
h 0.21 0.008
MIN. TYP. MAX MIN. TYP. MAX
mm Inch
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LET9006
Information furnished is believed to be ac curate and reliable. Howev er, STMicroelec tronics assumes no responsibility for t he co nsequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or oth erwise under any patent or patent rights of STMicroelectron i cs . Specificat i ons mentioned in thi s publication are s ubject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical comp onents in life support devices or systems wi thout express written approval of STM i croelect ronics.
The ST log o i s registered trademark of STM i croelectronics
2003 STMicroelectronics - All Rights Reserved
All other names are the p roperty of the i r respectiv e owners.
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