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Ldmos Enhanced Technology in Plastic Package
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION
• SUPPLIED IN TAPE & REEL OF 3K UNITS
= 2 W with 17 dB gain @ 960 MHz / 26 V
OUT
LET9002
RF POWER TRANSISTORS
TARGET DATA
PowerFLAT
™(5x5)
DESCRIPTION
ORDER CODE
LET9002
PIN CONNECTION
BRANDING
9002
The LET9002 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1000
MHz. The LET9002 is designed f or high gain and
broadband performance operating in common
source mode at 26 V. LET9002 boasts the
excellent gain, linearity and reliability of ST’s latest
LDMOS technology mounted in the innovative
leadless SMD plastic package, PowerFLAT™.
It is ideal for digital cellular BTS applications
requiring high linearity.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 150 °C
T
STG
Drain-Source Voltage 65 V
Gate-Source Voltage -0.5 to +15 V
Drain Current 0.25 A
Power Dissipation (@ Tc = 70°C) 4 W
Storage Temperature -65 to +150 °C
CASE
= 25 °C)
TOP VIEW
THERMA L D ATA
R
th(j-c)
April, 15 2003
Junction -Case Thermal Resistance 20 °C/W
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LET9002
ELECTRICAL SPECIFICATION (T
CASE
= 25 °C)
STATIC
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
g
FS
C
ISS
C
OSS
C
RSS
DYNAMIC (
VGS = 0 V
VGS = 0 V VDS = 26 V
VGS = 5 V VDS = 0 V
VDS = 26 V
VGS = 10 V ID = 125 mA
VDS = 10 V ID = 200 mA
VGS = 0 V VDS = 26 V f = 1 MHz
VGS = 0 V VDS = 26 V f = 1 MHz
VGS = 0 V VDS = 26 V f = 1 MHz
f = 960 MHz
)
Symbol Test Conditions Min. Typ. Max. Unit
(1)
P
out
(1)
η
D
Load
mismatch
(1) 1 dB Compression point
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD P
= 26 V IDQ = TBD P
V
DD
ALL PHASE ANGLES
IDS
ID
= 1 mA
= TBD
OUT
OUT
= 2 W
= 2 W
65 V
1 µA
1 µA
2.0 5.0 V
0.9 V
-- mho
TBD pF
TBD pF
TBD pF
2.5 3 W
55 65 %
10:1 VSWR
DYNAMIC (
f = 920 - 960 MHz
)
Symbol Test Conditions Min. Typ. Max. Unit
(1)
P
out
(1)
η
D
G
P
(1) 1 dB Compression point
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD P
OUT
= 2 W
22.5 W
55 60 %
17 dB
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LET9002
PowerFLAT™ MECHANICAL DATA
DIM.
A 0.90 1.00 0.035 0.039
A1 0.02 0.05 0.001 0.002
A3 0.24 0.009
AA 0.15 0.25 0.35 0.006 0.01 0.014
b 0.43 0.51 0.58 0.017 0.020 0.023
c 0.64 0.71 0.79 0.025 0.028 0.031
D 5.00 0.197
d 0.30 0.011
E 5.00 0.197
E2 2.49 2.57 2.64 0.098 0.101 0.104
e 1.27 0.050
f 3.37 0.132
g 0.74 0.03
h 0.21 0.008
MIN. TYP. MAX MIN. TYP. MAX
mm Inch
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LET9002
Information furnished is believed to be ac curate and reliable. Howev er, STMicroelec tronics assumes no responsibility for t he co nsequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or oth erwise under any patent or patent rights of STMicroelectron i cs . Specificat i ons mentioned in thi s publication are s ubject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical comp onents in life support devices or systems wi thout express written approval of STM i croelect ronics.
The ST log o i s registered trademark of STM i croelectronics
2003 STMicroelectronics - All Rights Reserved
All other names are the p roperty of the i r respectiv e owners.
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